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    Methods of fabricating semiconductor devices including elevated source and drain regions
    61.
    发明授权
    Methods of fabricating semiconductor devices including elevated source and drain regions 有权
    制造包括升高的源极和漏极区域的半导体器件的方法

    公开(公告)号：US07867865B2

    公开(公告)日：2011-01-11

    申请号：US12166575

    申请日：2008-07-02

    Applicant: Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    Inventor： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC: H01L21/336

    CPC classification number: H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    Abstract translation: 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

    Phase-change memory using single element semimetallic layer
    64.
    发明申请
    Phase-change memory using single element semimetallic layer 有权
    使用单元素半金属层的相变存储器

    公开(公告)号：US20090283738A1

    公开(公告)日：2009-11-19

    申请号：US12213234

    申请日：2008-06-17

    Applicant: Tae-yon Lee ,  Ki-Joon Kim ,  Jun-ho Lee ,  Cheol-Kyu Kim

    Inventor： Tae-yon Lee ,  Ki-Joon Kim ,  Jun-ho Lee ,  Cheol-Kyu Kim

    IPC: H01L45/00

    CPC classification number: H01L45/1233 ,  H01L45/06 ,  H01L45/148

    Abstract: Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.

    Abstract translation: 提供了使用单元件半金属薄膜的相变存储器。 该装置包括具有相变材料层和连接到存储节点的开关元件的存储节点，其中存储节点包括形成在上电极和下电极之间的单元件半金属薄膜。 因此，与基于Ge-Sb-Te（GST）的材料的情况相比，可以提高相变存储器的写入速度。

    Vertical external cavity surface emitting laser
    65.
    发明授权
    Vertical external cavity surface emitting laser 失效
    垂直外腔表面发射激光

    公开(公告)号：US07573920B2

    公开(公告)日：2009-08-11

    申请号：US11907473

    申请日：2007-10-12

    Applicant: Jun-ho Lee ,  Sang-moon Lee

    Inventor： Jun-ho Lee ,  Sang-moon Lee

    IPC: H01S3/10

    CPC classification number: H01S5/14 ,  H01S3/109 ,  H01S5/0207 ,  H01S5/024 ,  H01S5/041 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18369

    Abstract: Provided is a Vertical External Cavity Surface Emitting Laser (VECSEL). The VECSEL includes a semiconductor chip, a pump laser, a narrow bandwidth polarization filter, an external mirror, and a Second Harmonic Generation (SHG) element. The semiconductor chip includes an active layer generating light having a wavelength and a reflective layer reflecting the light generated in the active layer. The pump laser emits a pump beam for exciting the active layer. The narrow bandwidth polarization filter is formed on the semiconductor chip and polarizes the light. The external mirror faces the active layer, amplifies the light emitted from the active layer by repeatedly reflecting the light toward the reflective layer, and outputs the amplified light out of the VECSEL. The SHG element is disposed between the narrow bandwidth polarization filter and the external mirror and converts the wavelength of the light.

    Abstract translation: 提供垂直外腔表面发射激光（VECSEL）。 VECSEL包括半导体芯片，泵浦激光器，窄带偏振滤波器，外部反射镜和第二谐波发生（SHG）元件。 半导体芯片包括产生具有波长的光的有源层和反射在有源层中产生的光的反射层。 泵激光器发射用于激发有源层的泵浦光束。 窄带偏振滤波器形成在半导体芯片上并使光线偏振。 外部反射镜面向有源层，通过反射反射层向反射层反射来放大从有源层发射的光，并将放大的光输出VECSEL。 SHG元件设置在窄带偏振滤光器和外反射镜之间，并转换光的波长。

    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same
    67.
    发明申请
    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same 有权
    包括提升源和排水区的半导体器件及其制造方法

    公开(公告)号：US20090008717A1

    公开(公告)日：2009-01-08

    申请号：US12166575

    申请日：2008-07-02

    Applicant: Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    Inventor： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC: H01L21/336 ,  H01L27/088

    CPC classification number: H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    Abstract translation: 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

    PROCESS CARTRIDGE UNIT AND IMAGE FORMING APPARATUS HAVING THE SAME
    68.
    发明申请
    PROCESS CARTRIDGE UNIT AND IMAGE FORMING APPARATUS HAVING THE SAME 有权
    过程盒单元和具有该图像的图像形成装置

    公开(公告)号：US20080317500A1

    公开(公告)日：2008-12-25

    申请号：US12134507

    申请日：2008-06-06

    Applicant: Jun Ho LEE ,  Dong Hoon Park

    Inventor： Jun Ho LEE ,  Dong Hoon Park

    IPC: G03G21/18 ,  G03G21/16

    CPC classification number: G03G21/1842 ,  G03G2221/1687

    Abstract: A process cartridge unit and an image forming apparatus having the same. The image forming apparatus includes a main body, a process cartridge unit removably mounted in the main body, an opening provided in the main body to permit the process cartridge unit to be installed or removed, and a cover rotatably mounted to the main body so as to expose or shield the opening. The process cartridge unit includes a container to store a developer and at least one knob coupled to the container. When the cover is closed, the knob is folded by the cover, and when the cover is opened, the knob is unfolded. Accordingly, since the position of the knob is changed, a mounting space of the process cartridge unit can be decreased, and a user can easily grasp the knob.

    Abstract translation: 处理盒单元和具有该处理盒单元的图像形成装置。 图像形成装置包括主体，可拆卸地安装在主体中的处理盒单元，设置在主体中以允许处理盒单元被安装或拆卸的开口，以及可旋转地安装到主体的盖，以便 露出或屏蔽开口。 处理盒单元包括用于存储显影剂的容器和连接到容器的至少一个旋钮。 当盖子关闭时，手柄被盖子折叠，当盖子打开时，旋钮被展开。 因此，由于旋钮的位置改变，可以减少处理盒单元的安装空间，并且用户可以容易地掌握旋钮。

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