公开(公告)号：US5565114A

公开(公告)日：1996-10-15

申请号：US294396

申请日：1994-08-23

申请人： Susumu Saito ,  Chishio Koshimizu ,  Kazuo Eguchi

发明人： Susumu Saito ,  Chishio Koshimizu ,  Kazuo Eguchi

IPC分类号： G01N21/68 ,  H01J37/32 ,  G01N21/00

CPC分类号： H01J37/32935 ,  G01N21/68 ,  H01J37/32963 ,  H01J37/3299

摘要： This invention provides an end point detection method including the steps of sequentially detecting, when a process using a plasma is performed for an object to be processed, emission spectra in a specific wavelength band of an active species in the plasma by using a photodetector, calculating sum average values of emission intensities of the emission spectra, calculating the ratio or the difference between the sum average values to obtain a calculated value, and determining a point at which the calculated value exceeds a predetermined reference value as an end point of the process.

摘要翻译： 本发明提供了一种终点检测方法，包括以下步骤：当通过使用光电检测器对等离子体中的活性物质的特定波段进行使用等离子体的处理的发射光谱时， 计算发光光谱的发光强度的平均值，计算得到计算值的和平均值之间的比率或差值，以及确定计算值超过预定参考值的点作为处理的终点。

公开(公告)号：US5928532A

公开(公告)日：1999-07-27

申请号：US962736

申请日：1997-11-03

申请人： Chishio Koshimizu ,  Susumu Saito

发明人： Chishio Koshimizu ,  Susumu Saito

IPC分类号： G01N21/68 ,  H01J37/32 ,  B23K10/00 ,  B44C1/22 ,  G01N21/00

CPC分类号： H01J37/32935 ,  G01N21/68 ,  H01J37/32954 ,  H01J37/32963

摘要： When processing using a plasma is performed for an object to be processed, a photodetecting unit sequentially detects emission of two active species having specific wavelengths in a designated period during the processing. On the basis of the emission detection information of the two active species, two approximate expressions of linear functions are obtained in the relationship between the emission intensity and time. The ratio of the two approximate expressions of linear functions and the derivative of the ratio are obtained to form a graph in which the ratio is plotted on the abscissa, the derivative of the ratio is plotted on the ordinate, and the intersection between the average value of the ratio and the average value of the derivative of the ratio is the origin. The ratio and the derivative of the ratio are obtained by using the emission detection information of the two active species during the processing after the designated period. The end point of the plasma processing is determined when the position of the ratio and the derivative of the ratio thus obtained deviates from a predetermined region in the graph.

摘要翻译： 当对待处理对象进行使用等离子体的处理时，光检测单元依次检测在处理期间的指定期间内具有特定波长的两种活性物质的发射。 基于两种活性物质的发射检测信息，在发射强度和时间的关系中获得两个线性函数的近似表达式。 获得线性函数的两个近似表达式和比率导数之间的比率，以形成其中横坐标绘制比率的曲线图，该比率的导数绘制在纵坐标上，平均值之间的交点 的比率和该比率的导数的平均值是起源。 通过在指定时间段之后的处理期间使用两种活性物质的发射检测信息来获得该比率的比率和导数。 当比例的位置和由此获得的比率的导数偏离图中的预定区域时，确定等离子体处理的终点。

公开(公告)号：US08824875B2

公开(公告)日：2014-09-02

申请号：US13034858

申请日：2011-02-25

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： A21B2/00 ,  F26B19/00

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D11/12

摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US08777483B2

公开(公告)日：2014-07-15

申请号：US13231027

申请日：2011-09-13

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

IPC分类号： G01K1/00 ,  G01J5/00

CPC分类号： G01K11/12

摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.

