公开(公告)号：US20090061741A1

公开(公告)日：2009-03-05

申请号：US11849724

申请日：2007-09-04

申请人： Zhihong Wang ,  Alain Duboust ,  Wei-Yung Hsu ,  Yan Wang

发明人： Zhihong Wang ,  Alain Duboust ,  Wei-Yung Hsu ,  Yan Wang

IPC分类号： B24B7/04

CPC分类号： B24B37/042 ,  H01L21/67219

摘要： A method for processing a substrate having a conductive layer disposed thereon is provided. The substrate is coupled with a planarizing head. The planarizing head is moved to a position above a polishing pad assembly. The planarizing pad is positioned relative to the polishing pad assembly without applying a voltage to the substrate. A first voltage is applied to the substrate for a first time period. A second voltage is applied to the substrate for a second time period in order to remove a portion of the conductive layer, wherein the second voltage is greater than the first voltage. In certain embodiments, applying a first voltage to the substrate further comprises forming a uniform passivation layer on the conductive layer.

摘要翻译： 提供一种处理其上设置有导电层的基板的方法。 衬底与平坦化头结合。 平坦化头移动到抛光垫组件上方的位置。 平面化焊盘相对于抛光垫组件定位，而不向衬底施加电压。 第一次施加第一电压到基板。 向基板施加第二电压第二时间段，以便去除导电层的一部分，其中第二电压大于第一电压。 在某些实施例中，向衬底施加第一电压还包括在导电层上形成均匀的钝化层。

公开(公告)号：US20090036042A1

公开(公告)日：2009-02-05

申请号：US12239725

申请日：2008-09-26

申请人： Ho Seon Shin ,  Gary C. Ettinger ,  Donald J. K. Olgado ,  Erik C. Wasinger ,  Sen-Hou Ko ,  Charles I. Dodds ,  Yufei Chen ,  Wei-Yung Hsu

发明人： Ho Seon Shin ,  Gary C. Ettinger ,  Donald J. K. Olgado ,  Erik C. Wasinger ,  Sen-Hou Ko ,  Charles I. Dodds ,  Yufei Chen ,  Wei-Yung Hsu

IPC分类号： B24B5/00

CPC分类号： B24B9/065 ,  B24B21/002 ,  B24B41/067 ,  B24B49/16 ,  B24B57/02

摘要： Methods, systems and apparatus are provided for polishing an edge of a substrate. The invention includes an apparatus adapted to apply a preset pressure to a polishing film in contact with an edge of a substrate. The apparatus includes an actuator adapted to apply a preset pressure to the polishing film; and a controller coupled to the actuator and adapted to receive a signal indicative of a condition of the edge of the substrate, and to adjust a pressure applied by the actuator to the polishing film so as to maintain the preset pressure based on the received signal. Numerous other aspects are provided.

摘要翻译： 提供了用于抛光衬底边缘的方法，系统和装置。 本发明包括适于将预设压力施加到与衬底的边缘接触的抛光膜的装置。 该装置包括致动器，其适于对抛光膜施加预设压力; 以及控制器，其耦合到所述致动器并且适于接收指示所述基板的边缘的状态的信号，并且调整由所述致动器施加到所述抛光膜的压力，以便基于所接收的信号来保持所述预设压力。 提供了许多其他方面。

公开(公告)号：US20080207093A1

公开(公告)日：2008-08-28

申请号：US12039418

申请日：2008-02-28

申请人： Sen-Hou Ko ,  Zhenhua Zhang ,  Yufei Chen ,  Wei-Yung Hsu

发明人： Sen-Hou Ko ,  Zhenhua Zhang ,  Yufei Chen ,  Wei-Yung Hsu

IPC分类号： B24B9/02 ,  B24B57/02

CPC分类号： B24B9/065 ,  B24B57/02

摘要： Methods and apparatus are provided for concurrently chemically and mechanically polishing a substrate edge. The invention includes a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid. Numerous other aspects are provided.

摘要翻译： 提供了用于同时化学和机械抛光衬底边缘的方法和装置。 本发明包括适于旋转衬底的衬底支撑件; 抛光头，其适于接触所述基底的边缘，所述抛光头包括适于将第一流体施加到所述基底的边缘的第一通道; 第二通道，其适于将第二流体引导到所述旋转基板的主表面上; 以及第三通道，其适于在基底的主表面处引导第三流体并防止第二流体稀释第一流体。 提供了许多其他方面。

