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    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20110100448A1

    公开(公告)日：2011-05-05

    申请号：US12760633

    申请日：2010-04-15

    申请人： Jung-Hyun LEE ,  Chang-Soo LEE ,  Dong-Joon MA

    发明人： Jung-Hyun LEE ,  Chang-Soo LEE ,  Dong-Joon MA

    IPC分类号： H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/1868 ,  H01L31/02167 ,  Y02E10/50 ,  Y02P70/521

    摘要： A solar cell including: a semiconductor substrate including a p-type layer and an n-type layer; a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1 xM2O3.ySiO2  Chemical Formula 1 wherein M is a Group 13 element and x and y are real numbers wherein 0

    摘要翻译： 一种太阳能电池，包括：包括p型层和n型层的半导体衬底; 设置在半导体衬底上并包含由以下化学式1表示的硅酸盐的介电层xM2O3.ySiO2化学式1其中M是第13族元素，x和y是实数，其中0 <2x

    Magnetron cathode and magnetron sputtering apparatus comprising the same
    2.
    发明授权
    Magnetron cathode and magnetron sputtering apparatus comprising the same 有权
    磁控管阴极和包含该磁控溅射装置的磁控溅射装置

    公开(公告)号：US07052583B2

    公开(公告)日：2006-05-30

    申请号：US10755452

    申请日：2004-01-13

    申请人： Sergiy Yakovlevich Navala ,  Yuri Nikolaevich Tolmachev ,  Dong-joon Ma ,  Tae-wan Kim

    发明人： Sergiy Yakovlevich Navala ,  Yuri Nikolaevich Tolmachev ,  Dong-joon Ma ,  Tae-wan Kim

    IPC分类号： C23C14/00

    CPC分类号： C23C14/35 ,  H01J37/3408

    摘要： A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.

    摘要翻译： 提供了一种磁控管阴极和包括该磁控管阴极的溅射装置。 磁控管阴极包括三个或更多个磁体单元，每个磁体单元包括单个磁体或具有朝向相同方向的相同磁极的多个磁体，其中一个磁体单元围绕另一个磁体单元的外圆周设置，并且相邻的磁体单元 具有朝向相同方向的相对极。 获得均匀的磁场分布。 因此，目标的侵蚀特征是宽而均匀的。

    Methods of preparing a graphene sheet
    4.
    发明授权
    Methods of preparing a graphene sheet 有权
    制备石墨烯片的方法

    公开(公告)号：US08632855B2

    公开(公告)日：2014-01-21

    申请号：US12656823

    申请日：2010-02-17

    申请人： Xianyu Wenxu ,  Dong-joon Ma ,  Jung-hyun Lee

    发明人： Xianyu Wenxu ,  Dong-joon Ma ,  Jung-hyun Lee

    IPC分类号： B05D3/02 ,  C01B31/04

    CPC分类号： H05B3/145 ,  H05B2214/04

    摘要： Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.

    摘要翻译： 提供了制备碳基片材的方法，所述方法包括通过对包含含碳材料的基材进行退火处理，将基材上的含碳材料对准并在基板上形成碳基片材。 碳基片可以是石墨烯片。

    SONOS type memory device
    6.
    发明申请
    SONOS type memory device 失效
    SONOS型存储设备

    公开(公告)号：US20050205920A1

    公开(公告)日：2005-09-22

    申请号：US11070090

    申请日：2005-03-03

    申请人： Sang-hun Jeon ,  Chung-woo Kim ,  Dong-joon Ma ,  Sung-kyu Choi

    发明人： Sang-hun Jeon ,  Chung-woo Kim ,  Dong-joon Ma ,  Sung-kyu Choi

    IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L27/10 ,  H01L27/108 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L31/119

    CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28282 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L29/513 ,  H01L29/792

    摘要： A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.

    摘要翻译： SONOS型存储器包括半导体衬底，掺杂有预定电导率的杂质离子的半导体衬底中的第一和第二杂质区，彼此隔开预定距离，第一和第二杂质区之间的沟道区，以及数据存储 在第一和第二杂质区之间的半导体衬底上。 数据存储型堆叠包括依次形成的隧道氧化物层，用于存储数据的存储节点层，阻挡氧化物层和电极层。 存储节点层的介电常数高于隧道和阻塞氧化物层的介电常数，并且存储器节点层的带偏移低于隧道和阻塞氧化物层的带偏移。 隧道氧化物层和阻挡氧化物层是高介电绝缘层。

    Method of manufacturing silicon film by using silicon solution process
    7.
    发明申请
    Method of manufacturing silicon film by using silicon solution process 有权
    使用硅溶液工艺制造硅膜的方法

    公开(公告)号：US20100304043A1

    公开(公告)日：2010-12-02

    申请号：US12659329

    申请日：2010-03-04

    申请人： Jung-hyun Lee ,  Dong-joon Ma

    发明人： Jung-hyun Lee ,  Dong-joon Ma

    IPC分类号： B05D3/06

    CPC分类号： C23C18/122 ,  C23C18/1254 ,  C23C18/14 ,  H01L21/288 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

    摘要： Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.

