公开(公告)号：US07157768B2

公开(公告)日：2007-01-02

申请号：US10991345

申请日：2004-11-09

申请人： Franz Hofmann ,  Erhard Landgraf ,  Wolfgang Rosner ,  Michael Specht ,  Martin Staedele

发明人： Franz Hofmann ,  Erhard Landgraf ,  Wolfgang Rosner ,  Michael Specht ,  Martin Staedele

IPC分类号： H01L27/115

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/845 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/785

摘要： In a semiconductor memory, a plurality of FinFET arrangements with trapping layers or floating gate electrodes as storage mediums are present on respective top sides of fins made from semiconductor material. The material of the gate electrodes is also present on two side walls of the fins, in order to form side wall transistors, and between the gate electrodes forms parts of a word line belonging to the corresponding fin.

摘要翻译： 在半导体存储器中，在由半导体材料制成的翅片的相应顶侧上存在多个具有捕获层或浮栅电极作为存储介质的FinFET布置。 栅电极的材料也存在于翅片的两个侧壁上，以便形成侧壁晶体管，并且在栅电极之间形成属于相应鳍片的字线的部分。

公开(公告)号：US20060267084A1

公开(公告)日：2006-11-30

申请号：US11139976

申请日：2005-05-31

申请人： Wolfgang Rosner ,  Franz Hofmann ,  Michael Specht ,  Martin Stadele ,  Johannes Luyken

发明人： Wolfgang Rosner ,  Franz Hofmann ,  Michael Specht ,  Martin Stadele ,  Johannes Luyken

IPC分类号： H01L29/76

CPC分类号： H01L27/108 ,  H01L27/10802 ,  H01L27/1203 ,  H01L29/7393

摘要： A semiconductor memory device comprises a plurality of memory cells, each memory cell having a respective transistor. The transistor comprises a transistor body of a first conductivity type, a drain area and a source area each having a second conductivity type, wherein said drain area and source area are embedded in the transistor body on a first surface of said transistor body, a gate structure having a gate dielectric layer and a gate electrode. Said gate structure is arranged between said drain area and said source area. An emitter area of said first conductivity type is provided wherein said emitter area is arranged on top of said drain area.

摘要翻译： 半导体存储器件包括多个存储单元，每个存储单元具有相应的晶体管。 晶体管包括第一导电类型的晶体管体，漏极区域和源极区域，每个具有第二导电类型，其中所述漏极区域和源极区域嵌入在所述晶体管本体的第一表面上的晶体管本体中，栅极 具有栅极电介质层和栅电极的结构。 所述栅极结构布置在所述漏极区域和所述源极区域之间。 提供了所述第一导电类型的发射极区域，其中所述发射极区域布置在所述漏极区域的顶部。

公开(公告)号：US20060267064A1

公开(公告)日：2006-11-30

申请号：US11139977

申请日：2005-05-31

申请人： Wolfgang Rosner ,  Franz Hofmann ,  Michael Specht ,  Martin Stadele

发明人： Wolfgang Rosner ,  Franz Hofmann ,  Michael Specht ,  Martin Stadele

IPC分类号： H01L29/94

CPC分类号： H01L27/10873 ,  H01L21/7624 ,  H01L27/10802 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/7841 ,  H01L29/945

摘要： The semiconductor memory device comprises a plurality of memory cells. Each memory cell comprises a respective transistor and a respective capacitor unit. The transistor comprises a transistor body of a first conductivity type, a drain area and a source area each having a second conductivity type, the drain area and source area are embedded in the transistor body on a first surface of the transistor body, and a gate structure having a gate dielectric layer and a gate electrode, the gate structure is arranged between the drain area and the source area. An isolation trench is arranged adjacent to said transistor body, having a dielectric layer and a conductive material, wherein the isolation trench is at least partially filled with the conductive material. The conductive material is isolated by said dielectric layer from the transistor body. The capacitor unit is formed by the transistor body representing a first electrode and the conductive material representing the second electrode.

