公开(公告)号：US20130288392A1

公开(公告)日：2013-10-31

申请号：US13848641

申请日：2013-03-21

Applicant: Crocus Technology Inc.

Inventor： Jean Pierre Nozieres ,  Jason Reid

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract translation: 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。

公开(公告)号：US20130182499A1

公开(公告)日：2013-07-18

申请号：US13739044

申请日：2013-01-11

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Ricardo Sousa

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161

Abstract: The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction.

Abstract translation: 本公开涉及一种用于写入到具有由具有存储磁化的存储层形成的磁性隧道结的MRAM单元的方法; 具有参考磁化的参考层; 以及包括在感测层和存储层之间的隧道势垒层; 以及电连接到所述磁性隧道结的电流线; 所述方法包括：使所述磁性隧道结中的加热电流通过以加热所述磁性隧道结; 根据励磁电流的极性，传递用于沿写入方向切换存储磁化的励磁电流。 加热电流的大小使得其作为自旋极化电流并且可以调节存储磁化强度; 并且加热电流的极性使得大致朝向所述写入方向调节存储磁化。

公开(公告)号：US20130094283A1

公开(公告)日：2013-04-18

申请号：US13648221

申请日：2012-10-09

Applicant: CROCUS TECHNOLOGY, INC.

Inventor： Neal Berger ,  Jean-Pierre Nozieres ,  Virgile Javerliac

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C8/08 ,  G11C11/1659 ,  G11C11/1693

Abstract: A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.

Abstract translation: 一种存储器件包括多个磁性随机存取存储器（MRAM）单元，一个场线，以及一个现场线控制器，被配置为产生穿过场线的写入序列。 写入序列用于将多位字写入多个MRAM单元。 多位字包括具有第一极性的位的第一子集和具有第二极性的位的第二子集。 所述写入顺序并行地写入与具有所述第一极性的所述第一第一子集对应的所述多个MRAM单元的至少一个子集，然后并行地写入所述多个MRAM单元的对应于具有 第二极性。

公开(公告)号：US11860250B2

公开(公告)日：2024-01-02

申请号：US17312531

申请日：2019-11-26

Applicant: Crocus Technology SA

Inventor： Andrey Timopheev

IPC: G01R33/09 ,  G01B7/30

CPC classification number: G01R33/098 ,  G01B7/30

Abstract: Magnetic angular sensor device destined to sense an external magnetic field, the sensor device including a plurality of magnetic sensor elements, each sensor element including a magnetic tunnel junction containing a ferromagnetic reference layer having a reference magnetization that is pinned in a pinning direction, a ferromagnetic sense layer having a sense magnetization that can be oriented in an external magnetic field, and a tunnel barrier spacer layer, between the reference layer and the sense layer; wherein the sense layer of at least a portion of said plurality of sensor elements comprises an in-plane uniaxial sense magnetic anisotropy having an easy axis that is aligned substantially parallel to the pinning direction, such that an angular deviation in the alignment of the direction of the sense magnetization in the external magnetic field is minimized for a range of external magnetic field.

公开(公告)号：US20230292624A1

公开(公告)日：2023-09-14

申请号：US17999578

申请日：2021-05-27

Applicant: CROCUS Technology SA

Inventor： Andrey Timopheev ,  Nikita Strelkov ,  Jeffrey Childress

IPC: H10N50/10 ,  H10N50/80

CPC classification number: H10N50/10 ,  H10N50/80

Abstract: A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.

公开(公告)号：US11747411B2

公开(公告)日：2023-09-05

申请号：US17312558

申请日：2019-11-29

Applicant: Crocus Technology SA

Inventor： Andrey Timopheev ,  Romain Foissac

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A magnetic sensing circuit includes a circuit portion including: a main half-bridge including series-connected main tunnel magnetoresistive sensor elements TMR1 and TMR2; a first auxiliary half-bridge connected in parallel to the main half-bridge and including series-connected auxiliary tunnel magnetoresistive sensor elements TMR3 and TMR4 with an output voltage emerging from the connection between TMR1 and TMR3 and between TMR2 and TMR4; wherein a reference magnetization of the magnetoresistive sensor element TMR1 and TMR3 are respectively oriented substantially antiparallel with respect to a reference magnetization of the magnetoresistive sensor element TMR2 and TMR4; and wherein said first auxiliary half-bridge has a sensing axis that differs from the sensing axis of the main half bridge by an angle of about 180°/n, where n is the harmonic number to be canceled. The magnetic sensing circuit allows for sensing of external magnetic fields having high magnitude, with reduced angular error.

公开(公告)号：US20230127582A1

公开(公告)日：2023-04-27

申请号：US17905352

申请日：2021-03-02

Applicant: CROCUS Technology SA

Inventor： Clarisse Ducruet ,  Léa Cuchet ,  Jeffrey Childress

IPC: G01R33/09 ,  H10N50/85 ,  H10N50/10 ,  H01F10/32

Abstract: A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.

公开(公告)号：US20220268815A1

公开(公告)日：2022-08-25

申请号：US17597352

申请日：2020-06-26

Applicant: Crocus Technology SA

Inventor： Andrey Timopheev

IPC: G01R15/20 ,  G01R33/00 ,  G01R33/09

Abstract: Magnetic current sensor, including: a sensor bridge circuit including a first and second half-bridges, each including two series-connected and diagonally opposed tunnel magnetoresistive (TMR) sensor elements, the TMR sensor elements including a reference layer oriented a single predetermined direction and a sense layer having a sense magnetization; a field line configured for passing a field current generating a magnetic field adapted for orienting the sense magnetization of the diagonally opposed TMR sensor elements of the first half-bridge and of the diagonally opposed TMR sensor elements of the second half-bridge in an opposite direction; such that a non-null differential voltage output between the TMR sensor elements of the first half-bridge and the TMR sensor elements of the second half-bridge is measurable when the field current is passed in the field line; the differential voltage output being insensitive to the presence of an external uniform magnetic field.

公开(公告)号：US20220196764A1

公开(公告)日：2022-06-23

申请号：US17605069

申请日：2020-04-23

Applicant: Crocus Technology SA

Inventor： Salim Dounia ,  Claire Baraduc ,  Bernard Dieny

IPC: G01R33/09

Abstract: Magnetic element including a first ferromagnetic layer having a first magnetization including a stable magnetization vortex configuration having a vortex core. The first ferromagnetic layer includes an indentation configured such that the vortex core nucleates substantially at the indentation. Upon application of an external magnetic field in a first field direction, the vortex core moves along a first path and the first magnetization rotates around the vortex core in a counterclockwise direction. Upon application of the external magnetic field in a second field direction opposed to the first field direction, the vortex core moves along a second path and the first magnetization rotates around the vortex core in a clockwise direction. Both the first and second field path are substantially identical and move the vortex core away from the indentation.

公开(公告)号：US20210334482A1

公开(公告)日：2021-10-28

申请号：US17299949

申请日：2019-11-29

Applicant: Crocus Technology SA

Inventor： Ali Alaoui ,  Ates Gurcan

IPC: G06K7/08

Abstract: A reader device for reading information stored on a magnetic strip containing a plurality of polarized magnets, each providing a magnetic flux, said reader device including: a magnetoresistive sensor including a plurality of magnetoresistive elements and configured for reading the information stored on the magnetic strip and outputting a read signal; a processing module configured for decoding the read signal and extracting binary data; wherein the read signal includes amplitude information of the magnetic flux; and wherein the processing module is further configured for decoding the read signal using the amplitude information of the read signal is described. Further, an amplitude decoding method for decoding the read signal outputted by the reader device is described.