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193 条记录 (耗时 0.036 秒)

    TMR or CPP structure with improved exchange properties
    61.
    发明申请
    TMR or CPP structure with improved exchange properties 有权
    具有改进的交换性能的TMR或CPP结构

    公开(公告)号：US20080316657A1

    公开(公告)日：2008-12-25

    申请号：US11820251

    申请日：2007-06-19

    申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li

    发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08 ,  Y10T428/1114

    摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.

    摘要翻译： 在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层，以通过增加Hex和Hex / Hc比来提高交换耦合性能，而不降低MR比。 插入层可以是由至少一种Co，Fe或Ni元素组成的1至15埃厚的非晶磁性层，以及至少一种具有选自B，Zr，Hf，Nb，Ta，Si ，或P，或由Cu，Ru，Mn，Hf或Cr组成的1〜5埃厚的非磁性层。 优选地，非晶磁性层中的一种或多种非晶质元素的含量小于40原子％。 可选地，插入层可以形成在AP2钉扎层内。 插入层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr。

    Uniformity in CCP magnetic read head devices
    63.
    发明申请
    Uniformity in CCP magnetic read head devices 有权
    CCP磁读头装置的均匀性

    公开(公告)号：US20080192388A1

    公开(公告)日：2008-08-14

    申请号：US11704399

    申请日：2007-02-09

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

    IPC分类号： G11B5/127

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3983 ,  Y10T428/1121

    摘要： Improved performance uniformity among CPP magnetic read devices that include an oxide barrier has been achieved by fabricating the oxide layer from at least two separately formed CCP layers. Each CCP layer is given its own PIT and IAO treatment which is of shorter duration than the PIT/IAO treatment that is used when only a single CCP layer is formed.

    摘要翻译： 通过从至少两个单独形成的CCP层制造氧化物层，已经实现了包括氧化物屏障的CPP磁读取装置之间的改进的性能均匀性。 给每个CCP层提供自己的PIT和IAO处理，其持续时间比仅在形成单个CCP层时使用的PIT / IAO处理更短。

    Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications
    64.
    发明申请
    Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications 有权
    降低CO2MnSi样Heusler合金对CPP，TMR，MRAM或其他自旋电子器件应用的订购温度的新方法

    公开(公告)号：US20070297103A1

    公开(公告)日：2007-12-27

    申请号：US11472126

    申请日：2006-06-21

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3983 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/183 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.

    摘要翻译： 公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。 因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。 插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个附加的FeCo层，以得到由FeCo / [HA / IL] N HA表示的构型，[HA / IL] N < HA / FeCo或FeCo / [HA / IL] N / HACo，其中n为整数> = 1，HA为Heusler合金层，IL为插入层。 任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。 例如，Co 2 MnSi可以与Al或FeCo靶或与Co 2 N 2 MnAl或Co 2 FeSi靶共溅射。

    Magnetoresistive spin valve sensor with tri-layer free layer
    65.
    发明申请
    Magnetoresistive spin valve sensor with tri-layer free layer 有权
    具有三层自由层的磁阻自旋阀传感器

    公开(公告)号：US20070047159A1

    公开(公告)日：2007-03-01

    申请号：US11209231

    申请日：2005-08-23

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T428/1121

    摘要： A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.

    摘要翻译： TMR传感器，CPP GMR传感器和CCP CPP GMR传感器都包括三层自由层，其形式为CoFe / CoFeB / NiFe，其中Fe的原子百分比可以在5％和90％之间变化，原子 B的百分比可以在5％和30％之间变化。 这些传感器还包括SyAP钉扎层，其在GMR传感器的情况下包括层压在Cu薄层上的至少一层CoFe。 在CCPCPP传感器中，在间隔层和自由层之间形成一层含氧化铝的偏析铜颗粒。 所有这三种结构表现出非常好的矫顽力，面电阻，GMR比和磁致伸缩的值。

    Novel hard bias design for sensor applications
    66.
    发明申请
    Novel hard bias design for sensor applications 有权

    公开(公告)号：US20060132989A1

    公开(公告)日：2006-06-22

    申请号：US11016507

    申请日：2004-12-17

    申请人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    发明人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

    Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head
    69.
    发明申请
    Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head 失效
    堆叠稳定的合成缝合CPP GMR头的制造方法

    公开(公告)号：US20050219773A1

    公开(公告)日：2005-10-06

    申请号：US10812695

    申请日：2004-03-30

    申请人： Min Li ,  Youfeng Zheng ,  Kunliang Zhang ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Youfeng Zheng ,  Kunliang Zhang ,  Simon Liao ,  Kochan Ju

    IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3272 ,  H01F41/308 ,  Y10T29/49034 ,  Y10T428/1143

    摘要： A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic coupling through the use of a longitudinal biasing formation that includes a ferromagnetic layer, denoted LBL, within the pillar portion of the sensor and a synthetic exchange coupled tri-layer within the stitched portion of the sensor. The tri-layer consists of two ferromagnetic layers, FM1 and FM2 separated by a coupling layer and magnetized longitudinally in antiparallel directions. A criterion for the magnetic thicknesses of the layers: [t(LBL)+t(FM1)]/t(FM2)=70/90 angstroms of CoFe insures a strong exchange coupling. The magnetization of the tri-layer is done in a low field anneal that does not disturb the previous magnetization of the ferromagnetic free layer.

    摘要翻译： 一种用于制造其自由层的堆叠稳定化的缝合CPP合成自旋阀传感器的方法。 该方法还可以应用于缝合隧道磁阻传感器的形成。 通过使用包括在传感器的柱部分中表示为LBL的铁磁性层的纵向偏压结构和在传感器的缝合部分内的合成交换耦合三层的静电耦合，自由层被强烈地稳定。 三层由两个铁磁层组成，FM 1和FM 2由耦合层分开，并沿反向平行方向纵向磁化。 层的磁性厚度的标准：CoFe的[t（LBL）+ t（FM 1）] / t（FM 2）= 70/90埃确保了强的交换耦合。 三层的磁化是在不影响铁磁自由层的先前磁化的低场退火中进行的。