公开(公告)号：US08168469B2

公开(公告)日：2012-05-01

申请号：US12923429

申请日：2010-09-21

Applicant: Jung-hyun Lee ,  Sung-kyu Choi ,  Kyu-sik Kim

Inventor： Jung-hyun Lee ,  Sung-kyu Choi ,  Kyu-sik Kim

IPC: H01L29/02

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1683

Abstract: A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.

Abstract translation: 提供了使用电阻材料的非易失性存储器件及其制造方法。 非易失性存储器件包括开关元件和电连接到开关元件的数据存储部件。 在数据存储部分中，下电极连接到开关元件，并且在下电极上形成预定厚度的绝缘层。 绝缘层具有暴露下电极的接触孔。 数据存储层填充在接触孔中，数据存储层由过渡金属氧化物形成。 在绝缘层和数据存储层上形成上电极。

公开(公告)号：USD657324S1

公开(公告)日：2012-04-10

申请号：US29373058

申请日：2011-02-23

Applicant: Jung-Hyun Lee ,  Jun-Ho Yang

Designer： Jung-Hyun Lee ,  Jun-Ho Yang

公开(公告)号：US08143660B2

公开(公告)日：2012-03-27

申请号：US10797046

申请日：2004-03-11

Applicant: Jung-hyun Lee ,  Burn-seok Seo ,  Yo-sep Min ,  Young-jin Cho

Inventor： Jung-hyun Lee ,  Burn-seok Seo ,  Yo-sep Min ,  Young-jin Cho

IPC: H01L27/108

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02304 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645

Abstract: Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density. Thus, a capacitor including the high k-dielectric oxide film as a dielectric film also exhibits low leakage current and trap density.

Abstract translation: 提供一种制造高k电介质氧化膜的方法，具有使用该方法形成的电介质膜的电容器和制造该电容器的方法。 （a）在ALD装置中加载半导体衬底，（b）在半导体衬底上沉积具有第一元素和第二元素的预定组成比的反应材料，制备高k电介质氧化物膜，和（c ）通过氧化反应材料形成具有两个元件的第一高k电介质氧化物膜，以使第一元件和第二元件同时被氧化。 在该方法中，装置的尺寸减小，生产率提高，制造成本降低。 此外，高k电介质氧化膜表现出高的介电常数和低的漏电流和阱密度。 因此，包括作为电介质膜的高k电介质氧化膜的电容器也具有低泄漏电流和阱密度。

公开(公告)号：USD654447S1

公开(公告)日：2012-02-21

申请号：US29373608

申请日：2011-05-03

Applicant: Jung-Hyun Lee ,  Jun-Ho Yang

Designer： Jung-Hyun Lee ,  Jun-Ho Yang

公开(公告)号：US20110290309A1

公开(公告)日：2011-12-01

申请号：US13114520

申请日：2011-05-24

Applicant: Jung Hyun LEE

Inventor： Jung Hyun LEE

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/06

CPC classification number: H01L31/068 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed is a solar cell and a method for manufacturing the same, which facilitates to improve cell efficiency by smoothly drifting carrier such as hole or electron generated in a semiconductor wafer to first and second electrodes, the solar cell comprising a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a first transparent conductive layer on the first semiconductor layer; a first electrode on the first transparent conductive layer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a second transparent conductive layer on the second semiconductor layer; a second electrode on the second transparent conductive layer; and at least one of first and second auxiliary layers, wherein the first auxiliary layer is formed between the first semiconductor layer and the first transparent conductive layer so as to smoothly drift carriers generated in the semiconductor wafer to the first transparent conductive layer, and the second auxiliary layer is formed between the second semiconductor layer and the second transparent conductive layer so as to smoothly drift carriers generated in the semiconductor wafer to the second transparent conductive layer.

