公开(公告)号：US20250112090A1

公开(公告)日：2025-04-03

申请号：US18979075

申请日：2024-12-12

Applicant: Applied Materials, Inc.

Inventor： Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi ,  Xianmin Tang ,  Wenjing Xu ,  Lu Chen ,  Tae Hong Ha

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US11948836B2

公开(公告)日：2024-04-02

申请号：US17498247

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/76831 ,  H01L21/76837 ,  H01L21/76876 ,  H01L21/76877

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US11776805B2

公开(公告)日：2023-10-03

申请号：US17197475

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Yi Xu ,  Yu Lei ,  Xianmin Tang ,  Kelvin Chan ,  Alexander Jansen ,  Philip A. Kraus

IPC: H01L21/02 ,  H01L21/30

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/3003

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.

公开(公告)号：US20230072614A1

公开(公告)日：2023-03-09

申请号：US17466732

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi ,  Xianmin Tang

IPC: H01L21/768

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US11562925B2

公开(公告)日：2023-01-24

申请号：US17036038

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Shirish Pethe ,  Fuhong Zhang ,  Joung Joo Lee ,  Rui Li ,  Xiangjin Xie ,  Xianmin Tang

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US20220415636A1

公开(公告)日：2022-12-29

申请号：US17362925

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D. Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC: H01J37/34 ,  C23C14/56 ,  C23C14/54 ,  H01J37/32

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

公开(公告)号：US11289329B2

公开(公告)日：2022-03-29

申请号：US16752630

申请日：2020-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Rui Li ,  Xiangjin Xie ,  Fuhong Zhang ,  Shirish Pethe ,  Adolph Allen ,  Lanlan Zhong ,  Xianmin Tang

IPC: H01L21/02 ,  H01L21/768 ,  C23C14/34 ,  C23C18/38

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

公开(公告)号：US20210366722A1

公开(公告)日：2021-11-25

申请号：US16881145

申请日：2020-05-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US20210351072A1

公开(公告)日：2021-11-11

申请号：US16867990

申请日：2020-05-06

Applicant: Applied Materials, Inc.

Inventor： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L21/768

Abstract: Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US11171045B2

公开(公告)日：2021-11-09

申请号：US16401133

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L21/768 ,  H01L21/02

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.