公开(公告)号：US08030717B2

公开(公告)日：2011-10-04

申请号：US12401772

申请日：2009-03-11

申请人： Koji Akiyama ,  Wenwu Wang

发明人： Koji Akiyama ,  Wenwu Wang

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/517 ,  H01L21/28194 ,  H01L29/495 ,  H01L29/513 ,  H01L29/78

摘要： A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.

摘要翻译： 所公开的半导体器件包括形成在硅衬底上的栅极绝缘膜和形成在栅极绝缘膜中的金属栅电极，其中栅极绝缘膜包括第一绝缘膜，形成在第一绝缘膜上的第二绝缘膜和 具有比第一绝缘膜更大的介电常数和形成在第二绝缘膜上的第三绝缘膜。

公开(公告)号：US07821083B2

公开(公告)日：2010-10-26

申请号：US12137796

申请日：2008-06-12

申请人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

发明人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

IPC分类号： H01L27/88

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L29/495 ,  H01L29/513

摘要： A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diffusion layer formed by diffusing an aluminum atom or an aluminum ion to the silicon oxide film or an interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or a mixed film of hafnium oxide and aluminum oxide having a ratio of hafnium and aluminum ranging from about 2:8 to 8:2 is used as the high-k dielectric film. The heat treatment is performed at any temperature from about 500 to 1000° C. for any period of time from about 1 to 100 seconds.

摘要翻译： 半导体器件包括含有铝的介电常数大于氧化硅膜/氧化硅膜/硅衬底的介电常数的栅电极/高k电介质绝缘膜的结构，并且具有扩散层 通过热处理将铝原子或铝离子扩散到氧化硅膜或氧化硅膜和硅衬底之间的界面而形成。 作为高k电介质膜，使用层叠膜或铪和铝的比例为约2：8〜8：2的氧化铪和氧化铝的混合膜。 热处理在约500至1000℃的任何温度下进行约1至100秒的任何时间段。

公开(公告)号：US20100187992A1

公开(公告)日：2010-07-29

申请号：US12677603

申请日：2009-03-17

申请人： Koji Akiyama ,  Masaki Nishinaka ,  Koji Aoto

发明人： Koji Akiyama ,  Masaki Nishinaka ,  Koji Aoto

IPC分类号： H01J17/49 ,  H01J9/24

CPC分类号： H01J9/241 ,  C03C17/36 ,  C03C23/007 ,  H01J11/12 ,  H01J11/34

摘要： The invention is plasma display panel (1) with a plurality of pairs of display electrodes (6) and dielectric layers (8) disposed on front glass substrate (3), and it is intended to realize plasma display panel (1), wherein the stress at a surface where dielectric layer (8) of front glass substrate (3) is not disposed is a compressive stress ranging from 0.8 MPa to 2.4 MPa, the glass substrate is sufficient in strength, and the panel is almost free from breakage.

摘要翻译： 本发明是等离子体显示面板（1），其具有多个显示电极对（6）和设置在前玻璃基板（3）上的电介质层（8），并且旨在实现等离子体显示面板（1），其中， 不设置前玻璃基板（3）的电介质层（8）的表面的应力为0.8MPa〜2.4MPa的压缩应力，玻璃基板的强度足够，面板几乎没有破损。

公开(公告)号：US20090302433A1

公开(公告)日：2009-12-10

申请号：US12097888

申请日：2006-11-22

申请人： Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Koji Akiyama

发明人： Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Koji Akiyama

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/268 ,  H01L29/78

CPC分类号： H01L21/67207 ,  H01L21/268 ,  H01L21/28211 ,  H01L21/31645 ,  H01L21/318

摘要： There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.

摘要翻译： 提供了一种使用金属有机化合物材料修饰在物体表面上设置的高k电介质薄膜的方法。 该方法包括用于向物体提供形成在其表面上的高k电介质薄膜的制备方法，以及在惰性气体气氛中向高电介质薄膜施加紫外线的改进方法，同时将物体保持在预定的 温度修改高k电介质薄膜。 根据上述结构，可以从高k电介质薄膜中除去碳成分，并且整个材料可以热收缩以提高密度，从而可以防止缺陷的发生，并且可以提高膜密度 提高比电容率，从而提供高水平的电性能。

公开(公告)号：US20080308865A1

公开(公告)日：2008-12-18

申请号：US12137796

申请日：2008-06-12

申请人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

发明人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L29/495 ,  H01L29/513

摘要： A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diffusion layer formed by diffusing an aluminum atom or an aluminum ion to the silicon oxide film or an interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or a mixed film of hafnium oxide and aluminum oxide having a ratio of hafnium and aluminum ranging from about 2:8 to 8:2 is used as the high-k dielectric film. The heat treatment is performed at any temperature from about 500 to 1000° C. for any period of time from about 1 to 100 seconds.

