公开(公告)号：US20160308123A1

公开(公告)日：2016-10-20

申请号：US14687317

申请日：2015-04-15

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Witold Kula ,  Gurtej S. Sandhu

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.

Abstract translation: 形成磁性隧道结的磁极的方法包括在形成的磁极的导电材料上形成非磁性的含MgO材料。 在包含MgO的材料上形成无定形金属。 包含Co和Fe的非晶磁性电极材料形成在无定形金属上。 无定形磁极材料不含B.直接与非晶磁性电极材料形成包含MgO的非磁性隧道绝缘体材料。 隧道绝缘体材料没有B.在形成隧道绝缘体材料之后，在至少约250℃的温度下对包含无定形Co和Fe的磁性电极材料进行退火以形成含Co和Fe的结晶的电极材料 从隧道绝缘体材料的包含MgO的表面。 含有Co和Fe的结晶的电极材料不含B。公开了其它方法和非方法的实施方案。

公开(公告)号：US20160211446A1

公开(公告)日：2016-07-21

申请号：US15084688

申请日：2016-03-30

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Witold Kula

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Spin transfer torque memory cells and methods of forming the same are described herein. As an example, spin transfer torque memory cells may include an amorphous material, a storage material formed on the amorphous material, wherein the storage material is substantially boron free, an interfacial perpendicular magnetic anisotropy material formed on the storage material, a reference material formed on the interfacial perpendicular magnetic anisotropy material, wherein the reference material is substantially boron free, a buffer material formed on the reference material and a pinning material formed on the buffer material.

公开(公告)号：US20160211440A1

公开(公告)日：2016-07-21

申请号：US14597903

申请日：2015-01-15

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Witold Kula ,  Suresh Ramarajan

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/12

Abstract: A semiconductor device comprises an array of magnetic cell structures each comprising a magnetic tunnel junction over an electrode on a substrate. Each of the magnetic tunnel junctions includes a magnetic material over the substrate, a first tunnel barrier material over the magnetic material, a second tunnel barrier material over the annealed first tunnel barrier material, and another magnetic material over the second tunnel barrier material. Each magnetic tunnel junction is configured to exhibit a tunnel magnetoresistance greater than or equal to about 180% at a resistance area product of less than about 8 ohm μm2. The semiconductor device also includes another electrode over the another magnetic material. Semiconductor devices including the magnetic tunnel junctions, methods of forming the magnetic tunnel junctions, and methods of forming semiconductor devices including the magnetic tunnel junctions are disclosed.

Abstract translation: 半导体器件包括磁性单元结构的阵列，每个磁性单元结构包括在衬底上的电极上的磁性隧道结。 每个磁性隧道结包括在该基底上的磁性材料，在该磁性材料上方的第一隧道阻挡材料，该退火的第一隧道屏障材料上方的第二隧道阻挡材料，以及该第二隧道屏障材料上的另一种磁性材料。 每个磁性隧道结被配置为在小于约8欧姆·μm2的电阻面积产生大于或等于约180％的隧道磁阻。 半导体器件还包括在另一磁性材料上的另一电极。 公开了包括磁隧道结的半导体器件，形成磁隧道结的方法，以及形成包括磁性隧道结的半导体器件的方法。

公开(公告)号：US09356229B2

公开(公告)日：2016-05-31

申请号：US14728268

申请日：2015-06-02

Applicant: Micron Technology, Inc.

Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

IPC: H01L43/08 ,  H01L27/22 ,  H01L29/66 ,  H01L29/82 ,  G11C11/16 ,  H01F10/32 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

公开(公告)号：US20150303374A1

公开(公告)日：2015-10-22

申请号：US14448343

申请日：2014-07-31

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Witold Kula

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Spin transfer torque memory cells and methods of forming the same are described herein. As an example, spin transfer torque memory cells may include an amorphous material, a storage material formed on the amorphous material, wherein the storage material is substantially boron free, an interfacial perpendicular magnetic anisotropy material formed on the storage material, a reference material formed on the interfacial perpendicular magnetic anisotropy material, wherein the reference material is substantially boron free, a buffer material formed on the reference material and a pinning material formed on the buffer material.

