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    Fractionation of resins using a static mixer and a liquid-liquid centrifuge
    62.
    发明授权
    Fractionation of resins using a static mixer and a liquid-liquid centrifuge 失效

    公开(公告)号：US06512087B1

    公开(公告)日：2003-01-28

    申请号：US09698724

    申请日：2000-10-27

    申请人： Stanley F. Wanat ,  M. Dalil Rahman ,  Zhong Xiang

    发明人： Stanley F. Wanat ,  M. Dalil Rahman ,  Zhong Xiang

    IPC分类号： C08F604

    CPC分类号： C08G8/08 ,  C08G8/10 ,  G03F7/0236

    摘要： Disclosed is a method for producing low molecular weight oligomers of a film forming resin, which involves: a) providing a solution of the film forming resin in a first solvent system comprising a photoresist solvent, and optionally a water-soluble organic solvent; b) providing a second solvent system comprising at least one substantially pure C5-C8 alkane and/or at least one aromatic compound having at least one hydrocarbyl substituent and/or water/C1-C4 alcohol mixture; and performing steps c)-e) in the following order: c) mixing the solutions from a) and second solvent system from b) in a static mixer for a time period sufficient for efficient mixing; d) feeding the mixture from c) and second solvent system from b) through two separate inlet ports into a liquid/liquid centrifuge, one of the inlet ports feeding the mixture from c), the second inlet port feeding the second solvent system from b) into said liquid/liquid centrifuge at a feed ratio of the mixture from c) to the second solvent system from b) of from about 10/90 to about 90/10, at a temperature of from about 0° C. up to maximum temperature that is less than the boiling point of the lowest boiling solvent in the first or second solvent system; e) rotating the mixture from step d) inside the liquid/liquid centrifuge at a rotational speed sufficient to separate the mixture from step d) into two separate phases, and then collecting the two separate phases, each from two separate outlet ports, into two separate containers, wherein the heavier phase (H) comprises a fractionated film forming resin comprising higher molecular weight fractions of the film forming resin and the lighter phase (L) comprises low molecular weight oligomers of the film forming resin. The present invention also provides a method for producing a photoresist composition, and method for producing a microelectronic device using the aforementioned fractionated resin or low molecular weight oligomers of the film forming resin.

    Method of reducing metal ion content of film-forming resins using a liquid/liquid centrifuge
    63.
    发明授权
    Method of reducing metal ion content of film-forming resins using a liquid/liquid centrifuge 失效
    使用液/液离心机降低成膜树脂的金属离子含量的方法

    公开(公告)号：US06297352B1

    公开(公告)日：2001-10-02

    申请号：US09597440

    申请日：2000-06-20

    申请人： Stanley F. Wanat ,  M. Dalil Rahman

    发明人： Stanley F. Wanat ,  M. Dalil Rahman

    IPC分类号： C08F604

    CPC分类号： B01J45/00 ,  G03F7/0236

    摘要： The present invention provides a method for reducing the metal ion content of a film-forming resin, said method comprising the steps of: a) providing a solution of the film-forming resin in a water-immiscible solvent system comprising at least one water-immiscible solvent; b) providing a washing solution comprising water or a dilute solution of a water-soluble metal ion chelating agent; c) feeding the solutions from a) and b) through two separate inlet ports into a liquid/liquid centrifuge, one of said inlet ports feeding solution from a), the second inlet port feeding the solution from b) into said liquid/liquid centrifuge at a feed rate ratio of the solution from a) to that from b) from about 10/90 to about 90/10, at a temperature of from about 0° C. up to a maximum temperature that is less than the boiling point of the lowest boiling water-immiscible solvent in the water-immiscible solvent system; and d) rotating the mixture from step c) inside said liquid/liquid centrifuge at a rotational speed sufficient to separate the mixture from step c) into two separate phases, and then collecting the two separate phases, each through a separate outlet port, into two separate containers, wherein the heavier phase (H) comprises the film-forming resin having a reduced metal ion content in the water-immiscible solvent system, with a minor amount of water; and the lighter phase (L) comprises: 1) an aqueous solution of metal ions and a minor amount of a mixture of 2) the water-immiscible solvent system, and 3) the film-forming resin. The present invention also provides for a method for producing a photoresist composition and a method for producing a microelectronic device utilizing a film-forming resin produced by the aforementioned method.

    摘要翻译： 本发明提供了一种降低成膜树脂的金属离子含量的方法，所述方法包括以下步骤：a）将成膜树脂的溶液提供在与水不混溶的溶剂体系中，该溶液体系包含至少一种水 - 不混溶溶剂; b）提供包含水或水溶性金属离子螯合剂的稀溶液的洗涤溶液; c）将来自a）和b）的溶液通过两个单独的入口端口进入液体/液体离心机，所述入口端口中的一个从a）供给溶液，将来自b）的溶液供给到所述液体/液体离心机 以a）至b）的溶液的进料速率比为约10/90至约90/10，温度为约0℃至最低温度为低于 与水不混溶的溶剂体系中最低沸水不溶混溶剂; 以及d）将所述液体/液体离心机内的步骤c）中的混合物以足以将混合物从步骤c）分离成两个分开的相的旋转速度旋转，然后通过单独的出口端收集两个分离的相， 两个单独的容器，其中较重的相（H）包括在与水不混溶的溶剂体系中具有降低的金属离子含量的成膜树脂，少量的水; 轻相（L）包括：1）金属离子的水溶液和少量的2）水不混溶溶剂体系的混合物，和3）成膜树脂。 本发明还提供一种光致抗蚀剂组合物的制造方法和利用上述方法制造的成膜树脂的微电子器件的制造方法。