摘要翻译： 半导体器件包括含有铝的介电常数大于氧化硅膜/氧化硅膜/硅衬底的介电常数的栅电极/高k电介质绝缘膜的结构，并且具有扩散层 通过热处理将铝原子或铝离子扩散到氧化硅膜或氧化硅膜和硅衬底之间的界面而形成。 作为高k电介质膜，使用层叠膜或铪和铝的比例为约2：8〜8：2的氧化铪和氧化铝的混合膜。 热处理在约500至1000℃的任何温度下进行约1至100秒的任何时间段。

公开(公告)号：US20070174195A1

公开(公告)日：2007-07-26

申请号：US10585462

申请日：2004-01-15

申请人： Koji Akiyama

发明人： Koji Akiyama

IPC分类号： G06Q99/00

CPC分类号： H04M1/66 ,  H04M1/7253

摘要： Security technology for information devices such as cellular phones, personal computers, and the like, and more specifically a technique capable of restricting use of or removing restrictions on the use of information devices with a low-cost configuration. A key system includes a key device and a cellular phone capable of being locked or released from the lock by the key device. An LED of the key device and an LED of the cellular phone are capable of sending data therebetween, and key information is sent from the LED to the LED. The cellular phone is locked or released from the lock based on the key information received by the LED.

摘要翻译： 用于诸如蜂窝电话，个人计算机等的信息设备的安全技术，更具体地，可以限制使用或消除对具有低成本配置的信息设备的使用的限制的技术。 钥匙系统包括能够被钥匙装置锁定或从钥匙释放的钥匙装置和蜂窝电话。 钥匙装置的LED和蜂窝电话的LED能够在其间发送数据，并且将钥匙信息从LED发送到LED。 蜂窝电话根据LED接收的密钥信息被锁定或从锁定中释放。

公开(公告)号：US07209098B2

公开(公告)日：2007-04-24

申请号：US10517065

申请日：2004-04-14

申请人： Masaaki Yamauchi ,  Takashi Aoki ,  Koji Akiyama

发明人： Masaaki Yamauchi ,  Takashi Aoki ,  Koji Akiyama

IPC分类号： G09G3/28 ,  G09G3/20

CPC分类号： H01J9/44 ,  G09G3/291 ,  G09G3/296 ,  G09G2320/043 ,  H01J2217/49

摘要： When aging is performed by applying aging voltage to a data electrode, a scan electrode, and a sustain electrode via respective inductors (301, 401, 302, 402, 303, 403) coupled to the electrodes, frequency of a ringing waveform included in an aging voltage waveform applied to the data electrode is set in a range of ½ to 2 times frequency of a ringing waveform included in an aging voltage waveform applied to the scan electrode. With the method above, the time required for aging is significantly shortened, and the aging with high efficiency in electric power is realized. Instead of using inductors (301, 302, 303) including a coil, controlling the length of lead wires (401, 402, 403) can also obtain desired inductance.

摘要翻译： 通过经由分别耦合到电极的各个电感器（301,401,302,402,303,403）向数据电极，扫描电极和维持电极施加老化电压来进行老化，包括在电极 施加到数据电极的老化电压波形被设置在施加到扫描电极的老化电压波形中包括的振铃波形的频率的1/2到2倍的范围内。 通过上述方法，老化所需的时间显着缩短，实现了电力效率高的老化。 代替使用包括线圈的电感器（301,302,303），控制引线（401,402,403）的长度也可以获得期望的电感。

公开(公告)号：US07037156B2

公开(公告)日：2006-05-02

申请号：US10469767

申请日：2002-12-20

申请人： Masaki Nishimura ,  Koji Akiyama ,  Kanako Miyashita ,  Koji Aoto ,  Keiji Horikawa ,  Masaaki Yamauchi

发明人： Masaki Nishimura ,  Koji Akiyama ,  Kanako Miyashita ,  Koji Aoto ,  Keiji Horikawa ,  Masaaki Yamauchi

IPC分类号： H01J9/00

CPC分类号： H01J9/38 ,  H01J9/261 ,  H01J9/395 ,  H01J11/12 ,  H01J11/42 ,  H01J11/52

摘要： A plasma display panel capable of realizing improvement in the characteristics thereof, such as lower discharge voltage, more stable discharge, higher luminance, higher efficiency, and longer life. Before a step of sealing the periphery of substrates, impurity gas containing CO2, H2O and CH4 is other then inert gas is adsorbed by phosphor layers. The impurity gas is released into discharge gas and while the panel is lit. This method can realize improvement in characteristics, such as lower discharge voltage, higher luminance, higher efficiency, and longer life.

