公开(公告)号：US20070013050A1

公开(公告)日：2007-01-18

申请号：US11396197

申请日：2006-03-31

Applicant: Ching-Chien Chen ,  Kun-Huang Chang ,  Yi-Wen Chen

Inventor： Ching-Chien Chen ,  Kun-Huang Chang ,  Yi-Wen Chen

IPC: H01L23/00

CPC classification number: H01H85/0411 ,  H01H85/0078 ,  H01H85/17 ,  H01H85/185 ,  H01H2085/0414

Abstract: This invention is novel structure of an over-current protection device and manufacturing method thereof. The over-current protection device is formed with a main body with a lead frame and a ceramic fiber lead wound by a metal wire exteriorly, by coating the exterior of the whole lead with a thermally-insulating material, and then cladding the lead with a flame retardation material having an electrical insulation characteristic.

Abstract translation: 本发明是一种过电流保护装置的新颖结构及其制造方法。 过电流保护装置形成有主体，其具有引线框架和陶瓷纤维引线，外部由金属线缠绕，通过用绝热材料涂覆整个引线的外部，然后用铅包覆引线 具有电绝缘特性的阻燃材料。

公开(公告)号：US09609346B2

公开(公告)日：2017-03-28

申请号：US13236422

申请日：2011-09-19

Applicant: Jian-Liang Lin ,  Yu-Pao Tsai ,  Yi-Wen Chen ,  Jicheng An ,  Yu-Wen Huang ,  Shaw-Min Lei

Inventor： Jian-Liang Lin ,  Yu-Pao Tsai ,  Yi-Wen Chen ,  Jicheng An ,  Yu-Wen Huang ,  Shaw-Min Lei

IPC: H04N19/56 ,  H04N19/513 ,  H04N19/52 ,  H04N19/57 ,  H04N19/583

CPC classification number: H04N19/513 ,  H04N19/105 ,  H04N19/176 ,  H04N19/46 ,  H04N19/52 ,  H04N19/56 ,  H04N19/57 ,  H04N19/583

Abstract: A method and apparatus for deriving a temporal motion vector predictor (MVP) are disclosed. The MVP is derived for a current block of a current picture in Inter, or Merge, or Skip mode based on co-located reference blocks of a co-located block and a flag is used to indicate the co-located picture. More than one co-located reference blocks can be used to derive the temporal MVP and the co-located reference blocks can be selected from the co-located block as well as neighboring blocks of the co-located block. A search set comprises search motion vectors associated with the co-located reference block(s) is formed. The search motion vector (MV) corresponding to the co-located reference block in the same reference list is searched before the search MV in a different reference list. Various schemes to accommodate implicit method of deriving co-located picture are also disclosed.

公开(公告)号：US09384962B2

公开(公告)日：2016-07-05

申请号：US13082387

申请日：2011-04-07

Applicant: Guang-Yaw Hwang ,  Chun-Hsien Lin ,  Hung-Ling Shih ,  Jiunn-Hsiung Liao ,  Zhi-Cheng Lee ,  Shao-Hua Hsu ,  Yi-Wen Chen ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Tong-Jyun Huang ,  Jie-Ning Yang ,  Tsung-Lung Tsai ,  Po-Jui Liao ,  Chien-Ming Lai ,  Ying-Tsung Chen ,  Cheng-Yu Ma ,  Wen-Han Hung ,  Che-Hua Hsu

Inventor： Guang-Yaw Hwang ,  Chun-Hsien Lin ,  Hung-Ling Shih ,  Jiunn-Hsiung Liao ,  Zhi-Cheng Lee ,  Shao-Hua Hsu ,  Yi-Wen Chen ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Tong-Jyun Huang ,  Jie-Ning Yang ,  Tsung-Lung Tsai ,  Po-Jui Liao ,  Chien-Ming Lai ,  Ying-Tsung Chen ,  Cheng-Yu Ma ,  Wen-Han Hung ,  Che-Hua Hsu

IPC: H01L21/28 ,  H01L21/02

CPC classification number: H01L29/517 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7845 ,  H01L29/7846

Abstract: A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Abstract translation: 提供一种制造金属栅极的方法。 该方法包括提供基板。 然后，在基板上形成栅极电介质层。 在栅极电介质层上形成具有功函数金属层的多层堆叠结构。 在多层堆叠结构的至少一层上进行O2气氛处理。 在多层堆叠结构上形成导电层。

公开(公告)号：US20160065964A1

公开(公告)日：2016-03-03

申请号：US14785011

申请日：2014-06-24

Applicant: Kai ZHANG ,  Yi-wen CHEN ,  Ji-an-Liang LIN ,  Jicheng AN ,  Xianguo ZHANG

Inventor： Kai ZHANG ,  Yi-Wen CHEN ,  Jian-Liang LIN ,  Jicheng AN ,  Xianguo ZHANG

IPC: H04N19/13 ,  H04N19/96 ,  H04N19/597 ,  H04N19/157 ,  H04N19/176

CPC classification number: H04N19/13 ,  H04N19/157 ,  H04N19/176 ,  H04N19/597 ,  H04N19/91 ,  H04N19/96

Abstract: A method for reducing the storage requirement or complexity of context-based coding in three-dimensional or multi-view video encoding and decoding is disclosed. The system selects the context based on selected information associated with one or more neighboring blocks of the current block conditionally depending on whether the one or more neighboring blocks are available. The syntax element is then encoded or decoded using context-based coding according to the context selection. The syntax element to be coded may correspond to an IC (illumination compensation) flag or an ARP (advanced residual prediction) flag. In another example, one or more syntax elements for coding a current depth block using DMM (Depth Map Model) are encoded or decoded using context-based coding, where the context-based coding selects a by-pass mode for at least one selected syntax element.

