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    Techniques for processing recovery points
    1.
    发明授权
    Techniques for processing recovery points 有权
    处理恢复点的技术

    公开(公告)号：US08600952B2

    公开(公告)日：2013-12-03

    申请号：US13440186

    申请日：2012-04-05

    申请人： Aharon Blitzer ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

    发明人： Aharon Blitzer ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

    IPC分类号： G06F17/00 ,  G06F7/00

    CPC分类号： G06F11/1458 ,  G06F11/1456 ,  G06F11/1471

    摘要： Described are techniques for processing recovery points. One or more storage objects for which data protection processing is performed are determined. The data protection processing includes copying data for each of said one or more storage objects to one or more data protection storage devices. One or more recovery points corresponding to each of said one or more storage objects are determined. For each of the one or more recovery points corresponding to each of the one or more storage objects, performing processing including determining whether said each recovery point is at least one of recoverable in accordance with recoverable criteria and restartable in accordance with restartable criteria.

    摘要翻译： 描述的是处理恢复点的技术。 确定执行数据保护处理的一个或多个存储对象。 数据保护处理包括将用于所述一个或多个存储对象中的每一个的数据复制到一个或多个数据保护存储设备。 确定对应于所述一个或多个存储对象中的每一个的一个或多个恢复点。 对于与一个或多个存储对象中的每一个相对应的一个或多个恢复点中的每个恢复点，执行处理，包括确定所述每个恢复点是否是根据可恢复标准可恢复的至少一个，并且根据可重新启动的标准可重新启动。

    TECHNIQUES FOR PROCESSING RECOVERY POINTS
    2.
    发明申请
    TECHNIQUES FOR PROCESSING RECOVERY POINTS 有权
    处理恢复点的技术

    公开(公告)号：US20120191663A1

    公开(公告)日：2012-07-26

    申请号：US13440186

    申请日：2012-04-05

    申请人： Aharon BLITZER ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

    发明人： Aharon BLITZER ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

    IPC分类号： G06F17/30

    CPC分类号： G06F11/1458 ,  G06F11/1456 ,  G06F11/1471

    摘要： Described are techniques for processing recovery points. One or more storage objects for which data protection processing is performed are determined. The data protection processing includes copying data for each of said one or more storage objects to one or more data protection storage devices. One or more recovery points corresponding to each of said one or more storage objects are determined. For each of the one or more recovery points corresponding to each of the one or more storage objects, performing processing including determining whether said each recovery point is at least one of recoverable in accordance with recoverable criteria and restartable in accordance with restartable criteria.

    摘要翻译： 描述的是处理恢复点的技术。 确定执行数据保护处理的一个或多个存储对象。 数据保护处理包括将用于所述一个或多个存储对象中的每一个的数据复制到一个或多个数据保护存储设备。 确定对应于所述一个或多个存储对象中的每一个的一个或多个恢复点。 对于与一个或多个存储对象中的每一个相对应的一个或多个恢复点中的每个恢复点，执行处理，包括确定所述每个恢复点是否是根据可恢复标准可恢复的至少一个，并且根据可重新启动的标准可重新启动。

    Techniques for processing recovery points
    3.
    发明授权
    Techniques for processing recovery points 有权
    处理恢复点的技术

    公开(公告)号：US08185505B1

    公开(公告)日：2012-05-22

    申请号：US12286374

    申请日：2008-09-29

    申请人： Aharon Blitzer ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

    发明人： Aharon Blitzer ,  Aviram Katz ,  David Barta ,  Michael Specht ,  Yaron Dar

    IPC分类号： G06F17/00 ,  G06F7/00

    CPC分类号： G06F11/1458 ,  G06F11/1456 ,  G06F11/1471

    摘要： Described are techniques for processing recovery points. One or more storage objects for which data protection processing is performed are determined. The data protection processing includes copying data for each of said one or more storage objects to one or more data protection storage devices. One or more recovery points corresponding to each of said one or more storage objects are determined. For each of the one or more recovery points corresponding to each of the one or more storage objects, performing processing including determining whether said each recovery point is at least one of recoverable in accordance with recoverable criteria and restartable in accordance with restartable criteria.

    摘要翻译： 描述的是处理恢复点的技术。 确定执行数据保护处理的一个或多个存储对象。 数据保护处理包括将用于所述一个或多个存储对象中的每一个的数据复制到一个或多个数据保护存储设备。 确定对应于所述一个或多个存储对象中的每一个的一个或多个恢复点。 对于与一个或多个存储对象中的每一个相对应的一个或多个恢复点中的每个恢复点，执行处理，包括确定所述每个恢复点是否是根据可恢复标准可恢复的至少一个，并且根据可重新启动的标准可重新启动。

    Shell-and-tube reactor for carrying out catalytic gas phase reactions
    4.
    发明授权
    Shell-and-tube reactor for carrying out catalytic gas phase reactions 有权
    用于进行催化气相反应的壳 - 管反应器

