公开(公告)号：US20110042130A1

公开(公告)日：2011-02-24

申请号：US12654529

申请日：2009-12-22

Applicant: Chang Hyun Lim ,  Tae Hoon Kim ,  Young Ki Lee ,  Tae Hyun Kim ,  Ki Ho Seo

Inventor： Chang Hyun Lim ,  Tae Hoon Kim ,  Young Ki Lee ,  Tae Hyun Kim ,  Ki Ho Seo

IPC: H05K1/11 ,  H01K3/10 ,  H05K3/36

CPC classification number: H05K3/4641 ,  H05K1/053 ,  H05K3/445 ,  H05K3/4623 ,  H05K2203/0315 ,  Y10T29/49126 ,  Y10T29/49162

Abstract: A multilayered wiring substrate and a manufacturing method thereof are disclosed. The multilayered wiring substrate includes: a stacked body including an insulating member and first and second metal cores stacked with the insulating member interposed therebetween, and having a through hole penetrating the first and second metal cores; first and second insulation layers formed on an external surface, excluding an inner wall of the through hole, of the first and second metal cores, respectively; first and second inner layer circuit patterns and first and second outer layer circuit patterns formed on the first and second insulation layers, respectively; first and second via electrodes electrically connecting the first and second inner layer circuit patterns and the first and second outer layer circuit patterns; a third insulation layer formed on the inner wall of the through hole; and a through electrode made of a conductive material filled in the through hole and electrically connecting the first and second outer layer circuit patterns.

Abstract translation: 公开了一种多层布线基板及其制造方法。 所述多层布线基板包括：堆叠体，其包括绝缘部件和被插入其间的所述绝缘部件堆叠的第一和第二金属芯体，并且具有穿过所述第一和第二金属芯体的通孔; 第一和第二绝缘层分别形成在第一和第二金属芯的外表面上，不包括通孔的内壁; 分别形成在第一绝缘层和第二绝缘层上的第一和第二内层电路图案和第一和第二外层电路图案; 第一和第二通孔电极，电连接第一和第二内层电路图案以及第一和第二外层电路图案; 形成在所述通孔的内壁上的第三绝缘层; 以及由填充在所述通孔中的导电材料制成的电连接电连接所述第一外层电路图案和所述第二外层电路图案的贯通电极。

公开(公告)号：US07863640B2

公开(公告)日：2011-01-04

申请号：US11710436

申请日：2007-02-26

Applicant: Sang Hyun Shin ,  Seog Moon Choi ,  Young Ki Lee

Inventor： Sang Hyun Shin ,  Seog Moon Choi ,  Young Ki Lee

IPC: H01L23/34 ,  H05K1/14

CPC classification number: H01L33/486 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/01322 ,  H05K1/053 ,  H05K3/0052 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by anodizing on a portion of a thermally conductive board body and plated with a conductive material. In the light emitting diode package, a board body is made of a thermally conductive metal. Insulating oxidation layers are formed at a pair of opposing edges of the board body. First conductive patterns are formed on the insulating oxidation layers, respectively. Also, second conductive patterns are formed in contact with the board body at a predetermined distance from the first conductive patterns, respectively. The light emitting diode package ensures heat generated from the light emitting diode to radiate faster and more effectively. Additionally, the insulating layers are formed integral with the board body by anodizing, thus enhancing productivity and durance.

Abstract translation: 一种用于散热效率提高的发光二极管封装的电路板及其制造方法。 在简单的制造工艺中，通过在导热板本体的一部分上阳极氧化并且电镀导电材料来形成绝缘层。 在发光二极管封装中，板体由导热金属制成。 绝缘氧化层形成在板体的一对相对的边缘处。 分别在绝缘氧化层上形成第一导电图案。 此外，第二导电图案分别形成为与板体相距预定距离与第一导电图案接触。 发光二极管封装确保了发光二极管产生的热量更快更有效地辐射。 此外，绝缘层通过阳极氧化与板体形成一体，从而提高生产率和耐久性。