Abstract translation: 公开了一种太阳能电池及其制造方法，其通过将半导体晶片中产生的空穴或电子等载体平滑漂移到第一和第二电极而有利于提高电池效率，该太阳能电池包括具有预定极性的半导体晶片 ; 在半导体晶片的一个表面上的第一半导体层; 在所述第一半导体层上的第一透明导电层; 第一透明导电层上的第一电极; 在所述半导体晶片的另一个表面上的第二半导体层，其中所述第二半导体层的极性与所述第一半导体层不同; 在所述第二半导体层上的第二透明导电层; 第二透明导电层上的第二电极; 以及第一辅助层和第二辅助层中的至少一个，其中第一辅助层形成在第一半导体层和第一透明导电层之间，以便将在半导体晶片中产生的载流子平滑地漂移到第一透明导电层， 辅助层形成在第二半导体层和第二透明导电层之间，以使在半导体晶片中产生的载流子平滑地漂移到第二透明导电层。

公开(公告)号：US07985961B2

公开(公告)日：2011-07-26

申请号：US12003133

申请日：2007-12-20

Applicant: Sang-jun Choi ,  Jung-hyun Lee ,  Chang-soo Lee

Inventor： Sang-jun Choi ,  Jung-hyun Lee ,  Chang-soo Lee

IPC: H01L47/00

CPC classification number: H01L45/1226 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1675

Abstract: Example embodiments may provide resistive random access memory devices and/or methods of manufacturing resistive random access memory devices. Example embodiment resistive random access memory devices may include a switching device and/or a storage node connected to the switching device. The storage node may include a stack structure including a plurality of resistance change layers separated from one another and first and second electrodes each on a side wall of the stack structure. The resistance change layers may be connected to the first and the second electrodes in parallel and/or may have different switching voltages from each other.

Abstract translation: 示例性实施例可以提供电阻性随机存取存储器件和/或制造电阻随机存取存储器件的方法。 示例性实施例电阻随机存取存储器设备可以包括连接到交换设备的交换设备和/或存储节点。 存储节点可以包括堆叠结构，其包括彼此分离的多个电阻变化层以及每个在堆叠结构的侧壁上的第一和第二电极。 电阻变化层可以并联连接到第一和第二电极和/或可以具有彼此不同的开关电压。

公开(公告)号：US20110162698A1

公开(公告)日：2011-07-07

申请号：US12926125

申请日：2010-10-27

Applicant: Xianyu Wenxu ,  Yeon-hee Kim ,  Jung-hyun Lee

Inventor： Xianyu Wenxu ,  Yeon-hee Kim ,  Jung-hyun Lee

IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0224 ,  B82Y30/00

CPC classification number: B82Y30/00 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Solar cells and methods of manufacturing the same, the solar cells include a plurality of nanowire heterostructures, wherein each of the plurality of nanowire heterostructures includes a nanowire including at least one p-type nanowire layer and at least one n-type nanowire layer, and a semiconductor material layer disposed on the nanowire. The semiconductor material layer constitutes a p-n junction with the p-type or n-type nanowire layer. The semiconductor material layer includes at least one of the p-type material layer and the n-type material layer.

Abstract translation: 太阳能电池及其制造方法，太阳能电池包括多个纳米线异质结构，其中，所述多个纳米线异质结构中的每一个都包括包含至少一个p型纳米线层和至少一个n型纳米线层的纳米线，以及 设置在纳米线上的半导体材料层。 半导体材料层与p型或n型纳米线层构成p-n结。 半导体材料层包括p型材料层和n型材料层中的至少一种。

公开(公告)号：US07952974B2

公开(公告)日：2011-05-31

申请号：US12833793

申请日：2010-07-09

Applicant: Hyun-soo Park ,  Jae-seong Shim ,  Jae-wook Lee ,  Jung-hyun Lee ,  Eun-jin Ryu ,  Eing-seob Cho

Inventor： Hyun-soo Park ,  Jae-seong Shim ,  Jae-wook Lee ,  Jung-hyun Lee ,  Eun-jin Ryu ,  Eing-seob Cho

IPC: G11B7/00

CPC classification number: G11B20/10009 ,  G11B20/10203 ,  G11B20/10296 ,  G11B20/10333

Abstract: An apparatus and method for measuring the quality of a signal on an optical disc based on level information of a viterbi decoder are provided. The signal quality measuring apparatus includes: a binary unit that generates binary signals from input RF signals; a channel identifier that receives the input RF signals and the binary signals output from the binary unit and outputs reference level values corresponding to the binary signals; and an information calculator that receives the reference level values and detects a signal quality value.