    公开(公告)号：US08961909B2

    公开(公告)日：2015-02-24

    申请号：US13823525

    申请日：2011-10-12

    申请人： Manfred Lehr ,  Josef Dachs ,  Franz Egner ,  Rolf Bank ,  Bernd Stürmer ,  Volkmar Frick ,  Michael Specht

    发明人： Manfred Lehr ,  Josef Dachs ,  Franz Egner ,  Rolf Bank ,  Bernd Stürmer ,  Volkmar Frick ,  Michael Specht

    IPC分类号： B01J8/06 ,  C10G2/00 ,  C10L3/08 ,  F28F13/08

    CPC分类号： B01J8/067 ,  B01J8/065 ,  B01J2208/0023 ,  B01J2208/00238 ,  B01J2208/0053 ,  C10G2/32 ,  C10G2/341 ,  C10L3/08 ,  F28F13/08

    摘要： A tube bundle reactor for carrying out catalytic gas phase reactions, particularly methanation reactions, has a bundle of catalyst-filled reaction tubes through which reaction gas flows and around which heat carrier flows during operation. In the region of the catalyst filling, the reaction tubes run through at least two heat carrier zones which are separated from one another, the first of which heat carrier zones extends over the starting region of the catalyst filling. The reaction tubes each have a first reaction tube portion with a first hydraulic diameter of the catalyst filling and, downstream thereof in flow direction of the reaction gas, at least a second reaction tube portion with a second hydraulic diameter of the catalyst filling that is greater than the first hydraulic diameter of the catalyst filling.

    摘要翻译： 用于进行催化气相反应，特别是甲烷化反应的管束反应器具有一束催化剂填充的反应管，反应气体在其中流动并在运行期间使热载体流过。 在催化剂填充的区域中，反应管穿过至少两个彼此分离的热载体区，其中第一个热载体区在催化剂填充物的起始区域上延伸。 反应管各自具有第一反应管部分，其具有催化剂填充物的第一水力直径，并且在反应气体的流动方向上在其下游，至少第二反应管部分具有催化剂填充物的第二水力直径更大 比第一液压直径的催化剂填充。

    Energy Supply System and Operating Method
    5.
    发明申请
    Energy Supply System and Operating Method 有权
    能源供应系统和运行方式

    公开(公告)号：US20120091730A1

    公开(公告)日：2012-04-19

    申请号：US13263940

    申请日：2010-04-09

    申请人： Bernd Stuermer ,  Volkmar Frick ,  Michael Specht ,  Michael Sterner ,  Berthold Hahn ,  Ulrich Zuberbuehler

    发明人： Bernd Stuermer ,  Volkmar Frick ,  Michael Specht ,  Michael Sterner ,  Berthold Hahn ,  Ulrich Zuberbuehler

    IPC分类号： F03B13/00

    CPC分类号： C25B1/04 ,  C10L3/08 ,  C12M21/04 ,  C12M43/00 ,  C12M43/08 ,  C25B15/08 ,  Y02E50/343 ,  Y02E60/324 ,  Y02E60/366 ,  Y02P20/129 ,  Y02P20/133 ,  Y02P20/134

    摘要： An energy supply system is provided with an electricity generating device for regeneratively generating electrical energy that can be fed into an electricity supply grid. The energy supply system includes an electricity generating device for regeneratively generating electrical energy which can be fed into an electricity supply grid, a hydrogen generating device for generating hydrogen using electrical energy from the regenerative electricity generating device, a methanation device for converting hydrogen generated by the hydrogen generating device and a supplied carbon oxide gas into a gas containing methane, and a gas providing device for providing a supplementary gas or a replacement gas in a variably specifiable supplementary/replacement gas quality suitable for feeding into a gas supply grid with the use of the gas containing methane from the methanation device and/or the hydrogen from the hydrogen generating device. A method of operating the system is also provided.

    摘要翻译： 能量供给系统具有用于再生发电的发电装置，该电能可供给到供电电网。 能量供给系统包括用于再生发电的发电装置，其可以供给到供电电网;氢发生装置，其使用来自再生发电装置的电能产生氢;甲烷化装置，用于将由 氢气生成装置和供给的碳氧化物气体组装成含有甲烷的气体，以及气体提供装置，用于以可变形式指定的补充/替换气体质量提供补充气体或替代气体，该气体适合于通过使用 含有来自甲烷化装置的甲烷的气体和/或来自氢生成装置的氢气。 还提供了一种操作该系统的方法。

    Integrated Circuits Having a Contact Region and Methods for Manufacturing the Same
    6.
    发明申请
    Integrated Circuits Having a Contact Region and Methods for Manufacturing the Same 有权
    具有接触区域的集成电路及其制造方法

