Abstract:
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.
Abstract:
A driving method of an organic light emitting display device includes sensing temperatures of a plurality of areas included in a pixel unit and, when a temperature difference between the respective areas is less than a predetermined reference value, outputting first data that is input from outside. When the temperature difference between the respective areas is equal to or greater than the reference value, the method includes generating second data by changing a grayscale of the first data such that the temperatures of the respective areas are similar to each other, and outputting the second data.
Abstract:
A hydraulic system for a construction machine is disclosed, which can prevent off-course travel of the machine when a combined operation of a traveling device and a working device such as a boom is performed. The hydraulic system for a construction machine includes first and second hydraulic pumps, left and right traveling operation levers and actuator operation levers for first and second working devices, a left traveling motor connected to a discharge flow path of the first hydraulic pump and an actuator for the first working device, a right traveling motor connected to a discharge flow path of the second hydraulic pump and an actuator for the second working device, a first pressure compensated valve installed on one side of an upper stream and a downstream of the first control valve, a second pressure compensated valve installed on one side of an upper stream and a downstream of the second control valve, a third pressure compensated valve, a fourth pressure compensated valve installed on one side of an upper stream and a downstream of the fourth control valve, a first orifice connected to the first pressure compensated valve of the first control valve, a first load sensing line connected to the fourth pressure compensated valve of the fourth control valve, and a hydraulic tank, a second orifice connected to the second pressure compensated valve of the second control valve, a second load sensing line connected to the third pressure compensated valve of the third control valve, and the hydraulic tank, a confluence valve installed in a confluence flow path of the first and second hydraulic pumps, a traveling communication valve installed in a flow path connecting the downstream of the left traveling first pressure compensated valve to the downstream of the right traveling third pressure compensated valve, and a controller controlling communication of the traveling communication valve when a combined operation for simultaneously operating the traveling device and the working device is performed.
Abstract:
A nitride based semiconductor package includes a nitride based semiconductor device, a package substrate, and a bonding substrate. The semiconductor device includes, on a surface thereof, a first electrode pattern having a source electrode, a drain electrode and a gate electrode. The bonding substrate includes, on a first surface thereof, a second electrode pattern corresponding to the first electrode pattern, and at least one first groove pattern. The first groove pattern exposes the second electrode pattern. The first electrode pattern is received in the at least one first groove pattern. The second electrode pattern is bonded to the first electrode pattern received in the at least one first groove pattern. A second surface of the bonding substrate is bonded to the package substrate.
Abstract:
Disclosed is a hydraulic pump for construction machinery for controlling to inhibit one-way driving when compound-operating two-way driving and work devices, such as a boom, to enhance operation efficiency. The hydraulic system for the construction machinery of the present invention provides the hydraulic system comprising: an operation device for driving and an operation lever for the work devices; a left driving motor which connects to a first hydraulic pump; a first control valve which is installed on the discharge flow path of the first hydraulic pump; a right driving motor which is connected to a second hydraulic pump; a hydraulic actuator which is connected to the first hydraulic pump and the second hydraulic pump; a second control valve which is installed on the discharge flow path of the first hydraulic pump or the second hydraulic pump; a third control valve which is installed on a flow path that branches from the discharge flow path of the second flow path; a first bypass valve which is connected to the upstream portion of the discharge flow path of the first hydraulic pump; a second bypass valve which is connected to the upstream portion of the discharge flow path of the second hydraulic pump; a confluence valve which is installed on a flow path which connects in parallel the discharge paths of the first and second hydraulic pumps; and a controller for controlling the opening of the first and second bypass valves and the confluence valve according to an operation signal that is input from the operation device for driving and the operation lever for the work device.
Abstract:
Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.
Abstract:
A touch sensor is installed inside a liquid crystal display panel to sense a touch operation and includes a light sensing part including a photodiode, a capacitance sensing part including a liquid crystal capacitor, and a sensing signal output part. The light sensing part generates a control signal corresponding to a variation in the amount of external light when the liquid crystal display panel is touched. The capacitance sensing part varies the control signal based on a variation in the capacitance of the liquid crystal capacitor when the liquid crystal display panel is touched. The sensing signal output part generates a sensing signal in response to the control signal and determines an output timing of the sensing signal.
Abstract:
Disclosed herein is a camera module. The camera module according to preferred embodiments of the present invention includes: a housing; a printed circuit board disposed in the housing and having a heat dissipating hole formed at a first side thereof; an image sensor bonded to the printed circuit board and disposed on one surface of the heat dissipating hole; and a heat dissipating part having one side contacting the image sensor and the printed circuit board through the heat dissipating hole and the other side disposed at the outside of the housing to discharge heat generated from the image sensor and the printed circuit board to the outside of the housing.
Abstract:
Disclosed is a method of driving a display panel, which includes a plurality of data lines, a plurality of gate lines, a first pixel column electrically connected to an N-th gate line and a second pixel column electrically connected to an (N+1)-th gate line adjacent to the N-th gate line (wherein N is a natural number). In the method, compensation data of the first pixel for compensating for a kickback deviation between the first and second pixel columns is generated using first data and second data corresponding to the first and second pixel columns, respectively. The compensation data of the first pixel column and the second data of the second pixel column are converted to data voltages of an analog type to output the data voltages to the data lines.
Abstract:
A nitride-based semiconductor device is provided. The nitride-based semiconductor device may include an aluminum silicon carbide (AlSixC1-x) pre-treated layer, and thus may ease a stress in a nitride semiconductor layer caused by a difference in properties, for example, a lattice constant and a coefficient of expansion, between the substrate and the nitride semiconductor layer formed on the substrate. Accordingly, an incidence of cracks created in the nitride semiconductor layer may be minimized and a surface roughness of the nitride semiconductor layer may be improved and thus, stability and performance of the nitride-based semiconductor device may be improved. The nitride-based semiconductor device may include a grade AlGaN layer of which an aluminum (Al) content gradually decreases from the substrate and thus, an incidence of cracks created in the nitride semiconductor layer may be minimized and the nitride semiconductor layer having a stable structure may be formed.