公开(公告)号：US07998356B2

公开(公告)日：2011-08-16

申请号：US12015338

申请日：2008-01-16

申请人： Francesco Martini ,  Daniela Barge ,  Ubaldo Mastromatteo

发明人： Francesco Martini ,  Daniela Barge ,  Ubaldo Mastromatteo

IPC分类号： B29D11/00

CPC分类号： B29D11/00673 ,  G02B6/1221 ,  G02B6/4214

摘要： The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.

摘要翻译： 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构，该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽，所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口，以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻，以从所述暴露的二氧化硅开始，从所述多层结构二氧化硅移除所述多层结构，直到在所述多层结构中形成具有第一壁的凹部，所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸，并且包括入口/出口。

公开(公告)号：US07906321B2

公开(公告)日：2011-03-15

申请号：US11009171

申请日：2004-12-10

申请人： Ubaldo Mastromatteo ,  Flavio Villa ,  Gabriele Barlocchi

发明人： Ubaldo Mastromatteo ,  Flavio Villa ,  Gabriele Barlocchi

IPC分类号： C12M1/34 ,  C12M3/00

CPC分类号： G01N21/6428 ,  B01J19/0093 ,  B01J2219/0097 ,  B01L3/502707 ,  B01L3/502715 ,  B01L7/52 ,  B01L2200/12 ,  B01L2300/0654 ,  B01L2300/0816 ,  G01N21/6454

摘要： An integrated semiconductor chemical microreactor for real-time polymerase chain reaction (PCR) monitoring, has a monolithic body of semiconductor material; a number of buried channels formed in the monolithic body; an inlet trench and an outlet trench for each buried channel; and a monitoring trench for each buried channel, extending between the inlet and outlet trenches thereof from the top surface of the monolithic body to the respective buried channel. Real-time PCR monitoring is carried out by channeling light beams into the buried channels, possibly through one of the inlet or outlet trenches, whereby the light beams impinge on the fluid therein and collecting the emergent light coming out from the monitoring trench.

摘要翻译： 一种用于实时聚合酶链反应（PCR）监测的集成半导体化学微反应器，具有半导体材料的整体; 形成在整体式主体中的多个埋入通道; 每个掩埋通道的入口沟槽和出口沟槽; 以及用于每个掩埋通道的监测沟槽，其在其入口和出口沟槽之间从单体主体的顶表面延伸到相应的掩埋通道。 通过将光束通过入口或出口沟槽中的一个引入到掩埋通道中，从而使光束照射在其中的流体并收集从监测沟槽出来的出射光，从而进行实时PCR监测。

公开(公告)号：US20090308839A1

公开(公告)日：2009-12-17

申请号：US12015338

申请日：2008-01-16

申请人： Francesco Martini ,  Daniela Barge ,  Ubaldo Mastromatteo

发明人： Francesco Martini ,  Daniela Barge ,  Ubaldo Mastromatteo

IPC分类号： B29D11/00

CPC分类号： B29D11/00673 ,  G02B6/1221 ,  G02B6/4214

摘要： The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.

摘要翻译： 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构，该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽，所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口，以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻，以从所述暴露的二氧化硅开始，从所述多层结构二氧化硅移除所述多层结构，直到在所述多层结构中形成具有第一壁的凹部，所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸，并且包括入口/出口。

公开(公告)号：US07595223B2

公开(公告)日：2009-09-29

申请号：US11766654

申请日：2007-06-21

申请人： Ubaldo Mastromatteo ,  Mauro Bombonati ,  Daniela Morin ,  Marta Mottura ,  Mauro Marchi

发明人： Ubaldo Mastromatteo ,  Mauro Bombonati ,  Daniela Morin ,  Marta Mottura ,  Mauro Marchi

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/46

CPC分类号： B81C1/00269 ,  H01L21/185 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/10126 ,  H01L2224/10135 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13164 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/812 ,  H01L2224/81201 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/013

摘要： A process for bonding two distinct substrates that integrate microsystems, including the steps of forming micro-integrated devices in at least one of two substrates using micro-electronic processing techniques and bonding the substrates. Bonding is performed by forming on a first substrate bonding regions of deformable material and pressing the substrates one against another so as to deform the bonding regions and to cause them to react chemically with the second substrate. The bonding regions are preferably formed by a thick layer of a material chosen from among aluminum, copper and nickel, covered by a thin layer of a material chosen from between palladium and platinum. Spacing regions ensure exact spacing between the two wafers.

