公开(公告)号：US07060557B1

公开(公告)日：2006-06-13

申请号：US10190297

申请日：2002-07-05

Applicant: Bin Zhao ,  Qizhi Liu ,  Maureen R. Brongo

Inventor： Bin Zhao ,  Qizhi Liu ,  Maureen R. Brongo

IPC: H01L21/8242

CPC classification number: H01L28/91

Abstract: A method for fabricating a capacitor on a semiconductor substrate is disclosed. The method may include simultaneously forming at least one via and at least one upper capacitor plate opening in a first dielectric layer having an underlying cap dielectric layer deposited over a first material region having a first conductive material within a conductive region and forming a trench above the via. The underlying cap dielectric layer may be modified in a way that increases its dielectric constant as a result of simultaneously be heated by a heat source and impinged with and energy beam. The method may also include filling the via, trench, and upper capacitor plate opening with a second conductive material resulting in an integrated circuit structure and employing CMP to remove any excess second conductive material from the integrated circuit structure.

Abstract translation: 公开了一种在半导体衬底上制造电容器的方法。 该方法可以包括同时形成至少一个通孔和至少一个上电容器板开口，该第一电介质层具有沉积在具有导电区域内的第一导电材料的第一材料区域上的底层盖电介质层，并且形成在 通过。 底层盖电介质层可以以增加其介电常数的方式进行修改，这是由于同时被热源加热并与其碰撞而产生的能量束。 该方法还可以包括用第二导电材料填充通孔，沟槽和上电容器板开口，得到集成电路结构，并采用CMP从集成电路结构中去除任何多余的第二导电材料。

公开(公告)号：US06693743B2

公开(公告)日：2004-02-17

申请号：US09876602

申请日：2001-06-07

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: G02B530

CPC classification number: G02B5/3083

Abstract: A birefringent device has a polarization separating device configured to separate a first composite light beam into first and second components thereof. The first and second components are orthogonally polarized with respect to one another. A first path is configured to transmit the first component and has a first optical path length. Similarly, a second path is configured to transmit the second component and has a second optical path length. The second optical path length is different from the first optical path length. A polarization combining device is configured to recombine the first and second components so as to form a second composite light beam. The second composite light beam is birefringent with respect to the first composite light beam.

Abstract translation: 双折射装置具有被配置为将第一复合光束分离成其第一和第二分量的偏振分离装置。 第一和第二组分相对于彼此正交极化。 第一路径被配置为传送第一分量并具有第一光程长度。 类似地，第二路径被配置为发送第二分量并且具有第二光路长度。 第二光路长度与第一光路长度不同。 偏振组合装置被配置为重新组合第一和第二分量以便形成第二复合光束。 第二复合光束相对于第一复合光束是双折射的。

公开(公告)号：US06687054B2

公开(公告)日：2004-02-03

申请号：US09876647

申请日：2001-06-07

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: G02B2728

CPC classification number: G02B5/3083

Abstract: A low dispersion comb filter or interleaver assembly has a first interleaver element and a second interleaver element. The first interleaver element is configured so as to provide a dispersion vs. wavelength curve wherein each dispersion value thereof is approximately opposite in value to a dispersion value at the same wavelength for the second interleaver element, so as to mitigate net or total dispersion in the interleaver assembly.

Abstract translation: 低色散梳状滤波器或交织器组件具有第一交织器元件和第二交织器元件。 第一交织器元件被配置为提供色散相对于波长曲线，其中其每个色散值与第二交织器元件的相同波长处的色散值几乎相反，以便减轻第二交织器元件中的净色散或总色散 交织器装配。

公开(公告)号：US06628449B2

公开(公告)日：2003-09-30

申请号：US09891794

申请日：2001-06-25

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: G02F103

CPC classification number: G02B6/29302 ,  G02B6/272 ,  G02B6/2766 ,  G02B6/2773 ,  G02B6/29386

Abstract: A low dispersion comb filter or interleaver comprises a first birefringent element assembly having at least one birefringent element and a second birefringent element assembly having at least one other birefringent element. The first birefringent element assembly and the second birefringent element assembly are configured so as to cooperate with one another in a manner which mitigates dispersion of the interleaver. By aligning the polarization directions of the odd channels and the even channels so as to be parallel with respect to one another prior to entering the second birefringent element assembly, zero or nearly zero dispersion is obtained simultaneously for both the odd and even channels.

