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    Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
    61.
    发明授权
    Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it 有权
    具有氮缺乏的缺陷的硅单晶晶片及其制造方法

    公开(公告)号：US06077343A

    公开(公告)日：2000-06-20

    申请号：US318055

    申请日：1999-05-25

    申请人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

    发明人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

    IPC分类号： C30B15/02 ,  C30B15/00 ,  C20B25/02

    CPC分类号： C30B29/06 ,  C30B15/203 ,  Y10S117/917

    摘要： There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm.sup.2 /.degree. C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

    摘要翻译： 公开了一种用于制造硅单晶晶片的方法，其中在缺陷分布图中，根据CZ方法在N区域中掺杂氮，生长硅单晶，其示出了水平轴表示的缺陷分布 从晶体中心的径向距离D（mm）和纵轴表示F / G（mm 2 /℃×min）的值，其中F是单晶的拉伸速率（mm / min），G 是在硅的熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（DEG C./mm）。可以提供一种由N形成的硅单晶晶片的制造方法 在通过CZ法在晶体的整个表面中不存在富V区和富I区的条件下，可以在宽范围，高收率，高生产率下容易地控制的条件下进行。

    Method for producing a silicon single crystal having few crystal defects
    62.
    发明授权
    Method for producing a silicon single crystal having few crystal defects 有权
    具有晶体缺陷少的硅单晶的制造方法

    公开(公告)号：US6048395A

    公开(公告)日：2000-04-11

    申请号：US197130

    申请日：1998-11-20

    申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

    发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

    IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322 ,  C30B15/20

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

    摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N.sub.2 (V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N.sub.1 (V) and N.sub.2 (V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm.sup.2 /.degree.C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

    摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G值（mm2 /℃×min），其中F是单晶的拉伸速率（mm / min），G是沿着拉伸的平均晶体内梯度（DEG C./mm） 在硅熔点的温度范围内的方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀引起的吸杂能力 整个晶圆表面，硅单面 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开而没有出现OSF环的晶体晶片。

    Crystal pulling method
    64.
    发明授权
    Crystal pulling method 失效
    水晶拉法

    公开(公告)号：US5882397A

    公开(公告)日：1999-03-16

    申请号：US944869

    申请日：1997-10-06

    申请人： Eiichi Iino ,  Makoto Iida ,  Masahiko Urano ,  Masanori Kimura ,  Shozo Muraoka

    发明人： Eiichi Iino ,  Makoto Iida ,  Masahiko Urano ,  Masanori Kimura ,  Shozo Muraoka

    IPC分类号： C30B15/32 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208

    CPC分类号： C30B15/30 ,  Y10T117/1032 ,  Y10T117/1072

    摘要： In a crystal pulling method in which a growing single crystal is initially pulled by a seed chuck and subsequently pulled by lifting jig in the middle of the pulling operation, the speed Va of the seed chuck relative to the lifting jig is decreased, while the rising speed Vb of the lifting jig increases, from a first point where switching of the pulling mechanism from the seed chuck to the lifting jig is started. The total speed Vt=Vb+Va is constantly maintained at a desired pulling speed V up to a third point where the shifting of the load from the seed chuck to the lifting jig is started. Subsequently, the total speed Vt is made less than the desired pulling speed V from the third point where the shifting of the load from the seed shuck to the lifting jig is started. This enables accurate growth of a crystal.

    摘要翻译： 在晶种牵引方法中，种子卡盘最初拉长生长的单晶，随后在牵引操作的中间通过提升夹具拉动，晶种卡盘相对于提升夹具的速度Va减小，同时上升 从牵引机构从种子卡盘切换到提升夹具的第一点开始升降夹具的速度Vb增加。 总速度Vt = Vb + Va恒定地保持在期望的牵引速度V直到第三点，其中负载从种子卡盘移动到提升夹具开始。 随后，使总速度Vt小于从起子夹头到提升夹具的负载偏移开始的第三点的期望拉速V。 这使得晶体的准确生长。

    Crystal holding apparatus
    65.
    发明授权
    Crystal holding apparatus 失效
    水晶保持装置

    公开(公告)号：US5843229A

    公开(公告)日：1998-12-01

    申请号：US763889

    申请日：1996-12-11

    申请人： Masanori Kimura ,  Eiichi Iino ,  Hirotoshi Yamagishi ,  Kiyotaka Takano

    发明人： Masanori Kimura ,  Eiichi Iino ,  Hirotoshi Yamagishi ,  Kiyotaka Takano

    IPC分类号： C30B15/32 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/30 ,  Y10T117/1032 ,  Y10T117/1072

    摘要： In a crystal holding apparatus, a stepped engagement portion of a single crystal formed below a seed crystal is held by holding portions of a pair of lifting jigs so as to be pulled up. A lock mechanism consisting of a hook lever and an engagement pin is provided in order to prevent the closed lifting jigs from opening. Further, a portion of each holding portion to be contacted with a crystal is provided with a swing claw which is swingable about a horizontal pin. Accordingly, it becomes possible to reliably hold the crystal, to prevent generation of a defect in the crystal structure, and to prevent a material melt from being contaminated.

