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    Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device
    61.
    发明授权
    Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device 有权
    纳米线机电开关器件及其制造方法和使用纳米线机电开关器件的机电存储器件

    公开(公告)号：US08064249B2

    公开(公告)日：2011-11-22

    申请号：US11889515

    申请日：2007-08-14

    Applicant: Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

    Inventor： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

    IPC: G11C11/50

    CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L51/0048 ,  Y10S977/943

    Abstract: A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.

    Abstract translation: 纳米线机电开关器件由源电极和漏电极构成，绝缘基片设置在绝缘基片上并彼此间隔开，第一纳米线在源电极上垂直生长并施加V1电压，第二纳米线垂直生长 并且施加具有与V1电压相反的极性的V2电压的栅极电极和与第二纳米线间隔开的栅电极，部分地围绕第二纳米线并且具有面向第一纳米线的开口 以避免干扰第一纳米线和第二纳米线的相互切换操作，并且施加具有与V2电压相同极性的V3电压。

    Reflective display devices and methods of manufacturing the same
    62.
    发明申请
    Reflective display devices and methods of manufacturing the same 有权
    反射型显示装置及其制造方法

    公开(公告)号：US20110134373A1

    公开(公告)日：2011-06-09

    申请号：US12662573

    申请日：2010-04-23

    Applicant: Joo-young Kim ,  Byong-gwon Song ,  Jae-eun Jang ,  Yong-wan Jin ,  Jung-woo Kim

    Inventor： Joo-young Kim ,  Byong-gwon Song ,  Jae-eun Jang ,  Yong-wan Jin ,  Jung-woo Kim

    IPC: G02F1/1334 ,  H01L33/44

    CPC classification number: G02F1/1334 ,  G02F1/133553 ,  G02F1/134336 ,  G02F1/136227 ,  G02F2001/136222

    Abstract: A reflective display device may include pixels. Each pixel may include sub-pixels. Each sub-pixel may include first and second substrates spaced apart from each other; a driving unit formed on a top surface of the first substrate; a reflective layer, acting as a first electrode to which a voltage is applied by the driving unit, disposed above the driving unit; a second electrode formed on a bottom surface of the second substrate; a color filter layer disposed between the reflective layer and the second electrode; and a polymer dispersed liquid crystal (PDLC) layer. If the color filter layer is formed on the reflective layer; then the PDLC layer may be disposed between the second electrode and color filter layer. If the color filter layer is formed on a bottom surface of the second electrode, then the PDLC layer may be disposed between the reflective layer and color filter layer.

    Abstract translation: 反射式显示装置可以包括像素。 每个像素可以包括子像素。 每个子像素可以包括彼此间隔开的第一和第二基底; 驱动单元，形成在所述第一基板的顶表面上; 反射层，用作设置在驱动单元上方的由驱动单元施加电压的第一电极; 形成在所述第二基板的底面上的第二电极; 布置在所述反射层和所述第二电极之间的滤色器层; 和聚合物分散液晶（PDLC）层。 如果滤色器层形成在反射层上; 则PDLC层可以设置在第二电极和滤色器层之间。 如果滤色器层形成在第二电极的底表面上，则PDLC层可以设置在反射层和滤色器层之间。

    Reflective-type color display devices using polymer dispersed liquid crystals and dyes
    63.
    发明申请
    Reflective-type color display devices using polymer dispersed liquid crystals and dyes 审中-公开
    使用聚合物分散液晶和染料的反光型彩色显示装置

    公开(公告)号：US20100309413A1

    公开(公告)日：2010-12-09

    申请号：US12654711

    申请日：2009-12-30

    Applicant: Jae-eun Jang ,  Seung-nam Cha ,  Jae-eun Jung ,  Yong-wan Jin

    Inventor： Jae-eun Jang ,  Seung-nam Cha ,  Jae-eun Jung ,  Yong-wan Jin

    IPC: G02F1/1334

    CPC classification number: G02F1/1334 ,  G02F1/133514 ,  G02F2202/04

    Abstract: Reflective-type color display devices using polymer dispersed liquid crystals (PDLCs) and dyes are provided, the display devices including a pixel unit having PDLC layers that are disposed between first electrodes and second electrodes. The PDLC layers have different color dyes. The first electrodes are disposed on a first substrate and the second electrodes are disposed on a second substrate, wherein the first and second substrates are apart from each other. The pixel unit includes different color sub pixels.

