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公开(公告)号：US20250081858A1
公开(公告)日：2025-03-06
申请号：US18602554
申请日：2024-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dae Yun KIM , Hyeok Shin KWON , In Su JEON
IPC: H10N60/12
Abstract: A superconducting device includes a frequency-tunable device including a first conductive pad and a second conductive pad which are connected to each other by a Josephson junction, a ferromagnet having a magnetic domain wall, and a control circuit configured to apply a current to the ferromagnet to adjust a position of the magnetic domain wall of the ferromagnet, and to control a resonance frequency of the frequency-tunable device.
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公开(公告)号：US20250081654A1
公开(公告)日：2025-03-06
申请号：US18458991
申请日：2023-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： IKJUN CHOI
IPC: H01L27/146 , H01L23/48 , H01L23/522 , H01L23/528
Abstract: A semiconductor package includes a semiconductor chip structure and a transparent substrate. The semiconductor chip structure includes first and second semiconductor chips. The first semiconductor chip includes a semiconductor substrate including first and second surfaces, a wiring layer, and a through electrode. The first semiconductor chip has a step structure on an edge of the semiconductor chip structure and connected to the second surface. The step structure includes first to fourth steps. The first step includes a first bottom surface and a first lateral surface. The second step includes a second bottom surface and a second lateral surface. The third step includes a third bottom surface and a third lateral surface. The through electrode extends from the second bottom surface toward the wiring layer.
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公开(公告)号：US20250081645A1
公开(公告)日：2025-03-06
申请号：US18661946
申请日：2024-05-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jungwook LIM
IPC: H01L27/146 , H01L23/00 , H01L23/522
Abstract: Disclosed is an image sensor comprising a first semiconductor substrate that includes a first pixel region and a second pixel region, a first photoelectric conversion element on the first pixel region, a second photoelectric conversion element on the second pixel region, a first floating diffusion section on the first pixel region, a second floating diffusion section on the second pixel region, a first transfer gate electrode between the first photoelectric conversion element and the first floating diffusion section, a second transfer gate electrode between the second photoelectric conversion element and the second floating diffusion section, a second semiconductor substrate on the first semiconductor substrate, and pixel transistors connected to the first and second photoelectric conversion elements. A width of the second photoelectric conversion element is less than that of the first photoelectric conversion element. At least one of the pixel transistors is on the second semiconductor substrate.
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公开(公告)号：US20250081469A1
公开(公告)日：2025-03-06
申请号：US18812283
申请日：2024-08-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： KIJOON KIM , TAEYOUNG KIM , SUHWAN LIM
Abstract: A vertical semiconductor device includes: a plurality of insulation patterns on a substrate, the plurality of insulation patterns being spaced apart from each other in a vertical direction; a plurality of channel structures being spaced apart from each other in a first direction, each of the plurality of channel structures including interface insulation patterns, and the plurality of channel structures disposed in a first trench extending in the first direction and passing through the insulation patterns in the vertical direction; a ferroelectric structure on an outer surface of each of the plurality channel structures, the ferroelectric structure protruding in a direction toward a gap between some of the insulation patterns in the vertical direction; and a conductive pattern on a sidewall of the ferroelectric structure, the conductive pattern filling the gap in the vertical direction.
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公开(公告)号：US20250081462A1
公开(公告)日：2025-03-06
申请号：US18952236
申请日：2024-11-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hauk Han , Taeyong Kim , Keun Lee , Jeonggil Lee , Taisoo Lim , Hanmei Choi
Abstract: A semiconductor device includes gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of a substrate; interlayer insulating layers alternately stacked with the gate electrodes on the substrate; channel structures extending through the gate electrodes; and a separation region extending through the gate electrodes in the first direction and extending in a second direction perpendicular to the first direction, wherein each of the gate electrodes comprises a first conductive layer and a second conductive layer sequentially stacked, the second conductive layer including a metal nitride, and wherein the first conductive layer and the second conductive layer are each in physical contact with the separation region.