摘要翻译： 半导体存储器件包括多个存储单元。 每个存储单元包括相应的晶体管和相应的电容器单元。 晶体管包括第一导电类型的晶体管体，漏极区域和源极区域，每个具有第二导电类型，漏极区域和源极区域嵌入在晶体管本体的第一表面上，并且栅极 具有栅极介电层和栅电极的结构，栅极结构布置在漏极区域和源极区域之间。 绝缘沟槽被布置成与所述晶体管本体相邻，具有电介质层和导电材料，其中隔离沟槽至少部分地被导电材料填充。 导电材料通过所述介电层与晶体管本体隔离。 电容器单元由表示第一电极的晶体管体和表示第二电极的导电材料形成。

公开(公告)号：US07075148B2

公开(公告)日：2006-07-11

申请号：US11073214

申请日：2005-03-05

申请人： Franz Hofmann ,  Erhard Landgraf ,  Richard Johannes Luyken ,  Thomas Schulz ,  Michael Specht

发明人： Franz Hofmann ,  Erhard Landgraf ,  Richard Johannes Luyken ,  Thomas Schulz ,  Michael Specht

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7926 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923

摘要： The invention relates to a semiconductor memory having a multiplicity of memory cells, each of the memory cells having N (e.g., four) vertical memory transistors with trapping layers. Higher contact regions are formed in higher semiconductor regions extending obliquely with respect to the rows and columns of the cell array, the gate electrode generally being led to the step side areas of the higher semiconductor region. A storage density of 1-2F2 per bit can thus be achieved.

摘要翻译： 本发明涉及一种具有多个存储单元的半导体存储器，每个存储器单元具有N（例如四个）垂直存储晶体管，具有捕获层。 在相对于单元阵列的行和列倾斜地延伸的较高半导体区域中形成更高的接触区域，栅电极通常被引导到较高半导体区域的台阶侧区域。 因此可以实现每位1-2F 2的存储密度。

公开(公告)号：US20060108646A1

公开(公告)日：2006-05-25

申请号：US11282904

申请日：2005-11-18

申请人： Franz Hofmann ,  Erhard Landgraf ,  Michael Specht

发明人： Franz Hofmann ,  Erhard Landgraf ,  Michael Specht

IPC分类号： H01L29/76 ,  H01L21/8234

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/7923

摘要： This invention relates to a method for producing an NROM semiconductor memory device and a corresponding NROM semiconductor memory device. The inventive production method comprises the following steps: a plurality of spaced-apart U-shaped MOSFETS are provided along rows in a first direction and along gaps in a second direction inside trenches of a semiconductor substrate, said U-shaped MOSFETS comprising a multilayer dielectric, especially an ONO dielectric, for trapping charges; source/drain areas are provided between the U-shaped MOSFETS in intermediate spaces located between the rows that extend parallel to the gaps; insulating trenches are provided in the source/drain areas between the U-shaped MOSFETS of adjacent gaps, down to a certain depth in the semiconductor substrate, said insulating trenches cutting up the source/drain areas into respective bit lines; the insulating trenches are filled with an insulating material; and word lines are provided for connecting respective rows of U-shaped MOSFETS.

摘要翻译： 本发明涉及一种制造NROM半导体存储器件和相应的NROM半导体存储器件的方法。 本发明的制造方法包括以下步骤：在半导体衬底的沟槽内沿着第一方向并沿着第二方向的间隙沿着行设置多个间隔开的U形MOSFET，所述U形MOSFETS包括多层电介质 ，特别是用于捕获电荷的ONO电介质; 源极/漏极区域设置在位于平行于间隙延伸的行之间的中间空间中的U形MOSFET之间; 绝缘沟槽设置在相邻间隙的U形MOSFET之间的源极/漏极区域中，在半导体衬底内向下到达一定深度，所述绝缘沟槽将源极/漏极区域切割成相应的位线; 绝缘槽填充绝缘材料; 并且提供用于连接各行的U形MOSFET的字线。