公开(公告)号：US06567813B1

公开(公告)日：2003-05-20

申请号：US09752377

申请日：2000-12-29

Applicant: Min Zhu ,  Bin Zhao

Inventor： Min Zhu ,  Bin Zhao

IPC: G06F1730

CPC classification number: G06Q10/10

Abstract: A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer is connected or any other server in the system. As a result, the system and method of the present invention is easily scalable to support an arbitrary number of participants to a conference by merely adding the appropriate number of server computers to the system. In addition, by replicating the conference information on more than one server computer, the single point of failure limitation is eliminated. In fact, if a server hosting or participating in a conference malfunctions, the failure is detected by other server computers and the client computer is able to reconnect to the conference through a new server computer.

Abstract translation: 提供了一种分布式协同计算机系统，其包括通过高速链路互连的多个服务器计算机。 客户端计算机可以连接到任何可用的服务器计算机，并启动或加入在与客户端计算机连接的服务器计算机或系统中的任何其他服务器上托管的会议。 结果，本发明的系统和方法可以容易地扩展，以通过仅仅将适当数量的服务器计算机添加到系统来支持会议的任意数量的参与者。 另外，通过在多台服务器计算机上复制会议信息，消除了单点故障限制。 事实上，如果托管或参与会议的服务器发生故障，则其他服务器计算机检测到故障，客户端计算机能够通过新的服务器计算机重新连接到会议。

公开(公告)号：US06563641B2

公开(公告)日：2003-05-13

申请号：US09892224

申请日：2001-06-25

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: G02B530

CPC classification number: G02B6/29302 ,  G02B6/272 ,  G02B6/2766 ,  G02B6/2773 ,  G02B6/29386 ,  Y10S359/90

Abstract: An interleaver has a birefringent element assembly and a reflector configured so as to direct light from the birefringent element assembly back into and through birefringent element assembly. The birefringent element assembly has at least one birefringent element. Directing light from the birefringent element assembly back through the birefringent element assembly enhances transmission characteristics and/or mitigates dispersion.

Abstract translation: 交织器具有双折射元件组件和反射器，其被配置为将来自双折射元件组件的光引导回并穿过双折射元件组件。 双折射元件组件具有至少一个双折射元件。 将来自双折射元件组件的光引导回通过双折射元件组件增强透射特性和/或减轻分散。

公开(公告)号：US06509623B2

公开(公告)日：2003-01-21

申请号：US09967115

申请日：2001-09-28

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: H01L2972

CPC classification number: H01L21/7682 ,  H01L21/31144 ,  H01L21/764 ,  H01L23/5221 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved microelectronic structure is disclosed. The improved structure includes an air-gap region formed by removing an insulating material through an aperture residing in a mask.

公开(公告)号：US06417094B1

公开(公告)日：2002-07-09

申请号：US09224339

申请日：1998-12-31

Applicant: Bin Zhao ,  Liming Tsau

Inventor： Bin Zhao ,  Liming Tsau

IPC: H01L214763

CPC classification number: H01L21/76831 ,  H01L21/76808 ,  H01L2221/1031

Abstract: An interconnect fabrication process and structure provides barrier enhancement at the via sidewalls and improved capability to fabricate high aspect ratio dual damascene interconnects. A via structure is patterned into the via dielectric first, then a dielectric barrier (for example, anisotropically etched silicon nitride) is formed only along the via sidewalls in the dual damascene structure prior to deposition of a metal barrier (for example, Ta/TaN). In this way, the effective barrier thickness along the bottom of the via is increased, eliminating the structure's susceptibility to metal migration. The absence of dielectric barrier along the interconnect trench sidewalls leads to low interconnect resistance and low interconnect capacitance. The present invention also provides an improved fabrication method for obtaining high aspect ratio dual damascene interconnect structures.

