公开(公告)号：US20100044793A1

公开(公告)日：2010-02-25

申请号：US12609323

申请日：2009-10-30

申请人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

发明人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

IPC分类号： H01L29/78

CPC分类号： H01L29/66659 ,  H01L21/823475 ,  H01L21/823871 ,  H01L23/4827 ,  H01L23/53219 ,  H01L23/53295 ,  H01L27/0255 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/7835 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d(M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。

公开(公告)号：US07667050B2

公开(公告)日：2010-02-23

申请号：US11889596

申请日：2007-08-15

申请人： Junji Shigematsu ,  Isao Yoshida ,  Yukako Harada ,  Masumi Suetsugu

发明人： Junji Shigematsu ,  Isao Yoshida ,  Yukako Harada ,  Masumi Suetsugu

IPC分类号： C07C309/19 ,  C07D333/46

CPC分类号： C07C309/17 ,  C07C381/12 ,  C07C2601/14 ,  C07C2603/74 ,  C07D313/06 ,  C07D333/46 ,  C07D335/00 ,  G03F7/0045 ,  G03F7/0397

摘要： The present invention provides a salt represented by the formula (I): wherein X represents a C3-C30 divalent group containing at least one divalent alicyclic hydrocarbon group, and at least one —CH2— in the C3-C30 divalent group may be substituted with —O— or —CO—, Y represents a C3-C30 cyclic hydrocarbon group which may be substituted with at least one group selected from a C1-C6 alkoxy group, a C1-C4 perfluoroalkyl group, a C1-C6 hydroxyalkyl group, a hydroxyl group and a cyano group, and at least one —CH2— in the C3-C30 cyclic hydrocarbon group may be substituted with —O— or —CO—, Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, and A+ represents an organic counter ion.

摘要翻译： 本发明提供由式（I）表示的盐：其中X表示含有至少一个二价脂环族烃基的C 3 -C 30二价基团，并且C 3 -C 30二价基团中的至少一个-CH 2可以被 -O-或-CO-，Y表示可以被至少一个选自C 1 -C 6烷氧基，C 1 -C 4全氟烷基，C 1 -C 6羟基烷基，C 1 -C 6烷氧基， 羟基和氰基，C3-C30环状烃基中的至少一个-CH2-可以被-O-或-CO-取代，Q1和Q2各自独立地表示氟原子或C1-C6全氟烷基 ，A +表示有机抗衡离子。

公开(公告)号：US20090004600A1

公开(公告)日：2009-01-01

申请号：US12143268

申请日：2008-06-20

申请人： Makoto Akita ,  Isao Yoshida ,  Kazuhiko Hashimoto

发明人： Makoto Akita ,  Isao Yoshida ,  Kazuhiko Hashimoto

IPC分类号： G03C1/053

CPC分类号： G03F7/0397 ,  C07C69/00 ,  C07C2603/24 ,  C08F212/14 ,  C08F212/34 ,  C08F220/18 ,  G03F7/0045 ,  G03F7/0046 ,  Y10S430/106

摘要： A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): wherein R7 represents a hydrogen atom etc., R8 represents a C1-C4 alkyl group, p represents an integer of 1 to 3, and q represents an integer of 0 to 2, (ii) at least one polymerization unit selected from a group consisting of a polymerization unit represented by the formula (II): wherein R1 represents a hydrogen atom etc., R2 represents a C1-C8 alkyl group and ring X represents an alicyclic hydrocarbon group, and a polymerization unit represented by the formula (IV): wherein R3 represents a hydrogen atom etc., R4 and R5 independently represents a hydrogen atom etc., R10 represents a C1-C6 alkyl group etc., and (iii) a polymerization unit represented by the formula (III): wherein R3, R4 and R5 are the same as defined above, E represents a divalent hydrocarbon group, G represents a single bond etc., Z represents a carbonyl group etc. and L represents an anthryl group etc., and (B) at least one acid generator.

摘要翻译： 一种化学放大正型抗蚀剂组合物，其包含（A）树脂，其包含（i）由式（I）表示的聚合单元：其中R7表示氢原子等，R8表示C1-C4烷基，p表示整数 为1〜3，q为0〜2的整数，（ii）至少一种选自由式（II）表示的聚合单元的聚合单元：其中，R1表示氢原子等，R2 代表C1-C8烷基，X代表脂环族烃基，和由式（Ⅳ）表示的聚合单元：其中R3表示氢原子等，R4和R5独立地表示氢原子等，R10表示 C 1 -C 6烷基等，和（iii）由式（III）表示的聚合单元：其中R3，R4和R5与上述定义相同，E表示二价烃基，G表示单键等 Z表示羰基等，L r 表示蒽基等，和（B）至少一种酸发生剂。

公开(公告)号：US20070122750A1

公开(公告)日：2007-05-31

申请号：US11600884

申请日：2006-11-17

申请人： Satoshi Yamaguchi ,  Yukako Harada ,  Isao Yoshida

发明人： Satoshi Yamaguchi ,  Yukako Harada ,  Isao Yoshida

IPC分类号： G03C5/00 ,  C07C309/12

CPC分类号： G03F7/0045 ,  C07C309/17 ,  C07C381/12 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2603/74 ,  G03F7/0397

