公开(公告)号：US20120021138A1

公开(公告)日：2012-01-26

申请号：US13235909

申请日：2011-09-19

申请人： Robert Anthony Ditizio ,  Tue Nguyen ,  Tai Dung Nguyen

发明人： Robert Anthony Ditizio ,  Tue Nguyen ,  Tai Dung Nguyen

IPC分类号： H05H1/24

CPC分类号： C23C16/56 ,  C23C16/409 ,  C23C16/45531 ,  C23C16/45536

摘要： A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.

摘要翻译： 提供了用于沉积三次，四元，五元和六元化学计量薄膜的复合膜的纳米层沉积（NLD）沉积方法。 本发明的沉积工艺是由一系列薄膜沉积和处理步骤组成的循环工艺，以获得所需的膜化学计量。 沉积步骤不是像在原子层沉积中那样自限制的。 在用于沉积复合氧化物膜的一个实施方案中，沉积工艺包括第一沉积，随后是含氢等离子体处理，第二次沉积，然后进行含氢等离子体处理，然后进行第三次沉积，然后是含氢 然后进行含氧等离子体处理以产生化学计量的四元膜。 重复循环过程，直到达到所需的总膜厚度。 本发明的方法用于制造高k电介质膜，铁电体膜，压电膜和其它复合氧化物。

公开(公告)号：US20100190353A1

公开(公告)日：2010-07-29

申请号：US12732825

申请日：2010-03-26

申请人： Tue Nguyen ,  Tai Dung Nguyen

发明人： Tue Nguyen ,  Tai Dung Nguyen

IPC分类号： H01L21/461

CPC分类号： C23C16/45525 ,  C23C16/56

摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

摘要翻译： 提供了称为NanoLayer沉积（NLD）的CVD和ALD的混合沉积工艺。 纳米层沉积工艺是循环顺序沉积工艺，包括引入第一多个前体以沉积薄膜而不是自限制的沉积工艺的第一步骤，然后第二步骤是清洗第一组前体和第三步 引入第二多个前体以修饰沉积的薄膜的步骤。 使用第一组前体的NLD工艺中的沉积步骤不是自限制的，并且是衬底温度和处理时间的函数。 第二组前体改变已沉积的膜特性。 第二组前体可以处理沉积的膜，例如膜组成的改变，掺杂或从沉积膜去除杂质。 第二组前体也可以在沉积膜上沉积另一层。 附加层可以与现有层反应以形成化合物层，或者可以具有最小的反应以形成纳米层间膜。

公开(公告)号：US20070251451A1

公开(公告)日：2007-11-01

申请号：US11739637

申请日：2007-04-24

申请人： Tue Nguyen ,  Tai Nguyen

发明人： Tue Nguyen ,  Tai Nguyen

IPC分类号： C23C16/00

CPC分类号： C23C16/56 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45542 ,  C23C16/507

摘要： A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.

摘要翻译： 通过化学气相沉积沉积薄膜的方法包括抽空气体室; 将装置暴露于气态第一反应物，其中所述第一反应物沉积在所述装置上以形成具有多个单层厚度的薄膜; 排空气体室; 在等离子体处理下将涂覆有第一反应物的装置暴露于气态第二反应物，其中薄膜由第一反应物处理; 并重复前面的步骤。

公开(公告)号：US07087522B2

公开(公告)日：2006-08-08

申请号：US10795950

申请日：2004-03-08

申请人： Tue Nguyen

发明人： Tue Nguyen

IPC分类号： H01L21/44

CPC分类号： H01L21/76862 ,  H01L21/28562 ,  H01L21/76886 ,  H01L2221/1078

摘要： A multilayer copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayer copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayer copper structure.

摘要翻译： 已经提供了一种多层铜结构，用于在集成电路基板中提高铜对诸如TiN的扩散阻挡材料的粘合性。 多层铜结构包括薄的高电阻铜层，以提供对下面的扩散阻挡层的改进的粘合性，以及低电阻铜层以最小的电阻承载电流。 本发明还提供了形成多层铜结构的方法。

公开(公告)号：US07049549B2

公开(公告)日：2006-05-23

申请号：US10894663

申请日：2004-07-20

申请人： Tue Nguyen ,  Craig Alan Bercaw

发明人： Tue Nguyen ,  Craig Alan Bercaw

IPC分类号： F27B5/14

CPC分类号： H01L21/67103 ,  C23C16/4585 ,  C23C16/481

摘要： A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding the substrate, and due to the low thermal transmittivity property, there is minimal heat loss of the heated substrate, resulting in a more uniform temperature profile and a more uniform film deposition. A zone of high thermal transmittivity is in the rest of the shield, allowing thermal energy from the heated substrate to transmit through, resulting in a cooler shield and minimal deposition on the shield.

摘要翻译： 部分覆盖基板并且具有两个不同热性质的区域的沉积屏蔽可以在屏蔽上提供最小的沉积，同时由于基板接触而具有最小的热损失。 低热透射率的区域是屏蔽基板的接触，并且由于低的透热性，加热的基板的热损失最小，导致更均匀的温度分布和更均匀的薄膜沉积。 高透光率区域位于屏蔽层的其余部分，允许来自被加热基板的热能透过，从而形成较冷的屏蔽层，并在屏蔽层上形成最小的沉积。