公开(公告)号：US20080003931A1

公开(公告)日：2008-01-03

申请号：US11562811

申请日：2006-11-22

申请人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

发明人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

IPC分类号： B24B53/007

CPC分类号： B24B37/30 ,  B24B55/00 ,  H01L21/67219

摘要： A carrier head and a method of cleaning the carrier head are disclosed. The carrier head may have one or more openings through a sidewall that extend into a cavity within the carrier head using a fluid passage. The openings may each have a lip. The lip may have a chamfered edge. Additionally, a fluid passage may slope generally downward from the openings to the cavity. The chamfered lips and the sloped fluid passage reduce back splashing and help ensure that sufficient rinsing fluid reaches the cavity to rinse polishing fluid and particles from the carrier head. The present invention relates to carrier heads for polishing or planarizing semiconductor substrates by chemical mechanical polishing (CMP) or electrochemical mechanical polishing (ECMP). The cavities in the carrier head are cleaned by rinsing fluid (i.e., liquid or gas) from inside the cavity towards a substrate receiving side of the carrier head.

摘要翻译： 公开了载体头和清洁载体头的方法。 载体头部可以具有穿过侧壁的一个或多个开口，该侧壁使用流体通道延伸到载体头部内的空腔中。 开口可以各自具有唇缘。 唇缘可以具有倒角边缘。 此外，流体通道可以从开口大致向下倾斜到空腔。 倒角的唇缘和倾斜的流体通道减少了飞溅，并有助于确保足够的冲洗流体到达腔体以从载体头部漂洗抛光液和颗粒。 本发明涉及用于通过化学机械抛光（CMP）或电化学机械抛光（ECMP）对半导体衬底进行抛光或平面化的载体头。 载体头部中的空腔通过从空腔内部朝向承载头的基板接收侧的冲洗流体（即，液体或气体）来清洁。

公开(公告)号：US20070298689A1

公开(公告)日：2007-12-27

申请号：US11744552

申请日：2007-05-04

申请人： James Wang ,  Hung Nguyen ,  Sen-Hou Ko ,  Wei-Yung Hsu

发明人： James Wang ,  Hung Nguyen ,  Sen-Hou Ko ,  Wei-Yung Hsu

IPC分类号： B24B1/00

CPC分类号： B24B53/017 ,  B24B37/042

摘要： A method of operating a polishing apparatus in which a substrate is held with a carrier head supported by a movable support of the polishing apparatus, the substrate is brought into contact with a polishing surface at a polishing station of the polishing apparatus and the substrate is polished, the substrate is removed from the polishing surface, the support moves to transfer the carrier head to a different station of the polishing apparatus, and the polishing surface is conditioned. The conditioning overlaps with at least one of removing the substrate or moving the support.

摘要翻译： 一种操作抛光装置的方法，其中基板被保持有由抛光装置的可移动支撑件支撑的载体头，所述基板在抛光装置的抛光站处与抛光表面接触，并且所述基板被抛光 将基板从抛光表面移除，支撑件移动以将载体头转移到抛光装置的不同工位，并调整抛光表面。 调理与去除衬底或移动支撑体中的至少一个重叠。

公开(公告)号：US20070290166A1

公开(公告)日：2007-12-20

申请号：US11838512

申请日：2007-08-14

申请人： Feng Liu ,  Tianbao Du ,  Alain Duboust ,  Wei-Yung Hsu

发明人： Feng Liu ,  Tianbao Du ,  Alain Duboust ,  Wei-Yung Hsu

IPC分类号： C09K13/04

CPC分类号： C09K3/1463

摘要： Compositions and processes for producing compositions for removing conductive material, such as copper or copper alloys, from a substrate with reduced dishing and reduced insensitivity to overpolishing are provided. Embodiments include polishing compositions for electrochemical mechanical polishing of a substrate surface comprising a conductive material, the compositions having a pH of between about 3.0 to about 9.0, such as between about 4.0 to about 7.0, for example between about 5.0 to about 6.5. The polishing compositions comprise one or more inorganic based electrolytes, such as potassium phosphate monobasic, one or more chelating agents, such as citric acid, imidodiacetic acid, glycine, or salts thereof, such as ammonium citrate, one or more corrosion inhibitors, such as benzotriazole, a basic pH adjusting agent, such as ammonium hydroxide, potassium hydroxide or combinations thereof, one or more oxidizers, such as hydrogen peroxide or ammonium persulphate (APS), and a solvent, such as deionized water.