公开(公告)号：US20050040456A1

公开(公告)日：2005-02-24

申请号：US10486184

申请日：2002-09-02

申请人： Michael Specht ,  Franz Hofmann

发明人： Michael Specht ,  Franz Hofmann

IPC分类号： G11C16/04 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/513 ,  G11C16/0416 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883

摘要： A semiconductor memory element has a substrate, in which a source region and a drain region are formed, a floating gate electrically insulated from the substrate, and a tunnel barrier arrangement, via which charging or discharging of the floating gate can be performed. It is possible to alter the conductivity of a channel between source and drain regions by charging or discharging the floating gate. A source line is electrically conductively connected to the source region and controls the charge transmission of the tunnel barrier arrangement.

摘要翻译： 半导体存储元件具有形成源极区域和漏极区域的基板，与基板电绝缘的浮动栅极以及可以进行浮置栅极的充电或放电的隧道势垒装置。 通过对浮动栅极进行充电或放电，可以改变源区和漏区之间的沟道的导电性。 源极线导电地连接到源极区域并且控制隧道势垒装置的电荷传输。

公开(公告)号：US08961909B2

公开(公告)日：2015-02-24

申请号：US13823525

申请日：2011-10-12

申请人： Manfred Lehr ,  Josef Dachs ,  Franz Egner ,  Rolf Bank ,  Bernd Stürmer ,  Volkmar Frick ,  Michael Specht

发明人： Manfred Lehr ,  Josef Dachs ,  Franz Egner ,  Rolf Bank ,  Bernd Stürmer ,  Volkmar Frick ,  Michael Specht

IPC分类号： B01J8/06 ,  C10G2/00 ,  C10L3/08 ,  F28F13/08

CPC分类号： B01J8/067 ,  B01J8/065 ,  B01J2208/0023 ,  B01J2208/00238 ,  B01J2208/0053 ,  C10G2/32 ,  C10G2/341 ,  C10L3/08 ,  F28F13/08

摘要： A tube bundle reactor for carrying out catalytic gas phase reactions, particularly methanation reactions, has a bundle of catalyst-filled reaction tubes through which reaction gas flows and around which heat carrier flows during operation. In the region of the catalyst filling, the reaction tubes run through at least two heat carrier zones which are separated from one another, the first of which heat carrier zones extends over the starting region of the catalyst filling. The reaction tubes each have a first reaction tube portion with a first hydraulic diameter of the catalyst filling and, downstream thereof in flow direction of the reaction gas, at least a second reaction tube portion with a second hydraulic diameter of the catalyst filling that is greater than the first hydraulic diameter of the catalyst filling.

摘要翻译： 用于进行催化气相反应，特别是甲烷化反应的管束反应器具有一束催化剂填充的反应管，反应气体在其中流动并在运行期间使热载体流过。 在催化剂填充的区域中，反应管穿过至少两个彼此分离的热载体区，其中第一个热载体区在催化剂填充物的起始区域上延伸。 反应管各自具有第一反应管部分，其具有催化剂填充物的第一水力直径，并且在反应气体的流动方向上在其下游，至少第二反应管部分具有催化剂填充物的第二水力直径更大 比第一液压直径的催化剂填充。

公开(公告)号：US20120191663A1

公开(公告)日：2012-07-26

申请号：US13440186

申请日：2012-04-05

申请人： Aharon BLITZER ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

发明人： Aharon BLITZER ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

IPC分类号： G06F17/30

CPC分类号： G06F11/1458 ,  G06F11/1456 ,  G06F11/1471

摘要： Described are techniques for processing recovery points. One or more storage objects for which data protection processing is performed are determined. The data protection processing includes copying data for each of said one or more storage objects to one or more data protection storage devices. One or more recovery points corresponding to each of said one or more storage objects are determined. For each of the one or more recovery points corresponding to each of the one or more storage objects, performing processing including determining whether said each recovery point is at least one of recoverable in accordance with recoverable criteria and restartable in accordance with restartable criteria.

