公开(公告)号：US20080291024A1

公开(公告)日：2008-11-27

申请号：US11807283

申请日：2007-05-25

申请人： Ying Zhang ,  James E. Reich

发明人： Ying Zhang ,  James E. Reich

IPC分类号： G08B13/14

CPC分类号： G01S5/04 ,  G01S5/0289 ,  G01S13/876

摘要： One embodiment of the present invention provides a system that locates a set of target transmitting mechanism using a mobile sensing infrastructure. During operation, the system determines a reference frame of a sensing mechanism by detecting signals from at least two transmitting mechanisms. The system further determines locations of the target transmitting mechanism relative to the reference frame using the sensing mechanism. In addition, the system produces a result to indicate the locations of the target transmitting mechanisms.

摘要翻译： 本发明的一个实施例提供一种使用移动感测基础设施定位一组目标传送机制的系统。 在操作期间，系统通过检测来自至少两个传送机构的信号来确定感测机构的参考帧。 该系统使用感测机构进一步确定目标传送机构相对于参考系的位置。 另外，系统产生一个结果以指示目标传送机制的位置。

公开(公告)号：US20080283824A1

公开(公告)日：2008-11-20

申请号：US12173642

申请日：2008-07-15

申请人： An L. STEEGEN ,  Haining S. Yang ,  Ying Zhang

发明人： An L. STEEGEN ,  Haining S. Yang ,  Ying Zhang

IPC分类号： H01L29/778

CPC分类号： H01L29/7833 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/1054 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/7849

摘要： A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.

摘要翻译： 半导体器件包括具有在半导体衬底的一部分下延伸的至少一个间隙的半导体衬底。 栅极堆叠在半导体衬底上。 应变层形成在至少一个间隙的至少一部分中。 应变层仅形成在半导体器件的源极区域和漏极区域中的至少一个之下。

公开(公告)号：US20080242070A1

公开(公告)日：2008-10-02

申请号：US11694104

申请日：2007-03-30

申请人： Tze-chiang Chen ,  Bruce B. Doris ,  Rangarajan Jagannathan ,  Hongwen Yan ,  Qingyun Yang ,  Ying Zhang

发明人： Tze-chiang Chen ,  Bruce B. Doris ,  Rangarajan Jagannathan ,  Hongwen Yan ,  Qingyun Yang ,  Ying Zhang

IPC分类号： H01L21/3205

CPC分类号： H01L29/4966 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/517

摘要： Multiple integration schemes for manufacturing dual gate semiconductor structures are disclosed. By employing the novel integration schemes, polysilicon gate MOSFETs and high-k dielectric metal gate MOSFETs are formed on the same semiconductor substrate despite differences in the composition of the gate stack and resulting differences in the etch rates. A thin polysilicon layer is used for one type of gate electrodes and a silicon-containing layer are used for the other type of gate electrodes in these integration schemes to balance the different etch rates and to enable etching of the two different gate stacks.

摘要翻译： 公开了用于制造双栅极半导体结构的多重集成方案。 通过采用新颖的集成方案，尽管栅极堆叠的组成差异以及蚀刻速率的差异，但是在同一半导体衬底上形成多晶硅栅极MOSFET和高k介质金属栅极MOSFET。 对于一种类型的栅电极使用薄多晶硅层，并且在这些集成方案中使用含硅层用于其他类型的栅电极，以平衡不同的蚀刻速率并且能够蚀刻两个不同的栅极堆叠。

公开(公告)号：US07413941B2

公开(公告)日：2008-08-19

申请号：US11433806

申请日：2006-05-13

申请人： Ying Zhang ,  Bruce B. Doris ,  Thomas Safron Kanarsky ,  Meikei Ieong ,  Jakub Tadeusz Kedzierski

发明人： Ying Zhang ,  Bruce B. Doris ,  Thomas Safron Kanarsky ,  Meikei Ieong ,  Jakub Tadeusz Kedzierski

IPC分类号： H01L21/84

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/66795

摘要： A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and then transferring this formation through several etching steps into the SOI layer. The segmented field effect device combines FinFET, or fully depleted silicon-on-insulator FETs, type devices with fully depleted planar devices. This combination allows device width control with FinFET type devices. The segmented field effect device gives high current drive for a given layout area. The segmented field effect devices allow for the fabrication of high performance processors.