    Abstract translation: 提供了使用聚合物分散液晶（PDLC）和染料的反射型彩色显示装置，显示装置包括具有设置在第一电极和第二电极之间的PDLC层的像素单元。 PDLC层具有不同的着色染料。 第一电极设置在第一基板上，第二电极设置在第二基板上，其中第一和第二基板彼此分开。 像素单元包括不同的颜色子像素。

    Nanowire electromechanical device and method of fabricating the same
    65.
    发明授权
    Nanowire electromechanical device and method of fabricating the same 失效
    纳米线机电装置及其制造方法

    公开(公告)号：US07719111B2

    公开(公告)日：2010-05-18

    申请号：US11408054

    申请日：2006-04-21

    Applicant: Jae-Eun Jang ,  Seung-Nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

    Inventor： Jae-Eun Jang ,  Seung-Nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

    IPC: H01L21/28

    CPC classification number: B81C1/00111 ,  B81B3/0086 ,  B81B2201/018 ,  H01H1/0094 ,  Y10S977/762 ,  Y10T29/49105

    Abstract: A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.

    Abstract translation: 具有改进结构的纳米线电子机械装置及其制造方法防止由于彼此接触而切换的两个纳米线的燃烧，同时提供稳定的开 - 关开关特性。 纳米线机电装置包括：绝缘基板; 在绝缘基板上彼此间隔开的第一和第三电极，其中在预定范围内变化的负电压和正电压分别施加到第一和第三电极; 插入在第一和第三电极之间的第二电极，施加到第二电极的恒定的正电压低于施加到第三电极的电压; 在第一电极上垂直生长并带有负电荷的第一纳米线; 在第二电极上垂直生长并带有正电荷的第二纳米线; 以及在第三电极上垂直生长的第三纳米线，并充有与施加到第三电极的变化电压的幅度相对应的一定量的正电荷。

    Mechanical memory device and method of manufacturing the same
    66.
    发明授权
    Mechanical memory device and method of manufacturing the same 失效
    机械记忆装置及其制造方法

    公开(公告)号：US07564085B2

    公开(公告)日：2009-07-21

    申请号：US11606966

    申请日：2006-12-01

    Applicant: Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

    Inventor： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

    IPC: H01L27/108 ,  H01L29/08

    CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L27/10805 ,  H01L27/1203 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/86 ,  Y10S977/724 ,  Y10S977/725

    Abstract: A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.

    Abstract translation: 提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。 存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。 在源电极上形成纳米线电容器。 纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。 在漏电极上垂直生长第二纳米线。 漏极布置在源电极和栅电极之间。 当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。 信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。 通过第二纳米线的机械运动来进行记忆装置的读写操作。

    Electron multiplier electrode and terahertz radiation source using the same
    68.
    发明申请
    Electron multiplier electrode and terahertz radiation source using the same 有权
    电子倍增器电极和太赫兹辐射源使用相同

    公开(公告)号：US20080164798A1

    公开(公告)日：2008-07-10

    申请号：US12007186

    申请日：2008-01-08

    Applicant: Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    Inventor： Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    IPC: H01J43/04 ,  G21G4/00

    CPC classification number: H01J43/04

    Abstract: Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

    Abstract translation: 提供了使用二次电子提取电极和使用电子倍增器电极的太赫兹辐射源的电子倍增器电极。 电子倍增器电极包括：阴极; 设置在阴极上并提取电子束的发射器; 用于切换电子束的栅电极，栅电极设置在阴极上以围绕发射极; 以及二次电子提取电极，设置在栅电极上，并且包括由于电子束的碰撞而提取二次电子的二次电子提取层。

    Field emission device and field emission display using the same
    69.
    发明授权
    Field emission device and field emission display using the same 失效
    场发射装置和场发射显示使用相同

    公开(公告)号：US07382090B2

    公开(公告)日：2008-06-03

    申请号：US11130264

    申请日：2005-05-17

    Applicant: Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

    Inventor： Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

    IPC: H01J17/30

    CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J29/481 ,  H01J2201/30469

    Abstract: A field emission device and a field emission display (FED) using the same and a method of making the field emission device. The FED includes a glass substrate, a layer of a material formed on the glass substrate and having a concave portion, a cathode electrode formed on the material layer and also having a concave portion, electron emitters formed on the concave portion of the cathode electrode, a gate insulating layer formed on the cathode electrode and having a cavity communicating with the concave portion, and a gate electrode formed on the gate insulating layer and having a gate aperture aligned with the cavity.

    Abstract translation: 场发射器件和使用其的场致发射显示器（FED）以及制造场致发射器件的方法。 FED包括玻璃基板，形成在玻璃基板上的具有凹部的材料层，形成在材料层上的阴极，还具有凹部，形成在阴极电极的凹部上的电子发射体， 形成在所述阴极电极上且具有与所述凹部连通的空腔的栅极绝缘层，以及形成在所述栅极绝缘层上并具有与所述空腔对准的栅极孔的栅电极。

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