摘要翻译： 能够实现其特性的提高的等离子体显示面板，例如放电电压较低，放电更稳定，亮度更高，效率更高，寿命更长。 在密封基板周边的步骤之前，含有CO 2，H 2 O和CH 4的杂质气体是另外的惰性气体被吸附 通过磷光体层。 杂质气体释放到放电气体中，同时面板点亮。 该方法可以实现诸如放电电压更低，亮度更高，效率更高，寿命更长等特性的改进。

公开(公告)号：US06972513B2

公开(公告)日：2005-12-06

申请号：US10332969

申请日：2001-07-16

申请人： Tetsuya Shiratori ,  Koji Akiyama ,  Hideo Kurokawa

发明人： Tetsuya Shiratori ,  Koji Akiyama ,  Hideo Kurokawa

IPC分类号： H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12

CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30469

摘要： An object of the present invention is to provide electron emission devices having improved electron convergence.To this end, an electron emission device of the present invention is such that a cathode electrode, an insulating layer, and a gate electrode are layered on a substrate in an order; an electron emission layer is in a first hole on the substrate penetrating from the gate electrode through the cathode electrode; an upper surface of the electron emission layer is between an upper surface of the substrate and a boundary between the cathode electrode and the insulating layer; at least one of a side surface and a lower surface except for a central area of the electron emission layer contacts the cathode electrode.By such an electron emission device, electrons are emitted mainly from the peripheral area of the electron emission layer. Accordingly, the electron convergence is improved.

摘要翻译： 本发明的目的是提供具有改善的电子会聚的电子发射装置。 为此，本发明的电子发射器件使得阴极电极，绝缘层和栅极电极按顺序层叠在基板上; 电子发射层位于衬底上的第一个孔中，从栅电极穿过阴极电极; 电子发射层的上表面在衬底的上表面和阴极和绝缘层之间的边界之间; 除了电子发射层的中心区域之外的侧表面和下表面中的至少一个与阴极接触。 通过这样的电子发射装置，电子主要从电子发射层的周边区域发射。 因此，提高了电子会聚。

公开(公告)号：US20050168126A1

公开(公告)日：2005-08-04

申请号：US11092755

申请日：2005-03-30

申请人： Masaki Nishimura ,  Koji Akiyama ,  Kanako Miyashita ,  Koji Aoto ,  Keiji Horikawa ,  Masaaki Yamauchi

发明人： Masaki Nishimura ,  Koji Akiyama ,  Kanako Miyashita ,  Koji Aoto ,  Keiji Horikawa ,  Masaaki Yamauchi

IPC分类号： H01J11/42 ,  H01J9/02 ,  H01J9/24 ,  H01J9/38 ,  H01J9/39 ,  H01J11/50 ,  H01J17/20 ,  H01J17/24 ,  H01J17/26 ,  H01J17/49 ,  H01J1/62

CPC分类号： H01J9/38 ,  H01J9/261 ,  H01J9/395 ,  H01J11/12 ,  H01J11/42 ,  H01J11/52

摘要： A plasma display panel capable of realizing improvement in the characteristics thereof, such as lower discharge voltage, more stable discharge, higher luminance, higher efficiency, and longer life. During a step of sealing the periphery of substrates or before this sealing step, impurity gas other then inert gas is adsorbed by phosphor layers. The impurity gas is released into discharge gas and the impurity is added to the discharge gas in a controlled manner while the panel is lit. This method can realize improvement in characteristics, such as lower discharge voltage, higher luminance, higher efficiency, and longer life.

摘要翻译： 能够实现其特性的提高的等离子体显示面板，例如放电电压较低，放电更稳定，亮度更高，效率更高，寿命更长。 在密封基板的周边或在该密封步骤之前，除了惰性气体之外的杂质气体被磷光体层吸附。 杂质气体释放到放电气体中，并且当面板点亮时，以受控的方式将杂质添加到放电气体中。 该方法可以实现诸如放电电压更低，亮度更高，效率更高，寿命更长等特性的改进。