摘要:
The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.
摘要:
The present invention provides distance-proof N-pass Auto Negotiation systems and methods for Gigabit Ethernet. The present invention distance proofs Auto Negotiation. No matter the distance between two nodes configured according to the systems and methods of the present invention, the link at either end of the two nodes will only come up once each end has negotiated, resolved its link partner's capabilities, and received a similar success signal from the remote node.
摘要:
A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.
摘要:
A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.
摘要:
A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要:
A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.
摘要:
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.
摘要:
A feed device for a distillation tower has an annular, open-bottomed channel located around the periphery of the feed zone of the tower with an inner wall spaced from the inner curved wall of the tower and a top covering the channel to confer a generally inverted-U shape to the cross section of the channel. One or more tangential feed inlets are provided to admit a heated, mixed phase feed to the tower and direct the feed into and along the channel. One or more vapor scoops are provided for each feed inlet with the scoop(s) located on the inner wall of the channel at a sufficient distance along the channel from the inlet to permit cyclonic separation of vapor and liquid before the vapor in the feed from the inlet enters the scoop(s) and passes through a vapor exit port into the central core of the tower.
摘要:
Vane type mist eliminator segments are arranged in a plurality of tiers at separate vertically spaced locations in a tower, typically of the upright, cylindrical type, with the eliminator at each tier covering only a portion of the cross section of the tower. The eliminator segment(s) in each tier are laterally displaced in the tower from the adjacent vertically spaced eliminator segments to form a staggered configuration for the segments. Each mist eliminator preferably extends over 50-70% of the cross-sectional area of the tower to leave an open flow passage in the tier; the staggering of the segments and the associated flow passages defines an upward tortuous or zig-zag open flow path for vapors ascending the tower through the open flow passages when the eliminator segment(s) become fouled in use.
摘要:
A remote control device is provided for controlling an audio playback device. The remote control device includes an input region that is operable to select from a plurality of entities for providing audio content to the audio playback device, and a display for displaying information associated with the entities for providing audio content. The remote control device is configured to request image files from the audio playback device for display on the display. The image files correspond to the entities for providing audio content.