公开(公告)号：US07730199B2

公开(公告)日：2010-06-01

申请号：US11734399

申请日：2007-04-12

Applicant: June-Hwa Song ,  Seung-Woo Kang ,  Young-Ki Lee ,  Sung-Hwan Ihm ,  Soun-Eil Park ,  Jae-Sun Han ,  Su-Myeon Kim

Inventor： June-Hwa Song ,  Seung-Woo Kang ,  Young-Ki Lee ,  Sung-Hwan Ihm ,  Soun-Eil Park ,  Jae-Sun Han ,  Su-Myeon Kim

IPC: G06F15/16 ,  G06F3/00 ,  G06F9/45 ,  G06F9/44

CPC classification number: G06F17/30516

Abstract: Methods and systems of processing a data stream are disclosed. A developer may develop a service only by programming a Service Unit (SU) including a service logic (SL) and including a Service Unit Description Language (SUDL) file, so that the developer may not need to program complicated stream processing code, such as stream source connection code, network input/output (I/O) code, and buffering code. In addition, the stream source connected dynamically to the service and a service execution mode (such as push and pull modes) may be converted by simply changing setting files based on the service model. The system includes modules for managing and processing the stream in reality, such as stream source connection modules, network I/O processing modules, and stream buffering modules, the modules operating the developed program through the service model.

Abstract translation: 公开了处理数据流的方法和系统。 开发者可以仅通过编程包括服务逻辑（SL）并且包括服务单元描述语言（SUDL）文件的服务单元（SU）来开发服务，使得开发者可能不需要编程复杂的流处理代码，例如 流源连接代码，网络输入/输出（I / O）代码和缓冲代码。 此外，可以通过基于服务模型简单地改变设置文件来转换动态地连接到服务的流源和服务执行模式（例如推拉模式）。 该系统包括用于在现实中管理和处理流的模块，例如流源连接模块，网络I / O处理模块和流缓冲模块，模块通过服务模型运行开发的程序。

公开(公告)号：US20100124071A1

公开(公告)日：2010-05-20

申请号：US12507356

申请日：2009-07-22

Applicant: Young Ki Lee ,  Seog Moon Choi ,  Sang Hyun Shin ,  Shan Gao ,  Jong Woon Kim

Inventor： Young Ki Lee ,  Seog Moon Choi ,  Sang Hyun Shin ,  Shan Gao ,  Jong Woon Kim

IPC: F21V29/00 ,  F28F13/12

CPC classification number: F21V29/63 ,  B61D29/00 ,  F21S41/141 ,  F21S41/143 ,  F21S45/43 ,  F21V29/02 ,  F21W2102/00 ,  F21W2107/10 ,  F21Y2115/10 ,  F28F13/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cooling device for a light emitting device package of a vibration generating machine, includes: a heat releasing plate provided at one side of the light emitting device package; a vibrator disposed to face the heat releasing plate and vibrating to generate an air flow according to vibration of the vibration generating machine; and a vibration transfer unit configured to connect the vibrator and the heat releasing plate to allow the air flow generated from the vibrator to be transferred to the heat releasing plate so as to be cooled.

Abstract translation: 一种用于振动发生机的发光器件封装的冷却装置，包括：设置在发光器件封装的一侧的散热板; 振动器，其设置为面对所述散热板并振动以根据所述振动发生机的振动产生气流; 以及振动传递单元，其构造成将所述振动器和所述散热板连接以允许从所述振动器产生的气流被传递到所述散热板以被冷却。

公开(公告)号：US07625670B2

公开(公告)日：2009-12-01

申请号：US11371595

申请日：2006-03-09

Applicant: Young Ki Lee ,  Dong Hak Kwak ,  Hui Chan Yun ,  Jong Seob Kim

Inventor： Young Ki Lee ,  Dong Hak Kwak ,  Hui Chan Yun ,  Jong Seob Kim

IPC: H01M4/00 ,  H01M4/50 ,  H01M4/58

CPC classification number: H01M4/525 ,  H01M4/0471 ,  H01M4/0497 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/364 ,  H01M4/485 ,  H01M4/505 ,  H01M4/56 ,  H01M10/052 ,  H01M2004/021

Abstract: Provided are a cathode active material for a non-aqueous electrolyte lithium secondary battery, a process for preparing the same and a lithium secondary battery comprising the same. The cathode active material for a non-aqueous electrolyte lithium secondary battery is represented by the formula LiaNi1−(v+w+x+y+z)MnvCowMxM′yM″zO2 wherein M, M′ and M″ are independently selected from the group consisting of Al, Mg, Sr, Ca, P, Pb, Y and Zr, and mixtures thereof, a is in a range of 0.9 to 1.05, 1−(v+w+x+y+z) is in a range of 0.685 to 0.745, v is in a range of 0.05 to 0.06, w is in a range of 0.20 to 0.24, and x+y+z is in a range of 0.005 to 0.015.

