-
公开(公告)号：US06809793B1
公开(公告)日：2004-10-26
申请号：US10050456
申请日：2002-01-16
IPC分类号： G03B2752
CPC分类号： G03F7/70558 , G03F7/70875
摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.
摘要翻译： 公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。 一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。 所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。
-
公开(公告)号：US06774989B1
公开(公告)日：2004-08-10
申请号：US10050453
申请日：2002-01-16
IPC分类号： G01N2100
CPC分类号： G01N21/956 , G01N21/47
摘要： A system for detecting voids in an ILD layer is provided. The system includes one or more light sources, each light source directing light to respective portions of the ILD layer. Light reflected from the respective portions is collected by a measuring system that processes the collected light. The collected light is indicative of the presence of voids in the respective portions of the ILD layer. The measuring system provides ILD layer void related data to a processor that determines whether voids exist in the respective portions of the ILD layer. The processor selectively marks the ILD layer portions to facilitate further processing and/or destruction of the IC with the ILD layer voids.
摘要翻译： 提供一种用于检测ILD层中的空隙的系统。 该系统包括一个或多个光源，每个光源将光引导到ILD层的相应部分。 通过处理收集的光的测量系统收集从各个部分反射的光。 收集的光指示在ILD层的各个部分中存在空隙。 测量系统向处理器提供ILD层空隙相关数据，该处理器确定在ILD层的相应部分中是否存在空隙。 处理器选择性地标记ILD层部分以促进具有ILD层空隙的IC的进一步处理和/或破坏。
-
公开(公告)号：US06771374B1
公开(公告)日：2004-08-03
申请号：US10050758
申请日：2002-01-16
IPC分类号： G01N2155
CPC分类号： G01N21/211 , G01B11/0675 , G01N21/4738 , G01N21/9501 , Y10T428/21
摘要： A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.
摘要翻译： 公开了一种用于监测旋转衬底的特性的系统和方法。 当衬底在环境中旋转时，入射光束在衬底旋转的轴附近被发射到衬底上。 入射光束的发射被控制为衬底的角度取向的函数，使得入射光束选择性地询问衬底的中心区域以便于测量和/或检查衬底的特性。
-
公开(公告)号：US06649426B2
公开(公告)日：2003-11-18
申请号：US09893824
申请日：2001-06-28
IPC分类号： G01R3126
摘要： The present invention relates to systems and methods to regulate spacer deposition. The present invention employs a spacer deposition controller to control a spacer deposition component that deposits a spacer on a portion of a wafer. During and/or after spacer deposition, light can be directed at the spacer, wherein light reflected from the spacer is measured to determine parameters associated with the spacer deposition process. A processor operatively coupled to a measurement system and the spacer deposition controller utilizes the parameters to determine if the spacer process is proceeding in a suitable manner via comparing the measured parameters with stored acceptable parameters. If it is determined that the spacer deposition process is not proceeding as desired, then the measured parameters can be employed by the spacer deposition controller to adjust the spacer deposition process on the portion of the wafer and on subsequent portions of wafers.
摘要翻译： 本发明涉及调节间隔物沉积的系统和方法。 本发明使用间隔物沉积控制器来控制将间隔物沉积在晶片的一部分上的间隔物沉积组分。 在间隔物沉积期间和/或之后，可以将光引向间隔物，其中测量从间隔物反射的光以确定与间隔物沉积过程相关的参数。 可操作地耦合到测量系统的处理器和间隔物沉积控制器利用参数来确定间隔物过程是否以适当的方式通过将测量的参数与存储的可接受参数进行比较来进行。 如果确定间隔物沉积过程没有按需要进行，则可以通过间隔物沉积控制器来采用测量的参数来调整晶片部分和晶片的后续部分上的间隔物沉积过程。
-
65.发明授权Wafer based temperature sensors for characterizing chemical mechanical polishing processes 有权用于表征化学机械抛光工艺的基于晶圆的温度传感器公开(公告)号：US06562185B2
公开(公告)日：2003-05-13
申请号：US09955552
申请日：2001-09-18
IPC分类号： B24B3700
CPC分类号： B24B37/015
摘要： A system for characterizing a chemical mechanical polishing process is provided. The system includes a wafer that has a metal, polysilicon, and/or dielectric layer and/or substrate and a temperature sensor located in and/or on the metal, polysilicon and/or dielectric layer and/or substrate. The system also includes a temperature monitoring system that can read the wafer temperature from the temperature sensors and that can analyze the wafer temperature to characterize the chemical mechanical polishing process. Such characterization includes producing information concerning relationships between wafer temperature and polishing rate, polishing uniformity and introduction of defects during polishing. Such relationships are correlated with wafer temperature as related to parameters like polishing time, pressure, speed, slurry properties and wafer/metal layer properties. Such characterization can be employed, for example, to better understand a CMP process, to facilitate initializing subsequent chemical mechanical polishing processes and/or apparatus and/or to control such chemical mechanical polishing processes and/or apparatus by monitoring and/or controlling wafer temperature.
摘要翻译： 提供了表征化学机械抛光工艺的系统。 该系统包括具有位于金属，多晶硅和/或电介质层和/或衬底中和/或上的金属，多晶硅和/或电介质层和/或衬底和温度传感器的晶片。 该系统还包括一个温度监控系统，可以从温度传感器读取晶圆温度，并且可以分析晶圆温度以表征化学机械抛光过程。 这种表征包括产生关于晶片温度和抛光速率之间的关系的信息，抛光均匀性和在抛光期间引入缺陷。 这些关系与晶片温度相关，如与抛光时间，压力，速度，浆料性质和晶片/金属层性质等参数相关。 可以采用这种表征，例如，更好地理解CMP工艺，以便于初始化随后的化学机械抛光工艺和/或设备和/或通过监测和/或控制晶片温度来控制这种化学机械抛光工艺和/或设备 。
-
66.发明授权公开(公告)号：US06507474B1
公开(公告)日：2003-01-14
申请号：US09597126
申请日：2000-06-19
IPC分类号： H01T2300
CPC分类号： G03F7/70616 , G03F7/70941
摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.