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Patent Agency Ranking
公开(公告)号：US20250081444A1
公开(公告)日：2025-03-06
申请号：US18610790
申请日：2024-03-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bowon YOO , Seokhan PARK , Gyuhwan OH , Jinwoo HAN
IPC: H10B12/00
Abstract: A semiconductor memory device includes a peripheral gate structure, bit lines above the peripheral gate structure, being apart from each other in a first direction, and extending in a second direction different from the first direction, first and second active patterns above the bit lines and apart from each other in the second direction, first and second word lines between the first and active patterns and being adjacent to the first and second active patterns, respectively, a first back gate electrode corresponding to the first word line, the first active pattern being between the first back gate electrode and the first word line, a second back gate electrode corresponding to the second word line, the second active being between the second back gate electrode and the second word line, and a word line shielding structure between the first word line and the second word line.
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公开(公告)号：US20250081083A1
公开(公告)日：2025-03-06
申请号：US18952529
申请日：2024-11-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seongil HAHM , Pilseop KANG
Abstract: An electronic device may include at least one processor configured to: configure an ad hoc network including the electronic device, a target device, and a transmitting device, based on a request to add an Internet of Things (IoT) device being received; acquire first information on a first change pattern of a first signal; receive second information on a second change pattern of a second signal transmitted to the target device by the transmitting device, from the target device through the communication interface; acquire a value indicating a similarity between the first change pattern and the second change pattern based on the first information and the second information; and identify that the target device is in a same space as the electronic device and register the target device as the IoT device, based on the value indicating the similarity being greater than or equal to a threshold value.
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公开(公告)号：US20250081031A1
公开(公告)日：2025-03-06
申请号：US18814408
申请日：2024-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Peshal Nayak , Boon Loong Ng , Rubayet Shafin , Vishnu Vardhan Ratnam , Yue Qi , Elliot Jen
Abstract: A first device associated with a second device in a wireless network, the first device comprising at least one station (STA) affiliated with the first device and a processor coupled to the at least one STA, the processor configured to perform a relay operation for a second STA that relays a frame between the second STA and a third STA, determine a change in an operational status of the first STA that is indicative of an overload condition of the first STA, determine to suspend the relay operation for the second STA based on the operational status, and transmit, to the second STA, a relay suspension message that indicates a suspension of the relay operation for the second STA.
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公开(公告)号：US20250081000A1
公开(公告)日：2025-03-06
申请号：US18726699
申请日：2023-01-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Weiwei WANG , Hong WANG , Lixiang XU
Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. Embodiments of the present invention provide a communication method and apparatus in a wireless communication system, an electronic device and a storage medium. The method can be executed by a first network node. The method includes receiving a first message including address information for data transmission with a second network node, and obtain the address information for the data transmission. wherein the address information for the data transmission includes address information of the first network node, and at least one address information corresponding to at least one network entity of a third network node.
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640.发明申请公开(公告)号：US20250080984A1
公开(公告)日：2025-03-06
申请号：US18720873
申请日：2022-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Rajavelsamy RAJADURAI , Rohini RAJENDRAN , Vinay Kumar SHRIVASTAVA , Varini GUPTA , Nivedya Parambath SASI
Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. Method and system for supporting protection of MBS traffic in wireless network. Embodiments herein disclose a method and a system for supporting protection of Multi-cast Broadcast Service (MBS) traffic in a wireless network. The method includes receiving security information in a MBS announcement by user equipment (UE) (100). The method includes determining if MBS traffic protection is applied or not over the service layer; determining whether security capability of the MBS supports handling of the MBS traffic protected at the service layer, when the MBS traffic protection is applied over the service layer; joining a MBS session by sending a Non-access stratum (NAS) request message to a session management function (SMF) device (200), and requesting for the 5GC individual traffic delivery method by including an indication in the NAS request message, if the security capability of the MBS does not support handling of the MBS traffic protected at the service layer; and receiving the MBS traffic via 5GC individual traffic delivery method.
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