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公开(公告)号：US09670591B2
公开(公告)日：2017-06-06
申请号：US14458825
申请日：2014-08-13
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US20170145592A1
公开(公告)日：2017-05-25
申请号：US15427619
申请日：2017-02-08
CPC分类号： C30B33/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B23/02 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
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公开(公告)号：US09598791B2
公开(公告)日：2017-03-21
申请号：US15080712
申请日：2016-03-25
IPC分类号： C30B23/00 , C30B23/02 , C30B29/40 , B28D5/00 , C30B25/02 , C30B33/02 , C30B25/08 , C30B25/10 , H01L21/02 , H01L21/306
CPC分类号： C30B33/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B23/02 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
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64.发明申请LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM 有权具有减少缺陷的大型氮化铝晶体及其制备方法公开(公告)号：US20160208417A1
公开(公告)日：2016-07-21
申请号：US15080712
申请日：2016-03-25
CPC分类号： C30B33/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B23/02 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
摘要翻译： 降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。 这有助于实际的晶体生产策略和形成具有低缺陷密度（例如，位错密度低于104cm -2）和包含密度低于104cm -3和/或低于104cm -3的MV密度的大体积AlN晶体 。
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65.发明申请ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM 有权具有高透明度的超滤玻璃的氮化钠块状晶体及其形成方法公开(公告)号：US20150218729A1
公开(公告)日：2015-08-06
申请号：US14687993
申请日：2015-04-16
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。
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66.发明申请LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM 审中-公开具有减少缺陷的大型氮化铝晶体及其制备方法公开(公告)号：US20140093671A1
公开(公告)日：2014-04-03
申请号：US14051566
申请日：2013-10-11
CPC分类号： C30B33/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B23/02 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104cm−3.
摘要翻译： 降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。 这有利于实际的晶体生产策略和形成具有低缺陷密度（例如，位错密度低于104cm -2）和包含密度低于104cm -3和/或MV密度低于104cm-3的大体积AlN晶体。
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公开(公告)号：US20100187541A1
公开(公告)日：2010-07-29
申请号：US12642182
申请日：2009-12-18
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： H01L29/207
CPC分类号： H01L29/207 , C30B23/00 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/2258 , H01L29/2003 , H01L33/325
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
摘要翻译： 具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制备通过例如形成包括多个杂质物质的混合晶体并电激活至少一部分晶体来实现。
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公开(公告)号：US07323414B2
公开(公告)日：2008-01-29
申请号：US11363816
申请日：2006-02-28
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/044 , B24B49/006 , H01L21/02052
摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
摘要翻译： 根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及 完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。 此外，提供了通过该方法制备的改进的基板。 根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。
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公开(公告)号：US11183567B2
公开(公告)日：2021-11-23
申请号：US16874813
申请日：2020-05-15
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： C30B29/38 , H01L29/207 , C30B23/00 , C30B29/40 , H01L29/20 , H01L21/02 , H01L21/225 , H01L33/32
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
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公开(公告)号：US20190106808A1
公开(公告)日：2019-04-11
申请号：US16160158
申请日：2018-10-15
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm=2, Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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