公开(公告)号：US20080277062A1

公开(公告)日：2008-11-13

申请号：US12176501

申请日：2008-07-21

Applicant: Chishio Koshimizu ,  Yohei Yamazawa

Inventor： Chishio Koshimizu ,  Yohei Yamazawa

IPC: H01L21/3065 ,  H01L21/30

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

Abstract: This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.

Abstract translation: 本发明包括连接在基座（21）和接地之间并具有可变阻抗的第一滤波器（27），用于基于在处理室中产生的等离子体（P）的状态来检测电信号的传感器（28） 11），以及控制装置（36），用于根据从传感器（28）输出的检测结果来控制第一过滤器（27）的阻抗。 因此，可以实现与等离子体处理的目的相匹配的优选的等离子体分布。

公开(公告)号：US07416330B2

公开(公告)日：2008-08-26

申请号：US11196402

申请日：2005-08-04

Applicant: Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

Inventor： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC: G01J5/08 ,  G01N25/00

CPC classification number: G01J5/0003 ,  G01K11/12

Abstract: The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

Abstract translation: 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。

公开(公告)号：US07415940B2

公开(公告)日：2008-08-26

申请号：US10477456

申请日：2002-05-15

Applicant: Chishio Koshimizu ,  Yohei Yamazawa

Inventor： Chishio Koshimizu ,  Yohei Yamazawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

Abstract: This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.

Abstract translation: 本发明包括连接在基座（21）和接地之间并具有可变阻抗的第一滤波器（27），用于基于在处理室中产生的等离子体（P）的状态来检测电信号的传感器（28） 11），以及控制装置（36），用于根据从传感器（28）输出的检测结果来控制第一过滤器（27）的阻抗。 因此，可以实现与等离子体处理的目的相匹配的优选的等离子体分布。

公开(公告)号：US20080053817A1

公开(公告)日：2008-03-06

申请号：US11849586

申请日：2007-09-04

Applicant: Chishio Koshimizu ,  Naoki Matsumoto

Inventor： Chishio Koshimizu ,  Naoki Matsumoto

IPC: H05F3/00 ,  B01J19/12

CPC classification number: H01J37/32027 ,  H01J37/32091

Abstract: A plasma processing apparatus includes a high-frequency power supply applying a high-frequency power to at least any of plural electrodes; a direct-current power supply applying a direct-current voltage to at least any of the plural electrodes; a matching device provided between the electrode to which the high-frequency power is applied and the high-frequency power supply; and a control device controlling the high-frequency power supply such that the high-frequency power applied to the electrode is previously adjusted at a timing when the apply of the direct-current voltage to the electrode by the direct-current power supply is started or terminated, under a state in which the high-frequency power is applied to the electrode by the high-frequency power supply.

Abstract translation: 等离子体处理装置包括向多个电极中的至少任一个施加高频电力的高频电源; 向所述多个电极中的至少任一个施加直流电压的直流电源; 设置在施加高频电力的电极与高频电源之间的匹配装置; 以及控制高频电源的控制装置，使得在通过直流电源施加到电极的直流电压开始的时刻预先调整施加到电极的高频电力，或者 在通过高频电源向电极施加高频电力的状态下终止。

公开(公告)号：US20060176490A1

公开(公告)日：2006-08-10

申请号：US11349276

申请日：2006-02-08

Applicant: Tomohiro Suzuki ,  Chishio Koshimizu

Inventor： Tomohiro Suzuki ,  Chishio Koshimizu

IPC: G01B9/02

CPC classification number: G01B9/02021 ,  G01B9/02018 ,  G01B9/02025 ,  G01B9/02031 ,  G01B9/0209 ,  G01B11/06 ,  G01B2290/25 ,  G01K5/52 ,  G01K11/00

Abstract: In the apparatus according to the present invention, light from a light source is split into measurement light and reference light, the optical path length of the reference light is altered and a plurality of measurement light interference waveforms resulting from the interference of measurement beams reflected at a measurement target and the reference light are measured. One of these interference waveforms is designated as a reference interference waveform, another interference waveform corresponding to a measurement beam reciprocally reflected at the two end surfaces of the measurement target twice more than the measurement beam corresponding to the reference interference waveform is designated as a selected interference waveform, the optical path length of the measurement light indicated by the distance between the two end surfaces of the measurement target is measured based upon these interference waveforms. The temperature of the measurement targets is determined in correspondence to the optical path length.

Abstract translation: 在根据本发明的装置中，来自光源的光被分成测量光和参考光，参考光的光程长度被改变，并且由测量光束的干涉产生的多个测量光干涉波形反映在 测量测量对象和参考光。 将这些干扰波形中的一个指定为参考干扰波形，将对应于在测量对象的两个端面处往复反射的测量光束的另一个干扰波形比对应于参考干扰波形的测量波长多两倍指定为所选干扰 基于这些干扰波形，测量由测量对象的两个端面之间的距离指示的测量光的光程长度。 根据光程长度确定测量对象的温度。

公开(公告)号：US20060152734A1

公开(公告)日：2006-07-13

申请号：US11325504

申请日：2006-01-05

Applicant: Tomohiro Suzuki ,  Chishio Koshimizu

Inventor： Tomohiro Suzuki ,  Chishio Koshimizu

IPC: G01B9/02

CPC classification number: G01B11/0675

Abstract: A measuring apparatus comprises a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a drive means for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a light receiving means for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.