Abstract translation: 互连制造工艺和结构在通孔侧壁提供了屏障增强，并提高了制造高纵横比双镶嵌互连的能力。 通孔结构首先被图案化到通孔电介质中，然后在沉积金属屏障（例如，Ta / TaN）之前仅在双镶嵌结构中沿着通孔侧壁形成介电阻挡层（例如各向异性蚀刻的氮化硅） ）。 通过这种方式，沿着通孔底部的有效阻挡层厚度增加，消除了结构对金属迁移的敏感性。 沿着互连沟槽侧壁不存在电介质阻挡层导致低互连电阻和低互连电容。 本发明还提供了一种用于获得高纵横比的双镶嵌互连结构的改进的制造方法。

公开(公告)号：US06211561B1

公开(公告)日：2001-04-03

申请号：US09193499

申请日：1998-11-16

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: H01L2900

CPC classification number: H01L23/5222 ,  H01L21/7682 ,  H01L23/4821 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure and fabrication method are provided to form air gaps between interconnect lines and between interconnect layers. A conductive material is deposited and patterned to form a first level of interconnect lines. A first dielectric layer is deposited over the first level of interconnect lines. One or more air gaps are formed in the first dielectric layer to reduce inter-layer capacitance, intra-layer capacitance or both inter-layer and intra-layer capacitance. At least one support pillar remains in the first dielectric layer to promote mechanical strength and thermal conductivity. A sealing layer is deposited over the first insulative layer to seal the air gaps. Via holes are patterned and etched through the sealing layer and the first dielectric layer. A conductive material is deposited to fill the via holes and form conductive plugs therein. Thereafter, a conductive material is deposited and patterned to form a second level of interconnect lines.

Abstract translation: 提供互连结构和制造方法以在互连线之间和互连层之间形成气隙。 导电材料被沉积并图案化以形成第一级互连线。 第一介电层沉积在第一级互连线上。 在第一介电层中形成一个或多个空气间隙，以减少层间电容，层间电容或层间电容和层间电容。 至少一个支撑柱保留在第一介电层中以促进机械强度和导热性。 密封层沉积在第一绝缘层上以密封气隙。 图案化通孔并通过密封层和第一介电层蚀刻。 沉积导电材料以填充通孔并在其中形成导电塞。 此后，沉积并图案化导电材料以形成第二级互连线。

公开(公告)号：US06198170B1

公开(公告)日：2001-03-06

申请号：US09465532

申请日：1999-12-16

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: H01L2348

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01063 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00

Abstract: A copper bonding pad is directly supported by a copper via pad structure, the copper via pad structure having substantially the same geometry and dimensions as the copper bonding pad. The combination of the copper bonding pad and the copper via pad structure results in an increase in effective thickness of the copper bonding pad. Due to this effective increase in the bonding pad thickness, the bonding pad is more tolerant to the potential dishing problem caused by the CMP process. Additional metal pad structures and via pad structures are used below the bonding pad. The additional metal pad structures and via pad structures comprise alternating segments of interconnect metal and dielectric fillers, and alternating segments of via metal and dielectric fillers, respectively. The alternating segments of interconnect metal and dielectric fillers and the alternating segments of via metal and dielectric fillers prevent or reduce the potential dishing problem that otherwise exists in damascene and CMP processing. The alternating segments of interconnect metal and dielectric fillers and the alternating segments of via metal and dielectric fillers are arranged such that there are a number of columns of solid metal support under the bonding pad. The columns of solid metal support significantly improve the poor mechanical support otherwise provided by the low dielectric constant materials that are presently used in fabrication of modern copper integrated circuits. The columns of solid metal support also improve thermal conductivity of the bonding pad.

Abstract translation: 铜焊盘由铜通孔焊盘结构直接支撑，铜通孔焊盘结构具有与铜焊盘基本上相同的几何形状和尺寸。 铜焊盘和铜通孔焊盘结构的组合导致铜焊盘的有效厚度的增加。 由于焊盘厚度的这种有效增加，焊盘更能承受由CMP工艺引起的潜在的凹陷问题。 在焊盘下面使用附加的金属焊盘结构和通孔焊盘结构。 附加的金属焊盘结构和通孔焊盘结构分别包括互连金属和介电填料的交替段，以及通孔金属和电介质填料的交替段。 互连金属和电介质填料的交替段和通孔金属和电介质填料的交替段防止或减少在镶嵌和CMP加工中存在的潜在凹陷问题。 互连金属和电介质填料的交替段和通孔金属和电介质填料的交替段布置成使得在接合焊盘下方有许多固体金属支撑柱。 固体金属载体的柱显着地改善了目前用于制造现代铜集成电路的低介电常数材料提供的差的机械支撑。 固体金属载体的柱也提高了焊盘的导热性。