    Antireflective coating material for photoresists
    64.
    发明授权
    Antireflective coating material for photoresists 失效
    用于光致抗蚀剂的抗反射涂层材料

    公开(公告)号：US6106995A

    公开(公告)日：2000-08-22

    申请号：US373319

    申请日：1999-08-12

    申请人： Sunit S. Dixit ,  M. Dalil Rahman ,  Dinesh N. Khanna ,  Joseph E. Oberlander ,  Dana L. Durham

    发明人： Sunit S. Dixit ,  M. Dalil Rahman ,  Dinesh N. Khanna ,  Joseph E. Oberlander ,  Dana L. Durham

    IPC分类号： G03F7/004 ,  C09D5/00 ,  C09D179/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03C1/492

    CPC分类号： G03F7/091

    摘要： The present invention relates to an antireflective coating composition comprising an admixture of:a) a polymer defined by the following structure: ##STR1## where, R.sub.1 & R.sub.2 are independently hydrogen, or C.sub.1 to C.sub.5 alkylR.sub.3 is a methyl, ethyl, propyl or butyl groupR.sub.4 -R.sub.7 are independently hydrogen, or C.sub.1 to C.sub.5 alkyln=10 to 50,000(b) a fluorine-containing, sparingly water-soluble (0.1%-10% by weight in water) organic C.sub.3 -C.sub.13 aliphatic carboxylic acid;(c) a non-metallic hydroxide; and(d) a solvent.The invention also relates to a method for producing such an antireflective coating composition and to a method for producing a microelectronic device using such an antireflective coating composition in conjunction with a photoresist composition.

    摘要翻译： 本发明涉及一种抗反射涂料组合物，其包含以下混合物的混合物：a）由以下结构定义的聚合物：其中R1和R2独立地为氢，或C1至C5烷基，R3为甲基，乙基，丙基或丁基R4 -R7独立地为氢，或C 1至C 5烷基n = 10至50,000（b）含氟的微水溶性（0.1重量％-10重量％的水）有机C 3 -C 13脂族羧酸; （c）非金属氢氧化物; 和（d）溶剂。 本发明还涉及一种制备这种抗反射涂料组合物的方法和一种使用这种抗反射涂料组合物与光致抗蚀剂组合物一起生产微电子器件的方法。

    Metal ion reduction in novolak resins and photoresists
    69.
    发明授权
    Metal ion reduction in novolak resins and photoresists 失效
    酚醛清漆树脂和光致抗蚀剂中的金属离子还原

    公开(公告)号：US5594098A

    公开(公告)日：1997-01-14

    申请号：US272962

    申请日：1994-07-11

    申请人： M. Dalil Rahman ,  Dana L. Durham

    发明人： M. Dalil Rahman ,  Dana L. Durham

    IPC分类号： C08G8/00 ,  C08G8/08 ,  C08G8/10 ,  G03F7/023 ,  H01L21/027 ,  C08F6/00 ,  G03C1/52

    CPC分类号： C08G8/08 ,  G03F7/0236

    摘要： The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.

    摘要翻译： 本发明提供了利用处理的离子交换树脂生产具有非常低的金属离子含量的水不溶性碱性水溶性酚醛清漆树脂的方法。 还提供了一种用于生产具有来自这种酚醛清漆树脂的非常低水平的金属离子并且使用这种光致抗蚀剂组合物制造半导体器件的光致抗蚀剂组合物的方法。

    Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation
    70.
    发明授权
    Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation 失效
    用于半导体器件形成的底部抗反射涂层中的金属离子还原

    公开(公告)号：US5580700A

    公开(公告)日：1996-12-03

    申请号：US460611

    申请日：1995-06-02

    申请人： M. Dalil Rahman

    发明人： M. Dalil Rahman

    IPC分类号： G03F7/11 ,  C09D133/02 ,  C09D135/08 ,  C09D161/04 ,  C09D161/06 ,  G03F1/14 ,  G03F7/09 ,  H01L21/027 ,  G03C1/83

    CPC分类号： G03F7/091

    摘要： The present invention provides a bottom anti-reflective coating compositions having a very low level of metal ions and a process for producing such compositions utilizing specially treated ion exchange resins. The present invention also provides photoresists produced using such bottom anti-reflective coating compositions and a method for producing semiconductor devices using such photoresists.

    摘要翻译： 本发明提供了具有非常低水平的金属离子的底部抗反射涂层组合物和利用特殊处理的离子交换树脂制备这种组合物的方法。 本发明还提供使用这种底部抗反射涂层组合物制备的光致抗蚀剂以及使用这种光致抗蚀剂制造半导体器件的方法。