Abstract translation: 测量装置包括发射具有允许光在每个测量目标上透射和反射的波长的光的光源，将来自光源的光分解成测量光和参考光的分束器，参考反射镜，其中 来自分离器的参考光被反射，用于驱动参考反射镜以调整从参考反射镜反射的参考光的光程长度的驱动装置和用于测量从参考反射镜反射的参考光的干涉的光接收装置 当来自分路器的参考光被照射到参考反射镜时，作为来自分离器的测量光从多个测量目标物反射的测量光束朝向测量目标辐射，以便透射通过测量目标。

公开(公告)号：US20060037703A1

公开(公告)日：2006-02-23

申请号：US11156561

申请日：2005-06-21

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC: C23F1/00

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3065

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US06214162B1

公开(公告)日：2001-04-10

申请号：US09342213

申请日：1999-06-29

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H05H100

CPC classification number: H01J37/321

Abstract: This invention relates to a plasma generating apparatus having a plasma generating electrode, and improves the controllability of the etching selectivity and the etching shape. In a plasma processing apparatus, an electrode is located in a processing chamber. A plasma generating RF power is supplied from a plasma generating RF power supply to the electrode. A to-be-processed object W is mounted on a lower electrode located in the processing chamber. RF powers having their phases adjusted to predetermined values are applied to the plasma generating electrode and the lower electrode. RF powers of a continuous wave or RF power pulse trains can be used as the RF powers.

Abstract translation: 本发明涉及一种具有等离子体产生电极的等离子体产生装置，并提高了蚀刻选择性和蚀刻形状的可控性。 在等离子体处理装置中，电极位于处理室中。 从等离子体产生RF电源向电极供应等离子体产生RF功率。 待处理物体W安装在位于处理室中的下电极上。 将其相位调整到预定值的RF功率施加到等离子体产生电极和下电极。 连续波或射频功率脉冲串的射频功率可以用作射频功率。

公开(公告)号：US05997687A

公开(公告)日：1999-12-07

申请号：US907418

申请日：1997-08-07

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/32706

Abstract: This invention relates to optimization of processing with a pulse plasma. The frequency at the initial period of rise of each pulse is shifted higher than that in the steady state in accordance with the ON timing of a plasma excitation RF power pulse. With this setting, the RF power pulse is matched to a high resonance frequency used when no plasma exists in a processing chamber, or a plasma is weak, thereby enhancing the ignition performance of the pulse plasma. In this invention, a biasing RF power pulse is controlled to adjust the maximum, minimum, or average value of a potential on the processing surface of a substrate to be a predetermined value or less. A means for this control includes a means for controlling the output waveform of the biasing RF power pulse, and a means for controlling the frequency of the biasing RF power pulse. By this control, the damage to the substrate due to collision of ions with the substrate is reduced, and uniform plasma processing is performed.

Abstract translation: 本发明涉及用脉冲等离子体进行处理的优化。 根据等离子体激发RF功率脉冲的导通时间，每个脉冲的初始上升时间的频率比稳态的频率高。 利用这种设置，RF功率脉冲与在处理室中不存在等离子体时所使用的高谐振频率相匹配，或等离子体较弱，从而提高脉冲等离子体的点火性能。 在本发明中，控制偏置RF功率脉冲以将衬底的处理表面上的电位的最大值，最小值或平均值调整为预定值或更小。 用于该控制的装置包括用于控制偏置RF功率脉冲的输出波形的装置，以及用于控制偏置RF功率脉冲的频率的装置。 通过该控制，由于离子与衬底的碰撞而对衬底的损伤降低，并且进行均匀的等离子体处理。

公开(公告)号：US5928532A

公开(公告)日：1999-07-27

申请号：US962736

申请日：1997-11-03

Applicant: Chishio Koshimizu ,  Susumu Saito

Inventor： Chishio Koshimizu ,  Susumu Saito

IPC: G01N21/68 ,  H01J37/32 ,  B23K10/00 ,  B44C1/22 ,  G01N21/00

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J37/32954 ,  H01J37/32963

Abstract: When processing using a plasma is performed for an object to be processed, a photodetecting unit sequentially detects emission of two active species having specific wavelengths in a designated period during the processing. On the basis of the emission detection information of the two active species, two approximate expressions of linear functions are obtained in the relationship between the emission intensity and time. The ratio of the two approximate expressions of linear functions and the derivative of the ratio are obtained to form a graph in which the ratio is plotted on the abscissa, the derivative of the ratio is plotted on the ordinate, and the intersection between the average value of the ratio and the average value of the derivative of the ratio is the origin. The ratio and the derivative of the ratio are obtained by using the emission detection information of the two active species during the processing after the designated period. The end point of the plasma processing is determined when the position of the ratio and the derivative of the ratio thus obtained deviates from a predetermined region in the graph.

Abstract translation: 当对待处理对象进行使用等离子体的处理时，光检测单元依次检测在处理期间的指定期间内具有特定波长的两种活性物质的发射。 基于两种活性物质的发射检测信息，在发射强度和时间的关系中获得两个线性函数的近似表达式。 获得线性函数的两个近似表达式和比率导数之间的比率，以形成其中横坐标绘制比率的曲线图，该比率的导数绘制在纵坐标上，平均值之间的交点 的比率和该比率的导数的平均值是起源。 通过在指定时间段之后的处理期间使用两种活性物质的发射检测信息来获得该比率的比率和导数。 当比例的位置和由此获得的比率的导数偏离图中的预定区域时，确定等离子体处理的终点。