摘要翻译： 一种用于结合集成微系统的两个不同基板的方法，包括使用微电子处理技术和粘合基板在两个基板中的至少一个中形成微集成器件的步骤。 通过在第一基板上形成接合可变形材料的区域并将基板压在另一个上以使接合区域变形并使其与第二基板发生化学反应来进行接合。 接合区域优选由选自铝，铜和镍的材料的厚层形成，被选自钯和铂之间的材料的薄层覆盖。 间隔区确保两个晶片之间的精确间距。

公开(公告)号：US07578196B2

公开(公告)日：2009-08-25

申请号：US12018068

申请日：2008-01-22

申请人： Giulio Riccoti ,  Marco Morelli ,  Luigi Della Torre ,  Andrea Lorenzo Vitali ,  Ubaldo Mastromatteo

发明人： Giulio Riccoti ,  Marco Morelli ,  Luigi Della Torre ,  Andrea Lorenzo Vitali ,  Ubaldo Mastromatteo

IPC分类号： G01L9/00

CPC分类号： G01L9/0054 ,  G01L9/0045 ,  G01L15/00

摘要： In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.

摘要翻译： 在具有双重测量尺的压力传感器中：半导体材料的整体主体具有第一主表面，主体区域和压力作用在其上的敏感部分; 在整体式主体中形成空腔，并通过作为压力的函数而变形的柔性且可变形的膜与第一主表面分离，并且布置在敏感部分的内部并被体区域包围; 对第一压力值敏感的压阻型低压检测元件集成在膜​​中，并具有作为膜的变形的函数的可变电阻; 此外，在敏感部分内部的本体区域中形成压阻型高压检测元件，并且具有作为压力的函数的可变电阻。 高压检测元件对第二压力值敏感。

公开(公告)号：US07479659B2

公开(公告)日：2009-01-20

申请号：US10446589

申请日：2003-05-27

申请人： Carlo Cognetti ,  Ubaldo Mastromatteo

发明人： Carlo Cognetti ,  Ubaldo Mastromatteo

IPC分类号： H01L27/15

CPC分类号： H01L31/18 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2224/83 ,  H01L2224/05099

摘要： A process for manufacturing encapsulated optical sensors, including the steps of: forming a plurality of mutually spaced optical sensors in a wafer of semiconductor material; bonding a plate of transparent material to the wafer so as to seal the optical sensors; and dividing the wafer into a plurality of dies, each comprising an optical sensor and a respective portion of the plate.

摘要翻译： 一种用于制造封装的光学传感器的方法，包括以下步骤：在半导体材料的晶片中形成多个相互间隔的光学传感器; 将透明材料板粘合到晶片上以便密封光学传感器; 并将晶片分成多个模具，每个模具包括光学传感器和板的相应部分。

公开(公告)号：US20050093013A1

公开(公告)日：2005-05-05

申请号：US10924014

申请日：2004-08-23

申请人： Ubaldo Mastromatteo ,  Andrea Pallotta ,  Pietro Montanini ,  Francesco Martini

发明人： Ubaldo Mastromatteo ,  Andrea Pallotta ,  Pietro Montanini ,  Francesco Martini

IPC分类号： G02B6/42 ,  H01L33/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/024

CPC分类号： G02B6/4228 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/0683

摘要： A packaging structure for optoelectronic components is formed by a first body, of semiconductor material, and a second body, of semiconductor material, fixed to a first face of said first body. A through window is formed in the second body and exposes a portion of the first face of the first body, whereon at least one optoelectronic component is fixed. Through connection regions extend through the first body and are in electrical contact with the optoelectronic component. The through connection regions are insulated from the rest of the first body via through insulation regions. Contact regions are arranged on the bottom face of the first body and are connected to said optoelectronic component via the through connection regions.

摘要翻译： 用于光电子部件的封装结构由半导体材料的第一主体和半导体材料的第二主体形成，固定到所述第一主体的第一面。 在第二主体中形成通孔，并暴露出第一主体的第一面的一部分，其中固定有至少一个光电子部件。 通过连接区域延伸穿过第一主体并且与光电子部件电接触。 通过连接区域经由绝缘区域与第一体的其余部分绝缘。 接触区域布置在第一主体的底面上，并且经由贯穿连接区域连接到所述光电子部件。

公开(公告)号：US06501623B1

公开(公告)日：2002-12-31

申请号：US09357078

申请日：1999-07-20

申请人： Simone Sassolini ,  Sarah Zerbini ,  Benedetto Vigna ,  Ubaldo Mastromatteo

发明人： Simone Sassolini ,  Sarah Zerbini ,  Benedetto Vigna ,  Ubaldo Mastromatteo

IPC分类号： G11B555

CPC分类号： G11B5/5552 ,  G11B5/11

摘要： A microactuator is attached to a first face of a coupling formed on a suspension, so that an R/W transducer projects from an opposite face. A hole in the coupling permits passage of an adhesive mass interposed between a rotor of the microactuator and the R/W transducer. A strip of adhesive material extends between a die accommodating the microactuator and the coupling, and externally surrounds the microactuator. The coupling acts as a protective shield for the microactuator, both mechanically and electrically. The coupling covers the microactuator at the front, and prevents foreign particles from blocking the microactuator. In addition, the coupling electrically insulates the R/W transducer, which is sensitive to magnetic fields, from regions of the microactuator biased to a high voltage. With the coupling, the strip forms a sealing structure, which in practice surrounds the microactuator on all sides.