摘要翻译： 提供了用于从具有减少的凹陷的基底中去除导电材料（例如铜或铜合金）的组合物的组合物和方法，并且降低了对过度抛光的不敏感性。 实施方案包括用于包含导电材料的基底表面的电化学机械抛光的抛光组合物，所述组合物的pH为约3.0至约9.0，例如约4.0至约7.0，例如约5.0至约6.5。 抛光组合物包含一种或多种无机基电解质，例如磷酸二氢钾，一种或多种螯合剂，例如柠檬酸，亚氨基二乙酸，甘氨酸或其盐，例如柠檬酸铵，一种或多种腐蚀抑制剂，例如 苯并三唑，碱性pH调节剂，例如氢氧化铵，氢氧化钾或其组合，一种或多种氧化剂，例如过氧化氢或过硫酸铵（APS），以及溶剂如去离子水。

公开(公告)号：US20070235345A1

公开(公告)日：2007-10-11

申请号：US11400454

申请日：2006-04-07

申请人： Tianbao Du ,  Feng Liu ,  May Yu ,  Alan Duboust ,  Wei-Yung Hsu

发明人： Tianbao Du ,  Feng Liu ,  May Yu ,  Alan Duboust ,  Wei-Yung Hsu

IPC分类号： B23H5/08

CPC分类号： B23H5/08 ,  B24B37/04 ,  C25F3/02 ,  H01L21/321 ,  H01L21/32125 ,  H01L21/7684

摘要： An ECMP method that suppresses hillock formation on a substrate includes the step of buffing a substrate before a two-step electrochemical mechanical polishing process. The buffing step prevents hillocks from forming around the features of the substrate and does not interfere with the protrusion formation. The buffing step includes contacting the substrate with a polishing pad and rotating the substrate and the polishing pad in opposite directions.

摘要翻译： 抑制基板上的小丘形成的ECMP方法包括在两步电化学机械抛光工艺之前抛光基板的步骤。 抛光步骤防止小丘围绕衬底的特征形成，并且不会妨碍突起形成。 抛光步骤包括使基板与抛光垫接触，并以相反的方向旋转基板和抛光垫。

公开(公告)号：US20070215488A1

公开(公告)日：2007-09-20

申请号：US11377990

申请日：2006-03-17

申请人： Yan Wang ,  Wei-Yung Hsu ,  Alain Duboust ,  Antoine Manens

发明人： Yan Wang ,  Wei-Yung Hsu ,  Alain Duboust ,  Antoine Manens

IPC分类号： C25C7/02 ,  B23H5/06

CPC分类号： B23H5/08 ,  B24B37/046 ,  B24B37/20 ,  C25D17/10 ,  C25F7/00

摘要： A method and apparatus are provided for electroprocessing with recessed bias contact. In one embodiment, the apparatus includes a platen, a processing pad disposed on the platen and having at least a first aperture and a second aperture formed therethrough, a first electrode positioned under the processing pad and exposed to a polishing surface of the processing pad through the first aperture, wherein an upper surface of the first electrode is recessed from the polishing surface; a plurality of second electrodes exposed to the polishing surface through the second aperture, wherein upper surfaces of the second electrodes are recessed from the polishing surface, and an electrical circuit coupled to the first and second electrodes and configured to bias each of the second electrodes independently relative to the first electrode.

摘要翻译： 提供了一种用于具有凹陷偏压接触的电处理的方法和装置。 在一个实施例中，该装置包括压板，设置在压板上并具有至少第一孔和穿过其中形成的第二孔的处理垫，位于处理垫下方并暴露于处理垫的抛光表面的第一电极 所述第一孔径，其中所述第一电极的上表面从所述抛光表面凹陷; 通过第二孔暴露于抛光表面的多个第二电极，其中第二电极的上表面从抛光表面凹陷，以及耦合到第一和第二电极并被配置为独立地偏置每个第二电极的电路 相对于第一电极。

公开(公告)号：US20070044913A1

公开(公告)日：2007-03-01

申请号：US11468267

申请日：2006-08-29

申请人： Shi-Ping Wang ,  Alain Duboust ,  Antoine Manens ,  Wei-Yung Hsu ,  Jose Salas-Vernis ,  Zhihong Wang

发明人： Shi-Ping Wang ,  Alain Duboust ,  Antoine Manens ,  Wei-Yung Hsu ,  Jose Salas-Vernis ,  Zhihong Wang

IPC分类号： C03C15/00 ,  H01L21/306

CPC分类号： B24B37/32

摘要： A retaining ring for chemical mechanical polishing is described. The ring has a bottom surface with non-intersecting grooves. Alternating grooves are at opposing angles to one another.

摘要翻译： 描述了用于化学机械抛光的保持环。 环具有具有不相交槽的底面。 交替的槽彼此成相对的角度。

公开(公告)号：US20060219663A1

公开(公告)日：2006-10-05

申请号：US11338146

申请日：2006-01-23

申请人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

发明人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/32125 ,  H01L21/7684

摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.

摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。 一方面，提供了全序列电化学机械平面化技术。 在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。 此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。 抛光组合物可以以全序或混合平面化技术使用。 本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。