摘要： The present invention provides a salt of the formula (I): wherein ring X represents monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms, and one or more hydrogen atom in the monocyclic or polycyclic hydrocarbon group is optionally substituted with alkyl group having 1 to 10 carbon atom, alkoxy group having 1 to 10 carbon atom, perfluoroalkyl group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 10 carbon atoms or cyano group; Q1 and Q2 each independently represent fluorine atom or perfluoroalkyl group having 1 to 6 carbon atoms; and A+ represents organic counter ion. The present invention also provides a chemically amplified resist composition comprising the salt of the formula (I).

摘要翻译： 本发明提供式（I）的盐：其中环X表示碳原子数为3〜30的单环或多环烃基，单环或多环烃基中的一个或多个氢原子任选被具有1个 10个碳原子，碳原子数1〜10的烷氧基，碳原子数1〜4的全氟烷基，碳原子数1〜10的羟基烷基或氰基。 Q 1和Q 2各自独立地表示氟原子或具有1至6个碳原子的全氟烷基; 而A +表示有机抗衡离子。 本发明还提供了包含式（I）的盐的化学放大抗蚀剂组合物。

公开(公告)号：US07220532B2

公开(公告)日：2007-05-22

申请号：US10657149

申请日：2003-09-09

申请人： Yoshiyuki Takata ,  Isao Yoshida ,  Hirotoshi Nakanishi

发明人： Yoshiyuki Takata ,  Isao Yoshida ,  Hirotoshi Nakanishi

IPC分类号： G03F7/039

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122

摘要： The present invention provides a chemical amplification type positive resist composition comprising a nitrogen containing compound of the formula (VIa) or (VIb); resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid; and an acid generator of the formula (I)

摘要翻译： 本发明提供了包含式（VIa）或（VIb）的含氮化合物的化学扩增型正性抗蚀剂组合物; 树脂，其含有具有酸不稳定基团的结构单元，其本身在碱性水溶液中不溶或难溶，但通过酸作用而溶于碱水溶液中; 和式（I）的酸产生剂，

公开(公告)号：US20070100096A1

公开(公告)日：2007-05-03

申请号：US11516644

申请日：2006-09-07

申请人： Yukako Harada ,  Isao Yoshida ,  Yoshiyuki Takata

发明人： Yukako Harada ,  Isao Yoshida ,  Yoshiyuki Takata

IPC分类号： C08F4/06 ,  C07C309/12

CPC分类号： C07C309/17 ,  C07C381/12 ,  C07C2601/14

摘要： The present invention provides a salt of the formula (I): wherein X represents divalent or trivalent residue of acyclic hydrocarbon having 1 to 30 carbon atoms or divalent or trivalent residue of hydrocarbon having 3 to 30 carbon atoms which contains monocyclic or bicyclic ring, wherein —CH2— in the hydrocarbon may be substituted with —O— and one or more hydrogen atom in X is optionally substituted with alkoxy group having 1 to 6 carbon atoms, perfluoroalkyl group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, hydroxyl group or cyano group; Q1 and Q2each independently represent fluorine atom or perfluoroalkyl group having 1 to 6 carbon atoms; A+ represents organic counter ion; Y represents hydroxyl group, cyano group or methoxy group; and n shows 1 or 2. The present invention also provides a chemically amplified resist composition comprising the salt of the formula (I).

摘要翻译： 本发明提供式（I）的盐：其中X表示碳原子数1〜30的无环烃的二价或三价残基或含有单环或双环的碳原子数3〜30的二价或三价残基，其中， 在烃中的-CH 2 - 2可以被-O-取代，X中的一个或多个氢原子任选被具有1至6个碳原子的烷氧基，具有1至4个碳原子的全氟烷基取代 ，具有1-6个碳原子的羟基烷基，羟基或氰基; Q 1和Q 2各自独立地表示氟原子或具有1至6个碳原子的全氟烷基; A ^{+ 代表有机抗衡离子; Y表示羟基，氰基或甲氧基; 并且n表示1或2.本发明还提供包含式（I）的盐的化学放大抗蚀剂组合物。}

公开(公告)号：US20070027336A1

公开(公告)日：2007-02-01

申请号：US11390319

申请日：2006-03-28

申请人： Isao Yoshida ,  Yukako Harada ,  Satoshi Yamaguchi ,  Nobuo Ando

发明人： Isao Yoshida ,  Yukako Harada ,  Satoshi Yamaguchi ,  Nobuo Ando

IPC分类号： C07C309/51

CPC分类号： C07C309/17 ,  C07C2603/74

摘要： The present invention provides a salt of the formula (L) A salt of the formula (L): wherein Q represents —CO— group or —C(OH)— group; ring X represents monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms in which a hydrogen atom is substituted with a hydroxyl group at Q position when Q is —C(OH)— group or in which two hydrogen atoms are substituted with ≡O group at Q position when Q is —CO— group, and at least one hydrogen atom in the monocylic or polycyclic hydrocarbon group may optionally be substituted with alkyl group having 1 to 6 carbon atom, alkoxy group having 1 to 6 carbon atom, perfluoroalkyl group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, hydroxyl group or cyano group; R10 and R20 each independently represent fluorine atom or perfluoroalkyl group having 1 to 6 carbon atoms; and A+ represents organic counter ion. The present invention also provides a chemically amplified resist composition comprising the salt of the formula (L).