摘要翻译： 公开了一种场效应器件，其具有由晶体半导体材料形成的主体，并具有至少一个垂直取向部分和至少一个水平定向部分。 该器件通过在掩模绝缘体中首先制造器件的形成，然后将该形成通过几个蚀刻步骤转移到SOI层中而以SOI技术制造。 分段场效应器件结合FinFET或完全耗尽的绝缘体上硅FET，具有完全耗尽的平面器件的类型器件。 该组合允许使用FinFET类型器件进行器件宽度控制。 分段场效应器件为给定的布局区域提供高电流驱动。 分段场效应器件允许制造高性能处理器。

公开(公告)号：US07348641B2

公开(公告)日：2008-03-25

申请号：US10711182

申请日：2004-08-31

申请人： Huilong Zhu ,  Bruce B. Doris ,  Xinlin Wang ,  Jochen Beintner ,  Ying Zhang ,  Philip J. Oldiges

发明人： Huilong Zhu ,  Bruce B. Doris ,  Xinlin Wang ,  Jochen Beintner ,  Ying Zhang ,  Philip J. Oldiges

IPC分类号： H01L29/94

CPC分类号： H01L29/785 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/7856

摘要： A gated semiconductor device is provided, in which the body has a first dimension extending in a lateral direction parallel to a major surface of a substrate, and second dimension extending in a direction at least substantially vertical and at least substantially perpendicular to the major surface, the body having a first side and a second side opposite the first side. The gated semiconductor device includes a first gate overlying the first side, and having a first gate length in the lateral direction. The gated semiconductor device further includes a second gate overlying the second side, the second gate having a second gate length in the lateral direction which is different from, and preferably shorter than the first gate length. In one embodiment, the first gate and the second gate being electrically isolated from each other. In another embodiment the first gate consists essentially of polycrystalline silicon germanium and the second gate consists essentially of polysilicon.

摘要翻译： 提供了门控半导体器件，其中主体具有在平行于衬底的主表面的横向方向上延伸的第一尺寸，以及在至少基本上垂直且至少基本垂直于主表面的方向上延伸的第二尺寸， 所述主体具有与所述第一侧相对的第一侧和第二侧。 门控半导体器件包括覆盖第一侧的第一栅极，并且在横向上具有第一栅极长度。 门控半导体器件还包括覆盖第二侧的第二栅极，第二栅极在横向上具有不同于第一栅极长度的第二栅极长度，并且优选地短于第一栅极长度。 在一个实施例中，第一栅极和第二栅极彼此电隔离。 在另一个实施例中，第一栅极主要由多晶硅锗组成，第二栅极主要由多晶硅组成。

公开(公告)号：US07343095B2

公开(公告)日：2008-03-11

申请号：US10862827

申请日：2004-06-07

申请人： Ying Zhang ,  Qi Jie Wang ,  Yeng Chai Soh

发明人： Ying Zhang ,  Qi Jie Wang ,  Yeng Chai Soh

IPC分类号： H04J14/02

CPC分类号： G02B6/29338 ,  G02B6/2861 ,  G02B6/29353 ,  G02B6/29356 ,  G02B6/29386 ,  G02B2006/2865

摘要： An optical interleaver comprising a first optical 3×3 coupler for receiving a broadband optical signal at one input port thereof, a second 3×3 optical coupler, three differential delay lines connected in parallel port-to-port between output ports of the first optical 3×3 coupler and input ports of the second optical 3×3 coupler, an infinite impulse response (IIR) element disposed in each of two of the delay lines, and wherein optical signals travelling in the respective delay lines interfere at the second 3×3 coupler to produce three frequency shifted transmission channel output signals at respective output ports of the second 3×3 coupler.

