Abstract:
A system includes a chamber, a laser beam apparatus configured to generate a laser beam to be introduced into the chamber, a laser controller for the laser beam apparatus to control at least a beam intensity and an output timing of the laser beam, and a target supply unit configured to supply a target material into the chamber, the target material being irradiated with the laser beam for generating extreme ultraviolet light.
Abstract:
There is provided an extreme ultraviolet light generating system. The extreme ultraviolet light generating system may include: a laser apparatus configured to provide pulsed laser light inside a chamber in which EUV light is generated; an optical shutter disposed on an optical path of the pulsed laser light; and a controller configured to open or close the optical shutter, based on a generation signal supplied from an external unit, the generation signal instructing generation of the EUV light.
Abstract:
A laser device (100) may include: a laser resonator (20, 30) configured to output pulsed laser light (L); an actuator (35, 36, 37) configured to change wavelength of the pulsed laser light; and a controller (110) configured to receive data of target wavelength for a plurality of pulses of the pulsed laser light before the pulsed laser light is output, and to control the actuator, based on the data of the target wavelength for the plurality of pulses, such that the wavelength of the pulsed laser light approaches the data of the target wavelength.
Abstract:
A laser beam controlling device may include: a guide laser device; a guide laser beam wavefront adjuster provided in a beam path of the guide laser beam outputted from the guide laser device; a beam combiner configured to adjust travel directions of a laser beam outputted from a laser system and the guide laser beam outputted from the guide laser beam wavefront adjuster to coincide with each other, a both beam wavefront adjuster provided in a beam path of both the laser beam and the guide laser beam outputted from the beam combiner, a beam monitor provided in a beam path of both the laser beam and the guide laser beam outputted from the both beam wavefront adjuster, and a controller configured to control the guide laser beam wavefront adjuster and the both beam wavefront adjuster based on detection results at the beam monitor with respect to both the laser beam and the guide laser beam.
Abstract:
The extreme ultraviolet light generation system may be configured to irradiate a target with a first pulse laser beam and a second pulse laser beam to turn the target into plasma thereby generating extreme ultraviolet light. The system may include a chamber having at least one aperture configured to introduce the first pulse laser beam and the second pulse laser beam; a target supply device configured to supply the target to a predetermined region in the chamber; a first laser apparatus configured to output the first pulse laser beam with which the target in the chamber is to be irradiated, the first pulse laser beam having pulse duration less than 1 ns; and a second laser apparatus configured to output the second pulse laser beam with which the target which has been irradiated with the first pulse laser beam is to be further irradiated.
Abstract:
An extreme ultraviolet light generation device may be configured to generate extreme ultraviolet light by irradiating a target with a laser beam to turn the target into plasma. The extreme ultraviolet light generation device may comprise: a chamber provided with at least one through-hole; an optical system configured to introduce the laser beam into a predetermined region in the chamber through the at least one through-hole; and a target supply device configured to supply a powder target as the target to the predetermined region.
Abstract:
A discharge-pumped gas laser device may include a laser chamber, a pair of discharge electrodes provided in the laser chamber, a fan with a magnetic bearing being provided in the laser chamber and configured to be capable of circulating a gas in the laser chamber, a housing configured to contain the laser chamber, and a magnetic bearing controller connected to the magnetic bearing electrically, being capable of controlling the magnetic bearing, and provided in the housing separately from the laser chamber.
Abstract:
A target supply device may include a reservoir configured to store a target material, the reservoir having a first channel through which the target material passes, a nozzle plate having a second channel through which the target material passes after passing through the first channel, and a filter having a first surface and a second surface and provided between the reservoir and the nozzle plate such that the first surface and the reservoir are face-sealed and the second surface and the nozzle plate are face-sealed, the filter having a plurality of through-holes through which the target material passes.
Abstract:
A laser apparatus includes a first wavelength variable semiconductor laser that outputs first continuous-wave laser light; a first amplifier that pulses and amplifies the first laser light and outputs first pulse laser light; a wavelength conversion system that converts a wavelength of the first pulse laser light and outputs second pulse laser light; an excimer amplifier that amplifies the second pulse laser light and outputs third pulse laser light; a monitor module that measures a wavelength of the third pulse laser light; and a processor that periodically changes a target wavelength of the third pulse laser light and controls a current for changing the wavelength of the laser light from the first semiconductor laser such that the wavelength of the third pulse laser light becomes the target wavelength based on a measured value of the wavelength of the third pulse laser light output at the same target wavelength.
Abstract:
An electronic device manufacturing method according to an aspect of the present disclosure includes determining magnification in a scanning width direction based on a pattern formed in a scanning field of a wafer; measuring a wafer height at points in the scanning field and determining an average value of the wafer height in the scanning width direction; determining a wavelength range of a pulse laser beam in which an allowable CD value is obtained in a case of a focus position based on the average value of the wafer height; determining a first wavelength of the pulse laser beam at which the determined magnification is obtained and determining a target wavelength based on the wavelength range and the first wavelength; outputting a pulse laser beam controlled to have the target wavelength for each pulse; and performing exposure of the scanning field of the wafer to the pulse laser beam.