公开(公告)号：US06946178B2

公开(公告)日：2005-09-20

申请号：US10444219

申请日：2003-05-23

申请人： James Sheats ,  Tue Nguyen

发明人： James Sheats ,  Tue Nguyen

IPC分类号： B32B7/06 ,  B32B43/00 ,  B41M5/40 ,  B41M5/41 ,  B41M5/42 ,  B41M5/44 ,  H01L21/68 ,  H01L51/40 ,  B32B9/00

CPC分类号： B32B7/06 ,  B32B27/08 ,  B32B27/365 ,  B32B43/006 ,  B32B2307/412 ,  B41M5/41 ,  B41M5/42 ,  B41M5/44 ,  H01L21/6835 ,  H01L51/0024 ,  H01L2221/68359 ,  H01L2924/19041 ,  Y10S428/913 ,  Y10T428/14 ,  Y10T428/1452 ,  Y10T428/1481 ,  Y10T428/24843 ,  Y10T428/2874 ,  Y10T428/2878

摘要： This invention discloses a releasable adhesion layer having good adhesion during high temperature fabrication process in the absence of light, and delaminating at a lower temperature in the presence of light. One embodiment of this invention is a film of polymer whose thermal decomposition temperature changes drastically upon photoexposure. These materials, prior to photoexposure, can withstand temperatures in the range of approximately 200° C. to 300° C. without decomposition, yet decompose at around 100° C. with photoexposure. The releasable adhesion layer can be used in a thermal transfer element, sandwiching a donor substrate and a transfer layer having a plurality of multicomponent transfer units. In the absence of light, the releasable adhesion layer can sustain high temperature processing of these multicomponent transfer units. By photoexposing according to a pattern, the photoexposed multicomponent transfer units can be selectively released at a low temperature to transfer to a receptor.

摘要翻译： 本发明公开了一种在不存在光的情况下在高温制造过程中具有良好粘附性的可剥离粘合层，并且在光存在下在较低温度下分层。 本发明的一个实施方案是在曝光时其热分解温度急剧变化的聚合物膜。 这些材料在曝光之前可以承受大约200℃至300℃范围内的温度，而不会分解，而在约100摄氏度的光照下分解。 可剥离粘合层可以用于热转印元件，夹持施主衬底和具有多个多组分转印单元的转印层。 在不存在光的情况下，可释放粘合层可以承受这些多组分转印单元的高温处理。 通过根据图案光固化，可以在低温下选择性地释放光引发的多组分转移单元以转移到受体。

公开(公告)号：US06859262B2

公开(公告)日：2005-02-22

申请号：US09730690

申请日：2000-12-06

申请人： Tue Nguyen

发明人： Tue Nguyen

IPC分类号： G21K1/06 ,  G03B27/54

CPC分类号： G21K1/06

摘要： A system delivers radiation to a substrate with a radiation source to generate radiation having a source intensity distribution pattern; and a redistribution radiation guide adapted to receive the radiation from the radiation source and to direct the radiation from one region to different regions on the substrate so that the substrate intensity distribution pattern is different from the source pattern.

摘要翻译： 系统通过辐射源将辐射传送到衬底以产生具有源强度分布图案的辐射; 以及再分布辐射导管，其适于接收来自辐射源的辐射并且将辐射从一个区域引导到衬底上的不同区域，使得衬底强度分布图案与源图案不同。

公开(公告)号：US06777331B2

公开(公告)日：2004-08-17

申请号：US10225920

申请日：2002-08-23

申请人： Tue Nguyen

发明人： Tue Nguyen

IPC分类号： H01L2144

CPC分类号： H01L21/76862 ,  H01L21/28562 ,  H01L21/76886 ,  H01L2221/1078

摘要： A multilayered copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayered copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayered copper structure.

摘要翻译： 提供了一种多层铜结构，用于在集成电路基板中提高铜对诸如TiN的扩散阻挡材料的粘合性。 多层铜结构包括薄的高电阻铜层，以提供对下面的扩散阻挡层的改进的粘合性，以及低电阻铜层以最小的电阻承载电流。 本发明还提供了一种形成多层铜结构的方法。

公开(公告)号：US06689220B1

公开(公告)日：2004-02-10

申请号：US09721162

申请日：2000-11-22

申请人： Tue Nguyen

发明人： Tue Nguyen

IPC分类号： C23C1600

CPC分类号： C23C16/45538 ,  C23C16/515 ,  H01L21/28562

摘要： A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.

摘要翻译： 公开了一种用于在工件上沉积高度受控层状膜的工艺系统和沉积方法。 本发明装置的基本部件是能够激发或不激发第一前体的脉冲等离子体源。 脉冲等离子体源包括产生等离子体的能量源和等离子体调节系统，以使等离子体激发或不激发前体。 前体可以连续流动（ALD全新的一个方面），或间歇地（或脉冲的标准ALD操作过程）。 本发明还提供了一种在工件上沉积高度受控层状膜的方法。 该方法包括脉冲等离子体以激发/不激发前体和环境以沉积和改变沉积层的步骤。 然后可以交替地重复该过程，直到膜达到期望的厚度。

公开(公告)号：US06670266B2

公开(公告)日：2003-12-30

申请号：US10292929

申请日：2002-11-13

申请人： Tue Nguyen ,  Tai Dung Nguyen

发明人： Tue Nguyen ,  Tai Dung Nguyen

IPC分类号： H01L214763

CPC分类号： H01L21/76888 ,  H01L21/76846 ,  H01L21/76856

摘要： A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.

摘要翻译： 已经提供了一种用于提高铜在集成电路基板中与氮化金属扩散阻挡材料（例如TiN）的粘附性的方法。 该方法提供了多层扩散阻挡结构，其包括在选定位置的导电扩散阻挡层和不良导电的粘附促进剂层。 在选择的位置形成不良导电的粘合促进剂层可以优化接触电阻和粘附性。 不良导电的粘合促进剂层通过将氧部分掺入扩散阻挡层或通过在氧气氛中沉积而形成。