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137 条记录 (耗时 0.036 秒)

    Method of manufacturing memory with nano dots
    61.
    发明授权
    Method of manufacturing memory with nano dots 有权
    用纳米点制造记忆的方法

    公开(公告)号：US06913984B2

    公开(公告)日：2005-07-05

    申请号：US10743377

    申请日：2003-12-23

    申请人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

    发明人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

    IPC分类号： B82B1/00 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/06 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/76

    CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792 ,  Y10S977/723 ,  Y10S977/774

    摘要： A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.

    摘要翻译： 利用纳米点制造存储器的方法包括在形成源极和漏极的衬底上依次沉积第一绝缘层，电荷存储层，牺牲层和金属层，在所得结构上形成多个孔 通过阳极氧化金属层并氧化通过孔露出的牺牲层的部分，通过去除氧化的金属层将电荷存储层图案化成具有纳米点，并且使用氧化的牺牲层蚀刻牺牲层和电荷存储层 作为掩模，并且去除氧化的牺牲层，在图案化的电荷存储层上沉积第二绝缘层和栅电极，并且将第一绝缘层，图案化电荷存储层，第二绝缘层和栅电极图案化，以 用于形成具有均匀分布的纳米级存储节点的存储器的预定形状。

    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same
    63.
    发明授权
    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same 有权
    磁性随机存取存储器件，驱动方法和数据写入和读取方法相同

    公开(公告)号：US08218362B2

    公开(公告)日：2012-07-10

    申请号：US12385124

    申请日：2009-03-31

    申请人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/14 ,  G11C11/416 ,  G11C29/82

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.

    摘要翻译： 磁存储器件包括下结构或反铁磁层，钉扎层，信息存储层和形成在下结构或反铁磁层上的自由层。 在操作磁存储器件的方法中，在将自由层的磁化设定为第一磁化方向之后，来自存储信息层的信息被读取或存储。 当第一磁化方向与被钉扎层的磁化方向相反时，存储信息，但是当第一磁化方向与被钉扎层的磁化方向相同时被读取。

    Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same
    69.
    发明申请
    Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same 有权
    磁轨，使用磁畴壁运动的信息存储装置及其制造方法

    公开(公告)号：US20090073859A1

    公开(公告)日：2009-03-19

    申请号：US12155896

    申请日：2008-06-11

    申请人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

    发明人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

    IPC分类号： G11B3/00

    CPC分类号： G11C19/0841 ,  G11C11/14

    摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

    摘要翻译： 提供信息存储装置及其制造方法。 信息存储装置的磁道包括其中至少一个磁畴形成区域和至少一个磁畴壁形成区域沿长度方向交替布置的磁性层。 所述至少一个磁畴形成区域相对于所述至少一个磁畴壁形成区域具有不同的磁各向异性能量。 中间层形成在磁性层下面。 中间层包括至少一个第一材料区域和至少一个第二材料区域。 所述至少一个第一材料区域和所述至少一个第二材料区域中的每一个对应于所述至少一个磁畴形成区域和所述至少一个磁畴壁形成区域中的一个。

    Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array
    70.
    发明授权
    Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array 有权
    使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法

    公开(公告)号：US07282446B2

    公开(公告)日：2007-10-16

    申请号：US10819143

    申请日：2004-04-07

    申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

    发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

    IPC分类号： H01L21/302

    CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

    摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

    摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。