Abstract translation: 公开了一种用于减少三维或多视图视频编码和解码中的基于上下文的编码的存储要求或复杂性的方法。 该系统有条件地根据一个或多个相邻块是否可用，基于与当前块的一个或多个相邻块相关联的所选择的信息来选择上下文。 然后根据上下文选择使用基于上下文的编码对语法元素进行编码或解码。 要编码的语法元素可以对应于IC（照明补偿）标志或ARP（高级残差预测）标志。 在另一示例中，使用DMM（深度图模型）对当前深度块进行编码的一个或多个语法元素使用基于上下文的编码进行编码或解码，其中基于上下文的编码为至少一个选择的语法选择旁路模式 元件。

公开(公告)号：US08816439B2

公开(公告)日：2014-08-26

申请号：US12907036

申请日：2010-10-19

Applicant: Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

Inventor： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC: H01L29/76 ,  H01L27/11

CPC classification number: H01L27/11

Abstract: A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.

Abstract translation: 半导体器件的栅极结构包括第一低电阻导电层，第二低电阻导电层和设置在第一低电阻导电层和第二低电阻导电层的侧壁之间且直接接触的第一类型导电层。

公开(公告)号：US20130243098A1

公开(公告)日：2013-09-19

申请号：US13990345

申请日：2012-03-13

Applicant: Jian-Liang Lin ,  Yi-Wen Chen ,  Yu-Pao Tsai ,  Yu-Wen Huang ,  Shaw-Min Lei

Inventor： Jian-Liang Lin ,  Yi-Wen Chen ,  Yu-Pao Tsai ,  Yu-Wen Huang ,  Shaw-Min Lei

IPC: H04N7/36

CPC classification number: H04N19/52 ,  H04N19/533 ,  H04N19/56

Abstract: An apparatus and method for deriving a motion vector predictor are disclosed. A search set comprising of multiple (spatial, or temporal) search MVs with priority is determined, wherein the search MVs for multiple neighboring reference block or one or more co-located reference blocks arc configured into multiple search MV groups. In order to improve coding efficiency, embodiments according to the present invention, perform redundancy check every time after a search MV group is searched to determine whether an available search MV found. If an available search MV is found and the available search MV is not the same as a previously derived motion vector predictor (MVP), the available search MV is used as the MVP and the MVP derivation process terminates. Otherwise, the MVP derivation process moves to the next reference block. The search MV group can be configured to include different search MV(s) associated with reference blocks.

Abstract translation: 公开了一种用于导出运动矢量预测器的装置和方法。 确定包括具有优先级的多个（空间或时间）搜索MV的搜索集合，其中用于多个相邻参考块或一个或多个同位置参考块的搜索MV被配置成多个搜索MV组。 为了提高编码效率，根据本发明的实施例，在搜索MV组被搜索之后每次执行冗余校验，以确定是否找到可用的搜索MV。 如果找到可用的搜索MV并且可用的搜索MV与先前导出的运动向量预测器（MVP）不相同，那么使用可用的搜索MV作为MVP并且MVP导出处理终止。 否则，MVP导出过程移动到下一个参考块。 搜索MV组可以被配置为包括与参考块相关联的不同搜索MV。

公开(公告)号：US08472648B2

公开(公告)日：2013-06-25

申请号：US12813730

申请日：2010-06-11

Applicant: Yunlong Wang ,  Yi-Wen Chen

Inventor： Yunlong Wang ,  Yi-Wen Chen

IPC: H04R25/00

CPC classification number: H04R19/005 ,  H01L2924/16151 ,  H01L2924/16152 ,  Y10T29/49005

Abstract: MEMS microphone packages and fabrication methods thereof are disclosed. A MEMS microphone package includes a casing with a conductive part disposed over a substrate, to enclose a cavity. A MEMS acoustic sensing element and an IC chip are disposed inside the cavity. An opening with an acoustic passage connects the cavity to an ambient space. A first ground pad is disposed on a backside of the substrate connecting to the conductive part of the casing through a via hole of the substrate. A second ground pad is disposed on the backside of the substrate connecting to the MEMS acoustic sensing element or the IC chip through an interconnection of the substrate, wherein the first ground pad and the second ground pad are isolated from each other.