摘要翻译： 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。
-
公开(公告)号：US06486072B1
公开(公告)日：2002-11-26
申请号：US09709974
申请日：2000-11-10
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： H01L21302
CPC分类号： H01L21/02046
摘要： A system and method are disclosed for facilitating removal of a defect from a substrate. A charge is applied at the surface of substrate, such as in the form of an ionized gas, to weaken attractive forces between the defect and the substrate. As a result of weakening the attractive forces, a suitable defect removal system may be employed to remove the defect.
摘要翻译： 公开了一种用于便于从基底去除缺陷的系统和方法。 在基板的表面，例如以电离气体的形式施加电荷，以减弱缺陷和基板之间的吸引力。 作为吸引力减弱的结果，可以采用合适的缺陷去除系统来去除缺陷。
-
68.发明授权Conducting electron beam resist thin film layer for patterning of mask plates 失效用于掩模板图形化的导电电子束抗蚀剂薄膜层公开(公告)号：US06482558B1
公开(公告)日：2002-11-19
申请号：US09782382
申请日：2001-02-12
IPC分类号： G03F900
CPC分类号： G03F7/093 , G03F1/40 , G03F1/50 , Y10S430/143
摘要： One aspect of the present invention relates to a system for dissipating electrostatic charge on a mask plate structure containing the mask plate structure containing a substrate, a chromium layer over the substrate, and a conductive polymer over the chromium layer; a conductive structure coupled to the mask plate structure which allows accumulated electrostatic charge to flow from the mask plate structure; a conductive path between the conductive structure and a ground, wherein the conductive path inacludes a switch controlled by a controller; and a detector coupled to the controller for signaling the controller when the accumulation of electrostatic charge is detected. Another aspect of the present invention relates to a method for dissipating charge accumulation during patterning of mask plates using a conductive polymer layer involving the steps of providing a mask substrate having a chromium layer; depositing a conductive polymer layer over the chromium layer; connecting a conductive structure to the mask substrate; irradiating portions of the mask substrate with an electron beam; detecting whether electrostatic charge exists on the mask substrate; and if electrostatic charge is detected, closing a circuit whereby the conductive structure is grounded to permit a flow of electrostatic charge from the mask substrate to the ground.
摘要翻译： 本发明的一个方面涉及一种用于在掩模板结构上耗散静电电荷的系统，该系统包含含有衬底的掩模板结构，在衬底上的铬层和在铬层上的导电聚合物; 耦合到掩模板结构的导电结构，其允许积聚的静电电荷从掩模板结构流动; 导电结构和地之间的导电路径，其中导电路径不允许由控制器控制的开关; 以及耦合到控制器的检测器，用于在检测到静电电荷的累积时用于发信号通知控制器。 本发明的另一方面涉及一种使用导电聚合物层在掩模板图案化期间耗散电荷累积的方法，包括以下步骤：提供具有铬层的掩模基板; 在所述铬层上沉积导电聚合物层; 将导电结构连接到所述掩模基板; 用电子束照射掩模基板的部分; 检测在掩模基板上是否存在静电电荷; 并且如果检测到静电电荷，则关闭电路，由此导电结构接地以允许静电电荷从掩模基板流到地面。
-
公开(公告)号：US06444373B1
公开(公告)日：2002-09-03
申请号：US09596954
申请日：2000-06-16
IPC分类号： G03F900
CPC分类号： G03F1/70 , G03F7/70433 , G03F7/70441
摘要： The present invention relates to a system and method of modifying mask layout data to improve the fidelity of mask manufacture. The system and method include determining the difference between the mask layout design and the mask features as written, and generating sizing corrections. The sizing corrections can be used to modify the mask layout data, and/or stored in a database.
摘要翻译： 本发明涉及一种修改掩模布局数据以提高掩模制造的保真度的系统和方法。 该系统和方法包括确定掩模布局设计和掩模特征之间的写入差异，并产生尺寸校正。 尺寸校正可用于修改掩模布局数据和/或存储在数据库中。
-
70.发明授权公开(公告)号：US06416933B1
公开(公告)日：2002-07-09
申请号：US09283889
申请日：1999-04-01
申请人： Bhanwar Singh , Bharath Rangarajan , Wenge Yang
发明人： Bhanwar Singh , Bharath Rangarajan , Wenge Yang
IPC分类号： G03C500
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/312
摘要： The present invention relates to a method for forming an etch mask. A photoresist layer is patterned, wherein d1 is a smallest space dimension of an exposed area of a layer underlying the photoresist layer. A polymer layer is formed to be conformal to the patterned photoresist layer and exposed portions of the underlayer. The polymer layer is etched to form polymer sidewalls, the polymer sidewalls reducing the smallest space dimension of the exposed underlayer area to d2, wherein d2
摘要翻译： 本发明涉及一种形成蚀刻掩模的方法。 图案化光致抗蚀剂层，其中d1是光致抗蚀剂层下面的层的暴露区域的最小空间尺寸。 聚合物层被形成为与图案化的光致抗蚀剂层和底层的暴露部分共形。 蚀刻聚合物层以形成聚合物侧壁，聚合物侧壁将暴露的底层区域的最小空间尺寸减小到d2，其中d2
-
-
-
-
-
-
-
-
-
搜索结果
268 条记录 (耗时 0.029 秒)