摘要翻译： 一种光学交织器，包括用于在其一个输入端口处接收宽带光信号的第一光学3x3耦合器，第二3×3光耦合器，在第一光学3x3耦合器的输出端口和输入端之间并行连接到端口的端口的三个差分延迟线 第二光学3x3耦合器的端口，设置在两个延迟线中的每一个中的无限脉冲响应（IIR）元件，并且其中在各个延迟线中行进的光信号在第二3x3耦合器处干扰以产生三个频移传输信道输出 信号在第二3x3耦合器的相应输出端口处。

公开(公告)号：US20080010286A1

公开(公告)日：2008-01-10

申请号：US11327644

申请日：2006-01-09

申请人： Ying Zhang ,  Jeffrey Korn

发明人： Ying Zhang ,  Jeffrey Korn

IPC分类号： G06F17/30

CPC分类号： G06F17/30884

摘要： A system receives, at a server, an action request from a client associated with bookmarks, where the bookmarks identify user designated documents. The system accesses bookmark records stored at the server based on the action request and acting on the bookmark records in a manner specified by the action request.

摘要翻译： 系统在服务器处接收来自与书签相关联的客户端的动作请求，其中书签识别用户指定的文档。 系统根据动作请求访问存储在服务器上的书签记录，并以动作请求指定的方式对书签记录进行操作。

公开(公告)号：US20070140149A1

公开(公告)日：2007-06-21

申请号：US11314616

申请日：2005-12-20

申请人： Shashidhar Gandham ,  Ying Zhang ,  Qingfeng Huang

发明人： Shashidhar Gandham ,  Ying Zhang ,  Qingfeng Huang

IPC分类号： H04L12/28

CPC分类号： H04L43/00 ,  H04L43/0888 ,  H04W84/18

摘要： One embodiment of the present invention provides a system that optimizes packet transmissions during a convergecast operation in a convergecast network. During operation, the system receives a request to perform the convergecast operation in the convergecast network. This convergecast network includes a base-station and a plurality of nodes, wherein during the convergecast operation the plurality of nodes communicate packets to the base-station. In response to the request, the system constructs a convergecast-tree, which includes the base-station and the plurality of nodes, based on hop counts from the plurality of nodes to the base-station. Next, the system linearizes the convergecast-tree so that the convergecast-tree contains a plurality of linear branches. The system then schedules packet transmission for each of the linear branches and each node in each branch based on a set of predetermined criteria to obtain a scheduled order. Finally, the system performs packet transmissions in the convergecast-tree using the scheduled order. Note that performing the convergecast operation in this way substantially optimizes the convergecast operation by reducing a total number of timeslots required to complete the convergecast operation.

摘要翻译： 本发明的一个实施例提供了一种在收敛网络中的收敛过程中优化分组传输的系统。 在运行期间，系统接收到在Convergecast网络中执行Convergecast操作的请求。 该Convergecast网络包括基站和多个节点，其中在Convergecast操作期间，多个节点向基站传送分组。 响应于该请求，系统基于从多个节点到基站的跳数来构建包括基站和多个节点的Convergecast-tree。 接下来，系统使收敛树线性化，使得收敛树包含多个线性分支。 然后，系统基于一组预定标准来调度每个分支中的每个线性分支和每个节点的分组传输以获得调度顺序。 最后，系统使用调度顺序在convergecast-tree中执行分组传输。 注意，以这种方式执行Convergecast操作通过减少完成Convergecast操作所需的时隙的总数大大优化了Convergecast操作。

公开(公告)号：US07211490B2

公开(公告)日：2007-05-01

申请号：US11083743

申请日：2005-03-18

申请人： Bruce B. Doris ,  Thomas S. Kanarsky ,  Ying Zhang ,  Huilong Zhu ,  Meikei Ieong ,  Omer Dokumaci

发明人： Bruce B. Doris ,  Thomas S. Kanarsky ,  Ying Zhang ,  Huilong Zhu ,  Meikei Ieong ,  Omer Dokumaci

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/6656 ,  H01L29/78612 ,  H01L29/78621

摘要： Described is a method for making thin channel silicon-on-insulator structures. The inventive method comprises forming a set of thin spacer abutting a gate region in a first device and a second device region; forming a raised source/drain region on either side of the gate region in the first device region and the second device region, implanting dopants of a first conductivity type into the raised source drain region in the first device region to form a first dopant impurity region, where the second device region is protected by a second device region block mask; implanting dopants of a second conductivity type into the raised source/drain region in the second device region to form a second dopant impurity region, where the first device region is protected by a first device region block mask; and activating the first dopant impurity region and the second dopant impurity region to provide a thin channel MOSFET.

