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    Lateral light shield in backside illuminated imaging sensors
    62.
    发明授权
    Lateral light shield in backside illuminated imaging sensors 有权
    背面照明成像传感器的侧面防护罩

    公开(公告)号：US08772898B2

    公开(公告)日：2014-07-08

    申请号：US13370085

    申请日：2012-02-09

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    IPC分类号： H01L31/0216

    CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

    摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

    摘要翻译： 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。 当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

    Backside illuminated imaging sensor with vertical pixel sensor
    63.
    发明授权
    Backside illuminated imaging sensor with vertical pixel sensor 有权
    背面照明成像传感器与垂直像素传感器

    公开(公告)号：US08513762B2

    公开(公告)日：2013-08-20

    申请号：US13250237

    申请日：2011-09-30

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H01L31/00 ,  H01L31/0232

    CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

    摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

    High full-well capacity pixel with graded photodetector implant
    64.
    发明授权
    High full-well capacity pixel with graded photodetector implant 有权
    具有渐变光电探测器植入物的高全阱容量像素

    公开(公告)号：US08502290B2

    公开(公告)日：2013-08-06

    申请号：US13615196

    申请日：2012-09-13

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

    摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

    Image sensor with contact dummy pixels
    65.
    发明授权
    Image sensor with contact dummy pixels 有权
    具有接触虚拟像素的图像传感器

    公开(公告)号：US08492865B2

    公开(公告)日：2013-07-23

    申请号：US12848628

    申请日：2010-08-02

    申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L27/146 ,  H01L31/02

    CPC分类号： H01L27/14656 ,  H01L27/1463 ,  H01L27/1464

    摘要： An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer.

    摘要翻译： 图像传感器阵列包括基底层，金属层，外延层，多个成像像素和接触虚拟像素。 金属层设置在基底层的上方。 外延层设置在基板层和金属层之间。 成像像素设置在外延层内，并且每个包括用于收集图像信号的光敏元件。 接触虚拟像素配置在外延层内并且包括穿过外延层的导电路径。 导电路径耦合到外延层上方的金属层。

    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT
    67.
    发明申请
    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT 有权
    具有分级光电转换器的高全能容量像素

    公开(公告)号：US20130001661A1

    公开(公告)日：2013-01-03

    申请号：US13615196

    申请日：2012-09-13

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

    摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

    CMOS image sensor with heat management structures
    69.
    发明授权
    CMOS image sensor with heat management structures 有权
    具有热管理结构的CMOS图像传感器

    公开(公告)号：US08274101B2

    公开(公告)日：2012-09-25

    申请号：US12852990

    申请日：2010-08-09

    申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14632 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/1464

    摘要： An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer.

    摘要翻译： 图像传感器包括器件晶片的器件晶片衬底，器件晶片的器件层，以及任选的热控结构和/或散热器。 器件层设置在器件晶片衬底的前侧，并且包括设置在像素阵列区域内的多个感光元件和设置在外围电路区域内的外围电路。 光敏元件对入射到器件晶片衬底背面的光敏感。 热控制结构设置在器件晶片衬底内，并且将像素阵列区域与外围电路区域隔离，以减少外围电路区域和像素阵列区域之间的热传递。 散热器将热量从器件层传导出去。

    Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy
    70.
    发明授权
    Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy 有权
    使用选择性外延的图像传感器晶体管的轻掺杂漏极（LDD）

    公开(公告)号：US08253200B2

    公开(公告)日：2012-08-28

    申请号：US12274275

    申请日：2008-11-19

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

    IPC分类号： H01L29/78

    CPC分类号： H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/6659 ,  H01L29/66636

    摘要： Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.

    摘要翻译： 本发明的实施例涉及一种具有设置在硅衬底中的像素晶体管和外围晶体管的图像传感器。 对于一些实施例，保护涂层设置在外围晶体管上，并且掺杂的硅在衬底上外延生长以形成用于像素晶体管的轻掺杂漏极（LDD）区域。 保护氧化物可以用于在像素晶体管的LDD区域的形成期间防止外围晶体管上的硅的外延生长。