摘要翻译： 本发明提供式（L）的盐式（L）的盐：其中Q表示-CO-基或-C（OH） - 基; 环X表示当Q为-C（OH） - 基团或其中两个氢原子被≡O基团取代时，其中氢原子被Q位羟基取代的具有3-30个碳原子的单环或多环烃基 在Q为-CO-基的Q位置，单环或多环烃基中的至少一个氢原子可以任选被具有1至6个碳原子的烷基，具有1至6个碳原子的烷氧基，具有1至6个碳原子的烷氧基， 1至4个碳原子，具有1至6个碳原子的羟基烷基，羟基或氰基; R 10和R 20各自独立地表示氟原子或具有1至6个碳原子的全氟烷基; 而A +表示有机抗衡离子。 本发明还提供了包含式（L）的盐的化学放大抗蚀剂组合物。

公开(公告)号：US20050173738A1

公开(公告)日：2005-08-11

申请号：US11049998

申请日：2005-02-04

申请人： Masao Kondo ,  Yutaka Hoshino ,  Kazuhiro Ohnishi ,  Isao Yoshida ,  Masatoshi Morikawa

发明人： Masao Kondo ,  Yutaka Hoshino ,  Kazuhiro Ohnishi ,  Isao Yoshida ,  Masatoshi Morikawa

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/80

CPC分类号： H01L29/66659 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/66628 ,  H01L29/7835 ,  H01L29/7842

摘要： Provided is a technology capable of reducing the on-resistance of a power MISFET while suppressing the generation of defects in a strained silicon layer. A strained silicon layer is formed only over an underlying strained silicon layer in the drain region by epitaxial growth. Large portions of a lightly-doped n type impurity diffusion region, offset region and heavily-doped n type impurity diffusion region are formed in these strained silicon layers, having a higher electron mobility than a conventional silicon layer.

摘要翻译： 提供了一种能够在抑制应变硅层中的缺陷的产生的同时降低功率MISFET的导通电阻的技术。 通过外延生长仅在漏极区域中的下层应变硅层上形成应变硅层。 在这些应变硅层中形成大量的轻掺杂n型杂质扩散区域，偏移区域和重掺杂n型杂质扩散区域，其具有比常规硅层更高的电子迁移率。

公开(公告)号：US20050100819A1

公开(公告)日：2005-05-12

申请号：US10952793

申请日：2004-09-30

申请人： Yusuke Fuji ,  Yoshiyuki Takata ,  Isao Yoshida

发明人： Yusuke Fuji ,  Yoshiyuki Takata ,  Isao Yoshida

IPC分类号： G03C1/76 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126

摘要： A resin which comprises (1) at least one structural unit selected from the group consisting of a structural unit derived from 3-hydroxy-1-adamantyl(meth)acrylate, a structural unit derived from 3,5-dihydroxy-1-adamantyl(meth)acrylate, a structural unit derived from (meth)acryloyloxy-γ-butyrolactone having a lactone ring optionally substituted by alkyl, a structural unit of the formula (Ia) and a structural unit of the formula (Ib) and (2) a structural unit of the formula (II) and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid; and also provides a chemical amplification type positive resist composition comprising a resin defined above and an acid generator.

摘要翻译： 一种树脂，其包含（1）至少一种选自由（甲基）丙烯酸3-羟基-1-金刚烷基酯衍生的结构单元的结构单元，衍生自3,5-二羟基-1-金刚烷基（ 甲基）丙烯酸酯，衍生自具有任选被烷基取代的内酯环的（甲基）丙烯酰氧基-γ-丁内酯的结构单元，式（Ia）的结构单元和式（Ib）和（2）的结构单元 结构单元，其本身在碱性水溶液中不溶或难溶，但通过酸的作用而溶于碱性水溶液中; 并且还提供包含上述树脂和酸发生剂的化学放大型正性抗蚀剂组合物。

公开(公告)号：US20050017296A1

公开(公告)日：2005-01-27

申请号：US10921327

申请日：2004-08-19

申请人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

发明人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8234 ,  H01L23/482 ,  H01L23/532 ,  H01L27/04 ,  H01L27/088 ,  H01L29/417 ,  H01L29/80

CPC分类号： H01L29/66659 ,  H01L21/823475 ,  H01L21/823871 ,  H01L23/4827 ,  H01L23/53219 ,  H01L23/53295 ,  H01L27/0255 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/7835 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。 连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。