摘要:
An efficient peak cancellation method for reducing the peak-to-average power ratio in wideband communication systems uses repeated clipping and frequency domain filtering to achieve a desired peak-to-average power ratio for wideband code division multiple access and orthogonal frequency division multiplexing signals. The maximum magnitude of the filtered pulse is determined by a scaling factor which permits eliminating several iterations while still achieving convergence to the targeted peak-to-average power ratio, thereby reducing computational load and saving hardware resources. This results in improved performance in terms of error vector magnitude, adjacent channel leakage ratio and peak-to-average power ratio.
摘要:
A method of exchanging channel quality information between a base station and a user equipment in a mobile communication system is disclosed. A method of transmitting channel quality information in a mobile communication system which transmits channel quality information from a user equipment to a base station comprises transmitting channel quality information, which is measured based on a signal received from the base station, to the base station, receiving feedback information of the channel quality information from the base station, and transmitting difference information to the base station, the difference information for matching the channel quality information transmitted from the user equipment with channel quality information received by the base station based on the feedback information.
摘要:
A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.
摘要:
A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.
摘要:
A cathode ray tube includes a tube having a panel having an inner phosphor screen, a funnel connected to the panel, a neck connected to the funnel, a deflection unit disposed around the funnel, an electron gun installed in the neck, and a scatter-proof unit installed on the panel and the funnel such that the panel shares the scatter-proof unit with the funnel for preventing the tube from breaking and scattering into many pieces.
摘要:
A solder terminal and a fabrication method thereof are provided. According to one embodiment of the present invention, a solder terminal structure includes an adhesion metal layer formed on an electrode pad of a semiconductor device, a thermal diffusion barrier, a solder bonding layer, and a solder bump formed on upper portion of the solder bonding layer. With the thermal diffusion layer, the characteristic deterioration caused by the probe mark generated on the electrode pad can be prevented during a semiconductor reliability test, and at the same time, material movement between the layers of the electrode pad, the solder bonding layer and the adhesion metal layer can be reduced. Also, by having the thermal diffusion barrier act as a solder dam (a layer to confine the melted solder area to prevent the solder from being wetted), an additional deposition or etching process can be omitted.
摘要:
A solder terminal and a fabrication method thereof are provided. According to one embodiment of the present invention, a solder terminal structure includes an adhesion metal layer formed on an electrode pad of a semiconductor device, a thermal diffusion barrier, a solder bonding layer, and a solder bump formed on upper portion of the solder bonding layer. With the thermal diffusion layer, the characteristic deterioration caused by the probe mark generated on the electrode pad can be prevented during a semiconductor reliability test, and at the same time, material movement between the layers of the electrode pad, the solder bonding layer and the adhesion metal layer can be reduced. Also, by having the thermal diffusion barrier act as a solder dam (a layer to confine the melted solder area to prevent the solder from being wetted), an additional deposition or etching process can be omitted.