Abstract translation: 公开了MEMS麦克风封装及其制造方法。 MEMS麦克风封装包括具有设置在基板上方的导电部分以封闭空腔的壳体。 MEMS声学传感元件和IC芯片设置在腔内。 具有声通道的开口将空腔连接到环境空间。 第一接地焊盘设置在通过基板的通孔连接到壳体的导电部分的基板的背面。 第二接地焊盘通过衬底的互连设置在连接到MEMS声学感测元件或IC芯片的衬底的背面上，其中第一接地焊盘和第二接地焊盘彼此隔离。

公开(公告)号：US20120322218A1

公开(公告)日：2012-12-20

申请号：US13161591

申请日：2011-06-16

Applicant: Chien-Ming LAI ,  Yi-Wen Chen ,  Zhi-Cheng Lee ,  Tong-Jyun Huang ,  Che-Hua Hsu ,  Kun-Hsien Lin ,  Tzung-Ying Lee ,  Chi-Mao Hsu ,  Hsin-Fu Huang ,  Chin-Fu Lin

Inventor： Chien-Ming LAI ,  Yi-Wen Chen ,  Zhi-Cheng Lee ,  Tong-Jyun Huang ,  Che-Hua Hsu ,  Kun-Hsien Lin ,  Tzung-Ying Lee ,  Chi-Mao Hsu ,  Hsin-Fu Huang ,  Chin-Fu Lin

IPC: H01L21/336

CPC classification number: H01L29/6659 ,  H01L21/28088 ,  H01L21/32134 ,  H01L21/823842 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7833

Abstract: A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.

Abstract translation: 一种制造半导体器件的方法包括以下步骤。 首先，提供具有伪栅极电极层的虚拟栅极结构。 然后，去除虚拟栅极电极层，以在虚拟栅极结构中形成开口，从而暴露在伪栅极电极层下面的下面的层。 然后，进行氢氧化铵处理处理以处理伪栅极结构。 之后，将金属材料填充到开口中。

公开(公告)号：US20120183069A1

公开(公告)日：2012-07-19

申请号：US13019054

申请日：2011-02-01

Applicant: WEN-HSIAO PENG ,  YI-WEN CHEN

Inventor： WEN-HSIAO PENG ,  YI-WEN CHEN

IPC: H04N7/32

CPC classification number: H04N19/583

Abstract: The present invention discloses a frame prediction system and a prediction method thereof. An initializing module initializes a first image block having a plurality of pixels. A providing module provides a first centroid and a first motion vector of a second image block. The location lookup module finds a location according to the first centroid, and generates a first weight and a second weight respectively according to a relationship between each of the pixels, the first centroid and the location. A vector lookup module finds a second motion vector, which gives a minimum pixel intensity error for the plurality of pixels in the first image block according to the first centroid, the first motion vector, the location, the first weight and the second weight. A processing module sequentially calculates a plurality of predictive intensity values according to the motion vectors and the weights.

Abstract translation: 本发明公开了一种帧预测系统及其预测方法。 初始化模块初始化具有多个像素的第一图像块。 提供模块提供第二图像块的第一质心和第一运动矢量。 位置查找模块根据第一质心找到位置，并根据每个像素，第一质心和位置之间的关系分别产生第一权重和第二权重。 向量查找模块找到第二运动矢量，其给出根据第一质心，第一运动矢量，位置，第一权重和第二权重的第一图像块中的多个像素的最小像素强度误差。 处理模块根据运动矢量和权重顺序地计算多个预测强度值。

公开(公告)号：US20100246877A1

公开(公告)日：2010-09-30

申请号：US12813730

申请日：2010-06-11

Applicant: Yunlong Wang ,  Yi-Wen Chen

Inventor： Yunlong Wang ,  Yi-Wen Chen

IPC: H04R1/04 ,  H04R31/00

CPC classification number: H04R19/005 ,  H01L2924/16151 ,  H01L2924/16152 ,  Y10T29/49005

Abstract: MEMS microphone packages and fabrication methods thereof are disclosed. A MEMS microphone package includes a casing with a conductive part disposed over a substrate, to enclose a cavity. A MEMS acoustic sensing element and an IC chip are disposed inside the cavity. An opening with an acoustic passage connects the cavity to an ambient space. A first ground pad is disposed on a backside of the substrate connecting to the conductive part of the casing through a via hole of the substrate. A second ground pad is disposed on the backside of the substrate connecting to the MEMS acoustic sensing element or the IC chip through an interconnection of the substrate, wherein the first ground pad and the second ground pad are isolated from each other.

Abstract translation: 公开了MEMS麦克风封装及其制造方法。 MEMS麦克风封装包括具有设置在基板上方的导电部分以封闭空腔的壳体。 MEMS声学传感元件和IC芯片设置在腔内。 具有声通道的开口将空腔连接到环境空间。 第一接地焊盘设置在通过基板的通孔连接到壳体的导电部分的基板的背面。 第二接地焊盘通过衬底的互连设置在连接到MEMS声学感测元件或IC芯片的衬底的背面上，其中第一接地焊盘和第二接地焊盘彼此隔离。