摘要翻译： 微型致动器附接到形成在悬架上的联接器的第一面上，使得R / W传感器从相对的面突出。 联接器中的孔允许插入在微致动器的转子和R / W换能器之间的粘合剂块的通过。 一条粘合剂材料在容纳微型致动器的模具和联接器之间延伸，并且外部包围微型致动器。 联轴器作为微型致动器的机械和电气保护屏蔽。 联轴器覆盖前部的微型致动器，并防止外来颗粒堵塞微型致动器。 另外，该耦合将对磁场敏感的R / W传感器与微型制动器的偏压高电压绝缘。 通过联接，条带形成密封结构，实际上围绕着所有侧面上的微致动器。

公开(公告)号：US06391741B1

公开(公告)日：2002-05-21

申请号：US09616227

申请日：2000-07-14

申请人： Ubaldo Mastromatteo ,  Sarah Zerbini ,  Simone Sassolini ,  Benedetto Vigna

发明人： Ubaldo Mastromatteo ,  Sarah Zerbini ,  Simone Sassolini ,  Benedetto Vigna

IPC分类号： H01L2176

CPC分类号： G11B5/56 ,  B81C1/00896 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process for assembling a microactuator on a R/W transducer that includes forming a first wafer of semiconductor material having a plurality of microactuators including suspended regions and fixed regions separated from each other by first trenches; forming a second wafer of semiconductor material comprising blocking regions connecting mobile and fixed intermediate regions separated from each other by second trenches; bonding the two wafers so as to form a composite wafer wherein the suspended regions of the first wafer are connected to the mobile intermediate regions of the second wafer, and the fixed regions of the first wafer are connected to the fixed intermediate regions of the second wafer; cutting the composite wafer into a plurality of units; fixing the mobile intermediate region of each unit to a respective R/W transducer; and removing the blocking regions. The blocking regions are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

摘要翻译： 一种在R / W换能器上组装微致动器的方法，包括形成具有多个微致动器的半导体材料的第一晶片，所述多个微致动器包括通过第一沟槽彼此分离的悬置区域和固定区域; 形成第二半导体材料晶片，其包括通过第二沟槽彼此分开的连接移动和固定中间区域的阻挡区域; 键合两个晶片以形成复合晶片，其中第一晶片的悬置区域连接到第二晶片的移动中间区域，并且第一晶片的固定区域连接到第二晶片的固定中间区域 ; 将复合晶片切割成多个单元; 将每个单元的移动中间区域固定到相应的R / W换能器; 并去除阻挡区域。 阻挡区域由氧化硅制成，中间区域由多晶硅制成。

公开(公告)号：US06358769B1

公开(公告)日：2002-03-19

申请号：US09513476

申请日：2000-02-25

申请人： Benedetto Vigna ,  Ubaldo Mastromatteo

发明人： Benedetto Vigna ,  Ubaldo Mastromatteo

IPC分类号： H01L2100

CPC分类号： B81C1/00896

摘要： To reduce the risk of breakage of the moving parts of an integrated microstructure during manufacture steps causing mechanical stresses to the moving parts, a temporary immobilization and support structure is formed, whereby a moving region of the microstructure is temporarily integral with the fixed region. The temporary structure is removed at the end of the assembly operations by non-mechanical removal methods. According to one solution, the temporary structure is formed by a fusible element removed by melting or evaporation, by applying a sufficient quantity of energy thereto. Alternatively, a structural region of polymer material is formed in the trench separating the moving part from the fixed part, or an adhesive material layer sensitive to ultraviolet radiation is applied.

摘要翻译： 为了减少在对运动部件造成机械应力的制造步骤期间的集成微结构的运动部件的破损的危险，形成临时固定和支撑结构，由此微结构的运动区域与固定区域暂时成为一体。 临时结构在组装操作结束时通过非机械去除方法去除。 根据一种解决方案，临时结构由通过熔化或蒸发除去的可熔元件通过向其施加足够量的能量而形成。 或者，在将移动部分与固定部分分开的沟槽中形成聚合物材料的结构区域，或施加对紫外线辐射敏感的粘合剂材料层。