Abstract translation: 提供了一种基于维特比解码器的电平信息来测量光盘上的信号质量的装置和方法。 信号质量测量装置包括：二进制单元，其从输入的RF信号产生二进制信号; 接收从二进制单元输出的输入RF信号和二进制信号并输出​​对应于二进制信号的参考电平值的信道标识符; 以及信息计算器，其接收参考电平值并检测信号质量值。

公开(公告)号：US20110100448A1

公开(公告)日：2011-05-05

申请号：US12760633

申请日：2010-04-15

Applicant: Jung-Hyun LEE ,  Chang-Soo LEE ,  Dong-Joon MA

Inventor： Jung-Hyun LEE ,  Chang-Soo LEE ,  Dong-Joon MA

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/1868 ,  H01L31/02167 ,  Y02E10/50 ,  Y02P70/521

Abstract: A solar cell including: a semiconductor substrate including a p-type layer and an n-type layer; a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1 xM2O3.ySiO2  Chemical Formula 1 wherein M is a Group 13 element and x and y are real numbers wherein 0

Abstract translation: 一种太阳能电池，包括：包括p型层和n型层的半导体衬底; 设置在半导体衬底上并包含由以下化学式1表示的硅酸盐的介电层xM2O3.ySiO2化学式1其中M是第13族元素，x和y是实数，其中0 <2x

公开(公告)号：US20110092371A1

公开(公告)日：2011-04-21

申请号：US12650312

申请日：2009-12-30

Applicant: Jung Hyun LEE ,  Je Heon JUNG ,  Woon Sik KWON ,  Heui Joo PARK ,  Chi Hwan LEE ,  Yeong Chun KIM

Inventor： Jung Hyun LEE ,  Je Heon JUNG ,  Woon Sik KWON ,  Heui Joo PARK ,  Chi Hwan LEE ,  Yeong Chun KIM

IPC: H01L39/02 ,  F28D15/00

CPC classification number: H02K55/04 ,  F28D11/02 ,  H02K9/193 ,  Y02E40/625

Abstract: Disclosed is a cooling fluid path structure for a superconducting rotating machine, which includes: a fixed inlet fluid path fixed together with the fluid supply means; a rotating inlet fluid path adjacently connected to an outlet of the fixed inlet fluid path, which is for transferring the cooling fluid transferred from the fixed inlet fluid path to a cooling fluid path inlet provided in the rotor while rotating together with the rotor; a rotating outlet fluid path rotating together with the rotor, to which the cooling fluid discharged from a cooling fluid path outlet of the rotor is transferred; and a fixed outlet fluid path adjacently connected to the rotating outlet fluid path, which is for transferring the cooling fluid transferred from the rotating outlet fluid path to the fluid supply means while being fixed together with the fluid supply means, wherein the rotating outlet fluid path and the fixed outlet fluid path are disposed in such a manner that they surround outside of the rotating inlet fluid path and the fixed inlet fluid path.

Abstract translation: 公开了一种用于超导旋转机器的冷却流体路径结构，其包括：与流体供应装置一起固定的固定入口流体路径; 与所述固定入口流体路径的出口相邻地连接的旋转入口流体路径，其用于将从所述固定入口流体路径传递的冷却流体转移到设置在所述转子中的与所述转子一起旋转的冷却流体通道入口; 与转子一起旋转的旋转出口流体路径，从转子的冷却流体通道出口排出的冷却流体被转移到转子上; 以及与所述旋转出口流体路径相邻连接的固定出口流体路径，其用于将与所述流体供应装置一起固定的从所述旋转出口流体路径传递的冷却流体传送到所述流体供应装置，其中所述旋转出口流体路径 并且固定出口流体路径以这样的方式设置，使得它们围绕旋转入口流体路径和固定入口流体路径的外部。