Abstract translation: 提供一种用于非水电解质锂二次电池的正极活性材料，其制备方法和包含该二次电池的锂二次电池。 用于非水电解质锂二次电池的阴极活性材料由式LiNi1（v + w + x + y + z）MnvCowMxM'yM''zO2表示，其中M，M'和M“独立地选自 由Al，Mg，Sr，Ca，P，Pb，Y和Zr组成的组及其混合物，a在0.9〜1.05的范围内，1-（v + w + x + y + z） 范围为0.685〜0.745，v为0.05〜0.06的范围，w为0.20〜0.24，x + y + z为0.005〜0.015的范围。

公开(公告)号：US20090267505A1

公开(公告)日：2009-10-29

申请号：US12213241

申请日：2008-06-17

Applicant: Young Ki Lee ,  Seog Moon Choi ,  Hyung Jin Jeon ,  Sang Hyun Shin

Inventor： Young Ki Lee ,  Seog Moon Choi ,  Hyung Jin Jeon ,  Sang Hyun Shin

IPC: H01J1/62 ,  H01L31/00 ,  H01J9/02

CPC classification number: H01L33/486 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/48227

Abstract: The present invention relates to a light emitting device package and a method of manufacturing the same. There is provided a light emitting device package including a metal core; an insulating layer formed on the metal core; a metal layer formed on the insulating layer; a first cavity formed by removing parts of the metal layer and the insulating layer to expose a top surface of the metal core; and a light emitting device directly mounted on the top surface of the metal core in the first cavity and further there is provided a method of manufacturing the light emitting device package.

Abstract translation: 本发明涉及一种发光器件封装及其制造方法。 提供了一种包括金属芯的发光器件封装; 形成在金属芯上的绝缘层; 形成在所述绝缘层上的金属层; 通过去除金属层和绝缘层的部分以暴露金属芯的顶表面而形成的第一腔; 以及直接安装在第一腔中的金属芯的顶表面上的发光器件，并且还提供了制造发光器件封装的方法。

公开(公告)号：US20090095975A1

公开(公告)日：2009-04-16

申请号：US12332678

申请日：2008-12-11

Applicant: Sang Hyun SHIN ,  Seog Moon Choi ,  Young Ki Lee ,  Yong Sik Kim

Inventor： Sang Hyun SHIN ,  Seog Moon Choi ,  Young Ki Lee ,  Yong Sik Kim

IPC: H01L33/00

CPC classification number: H01L33/62 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/26175 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83805 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/157 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

Abstract: A light emitting diode package for preventing an electric short circuit among semiconductor layers and with excellent bonding strength. The light emitting diode package includes a package substrate, a light emitting diode chip bonded to an upper surface of the package substrate, and a bonding material for bonding the light emitting diode chip to the package substrate. The package substrate has a recess formed in a bonding surface thereof to accommodate the bonding material.

Abstract translation: 一种用于防止半导体层之间的电短路并且具有优异的接合强度的发光二极管封装。 发光二极管封装包括封装衬底，结合到封装衬底的上表面的发光二极管芯片，以及用于将发光二极管芯片接合到封装衬底的接合材料。 封装基板具有形成在其接合表面中的凹部以容纳接合材料。

