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公开(公告)号：US08236676B2
公开(公告)日：2012-08-07
申请号：US11944903
申请日：2007-11-26
CPC分类号： H01L29/7802 , H01L21/263 , H01L21/266 , H01L21/322 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。
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公开(公告)号：US08003502B2
公开(公告)日：2011-08-23
申请号：US12416935
申请日：2009-04-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。
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63.发明授权公开(公告)号：US07989888B2
公开(公告)日：2011-08-02
申请号：US11468846
申请日：2006-08-31
IPC分类号： H01L29/66
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/167 , H01L29/32 , H01L29/36
摘要： Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
摘要翻译： 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。
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公开(公告)号：US07696528B2
公开(公告)日：2010-04-13
申请号：US11561985
申请日：2006-11-21
IPC分类号： H01L29/74
CPC分类号： H01L31/1113 , H01L29/0626 , H01L29/102 , H01L29/7408 , H01L29/7424 , H01L29/7428
摘要： A thyristor has a radiation-sensitive breakdown structure (20), a gate electrode (92) that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at least one ignition stage (51, 91) equipped with an n-doped auxiliary emitter (51), which forms a pn-junction (55) together with the p-doped base (6), the thyristor being both electrically and radiation-ignited. In a method for contacting a thyristor that can be ignited by radiation with a gate electrode (92), a contact ram (200) that is adapted to the geometry of the gate electrode (92) is pressed against the thyristor. In a method for monitoring the ignition of a thyristor that is ignited by incident radiation, the electric voltage that is applied to the gate electrode (92) or the electrically conductive electrode (105, 201) is monitored.
摘要翻译： 晶闸管具有辐射敏感击穿结构（20），在横向方向上与后者放置一定距离的栅电极（92）和具有至少一个点火台（51,91）的点火台结构 n掺杂的辅助发射器（51）与p掺杂的基极（6）一起形成pn结（55），所述晶闸管是电的和辐射的。 在使栅极电极（92）能够被辐射点燃的晶闸管接触的方法中，适合于栅电极（92）的几何形状的接触柱塞（200）被压靠在晶闸管上。 在监视由入射辐射点燃的晶闸管的点火的方法中，监视施加到栅电极（92）或导电电极（105,201）的电压。
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65.发明申请Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone 有权用于在半导体体中产生停止区域的方法和具有停止区域的半导体部件公开(公告)号：US20100015818A1
公开(公告)日：2010-01-21
申请号：US12550483
申请日：2009-08-31
IPC分类号： H01L21/263
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。 该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。 该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体 在照射侧的方向上与第一区域相邻的区域。
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公开(公告)号：US20090186462A1
公开(公告)日：2009-07-23
申请号：US12416935
申请日：2009-04-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/31
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。
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公开(公告)号：US07514750B2
公开(公告)日：2009-04-07
申请号：US11241866
申请日：2005-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
IPC分类号： H01L23/62
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译： 根据本发明的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。
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公开(公告)号：US07485550B2
公开(公告)日：2009-02-03
申请号：US11166768
申请日：2005-06-24
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/78 , H01L29/167
摘要： A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement (10) and also the respective associated separating zones.
摘要翻译： 一种用于制造半导体元件的方法包括在处理区域中形成氢相关掺杂。处理区域包括至少部分区域（i）位于包含集成半导体电路布置的内连续区域外部，但不包括各自相关联的分离区域， （ii）位于包含相应的集成半导体电路装置（10）的外部连续区域内，以及各自相关联的分离区域。
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69.发明申请Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone 有权用于制造半导体部件中的埋置停止区域的方法和包括埋设停止区域的半导体部件公开(公告)号：US20080160732A1
公开(公告)日：2008-07-03
申请号：US12039173
申请日：2008-02-28
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 半导体体暴露在含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。
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70.发明授权Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，所述半导体部件包括掩埋停止区域公开(公告)号：US07361970B2
公开(公告)日：2008-04-22
申请号：US11083914
申请日：2005-03-18
IPC分类号： H01L31/0248
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.
摘要翻译： 一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面 具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。
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