摘要翻译： 温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

公开(公告)号：US08764288B2

公开(公告)日：2014-07-01

申请号：US13476264

申请日：2012-05-21

申请人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

发明人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： G01J5/00 ,  G01B9/02

CPC分类号： G01J5/02 ,  G01K1/026 ,  G01K11/125

摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

摘要翻译： 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US08741095B2

公开(公告)日：2014-06-03

申请号：US12415466

申请日：2009-03-31

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： C23C16/509 ,  H01L21/3065 ,  C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32091

摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for supporting a substrate to be processed in the processing chamber; a processing gas supply unit for supplying a processing gas into a processing space; a plasma excitation unit for generating a plasma by exciting the processing gas in the processing chamber; a first radio frequency power supply unit for supplying a first radio frequency power to the first electrode to attract ions in the plasma to the substrate; and a first radio frequency power amplitude modulation unit for modulating an amplitude of the first radio frequency power at a predetermined interval. The plasma processing apparatus further includes a first radio frequency power frequency modulation unit for modulating a frequency of the first radio frequency power in substantially synchronously with the amplitude modulation of the first radio frequency power.

摘要翻译： 等离子体处理装置包括真空排气处理室; 用于在所述处理室中支撑待处理的基板的第一电极; 处理气体供应单元，用于将处理气体供应到处理空间中; 等离子体激发单元，用于通过激励处理室中的处理气体来产生等离子体; 第一射频电源单元，用于向第一电极提供第一射频功率以将等离子体中的离子吸引到衬底; 以及用于以预定间隔调制第一射频功率的幅度的第一射频功率幅度调制单元。 等离子体处理装置还包括第一射频功率频率调制单元，用于与第一射频功率的幅度调制基本同步地调制第一射频功率的频率。

公开(公告)号：US08513563B2

公开(公告)日：2013-08-20

申请号：US13403588

申请日：2012-02-23

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： B23K10/00

CPC分类号： H01J37/32165 ,  H01J37/32082

摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

摘要翻译： 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。

公开(公告)号：US08426317B2

公开(公告)日：2013-04-23

申请号：US12791095

申请日：2010-06-01

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： H01L21/302

CPC分类号： H01J37/32623 ,  H01J37/32091 ,  H01J37/32642

摘要： An optimum application voltage for reducing deposits on a peripheral portion of a substrate as well as improving a process result in balance is effectively found without changing a height of a focus ring. A plasma processing apparatus includes a focus ring which includes a dielectric ring provided so as to surround a substrate mounting portion of a mounting table and a conductive ring provided on the dielectric ring; a voltage sensor configured to detect a floating voltage of the conductive ring; a DC power supply configured to apply a DC voltage to the conductive ring. An optimum voltage to be applied to the conductive ring is obtained based on a floating voltage actually detected from the conductive ring, and the optimum application voltage is adjusted based on a variation in the actually detected floating voltage for each plasma process.

摘要翻译： 在不改变聚焦环的高度的情况下，有效地发现用于减少衬底的周边部分上的沉积物以及改善平衡处理结果的最佳施加电压。 一种等离子体处理装置包括聚焦环，该聚焦环包括设置成围绕安装台的基板安装部分设置的介质环和设置在介质环上的导电环; 电压传感器，被配置为检测所述导电环的浮置电压; DC电源，被配置为向所述导电环施加DC电压。 基于从导电环实际检测到的浮动电压，获得施加到导电环的最佳电压，并且基于每个等离子体处理的实际检测到的浮动电压的变化来调整最佳施加电压。

公开(公告)号：US08343306B2

公开(公告)日：2013-01-01

申请号：US12046094

申请日：2008-03-11

申请人： Satoshi Tanaka ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

发明人： Satoshi Tanaka ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32706 ,  H01J37/32091

摘要： A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.

摘要翻译： 等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。 等离子体处理装置对基板进行等离子体处理。 容纳室容纳衬底。 安装台设置在壳体室内并与基板一起安装。 环形构件设置在安装台中。 电源单元为安装级提供高频电源。 观察单元光学地观察等离子体的分布。 电压施加单元向环形构件施加DC电压。 控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

公开(公告)号：US08137471B2

公开(公告)日：2012-03-20

申请号：US12696323

申请日：2010-01-29

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC分类号： C23C16/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。