    公开(公告)号：US20090309152A1

    公开(公告)日：2009-12-17

    申请号：US12137388

    申请日：2008-06-11

    申请人： Roman Knoefler ,  Michael Specht ,  Franz Hofmann ,  Florian Beug ,  Dirk Manger ,  Stephan Riedel

    发明人： Roman Knoefler ,  Michael Specht ,  Franz Hofmann ,  Florian Beug ,  Dirk Manger ,  Stephan Riedel

    IPC分类号： H01L29/792 ,  H01L21/336

    CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L21/8221 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

    摘要： In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a substrate, a fin structure disposed above the substrate, and a memory cell contacting region. The fin structure may include a memory cell region having a plurality of memory cell structures being disposed above one another, each memory cell structure having an active region of a respective memory cell. Furthermore, the memory cell contacting region may be configured to electrically contact each of the memory cell structures, wherein the memory cell contacting region may include a plurality of contact regions, which are at least partially displaced with respect to each other in a direction parallel to the main processing surface of the substrate.

    摘要翻译： 在一个实施例中，提供了具有存储单元布置的集成电路。 存储单元布置可以包括基板，设置在基板上方的散热片结构和存储单元接触区域。 鳍结构可以包括具有多个存储单元结构的存储单元区域，每个存储单元结构具有相应存储单元的有源区域。 此外，存储器单元接触区域可以被配置为电接触每个存储单元结构，其中存储单元接触区域可以包括多个接触区域，这些接触区域在平行于存储器单元结构的方向上相对于彼此至少部分地位移 基材的主要加工表面。

    INTEGRATED CIRCUIT INCLUDING A FIRST GATE STACK AND A SECOND GATE STACK AND A METHOD OF MANUFACTURING
    7.
    发明申请
    INTEGRATED CIRCUIT INCLUDING A FIRST GATE STACK AND A SECOND GATE STACK AND A METHOD OF MANUFACTURING 有权
    集成电路，包括第一栅极堆叠和第二栅极堆叠及其制造方法

    公开(公告)号：US20090072274A1

    公开(公告)日：2009-03-19

    申请号：US11855695

    申请日：2007-09-14

    申请人： Roman Knoefler ,  Michael Specht ,  Josef Willer

    发明人： Roman Knoefler ,  Michael Specht ,  Josef Willer

    IPC分类号： H01L27/10 ,  H01L21/8238

    CPC分类号： H01L27/11568 ,  H01L21/823828 ,  H01L27/105 ,  H01L27/11573

    摘要： An integrated circuit including a first gate stack and a second gate stack and a method of manufacturing is disclosed. One embodiment provides non-volatile memory cells including a first gate stack and a gate dielectric on a first surface section of a main surface of a semiconductor substrate, and a second gate stack including a memory layer stack on a second surface section. A first pattern is transferred into the first gate stack and a second pattern into the second gate stack.

    摘要翻译： 公开了一种包括第一栅极堆叠和第二栅极堆叠的集成电路及其制造方法。 一个实施例提供包括在半导体衬底的主表面的第一表面部分上的第一栅极堆叠和栅极电介质的非易失性存储器单元，以及包括在第二表面部分上的存储层堆叠的第二栅极堆叠。 将第一图案转移到第一栅极堆叠中，将第二图案转移到第二栅极堆叠中。

    Fin field effect transistor memory cell
    10.
    发明申请
    Fin field effect transistor memory cell 审中-公开
    Fin场效应晶体管存储单元

    公开(公告)号：US20060001058A1

    公开(公告)日：2006-01-05

    申请号：US11157496

    申请日：2005-06-20

    申请人： Lars Dreeskornfeld ,  Jessica Hartwich ,  Franz Hofmann ,  Johannes Kretz ,  Michael Specht

    发明人： Lars Dreeskornfeld ,  Jessica Hartwich ,  Franz Hofmann ,  Johannes Kretz ,  Michael Specht

    IPC分类号： H01L29/76 ,  H01L21/336

    CPC分类号： H01L29/42384 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/40117 ,  H01L29/66795 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/792

    摘要： A fin field effect transistor memory cell having a first and a second source/drain region, a gate region, a semiconductor fin having a channel region between the first and the second source/drain region, a charge storage layer configured as a trapping layer arranged at least partly on the gate region, and a word line region on at least one part of the charge storage layer. The charge storage layer is set up such that electrical charge carriers can be selectively introduced into the charge storage layer or be removed therefrom by applying predetermined electrical potentials to the fin field effect transistor memory cell.

    摘要翻译： 具有第一和第二源极/漏极区域的栅极场效应晶体管存储单元，栅极区域，具有在第一和第二源极/漏极区域之间的沟道区域的半导体鳍片，被配置为俘获层的电荷存储层， 至少部分地在栅极区域上，以及电荷存储层的至少一部分上的字线区域。 电荷存储层被设置成使得电荷载流子可以选择性地引入电荷存储层中，或者通过向鳍式场效应晶体管存储单元施加预定的电位而将其移除。