Efficient Peak Cancellation Method for Reducing the Peak-To-Average Power Ratio in Wideband Communication Systems
    61.
    发明申请
    Efficient Peak Cancellation Method for Reducing the Peak-To-Average Power Ratio in Wideband Communication Systems 审中-公开
    用于降低宽带通信系统中的峰均功率比的高效峰值抵消方法

    公开(公告)号:US20090285194A1

    公开(公告)日:2009-11-19

    申请号:US12415676

    申请日:2009-03-31

    IPC分类号: H04B7/216 H04B7/00

    摘要: An efficient peak cancellation method for reducing the peak-to-average power ratio in wideband communication systems uses repeated clipping and frequency domain filtering to achieve a desired peak-to-average power ratio for wideband code division multiple access and orthogonal frequency division multiplexing signals. The maximum magnitude of the filtered pulse is determined by a scaling factor which permits eliminating several iterations while still achieving convergence to the targeted peak-to-average power ratio, thereby reducing computational load and saving hardware resources. This results in improved performance in terms of error vector magnitude, adjacent channel leakage ratio and peak-to-average power ratio.

    摘要翻译: 用于降低宽带通信系统中的峰值与平均功率比的有效的峰值抵消方法使用重复的限幅和频域滤波来实现宽带码分多址和正交频分复用信号所需的峰值与平均功率比。 经过滤波的脉冲的最大幅度由缩放因子决定,该比例因子可以消除多次迭代,同时仍然达到目标峰值与平均功率比的收敛,从而减少计算负荷并节省硬件资源。 这导致在误差矢量幅度,相邻信道泄漏比和峰值与平均功率比方面的性能提高。

    Method for fabricating an image sensor mounted by mass reflow
    63.
    发明授权
    Method for fabricating an image sensor mounted by mass reflow 有权
    制造通过质量回流安装的图像传感器的方法

    公开(公告)号:US07491572B2

    公开(公告)日:2009-02-17

    申请号:US10574316

    申请日:2004-09-30

    IPC分类号: H01L21/00 H01L31/0328

    摘要: A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.

    摘要翻译: 提供了一种用于半导体图像拾取装置的封装。 封装通过使用倒装芯片凸块来制造。 在形成金属接合层和用于电镀的金属层的沉积工艺期间,根据第一实施例,半导体图像拾取装置的表面保持在室温和200℃之间的范围内。 用于防止产生应力的聚合物层可以吸收根据第二实施方案的沉积工艺期间产生的应力。 根据本发明,可以防止半导体图像拾取装置的表面上的功能性聚合物层的性质劣化,并且防止其表面变形。

    Image sensor mounted by mass reflow
    64.
    发明申请
    Image sensor mounted by mass reflow 有权
    图像传感器通过质量回流安装

    公开(公告)号:US20070085180A1

    公开(公告)日:2007-04-19

    申请号:US10574316

    申请日:2004-09-30

    IPC分类号: H01L23/02 H01L21/00

    摘要: A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.

    摘要翻译: 提供了一种用于半导体图像拾取装置的封装。 封装通过使用倒装芯片凸块来制造。 在形成金属接合层和用于电镀的金属层的沉积工艺期间,根据第一实施例,半导体图像拾取装置的表面保持在室温和200℃之间的范围内。 用于防止产生应力的聚合物层可以吸收根据第二实施方案的沉积工艺期间产生的应力。 根据本发明,可以防止半导体图像拾取装置的表面上的功能性聚合物层的性质劣化,并且防止其表面变形。