公开(公告)号：US20090315020A1

公开(公告)日：2009-12-24

申请号：US12141265

申请日：2008-06-18

申请人： Gurtej S. Sandhu ,  Chandra Mouli

发明人： Gurtej S. Sandhu ,  Chandra Mouli

IPC分类号： H01L29/88 ,  H01L21/329

CPC分类号： H01L29/66151 ,  B82Y10/00 ,  H01L21/28 ,  H01L21/283 ,  H01L28/90 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/872 ,  H01L29/88 ,  H01L45/00

摘要： Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

摘要翻译： 一些实施例包括形成二极管的方法，其中第一电极形成为具有从基部向上延伸的基座。 沿着延伸穿过基座和基底的波状形貌沉积至少一层，并且在最少一层上形成第二电极。 第一电极，至少一层和第二电极一起形成当一个极性的电压施加到结构时在第一和第二电极之间传导电流的结构，并且当电压具有 与所述一个极性相反的极性被施加到该结构。 一些实施例包括具有第一电极的二极管，该第一电极包含从基底向上延伸的两个或更多个突起，在第一电极上具有至少一个层，并且在该至少一个层上具有第二电极。

公开(公告)号：US20090286348A1

公开(公告)日：2009-11-19

申请号：US12508371

申请日：2009-07-23

申请人： Chandra Mouli

发明人： Chandra Mouli

IPC分类号： H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/148

摘要： A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation-region into the photosensor, thereby suppressing dark current in imagers.

摘要翻译： 具有位于氧化物隔离区域和光电传感器之间的富含卤素区域的像素单元。 富含卤素的区域防止从隔离区泄漏到光电传感器中，从而抑制成像器中的暗电流。

公开(公告)号：US07598134B2

公开(公告)日：2009-10-06

申请号：US10902297

申请日：2004-07-28

申请人： Chandra Mouli

发明人： Chandra Mouli

IPC分类号： H01L21/8239

CPC分类号： H01L29/66666 ,  H01L21/8213 ,  H01L27/105 ,  H01L27/10826 ,  H01L27/10873 ,  H01L27/10879 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/4236 ,  H01L29/7827 ,  H01L29/785 ,  Y10S438/931

摘要： A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.

摘要翻译： 存储器件包括存储器单元阵列和外围设备。 至少一些单独的记忆单元包括含有SiC的碳酸化部分。 至少一些外围设备不包括任何碳酸化部分。 晶体管包括第一源极/漏极，第二源极/漏极，包括在第一和第二源极/漏极之间包含SiC的半导体衬底的碳酸化部分的沟道以及与沟道的相对侧可操作地相关联的栅极。

公开(公告)号：US20090206429A1

公开(公告)日：2009-08-20

申请号：US12400597

申请日：2009-03-09

申请人： Howard E. Rhodes ,  Chandra Mouli

发明人： Howard E. Rhodes ,  Chandra Mouli

IPC分类号： H01L29/06 ,  H01L31/02

CPC分类号： H01L21/26586 ,  H01L21/76224 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of dopants of the first conductivity type. The sidewall and bottom implanted region located adjacent the trench isolation reduces surface leakage and dark current.

摘要翻译： 公开了具有位于第一导电类型的衬底内的侧壁和底部注入区的沟槽隔离。 侧壁和底部植入区域由第一导电类型的掺杂剂的成角度的植入物，90度植入物或倾斜植入物和90度植入物的组合形成。 位于沟槽隔离附近的侧壁和底部注入区域减少了表面泄漏和暗电流。

公开(公告)号：US07573113B2

公开(公告)日：2009-08-11

申请号：US11093286

申请日：2005-03-30

申请人： Chandra Mouli ,  Howard E. Rhodes ,  Richard A. Mauritzson

发明人： Chandra Mouli ,  Howard E. Rhodes ,  Richard A. Mauritzson

IPC分类号： H01L27/148 ,  H01L29/80

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/0352 ,  H01L31/101

摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.

摘要翻译： 公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。 超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度为约5×10 17原子/ cm 3至约1×10 19原子/ cm 3。 超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。 超浅钉扎层与第二导电类型的电荷收集区域接触。

公开(公告)号：US20090169153A1

公开(公告)日：2009-07-02

申请号：US12393812

申请日：2009-02-26

申请人： Ji Soo Lee ,  Jeff A. Mckee ,  Chandra Mouli

发明人： Ji Soo Lee ,  Jeff A. Mckee ,  Chandra Mouli

IPC分类号： G02B6/12

CPC分类号： H01L27/14625 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14643

摘要： A device and method for providing an optical guide of a pixel to guide incoming light to/from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.

摘要翻译： 一种用于提供像素的光导以将来自/来自像素的光转换装置的入射光引导以提高光学串扰抗扰度的装置和方法。 光导包括形成为填充有产生反射的材料的沟槽的光反射势垒。 沟槽填充材料可以具有小于用于沟槽周围层的材料的折射率以提供光反射结构或者沟槽填充材料可以提供反射表面的折射率。

公开(公告)号：US07544533B2

公开(公告)日：2009-06-09

申请号：US11327377

申请日：2006-01-09

申请人： Chandra Mouli ,  Kunal R. Parekh

发明人： Chandra Mouli ,  Kunal R. Parekh

IPC分类号： H01L21/00

CPC分类号： H01L21/823842 ,  H01L21/28202 ,  H01L21/823857 ,  H01L27/14689 ,  H01L29/518

摘要： A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations.

摘要翻译： 一种提供集成电路的方法和装置，该集成电路具有多个具有不同厚度和氮浓度的栅极氧化物层的栅叠层结构，以及具有不同导电类型和活性掺杂浓度的栅电极。

公开(公告)号：US20090114959A1

公开(公告)日：2009-05-07

申请号：US12153151

申请日：2008-05-14

申请人： Chandra Mouli

发明人： Chandra Mouli

IPC分类号： H01L31/028

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14654

摘要： A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.

摘要翻译： 具有由诸如SiC或碳酸化硅的较高碳浓缩物形成的隔离通道的衬底的像素单元。 包含SiC或碳酸化硅的沟道设置在像素单元的衬底上，以减少暗电流泄漏。

公开(公告)号：US07514715B2

公开(公告)日：2009-04-07

申请号：US10923943

申请日：2004-08-24

申请人： Howard Rhodes ,  Chandra Mouli

发明人： Howard Rhodes ,  Chandra Mouli

IPC分类号： H01L29/04 ,  H01L21/8238

CPC分类号： H01L21/26586 ,  H01L21/76224 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of dopants of the first conductivity type. The sidewall and bottom implanted region located adjacent the trench isolation reduces surface leakage and dark current.

摘要翻译： 公开了具有位于第一导电类型的衬底内的侧壁和底部注入区的沟槽隔离。 侧壁和底部植入区域由第一导电类型的掺杂剂的成角度的植入物，90度植入物或倾斜植入物和90度植入物的组合形成。 位于沟槽隔离附近的侧壁和底部注入区域减少了表面泄漏和暗电流。

公开(公告)号：US07510897B2

公开(公告)日：2009-03-31

申请号：US11708067

申请日：2007-02-20

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14689

摘要： A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.

摘要翻译： 公开了一种具有由自对准倾斜​​植入物形成的钉扎表面层的钉扎光电二极管。 可以调整植入物的角度以在被钉扎表面层和像素传感器单元的传输门的电活动区域之间提供适当的偏移。 被钉扎表面层通过采用与用于形成光电二极管区域的掩模级别相同的掩模级，然后以零度以外的角度注入掺杂剂来形成。