    摘要翻译： 在晶体保持装置中，通过保持一对提升夹具的一部分来保持形成在晶种下方的单晶的阶梯状接合部分，以便被拉起。 提供由钩杆和接合销构成的锁定机构，以防止闭合的起重工具打开。 此外，与晶体接触的每个保持部分的一部分设置有可围绕水平销摆动的摆动爪。 因此，可以可靠地保持晶体，以防止晶体结构中的缺陷的产生，并且防止材料熔体被污染。

    High-frequency induction heater and method of producing semiconductor single crystal using the same
    66.
    发明授权
    High-frequency induction heater and method of producing semiconductor single crystal using the same 失效
    高频感应加热器及使用其制造半导体单晶的方法

    公开(公告)号：US5792258A

    公开(公告)日：1998-08-11

    申请号：US593698

    申请日：1996-01-29

    申请人： Masanori Kimura ,  Ken Yoshizawa ,  Teruaki Fukami ,  Hirotoshi Yamagishi

    发明人： Masanori Kimura ,  Ken Yoshizawa ,  Teruaki Fukami ,  Hirotoshi Yamagishi

    IPC分类号： C30B13/20 ,  C30B29/06 ,  H01L21/208 ,  H05B6/30 ,  H05B6/36

    CPC分类号： H05B6/30 ,  C30B13/20 ,  H05B6/362 ,  Y10T117/1088

    摘要： A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals provided for supplying a high-frequency current to the associated heating coil, with the power supply terminals of one of the heating coils being disposed in a space defined between opposite ends of an adjacent heating coil disposed outside the one heating coil, wherein a pair of electrically conductive members is attached to the pair of power supply terminals, respectively, of at least an innermost one of the heating coils so as to cover a space defined between the power supply terminals of the innermost heating coil. With the induction heater thus constructed, the so-called "pulsation", i.e., microscopic resistivity fluctuations and the macroscopic resistivity distribution in the diametrical and growth directions can be improved at one time.

    摘要翻译： 一种用于通过FZ方法生长半导体单晶的高频感应加热器，包括多个彼此并置设置的高频感应加热线圈，每个高频感应加热线圈具有一对电源端子， 向相关联的加热线圈提供高频电流，其中一个加热线圈的电源端子设置在限定在设置在一个加热线圈外侧的相邻加热线圈的相对端之间的空间中，其中一对导电 至少最内侧加热线圈中的一对电源端子分别连接在一起，以覆盖在最内侧的加热线圈的电源端子之间限定的空间。 利用如此构造的感应加热器，可以一次性地改善所谓的“脉动”，即直径和生长方向的微观电阻率波动和宏观电阻率分布。

    Apparatus and a method for growing a single crystal
    67.
    发明授权
    Apparatus and a method for growing a single crystal 失效
    用于生长单晶的装置和方法

    公开(公告)号：US5788718A

    公开(公告)日：1998-08-04

    申请号：US777731

    申请日：1996-12-20

    申请人： Hirotoshi Yamagishi ,  Kiyotaka Takano ,  Eiichi Iino ,  Masanori Kimura

    发明人： Hirotoshi Yamagishi ,  Kiyotaka Takano ,  Eiichi Iino ,  Masanori Kimura

    IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  C30B15/20

    CPC分类号： C30B29/06 ,  C30B15/14 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： An apparatus for growing a single crystal which comprises a quartz crucible in a chamber for containing a semiconductor melt from which a semiconductor single crystal rod is pulled, wherein there further comprises a cylinder concentrically surrounding the single crystal rod to be pulled whose top is connected to the edge of the opening at the center of the ceiling of the chamber in an airtight fashion and whose bottom hangs down toward the semiconductor melt, and a collar which spreads open upward and outward and whose outer circumferential part extends above the top end of the quartz crucible wherein the outer circumferential part is situated such that it does not touch the top end of the quartz crucible when said quartz crucible is at its highest position.

    摘要翻译： 一种用于生长单晶的装置，其包括在用于容纳半导体单晶棒的半导体熔体的室中的石英坩埚，所述半导体熔融体从其拉出半导体单晶棒，其中还包括圆筒同心地围绕待拉的单晶棒，其顶部连接到 开口的边缘以气密的方式在室的顶部的中心处，并且其底部朝向半导体熔体向下延伸;以及轴环，其向上和向外敞开并且其外周部分在石英的顶端之上延伸 坩埚，其中外圆周部分被定位成使得当所述石英坩埚处于其最高位置时，其不接触石英坩埚的顶端。

    High-frequency induction heating coil
    70.
    发明授权
    High-frequency induction heating coil 失效
    高频感应加热线圈

    公开(公告)号：US5550354A

    公开(公告)日：1996-08-27

    申请号：US456102

    申请日：1995-05-30

    申请人： Masanori Kimura ,  Hirotoshi Yamagishi

    发明人： Masanori Kimura ,  Hirotoshi Yamagishi

    IPC分类号： C30B13/20 ,  H05B6/30 ,  H05B6/36 ,  H05B6/40

    CPC分类号： H05B6/362 ,  H05B6/30

    摘要： A high-frequency induction heating coil is provided which enables a semiconductor single crystal in the process of growth to incorporate impurities uniformly therein, permits ready adjustment of the heat distributing property, and precludes the discharge of electricity across a slit. The high-frequency induction heating coil comprises a pair of annular conductors 21 and 22, a pair of power source terminals 23a and 23b for feeding a high-frequency electric current to the pair of annular conductors 21 and 22, and a plurality of small coils 24a through 24f and 25a through 25f having the pair of annular conductors as opposite electrodes and projecting toward the axis of the pair of annular conductors extending from a first annular conductor 21 to a second annular conductor 22.

    摘要翻译： 提供了一种高频感应加热线圈，其使得在生长过程中的半导体单晶能够均匀地掺入杂质，从而允许准备好调节热分布特性，并且排除跨越狭缝的电力放电。 高频感应加热线圈包括一对环形导体21和22，一对用于将高频电流馈送到一对环形导体21和22的电源端子23a和23b，以及多个小线圈 24a至24f和25a至25f，其具有作为相对电极的一对环形导体，并且朝向从第一环形导体21延伸到第二环形导体22的一对环形导体的轴线突出。