公开(公告)号：US20130163318A1

公开(公告)日：2013-06-27

申请号：US13720232

申请日：2012-12-19

申请人： CROCUS TECHNOLOGY SA

发明人： Ioan Lucian Prejbeanu ,  Kenneth Mackay

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.

摘要翻译： 本公开涉及一种用于写入包括磁性隧道结的自参考MRAM单元的方法，包括：存储层，包括具有第一存储磁化的第一铁磁层，具有第二存储磁化的第二铁磁层， 分离第一和第二铁磁层的磁耦合层; 具有自由感知磁化的感测层; 以及包括在感测层和存储层之间的隧道势垒层; 所述第一和第二铁磁层布置成使得所述存储器之间的偶极耦合）和所述感测层基本上为零; 该方法包括：通过使磁性隧道结中的自旋极化电流通过来切换第二铁磁性磁化; 其中根据感测磁化的方向，当在感测层中通过时，自旋极化电流被极化。 MRAM单元可以写入低功耗。

公开(公告)号：US20230134728A1

公开(公告)日：2023-05-04

申请号：US17905278

申请日：2021-02-22

申请人： CROCUS Technology SA

发明人： Robert Zucker ,  Scott Fritz

IPC分类号： G01B7/30 ,  G01D5/14

摘要： Magnetic sensor for measuring an external magnetic field angle in a two-dimensional plane, including: a first and second sensing unit outputting, respectively, a first signal sin(θ) and a second signal cos(θ); a first multiplying DAC receiving the first signal and a first digital input sin(f*t) and outputting a first modulated output signal; a second multiplying DAC receiving the second signal and a second digital input cos(f*t) and outputting a second modulated output signal; a first RC filter receiving the first modulated output signal and outputting a first filtered signal sin(θ)*sin(f*t+RCd); a second RC filter receiving the second modulated output signal and outputting a second filtered signal sin(θ)*sin(f*t+RCd); an adder adding the first and second filtered signals and outputting a summed signal cos(f*t+RCd+θ); and an angle extracting unit for measuring the phase delay between the summed signal and a synchronization signal and determining the angle from the phase delay.

公开(公告)号：US20230066027A1

公开(公告)日：2023-03-02

申请号：US17760109

申请日：2021-01-29

申请人： CROCUS Technology SA

发明人： Léa Cuchet ,  Andrey Timopheev ,  Jeffrey Childress

IPC分类号： G01R33/00 ,  G01R33/09

摘要： A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.

公开(公告)号：US10914795B2

公开(公告)日：2021-02-09

申请号：US16280480

申请日：2019-02-20

申请人： Crocus Technology Inc.

发明人： Anuraag Mohan

IPC分类号： G01R33/00 ,  G01R33/09

摘要： A circuit has a magnetic sensor that produces an uncompensated magnetic sensor output signal. A temperature sensor produces an ambient temperature signal. A compensation circuit is connected to the magnetic sensor and the temperature sensor. The compensation circuit is configured to add a computed temperature compensation signal to the uncompensated magnetic sensor output signal to produce a magnetic sensor temperature compensated output signal that reduces thermally induced variation of the uncompensated magnetic sensor output signal.

公开(公告)号：US20200150195A1

公开(公告)日：2020-05-14

申请号：US16683749

申请日：2019-11-14

申请人： Crocus Technology Inc.

发明人： Robert D. ZUCKER

IPC分类号： G01R33/09

摘要： An apparatus includes a magnetic bridge sensor generating an output in response to a sensed magnetic field. An amplification stage processes the output to produce an amplified output signal. A field-effect transistor with a gate receives the amplified output signal, a source node receives a current source and a drain node is connected to the magnetic sensor. A regulator is connected to the magnetic bridge sensor. A first contact is connected to the source node to produce a voltage signal characterizing the sensed magnetic field. A second contact is connected to the magnetic bridge sensor and the regulator.

公开(公告)号：US10460779B2

公开(公告)日：2019-10-29

申请号：US15891233

申请日：2018-02-07

申请人： Crocus Technology Inc.

发明人： Michael Gaidis ,  Thao Tran

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

摘要： An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.

公开(公告)号：US10191719B2

公开(公告)日：2019-01-29

申请号：US15552508

申请日：2016-02-22

申请人： CROCUS Technology SA

发明人： Sebastien Bandiera ,  Quentin Stainer

IPC分类号： G06F7/58

摘要： A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

公开(公告)号：US10157652B2

公开(公告)日：2018-12-18

申请号：US15578841

申请日：2016-05-31

申请人： CROCUS Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/00 ,  G11C11/16 ,  H03F15/00 ,  G06G7/14 ,  H01F10/32 ,  H01L43/08

摘要： A magnetic device configured to perform an analog adder circuit function and including a plurality of magnetic units. Each magnetic unit includes n magnetic tunnel junctions electrically connected in series via a current line. Each magnetic tunnel junction includes a storage magnetic layer having a storage magnetization, a sense magnetic layer having a sense magnetization, and a tunnel barrier layer. Each magnetic unit also includes n input lines, each being configured to generate a magnetic field adapted for varying a direction of the sense magnetization and a resistance of the n magnetic tunnel junctions, based on an input. Each of the n magnetic units is configured to add said n inputs to generate an output signal that varies in response to the n resistances.

公开(公告)号：US10115445B2

公开(公告)日：2018-10-30

申请号：US15741805

申请日：2016-06-27

申请人： CROCUS Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01L43/02

摘要： A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions—electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.

公开(公告)号：US20180292473A1

公开(公告)日：2018-10-11

申请号：US15481805

申请日：2017-04-07

申请人： CROCUS Technology SA

发明人： Jeffrey Childress ,  Romain Foissac ,  Kenneth MacKay

IPC分类号： G01R33/09 ,  G01R33/00

摘要： A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.