    摘要翻译： 提供可以通过使用Si溶液法制造硅（Si）膜的方法。 根据制造Si膜的方法，可以通过制备Si形成溶液来制造Si膜。 可以将紫外线（UV）照射在所制备的Si形成溶液中。 Si形成溶液可以涂覆在基底上，并且Si形成溶液中的溶剂可以涂覆在基底上。 可以将电子束照射在去除溶剂的Si形成溶液中。

    Inductively coupled antenna and plasma processing apparatus using the same
    9.
    发明授权
    Inductively coupled antenna and plasma processing apparatus using the same 有权
    电感耦合天线和使用其的等离子体处理装置

    公开(公告)号：US07740738B2

    公开(公告)日：2010-06-22

    申请号：US10748277

    申请日：2003-12-31

    申请人： Tae-wan Kim ,  Yuri Nikolaevich Tolmachev ,  Dong-joon Ma

    发明人： Tae-wan Kim ,  Yuri Nikolaevich Tolmachev ,  Dong-joon Ma

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321

    摘要： An inductively coupled antenna for installation on a reaction chamber of an inductively coupled plasma (ICP) processing apparatus and for connection to a radio frequency (RF) power source to induce an electric field for ionizing a reactant gas injected into the reaction chamber and for generating plasma includes a coil having a plurality of turns including an outermost turn and a plurality of inner turns, wherein a current flowing through the outermost turn is larger than a current flowing through the plurality of inner turns. The outermost turn and the inner turns are connected to the RF power supply in parallel and the inner turns are connected to each other in series. The inductively coupled antenna further includes a conductive metal tube that has a cooling path and a conductive metal strip that is electrically and thermally connected to a lower portion of the metal tube.

    摘要翻译： 一种电感耦合天线，用于安装在电感耦合等离子体（ICP）处理装置的反应室上，并用于连接到射频（RF）电源，以诱发用于电离注入反应室的反应气体的电场并产生 等离子体包括具有多个匝的线圈，其包括最外匝和多匝，其中流过最外匝的电流大于流过多个内匝的电流。 最外圈和内圈与RF电源并联连接，内圈相互串联连接。 电感耦合天线还包括导电金属管，该导电金属管具有电连接和热连接到金属管的下部的导电金属带。

    Methods of polarizing transparent conductive oxides, electronic devices including polarized transparent conductive oxides, and methods of manufacturing the electronic devices
    10.
    发明申请
    Methods of polarizing transparent conductive oxides, electronic devices including polarized transparent conductive oxides, and methods of manufacturing the electronic devices 审中-公开
    偏振透明导电氧化物的方法，包括偏光透明导电氧化物的电子器件，以及制造电子器件的方法

    公开(公告)号：US20100110346A1

    公开(公告)日：2010-05-06

    申请号：US12588383

    申请日：2009-10-14

    申请人： Jung-hyun Lee ,  Dong-joon Ma

    发明人： Jung-hyun Lee ,  Dong-joon Ma

    IPC分类号： G02F1/1347 ,  G21G1/10 ,  G02F1/13

    CPC分类号： G02F1/13439 ,  G02F2001/133397 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02689

    摘要： Provided are methods of polarizing a transparent conductive oxide (TCO), electronic devices including a polarized TCO, and methods of manufacturing the electronic devices. A transparent conductive oxide formed on a substrate is polarized by electron beam annealing the transparent conductive oxide until a polarization voltage is generated in the transparent conductive oxide. The transparent conductive oxide may be a ZnO film or AlZnO film, where A is a cation. The electron beam annealing may be performed at about room temperature for less than about 60 minutes.

    摘要翻译： 提供了使透明导电氧化物（TCO），包括极化TCO的电子器件偏振的方法和制造电子器件的方法。 形成在基板上的透明导电氧化物通过对透明导电氧化物进行电子束退火而极化，直到在透明导电氧化物中产生极化电压。 透明导电氧化物可以是ZnO膜或AlZnO膜，其中A是阳离子。 电子束退火可以在约室温下进行少于约60分钟。