摘要翻译： 描述的是处理恢复点的技术。 确定执行数据保护处理的一个或多个存储对象。 数据保护处理包括将用于所述一个或多个存储对象中的每一个的数据复制到一个或多个数据保护存储设备。 确定对应于所述一个或多个存储对象中的每一个的一个或多个恢复点。 对于与一个或多个存储对象中的每一个相对应的一个或多个恢复点中的每个恢复点，执行处理，包括确定所述每个恢复点是否是根据可恢复标准可恢复的至少一个，并且根据可重新启动的标准可重新启动。

公开(公告)号：US08185505B1

公开(公告)日：2012-05-22

申请号：US12286374

申请日：2008-09-29

申请人： Aharon Blitzer ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

发明人： Aharon Blitzer ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

IPC分类号： G06F17/00 ,  G06F7/00

CPC分类号： G06F11/1458 ,  G06F11/1456 ,  G06F11/1471

摘要： Described are techniques for processing recovery points. One or more storage objects for which data protection processing is performed are determined. The data protection processing includes copying data for each of said one or more storage objects to one or more data protection storage devices. One or more recovery points corresponding to each of said one or more storage objects are determined. For each of the one or more recovery points corresponding to each of the one or more storage objects, performing processing including determining whether said each recovery point is at least one of recoverable in accordance with recoverable criteria and restartable in accordance with restartable criteria.

摘要翻译： 描述的是处理恢复点的技术。 确定执行数据保护处理的一个或多个存储对象。 数据保护处理包括将用于所述一个或多个存储对象中的每一个的数据复制到一个或多个数据保护存储设备。 确定对应于所述一个或多个存储对象中的每一个的一个或多个恢复点。 对于与一个或多个存储对象中的每一个相对应的一个或多个恢复点中的每个恢复点，执行处理，包括确定所述每个恢复点是否是根据可恢复标准可恢复的至少一个，并且根据可重新启动的标准可重新启动。

公开(公告)号：US20120091730A1

公开(公告)日：2012-04-19

申请号：US13263940

申请日：2010-04-09

申请人： Bernd Stuermer ,  Volkmar Frick ,  Michael Specht ,  Michael Sterner ,  Berthold Hahn ,  Ulrich Zuberbuehler

发明人： Bernd Stuermer ,  Volkmar Frick ,  Michael Specht ,  Michael Sterner ,  Berthold Hahn ,  Ulrich Zuberbuehler

IPC分类号： F03B13/00

CPC分类号： C25B1/04 ,  C10L3/08 ,  C12M21/04 ,  C12M43/00 ,  C12M43/08 ,  C25B15/08 ,  Y02E50/343 ,  Y02E60/324 ,  Y02E60/366 ,  Y02P20/129 ,  Y02P20/133 ,  Y02P20/134

摘要： An energy supply system is provided with an electricity generating device for regeneratively generating electrical energy that can be fed into an electricity supply grid. The energy supply system includes an electricity generating device for regeneratively generating electrical energy which can be fed into an electricity supply grid, a hydrogen generating device for generating hydrogen using electrical energy from the regenerative electricity generating device, a methanation device for converting hydrogen generated by the hydrogen generating device and a supplied carbon oxide gas into a gas containing methane, and a gas providing device for providing a supplementary gas or a replacement gas in a variably specifiable supplementary/replacement gas quality suitable for feeding into a gas supply grid with the use of the gas containing methane from the methanation device and/or the hydrogen from the hydrogen generating device. A method of operating the system is also provided.

摘要翻译： 能量供给系统具有用于再生发电的发电装置，该电能可供给到供电电网。 能量供给系统包括用于再生发电的发电装置，其可以供给到供电电网;氢发生装置，其使用来自再生发电装置的电能产生氢;甲烷化装置，用于将由 氢气生成装置和供给的碳氧化物气体组装成含有甲烷的气体，以及气体提供装置，用于以可变形式指定的补充/替换气体质量提供补充气体或替代气体，该气体适合于通过使用 含有来自甲烷化装置的甲烷的气体和/或来自氢生成装置的氢气。 还提供了一种操作该系统的方法。