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    Memory Systems and Memory Programming Methods
    61.
    发明申请
    Memory Systems and Memory Programming Methods 审中-公开

    公开(公告)号：US20160172031A1

    公开(公告)日：2016-06-16

    申请号：US15050248

    申请日：2016-02-22

    Applicant: Micron Technology, Inc.

    Inventor： Emiliano Faraoni ,  Scott E. Sills ,  Alessandro Calderoni ,  Adam Johnson

    IPC: G11C13/00

    CPC classification number: G11C13/0064 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0066 ,  G11C2013/0071 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

    Abstract: Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

    RESISTIVE MEMORY SENSING
    64.
    发明申请
    RESISTIVE MEMORY SENSING 审中-公开
    电阻记忆感应

    公开(公告)号：US20150255153A1

    公开(公告)日：2015-09-10

    申请号：US14719053

    申请日：2015-05-21

    Applicant: Micron Technology, Inc.

    Inventor： D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Lei Bi ,  Adam D. Johnson ,  Brent Keeth ,  Alessandro Calderoni ,  Scott E. Sills

    IPC: G11C13/00

    CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C13/0069 ,  G11C2013/0047 ,  G11C2013/0057

    Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

    Abstract translation: 本公开包括用于感测电阻式存储单元的装置和方法。 许多实施例包括对存储器单元执行感测操作以确定与存储器单元相关联的当前值，将编程信号施加到存储器单元，以及基于与存储器单元相关联的当前值来确定存储器单元的数据状态 在施加编程信号之前应用编程信号的存储单元和与存储器单元相关联的当前值。

    APPARATUS AND METHODS FOR FORMING A MEMORY CELL USING CHARGE MONITORING
    65.
    发明申请
    APPARATUS AND METHODS FOR FORMING A MEMORY CELL USING CHARGE MONITORING 有权
    用于形成使用充电监测的存储器单元的装置和方法

    公开(公告)号：US20150124517A1

    公开(公告)日：2015-05-07

    申请号：US14588593

    申请日：2015-01-02

    Applicant: Micron Technology, Inc.

    Inventor： Brent Keeth ,  Durai Vishak Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Adam D. Johnson ,  Scott E. Sills ,  Alessandro Calderoni

    IPC: G11C13/00

    CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0021 ,  G11C13/0064 ,  G11C2013/0066 ,  G11C2013/0071 ,  G11C2013/0076 ,  G11C2013/0083 ,  H01L22/14

    Abstract: Apparatus and methods of forming a memory cell are described. In one such method, a forming charge applied to a memory cell, such as a Resistive RAM (RRAM) memory cell, is monitored to determine the progress of the forming the cell. If the cell is consuming charge too slowly, a higher voltage can be applied. If the cell is consuming charge too quickly, a lower voltage can be applied. The charge may be monitored by charging a capacitor to a certain level, then monitoring the discharge rate of the capacitor though the cell. The monitoring may use comparators to measure the charge. The monitoring may also use an analog to digital converter to perform the monitoring.

    Abstract translation: 描述形成存储器单元的装置和方法。 在一种这样的方法中，监视施加到诸如电阻RAM（RRAM）存储单元的存储单元的成形电荷，以确定形成单元的进程。 如果电池消耗电荷太慢，则可以施加更高的电压。 如果电池消耗电荷太快，则可以施加较低的电压。 可以通过将电容器充电到一定水平来监测电荷，然后通过电池监测电容器的放电速率。 监控可以使用比较器来测量电荷。 监视还可以使用模数转换器来执行监视。

    APPARATUS AND METHODS FOR FORMING A MEMORY CELL USING CHARGE MONITORING
    67.
    发明申请
    APPARATUS AND METHODS FOR FORMING A MEMORY CELL USING CHARGE MONITORING 有权
    用于形成使用充电监测的存储器单元的装置和方法

    公开(公告)号：US20140233298A1

    公开(公告)日：2014-08-21

    申请号：US13772056

    申请日：2013-02-20

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Brent Keeth ,  Durai Vishak Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Adam D. Johnson ,  Scott E. Sills ,  Alessandro Calderoni

    IPC: G11C13/00

    CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0021 ,  G11C13/0064 ,  G11C2013/0066 ,  G11C2013/0071 ,  G11C2013/0076 ,  G11C2013/0083 ,  H01L22/14

    Abstract: Apparatuses and methods of forming a memory cell is described. In one such method, a forming charge applied to a memory cell, such as a Resistive RAM (RRAM) memory cell, is monitored to determine the progress of the forming the cell. If the cell is consuming charge too slowly, a higher voltage can be applied. If the cell is consuming charge too quickly, a lower voltage can be applied. The charge may be monitored by charging a capacitor to a certain level, then monitoring the discharge rate of the capacitor though the cell. The monitoring may use comparators to measure the charge. The monitoring may also use an analog to digital converter to perform the monitoring.

    Abstract translation: 描述形成存储器单元的装置和方法。 在一种这样的方法中，监视施加到诸如电阻RAM（RRAM）存储单元的存储单元的成形电荷，以确定形成单元的进程。 如果电池消耗电荷太慢，则可以施加更高的电压。 如果电池消耗电荷太快，则可以施加较低的电压。 可以通过将电容器充电到一定水平来监测电荷，然后通过电池监测电容器的放电速率。 监控可以使用比较器来测量电荷。 监视还可以使用模数转换器来执行监视。

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