公开(公告)号：US20070246715A1

公开(公告)日：2007-10-25

申请号：US11783948

申请日：2007-04-13

Applicant: Sang Hyun Shin ,  Seog Moon Choi ,  Young Ki Lee

Inventor： Sang Hyun Shin ,  Seog Moon Choi ,  Young Ki Lee

IPC: H01L33/00

CPC classification number: H01L33/483 ,  H01L33/60 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A high luminance and high output LED package using an LED as a light source and a fabrication method thereof. The LED package includes an Al substrate with a recessed multi-stepped reflecting surface formed therein and a light source composed of LEDs mounted on the reflecting surface and electrically connected to patterned electrodes. The LED package also includes anodized insulation layers formed between the patterned electrodes and the substrate, and an encapsulant covering over the light source of the substrate. The LED package further includes an Al heat radiator formed under the LEDs to enhance heat radiation capacity. According to the present invention, the substrate is made of Al material and anodized to form insulation layers thereon, allowing superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED package.

Abstract translation: 使用LED作为光源的高亮度和高输出LED封装及其制造方法。 LED封装包括Al基板，其中形成有凹入的多阶反射表面，以及由安装在反射表面上并与图案化电极电连接的LED组成的光源。 LED封装还包括形成在图案化电极和衬底之间的阳极氧化绝缘层，以及覆盖在衬底的光源上的密封剂。 LED封装还包括形成在LED下面的Al散热器，以增强散热能力。 根据本发明，基板由Al材料制成并阳极氧化以在其上形成绝缘层，从而允许LED的良好的散热效果，从而显着提高LED封装的寿命和发光效率。

公开(公告)号：US20070201213A1

公开(公告)日：2007-08-30

申请号：US11710436

申请日：2007-02-26

Applicant: Sang Hyun Shin ,  Seog Moon Choi ,  Young Ki Lee

Inventor： Sang Hyun Shin ,  Seog Moon Choi ,  Young Ki Lee

IPC: H05K1/14

CPC classification number: H01L33/486 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/01322 ,  H05K1/053 ,  H05K3/0052 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by anodizing on a portion of a thermally conductive board body and plated with a conductive material. In the light emitting diode package, a board body is made of a thermally conductive metal. Insulating oxidation layers are formed at a pair of opposing edges of the board body. First conductive patterns are formed on the insulating oxidation layers, respectively. Also, second conductive patterns are formed in contact with the board body at a predetermined distance from the first conductive patterns, respectively. The light emitting diode package ensures heat generated from the light emitting diode to radiate faster and more effectively. Additionally, the insulating layers are formed integral with the board body by anodizing, thus enhancing productivity and durance.

Abstract translation: 一种用于散热效率提高的发光二极管封装的电路板及其制造方法。 在简单的制造工艺中，通过在导热板本体的一部分上阳极氧化并且电镀导电材料来形成绝缘层。 在发光二极管封装中，板体由导热金属制成。 绝缘氧化层形成在板体的一对相对的边缘处。 分别在绝缘氧化层上形成第一导电图案。 此外，第二导电图案分别形成为与板体相距预定距离与第一导电图案接触。 发光二极管封装确保了发光二极管产生的热量更快更有效地辐射。 此外，绝缘层通过阳极氧化与板体形成一体，从而提高生产率和耐久性。

公开(公告)号：US20070170501A1

公开(公告)日：2007-07-26

申请号：US11693317

申请日：2007-03-29

Applicant: Young-Ki Lee ,  Heon-Jong Shin ,  Hwa-Sook Shin

Inventor： Young-Ki Lee ,  Heon-Jong Shin ,  Hwa-Sook Shin

IPC: H01L29/76 ,  H01L29/94

CPC classification number: H01L29/6653 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

Abstract: A MOS transistor can include a substrate and a field region formed at the semiconductor substrate to define an active region. An I-shaped spacer is on sidewalls of the gate electrode. A lightly doped region and a heavily doped region are on the semiconductor substrate on sides of the gate electrode. A first silicide layer is on a surface of the heavily doped region and a second silicide layer is on the lightly doped region between the I-shaped spacer and the first silicide layer.

Abstract translation: MOS晶体管可以包括形成在半导体衬底上的衬底和场区，以限定有源区。 I形间隔物位于栅电极的侧壁上。 轻掺杂区域和重掺杂区域位于栅电极侧的半导体衬底上。 第一硅化物层在重掺杂区域的表面上，第二硅化物层位于I形间隔物和第一硅化物层之间的轻掺杂区域上。