公开(公告)号：US20090025879A1

公开(公告)日：2009-01-29

申请号：US11828713

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: H01L21/306

CPC classification number: H01J37/20 ,  H01J37/16 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.

Abstract translation: RF接地回流电流通过提供旁路电流流动路径而被转移离开反应室的非对称特征。 旁路电流流动路径避免了室底部中的泵送口，避免了晶片狭缝阀，并且由接合到晶片基座并从晶片基座延伸的导电环形挡板提供。 可以通过在侧壁中提供一个或多个绝缘环或通过提供电介质侧壁来阻止低于环形挡板水平面的电流。

公开(公告)号：US07479456B2

公开(公告)日：2009-01-20

申请号：US10929104

申请日：2004-08-26

Applicant: Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth S. Collins ,  Amir Al-Bayati

Inventor： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth S. Collins ,  Amir Al-Bayati

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/67109 ,  H01L21/6831

Abstract: A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

Abstract translation: 在等离子体反应器中从晶片去除热量的同时静电夹持晶片的方法包括在圆盘上提供抛光的大致连续的表面，将晶片放置在圆盘的抛光表面上并冷却圆盘。 将夹持电压施加到圆盘内的电极，以足够的力将晶片静电拉到圆盘的表面上，以获得在圆盘和晶片的接触表面之间选择的传热系数。

公开(公告)号：US20080180028A1

公开(公告)日：2008-07-31

申请号：US11733770

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01J7/00

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

Abstract translation: 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

公开(公告)号：US20080179290A1

公开(公告)日：2008-07-31

申请号：US11685915

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C23F1/00

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is confined so as to establish a gap at the edge on the order of about 1% of the diameter of the chamber, the gap corresponding to a boundary between an upper process zone containing the front side and a lower process zone containing the backside. Before the workpiece temperature exceeds about 200 degrees C., backside polymer is removed using a first plasma containing polymer etch species in the lower process zone. After the workpiece temperature reaches about 300 degrees C., photoresist is stripped from the workpiece front side using by-products of a second plasma containing a photoresist strip species in the upper process zone.

Abstract translation: 工件被支撑在真空室的背面，同时留下工件的后侧的周边环形部分露出。 该过程首先在低于约200℃的温度下开始增加工件的温度。工件的边缘被限制以便在边缘处建立约1％直径的间隙， 间隙对应于包含前侧的上处理区域和包含背面的下处理区域之间的边界。 在工件温度超过约200℃之前，使用在较低工艺区域中的含有聚合物蚀刻物质的第一等离子体来去除背面聚合物。 在工件温度达到约300摄氏度之后，使用在上工艺区域中含有光刻带材料的第二等离子体的副产品从工件正面剥离光致抗蚀剂。

公开(公告)号：US20080179288A1

公开(公告)日：2008-07-31

申请号：US11685767

申请日：2007-03-14

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C23F1/00

CPC classification number: H01L21/0206 ,  H01L21/67115 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a lower external chamber from a polymer etch precursor gas, and an etchant by-product is introduced from the first plasma into the lower process zone. A second plasma is generated in an upper external plasma chamber from a precursor gas of a scavenger of the etchant by-product, and scavenger species are introduced from the second plasma into the upper process zone.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界 和一个含有背面的下部工艺区。 在来自聚合物蚀刻前体气体的下部外部室中产生第一等离子体，并且将蚀刻剂副产物从第一等离子体引入下部工艺区域。 在来自蚀刻剂副产物的清除剂的前体气体的上部外部等离子体室中产生第二等离子体，并且清除剂物质从第二等离子体引入上部工艺区域。

公开(公告)号：US20080179009A1

公开(公告)日：2008-07-31

申请号：US11685775

申请日：2007-03-14

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: H01L21/306

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. The reactor further includes a local plasma-generating chamber and a nozzle disposed on a side of the workpiece support apparatus that is opposite a support surface of the workpiece support apparatus where the workpiece is to reside, the nozzle coupled to receive plasma from the local plasma-generating chamber. The nozzle is directed at a target area of the annular periphery so as to direct a plasma stream at the workpiece backside. A supply of a polymer etch precursor gas is coupled to the local plasma-generating chamber. A rotation actuator rotates the workpiece support apparatus relative to the nozzle.

Abstract translation: 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面对天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间划分室的边界 区。 真空泵联接到下部处理区。 反应器还包括局部等离子体产生室和设置在工件支撑装置的与工件所在的工件支撑装置的支撑表面相对的一侧的喷嘴，喷嘴被连接以接收来自局部等离子体的等离子体 生成室。 喷嘴指向环形周边的目标区域，以便在工件背面引导等离子体流。 聚合物蚀刻前体气体的供应物连接到局部等离子体产生室。 旋转致动器相对于喷嘴旋转工件支撑装置。

公开(公告)号：US20080178913A1

公开(公告)日：2008-07-31

申请号：US11685902

申请日：2007-03-14

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: B08B7/00

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。

公开(公告)号：US07393765B2

公开(公告)日：2008-07-01

申请号：US11788523

申请日：2007-04-19

Applicant: Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/44 ,  H01L21/425

CPC classification number: H01L21/02274 ,  C23C14/48 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/02126 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  Y10T29/5313

Abstract: Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.

Abstract translation: 通过在每个N沟道和P沟道器件组中的每一个上对光阻单元进行连续掩蔽，同时在CMOS器件上沉积器件增强涂层，同时对另一个器件进行掩蔽或者脱离另一个器件，并且在每个步骤连续地掩蔽器件组中的一个器件 在施加RF等离子体偏压的同时，用环形RF等离子体电流进行低温CVD步骤。 工件的温度保持在阈值光刻胶去除温度以下。 当未屏蔽组由P沟道器件组成并且当未屏蔽组由N沟道器件组成时，RF偏置电压保持在第一应力下沉积涂层的水平。

公开(公告)号：US20080138967A1

公开(公告)日：2008-06-12

申请号：US11608357

申请日：2006-12-08

Applicant: Shijian Li ,  Kartik Ramaswamy ,  Biagio Gallo ,  Dong Hyung Lee ,  Majeed A. Foad

Inventor： Shijian Li ,  Kartik Ramaswamy ,  Biagio Gallo ,  Dong Hyung Lee ,  Majeed A. Foad

IPC: H01L21/425

CPC classification number: H01L21/2236 ,  H01L29/66575

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.

Abstract translation: 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子 混合物进入底物。 在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到腔室中，以及将离子从气体混合物注入到衬底中。

公开(公告)号：US07288491B2

公开(公告)日：2007-10-30

申请号：US11046562

申请日：2005-01-28

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: H01L21/469 ,  H01L21/31 ,  B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

Abstract: One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

Abstract translation: 在等离子体反应器室中的工件上进行等离子体浸没离子注入的一种方法包括：在工件被引入之前，首先在等离子体反应器室的内表面上沉积调味膜，通过将调味膜前体气体引入室中， 在室内的等离子体，通过将注入种类前体气体引入到腔室中并产生等离子体，然后从腔室中移出工件并从室内表面除去调味膜，从而在工件上进行等离子体浸没离子注入。