摘要:
Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
摘要:
A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
摘要:
A method for improving the adhesion of an impermeable film on a porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped molecules such as water, alcohol, HCl, and HF vapor, inside the pores of the porous low-k dielectric film. The method also provides an in-situ deposition step of the impermeable film right after the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules. The method further provides an in-situ deposition step of the impermeable film right after the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules. By the removal of all trapped molecules inside the porous low-k dielectric film, the adhesion between the deposited impermeable film and the low-k dielectric film is improved. This method is applicable to many porous low-k dielectric films such as porous hydrosilsesquioxane or porous methyl silsesquioxane, porous silica structures such as aerogel, low temperature deposited silicon carbon films, low temperature deposited Si—O—C films, and methyl doped porous silica.
摘要:
Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
摘要:
Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
摘要:
An apparatus and method for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from a fist compartment to a second compartment by rotating the workpiece on a workpiece mover through an internal pathway. The transfer mechanism comprises two doors coupled to the workpiece mover to seal the internal pathway between the first and second compartments so that the two compartments are isolated and the workpiece can be processed sequentially and in isolation. The apparatus further comprises components to enable the processing of a workpiece. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer by rotating the workpiece on the workpiece mover to the second compartment for further processing. The workpiece can then be transferred once again to the first compartment for further processing, and again to the second compartment, repeating the processing and transferring steps until a desired thin film is achieved.
摘要:
An apparatus and method for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from a fist compartment to a second compartment by rotating the workpiece on a workpiece mover through an internal pathway. The transfer mechanism comprises two doors coupled to the workpiece mover to seal the internal pathway between the first and second compartments so that the two compartments are isolated and the workpiece can be processed sequentially and in isolation. The apparatus further comprises components to enable the processing of a workpiece. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer by rotating the workpiece on the workpiece mover to the second compartment for further processing. The workpiece can then be transferred once again to the first compartment for further processing, and again to the second compartment, repeating the processing and transferring steps until a desired thin film is achieved.
摘要:
An apparatus for dispensing large thermoplastic bags utilizing a relatively compact dispensing container. The preferred embodiment of the present invention as implemented teaches a system for dispensing bags, wherein the container is configured to dispense a laterally folded bag stack, reducing the length of the container. The present invention provides a compact, manageable, and more convenient system for dispensing compact bags and the like, resulting in overall cost and time savings. The container of the present invention has formed therein a removable dispenser door, configured for providing convenient access to the bags, while encouraging communication of the bag being dispensed with the container in such a matter as to open the bag during the dispensing operation.
摘要:
A random number generator is described. The output of two relatively fast digitally controlled oscillators are exclusively ORed and gated by a counter which has a counting rate determined by a relatively slow digitally controlled oscillator. The ORed output is accumulated in the accumulator. During the inactive period of the ORed gate, the counter is preset to a value which is a function of the digital value stored in the accumulator. Further, during this inactive period, selected output lines of the accumulator are also exclusively ORed and gated to shift the accumulated value. The final value of the accumulator is generated as a random number and further provides a seed number for varying the frequency of the two relatively fast oscillators which then provide the foundation for the next random number.