摘要翻译： 描述了制造薄沟道硅绝缘体上结构的方法。 本发明的方法包括在第一装置和第二装置区域中形成邻接栅极区的一组薄间隔件; 在第一器件区域和第二器件区域中的栅极区域的任一侧上形成凸起的源极/漏极区域，将第一导电类型的掺杂剂注入到第一器件区域中的凸起的源极漏极区域中以形成第一掺杂剂杂质区域 ，其中所述第二设备区域被第二设备区域块掩码保护; 将第二导电类型的掺杂剂注入所述第二器件区域中的所述升高的源极/漏极区域中以形成第二掺杂剂杂质区域，其中所述第一器件区域被第一器件区域阻挡掩模保护; 以及激活第一掺杂杂质区和第二掺杂杂质区，以提供薄沟道MOSFET。

公开(公告)号：US20060287456A1

公开(公告)日：2006-12-21

申请号：US11447035

申请日：2006-06-06

申请人： Shiyi Yuan ,  Jianhui Luo ,  Ruoying Pu ,  Yuzhang Liu ,  Huaijiang Zhu ,  Pingmei Wang ,  Chunming Xiong ,  Ying Zhang ,  Fengluan Bai ,  Jingbo Yang

发明人： Shiyi Yuan ,  Jianhui Luo ,  Ruoying Pu ,  Yuzhang Liu ,  Huaijiang Zhu ,  Pingmei Wang ,  Chunming Xiong ,  Ying Zhang ,  Fengluan Bai ,  Jingbo Yang

IPC分类号： C08F228/02

CPC分类号： C08F222/02 ,  C08F220/06 ,  C08F220/20 ,  C08F220/56 ,  C08F220/58 ,  C08F228/02 ,  C09K8/588

摘要： A braided comb-shaped salt-resistant thickening agent for tertiary oil extraction from class I oil reservoir is disclosed. The agent is polymerized with monomer (A) and monomer (B), and monomer (A) is one or multiple water soluble non-saturated compound(s) with alkenyl chain, while monomer (B) is at least one compound with the following formula: Monomer (A) is preferably acrylamide, ethenyl pyrrolidone, 2-acrylamide-2 methylpropane sulfonic acid, and acrylic acid or the mixture of the above said compounds, and in the formula of monomer (B), A is COOH, OH, SO3H, R1 and R2 are H or C1-C12 alkyl, R3 and R4 represent C1-C12 alkyl, C1-C12 alkylaryl, C1-C12 alkyl ether or C1-C12 alkyl ester group. This thickening agent has fine water solubility and good property to thicken water medium. The polymer's molecules present a braided comb-shaped structure in water solution with fine salt-resistant performances. The agent can be used together with the water extracted from oil mines to compound the polymer for tertiary oil extraction, and the polymer solution's viscosity can reach the level of the comb-shaped salt-resistant polymer solution applied in class I oil reservoir, so it can promote the economic benefits of tertiary oil extraction from class II oil reservoir and expand the application scope.

摘要翻译： 公开了一种用于三级油从I类油藏提取的编织梳形耐盐增稠剂。 该试剂与单体（A）和单体（B）聚合，单体（A）是具有烯基链的一种或多种水溶性非饱和化合物，而单体（B）是至少一种具有下列化合物的化合物 式（A）优选为丙烯酰胺，乙烯基吡咯烷酮，2-丙烯酰胺-2-甲基丙烷磺酸，丙烯酸或上述化合物的混合物，在式（B）中，A为COOH，OH， SO 3 H，R 1和R 2均为H或C 1 -C 12烷基， C 1 -C 4烷基，R 3和R 4代表C 1 -C 12烷基，C 1〜 C 1 -C 12烷基芳基，C 1 -C 12烷基醚或C 1 -C 3烷基芳基， 烷基酯基团。 该增稠剂具有良好的水溶性和对增稠水介质的良好性能。 聚合物的分子在水溶液中呈现编织梳状结构，具有良好的耐盐性能。 该试剂可以与从油矿提取的水一起使用，将聚合物复合，用于三级油萃取，聚合物溶液的粘度可以达到应用于I级油藏的梳状耐盐聚合物溶液的水平，因此 可以促进二级油藏三级采油的经济效益，扩大应用范围。