公开(公告)号：US20100081259A1

公开(公告)日：2010-04-01

申请号：US12242990

申请日：2008-10-01

申请人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

发明人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

IPC分类号： H01L21/22 ,  G21K5/00

CPC分类号： H01L21/3221 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/3226 ,  H01L29/1054 ,  H01L29/7842

摘要： A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

摘要翻译： 提供了一种在半导体器件中产生图案化应变区域的方法。 该方法包括将发光束局部引导到半导体本体的表面部分上; 以及利用所述发光束操作位于所述半导体主体的表面部分附近的多个位错，所述发光束的特征在于具有扫描速度，以便产生所述图案化的应变区域。

公开(公告)号：US20090263991A1

公开(公告)日：2009-10-22

申请号：US12497903

申请日：2009-07-06

申请人： Gareth Geoffrey Hougham ,  S. Jay Chey ,  James Patrick Doyle ,  Xiao Hu Liu ,  Christopher V. Jahnes ,  Paul Alfred Lauro ,  Nancy C. LaBianca ,  Michael J. Rooks

发明人： Gareth Geoffrey Hougham ,  S. Jay Chey ,  James Patrick Doyle ,  Xiao Hu Liu ,  Christopher V. Jahnes ,  Paul Alfred Lauro ,  Nancy C. LaBianca ,  Michael J. Rooks

IPC分类号： H01R4/58 ,  B32B37/02

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A method for fabricating a negative thermal expanding system device includes coating a wafer with a thermally decomposable polymer, patterning the decomposable polymer into repeating disk patterns, releasing the decomposable polymer from the wafer and forming a sheet of repeating patterned disks, suspending the sheet into a first solution with seeding compounds for electroless decomposition, removing the sheet from the first solution, suspending the sheet into a second solution to electrolessly deposit a first layer material onto the sheet, removing the sheet from the second solution, suspending the sheet into a third solution to deposit a second layer of material having a lower TCE value than the first layer of material, separating the patterned disks from one another, and annealing thermally the patterned disks to decompose the decomposable polymer and creating a cavity in place of the decomposable polymer.

摘要翻译： 一种制造负热膨胀系统装置的方法包括用可热分解的聚合物涂覆晶片，将可分解的聚合物图案化成重复的圆盘图案，将可分解的聚合物从晶片上释放出来并形成一张重复图案的圆盘，将薄片悬挂在 用于无电解分解的接种化合物的第一溶液，从第一溶液中除去片材，将片材悬浮在第二溶液中以将第一层材料无电沉积到片材上，从第二溶液中除去片材，将片材悬浮在第三溶液中 沉积具有比第一层材料低的TCE值的第二层材料，将图案化的盘彼此分离，并对图案化的盘进行热退火以分解可分解聚合物并产生空腔以代替可分解的聚合物。

公开(公告)号：US20080277765A1

公开(公告)日：2008-11-13

申请号：US11746684

申请日：2007-05-10

申请人： Michael W. Lane ,  Xiao Hu Liu ,  Thomas M. Shaw ,  Mukta G. Farooq ,  Robert Hannon ,  Ian D. W. Melville

发明人： Michael W. Lane ,  Xiao Hu Liu ,  Thomas M. Shaw ,  Mukta G. Farooq ,  Robert Hannon ,  Ian D. W. Melville

IPC分类号： H01L21/78 ,  H01L29/06

CPC分类号： H01L29/0657 ,  H01L21/563 ,  H01L21/78 ,  H01L23/5329 ,  H01L23/562 ,  H01L23/585 ,  H01L24/90 ,  H01L2224/73203 ,  H01L2224/90 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/18301 ,  H01L2924/00

摘要： A semiconductor product comprises a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip. The semiconductor substrate has a top surface and a perimeter. A barrier is formed in the chip within the perimeter. An Ultra Deep Isolation Trench (UDIT) is cut in the top surface of the chip extending down therein between the perimeter and the barrier. A ILD structure with low-k pSICOH dielectric and hard mask layers is formed over the substrate prior to forming the barrier and the UDIT. The ILD structure interconnection structures can be recessed down to the substrate aside from the UDIT.

摘要翻译： 半导体产品包括具有顶表面和包括半导体芯片的底表面的半导体衬底。 半导体衬底具有顶表面和周边。 在周边的芯片中形成屏障。 在深度隔离沟槽（UDIT）中切割在芯片的上表面，其在周边和屏障之间向下延伸。 在形成屏障和UDIT之前，在衬底上形成具有低k pSICOH电介质和硬掩模层的ILD结构。 除了UDIT之外，ILD结构互连结构可以向下凹入底层。

公开(公告)号：US20080179627A1

公开(公告)日：2008-07-31

申请号：US11669902

申请日：2007-01-31

申请人： Meikei Ieong ,  Xiao Hu Liu ,  Qiqing Christine Ouyang ,  Siddhartha Panda ,  Haizhou Yin

发明人： Meikei Ieong ,  Xiao Hu Liu ,  Qiqing Christine Ouyang ,  Siddhartha Panda ,  Haizhou Yin

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/78687

摘要： NMOS and PMOS device structures with separately strained channel regions and methods of their fabrication are disclosed. The source and the drain of the NMOS device is epitaxially grown of a material which causes a shift in the strain of the NMOS device channel in the tensile direction. While, the source and the drain of the PMOS device is epitaxially grown of a material which causes a shift in the strain of the PMOS device channel in the compressive direction.

摘要翻译： 公开了具有单独应变通道区域的NMOS和PMOS器件结构及其制造方法。 NMOS器件的源极和漏极由引起NMOS器件沟道在拉伸方向上的应变移动的材料外延生长。 而PMOS器件的源极和漏极是外延生长的，这种材料导致PMOS器件沟道在压缩方向上的应变移动。

公开(公告)号：US07260810B2

公开(公告)日：2007-08-21

申请号：US10687475

申请日：2003-10-16

申请人： Ronald G. Filippi, Jr. ,  Giovanni Fiorenza ,  Xiao Hu Liu ,  Conal Eugene Murray ,  Gregory Allen Northrop ,  Thomas M. Shaw ,  Richard Andre′ Wachnik ,  Mary Yvonne Lanzerotti Wisniewski

发明人： Ronald G. Filippi, Jr. ,  Giovanni Fiorenza ,  Xiao Hu Liu ,  Conal Eugene Murray ,  Gregory Allen Northrop ,  Thomas M. Shaw ,  Richard Andre′ Wachnik ,  Mary Yvonne Lanzerotti Wisniewski

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G06F17/5018

摘要： A method for analyzing circuit designs includes discretizing a design representation into pixel elements representative of a structure in the design and determining at least one property for each pixel element representing a portion of the design. Then, a response of the design is determined due to local properties across the design.

摘要翻译： 用于分析电路设计的方法包括将设计表示离散成代表设计中的结构的像素元素，并且为表示设计的一部分的每个像素元素确定至少一个属性。 然后，由于设计中的局部属性，确定了设计的响应。