Abstract translation: 旋转传递扭矩存储单元及其形成方法在此描述。 作为示例，自旋转移力矩存储单元可以包括无定形材料，形成在非晶材料上的储存材料，其中储存材料基本上不含硼，形成在存储材料上的界面垂直磁各向异性材料， 界面垂直磁各向异性材料，其中参考材料基本上不含硼，形成在参考材料上的缓冲材料和形成在缓冲材料上的钉扎材料。

公开(公告)号：US20150001654A1

公开(公告)日：2015-01-01

申请号：US13932497

申请日：2013-07-01

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Witold Kula

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be include in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.

Abstract translation: 磁性电池芯包括靠近磁性区域（例如，自由区域或固定区域）的至少一个应力源结构。 磁性区域可以由表现出磁致伸缩性的磁性材料形成。 在切换期间，应力器结构可能经受通过磁性电池芯的编程电流。 响应于当前的应力结构可能会改变大小。 由于尺寸变化，应力结构可能对磁性区域施加应力，从而改变其磁各向异性。 在一些实施例中，磁性区域的MA强度可能在切换期间降低，从而可以使用较低的编程电流来切换自由区域的磁性取向。 在一些实施例中，多个应激源结构可以包括在磁性细胞核心中。 还公开了制造和操作的方法以及相关的装置结构和系统。

公开(公告)号：US20240339543A1

公开(公告)日：2024-10-10

申请号：US18743686

申请日：2024-06-14

Applicant: Micron Technology, Inc.

Inventor： Witold Kula ,  Gurtej S. Sandhu ,  John A. Smythe

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H10B99/00

CPC classification number: H01L29/78642 ,  H01L21/02178 ,  H01L21/02488 ,  H01L21/02568 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/78696 ,  H10B99/00 ,  H01L21/0262

Abstract: An apparatus including an array of memory cells comprising transistors is disclosed. One or more of the transistors comprise a crystalline material extending substantially transverse to a base material. A gate dielectric material is adjacent to the crystalline material. A two-dimensional material of a channel region directly intervenes between the gate dielectric material and the crystalline material. The gate dielectric material overlies additional portions of the two-dimensional material of the channel region. One or more gates are adjacent to the gate dielectric material. An electronic device is also disclosed comprising one or more of the transistors. The one or more of the transistors comprise a channel region, a gate dielectric region adjacent to the channel region, and one or more gates adjacent to the gate dielectric region. The channel region comprises opposing sidewalls separated by a pillar structure and substantially perpendicular to a base material.

公开(公告)号：US10515996B2

公开(公告)日：2019-12-24

申请号：US15877064

申请日：2018-01-22

Applicant: Micron Technology, Inc.

Inventor： Witold Kula ,  Wayne I. Kinney ,  Gurtej S. Sandhu

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

公开(公告)号：US10439131B2

公开(公告)日：2019-10-08

申请号：US14597903

申请日：2015-01-15

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Witold Kula ,  Suresh Ramarajan

IPC: H01L43/12 ,  H01L43/08 ,  G11C11/16

Abstract: A semiconductor device comprises an array of magnetic cell structures each comprising a magnetic tunnel junction over an electrode on a substrate. Each of the magnetic tunnel junctions includes a magnetic material over the substrate, a first tunnel barrier material over the magnetic material, a second tunnel barrier material over the annealed first tunnel barrier material, and another magnetic material over the second tunnel barrier material. Each magnetic tunnel junction is configured to exhibit a tunnel magnetoresistance greater than or equal to about 180% at a resistance area product of less than about 8 ohm μm2. The semiconductor device also includes another electrode over the another magnetic material. Semiconductor devices including the magnetic tunnel junctions, methods of forming the magnetic tunnel junctions, and methods of forming semiconductor devices including the magnetic tunnel junctions are disclosed.

公开(公告)号：US20190305211A1

公开(公告)日：2019-10-03

申请号：US16434634

申请日：2019-06-07

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.