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公开(公告)号：US10648796B2
公开(公告)日：2020-05-12
申请号：US15885504
申请日：2018-01-31
发明人： Noam Sapiens , Kevin A. Peterlinz , Alexander Buettner , Kerstin Purrucker , Andrei V. Shchegrov
IPC分类号： G01B11/24 , G03F7/20 , G01N21/21 , G01N21/956
摘要： Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.
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公开(公告)号：US20200132610A1
公开(公告)日：2020-04-30
申请号：US16389442
申请日：2019-04-19
发明人： Bjorn Brauer
IPC分类号： G01N21/88 , G01N21/95 , G01N21/956
摘要： Based on job dumps for defects of interest and nuisance events for multiple optical modes, detection algorithms, and attributes, the best combination of the aforementioned is identified. Combinations of each of the modes with each of the detection algorithms can be compared for all the defects of interest detected at an offset of zero. Capture rate versus nuisance rate can be determined for one of the attributes in each of the combinations.
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公开(公告)号：US20200126212A1
公开(公告)日：2020-04-23
申请号：US16364161
申请日：2019-03-25
发明人： Brian Duffy , Martin Plihal , Santosh Bhattacharyya , Gordon Rouse , Chris Maher , Erfan Soltanmohammadi
IPC分类号： G06T7/00 , H01L21/66 , G06T7/11 , G01R31/308 , G03F7/20
摘要： Methods and systems for setting up inspection of a specimen with design and noise based care areas are provided. One system includes one or more computer subsystems configured for generating a design-based care area for a specimen. The computer subsystem(s) are also configured for determining one or more output attributes for multiple instances of the care area on the specimen, and the one or more output attributes are determined from output generated by an output acquisition subsystem for the multiple instances. The computer subsystem(s) are further configured for separating the multiple instances of the care area on the specimen into different care area sub-groups such that the different care area sub-groups have statistically different values of the output attribute(s) and selecting a parameter of an inspection recipe for the specimen based on the different care area sub-groups.
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公开(公告)号：US10605722B2
公开(公告)日：2020-03-31
申请号：US15836160
申请日：2017-12-08
发明人： Hidong Kwak , John Lesoine , Malik Sadiq , Lanhua Wei , Shankar Krishnan , Leonid Poslavsky , Mikhail M. Sushchik
摘要： Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.
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公开(公告)号：US20200072763A1
公开(公告)日：2020-03-05
申请号：US16613787
申请日：2018-05-14
发明人： Shishir Suman , Kenong Wu , Hong Chen
IPC分类号： G01N21/956 , G01N21/95 , G01N23/2251
摘要： Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.
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公开(公告)号：US10572991B2
公开(公告)日：2020-02-25
申请号：US15837582
申请日：2017-12-11
发明人： Hong Chen , Michael Cook , Pavan Kumar , Kenong Wu
摘要： A method may include, but is not limited to, receiving a plurality of reference images of a wafer. The method may include, but is not limited to, receiving the plurality of test images of the wafer. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a coarse alignment process. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a fine alignment process after alignment via the coarse alignment process. The fine alignment process may include measuring individual offsets and correcting individual offset data between at least one of the plurality of reference images and the plurality of test images.
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公开(公告)号：US10571407B2
公开(公告)日：2020-02-25
申请号：US16400644
申请日：2019-05-01
摘要： Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.
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公开(公告)号：US10571248B2
公开(公告)日：2020-02-25
申请号：US15649259
申请日：2017-07-13
发明人： Helen Liu , Andrew Zeng
IPC分类号： G01B11/06 , G01B11/24 , G01N21/84 , G01N21/956 , G01N21/95
摘要： A system includes one or more wafer geometry measurement tools configured to obtain geometry measurements from a wafer. The system also includes one or more processors in communication with the one or more wafer geometry measurement tools. The one or more processors are configured to apply a correction model to correct the geometry measurements obtained by the one or more wafer geometry measurement tools. The correction model is configured to correct measurement errors caused by a transparent film positioned on the wafer.
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公开(公告)号：US10558123B2
公开(公告)日：2020-02-11
申请号：US16161010
申请日：2018-10-15
IPC分类号： H01J37/073 , G03F7/20 , H01J1/34 , H01J1/304 , H01J35/06
摘要： An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.
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公开(公告)号：US10551166B2
公开(公告)日：2020-02-04
申请号：US16150268
申请日：2018-10-02
IPC分类号： G01B11/06
摘要： Apparatus and methods for performing optically based film thickness measurements of highly absorbing films (e.g., high-K dielectric films) with improved measurement sensitivity are described herein. A highly absorbing film layer is fabricated on top of a highly reflective film stack. The highly reflective film stack includes one or more nominally identical sets of multiple layers of different, optically contrasting materials. The highly reflective film stack gives rise to optical resonance in particular wavelength ranges. The high reflectance at the interface of the highly absorbing film layer and the highly reflective film stack increases measured light intensity and measurement sensitivity. The thickness and optical dispersion of the different material layers of the highly reflective film stack are selected to induce optical resonance in a desired wavelength range. The desired wavelength range is selected to minimize absorption by the highly absorbing film under measurement.
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