公开(公告)号：US20080135883A1

公开(公告)日：2008-06-12

申请号：US11980359

申请日：2007-10-31

申请人： Marten Armgarth ,  Miaioxiang M. Chen ,  David A. Nilsson ,  Rolf M. Berggren ,  Thomas Kugler ,  Tommi M. Remonen ,  Robert Forchheimer

发明人： Marten Armgarth ,  Miaioxiang M. Chen ,  David A. Nilsson ,  Rolf M. Berggren ,  Thomas Kugler ,  Tommi M. Remonen ,  Robert Forchheimer

IPC分类号： H01L27/10

CPC分类号： H01L51/0508 ,  B82Y10/00 ,  C09K9/02 ,  G02F1/163 ,  G02F2001/1635 ,  G02F2202/022 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/15 ,  H01L21/31604 ,  H01L27/283 ,  H01L28/56 ,  H01L51/0037 ,  H01L51/0097 ,  H01L51/052 ,  H01L2924/0002 ,  H01L2924/00

摘要： A circuitry for differential amplifying, logical inversion, NAND and/or NOR operations is provided, which includes at least one depletion mode transistor having JFET characteristics. A method for determining the properties of an electrochemical circuitry is provided, including at least one semi-finished transistor, by applying a solidified electrolyte to selected sets of electrochemically active transistor elements is also provided.

摘要翻译： 提供了用于差分放大，逻辑反相，NAND和/或NOR运算的电路，其包括至少一个具有JFET特性的耗尽型晶体管。 还提供了一种用于确定电化学电路的性质的方法，包括至少一个半成品晶体管，通过将凝固的电解质施加到选定的电化学活性晶体管元件组。

公开(公告)号：US20080128687A1

公开(公告)日：2008-06-05

申请号：US11980633

申请日：2007-10-31

申请人： Marten Armgarth ,  Miaioxiang M. Chen ,  David A. Nilsson ,  Rolf M. Berggren ,  Thomas Kugler ,  Tommi M. Remonen ,  Robert Forchheimer

发明人： Marten Armgarth ,  Miaioxiang M. Chen ,  David A. Nilsson ,  Rolf M. Berggren ,  Thomas Kugler ,  Tommi M. Remonen ,  Robert Forchheimer

IPC分类号： H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0508 ,  B82Y10/00 ,  C09K9/02 ,  G02F1/163 ,  G02F2001/1635 ,  G02F2202/022 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/15 ,  H01L21/31604 ,  H01L27/283 ,  H01L28/56 ,  H01L51/0037 ,  H01L51/0097 ,  H01L51/052 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by way of a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having ability to electrochemically altering its redox state, such that a transistor channel of the transistor is defined thereby.

摘要翻译： 提供了生产电化学晶体管器件的方法，其中固化的电解质被布置成与至少一部分有机材料直接接触，所述有机材料具有通过其氧化还原状态的改变而电化学地改变其导电性的能力，使得源 晶体管的接触和漏极接触可以通过施加到栅电极的电压来控制。 还提供一种电化学晶体管器件，其中在凝固的电解质和具有电化学改变其氧化还原状态的能力的有机材料之间提供离子隔离材料，从而限定晶体管的晶体管沟道。

公开(公告)号：US20080035915A1

公开(公告)日：2008-02-14

申请号：US11517449

申请日：2006-09-08

申请人： David Russell ,  Thomas Kugler ,  Christopher Newsome ,  Shunpu Ll

发明人： David Russell ,  Thomas Kugler ,  Christopher Newsome ,  Shunpu Ll

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0012 ,  H01L51/0004 ,  H01L51/0036 ,  H01L51/0053 ,  H01L51/0545 ,  H01L51/0566

摘要： According to a first aspect, the present invention provides a method for forming a semiconductor film comprising a first step of providing a solution comprising a first organic semiconductor and a second organic semiconductor on a surface of a substrate. The solution is then dried to form the semiconductor film so that it comprises discrete domains of the first organic semiconductor in a matrix of the second organic semiconductor which electrically connects adjacent domains of the first organic semiconductor. The first and second semiconductors are of the same conductivity type. The mobility of charge carriers in the domains of the first organic semiconductor is higher than the mobility of charge carriers in the matrix of the second organic semiconductor. In alternative aspects, the present invention provides methods forming similar semiconductor film products but in which a solution of the first organic semiconductor is deposited separately from the second organic semiconductor and dried to form discrete domains. The present invention also provides a semiconductor film such as produced by the above methods in which both the first and second organic semiconductors are thiophenes.

摘要翻译： 根据第一方面，本发明提供了一种形成半导体膜的方法，其包括在衬底的表面上提供包含第一有机半导体和第二有机半导体的溶液的第一步骤。 然后将溶液干燥以形成半导体膜，使得其包含第一有机半导体的第一有机半导体的相邻区域中的第二有机半导体的矩阵中的离散区域。 第一和第二半导体具有相同的导电类型。 第一有机半导体的区域中的载流子的迁移率高于第二有机半导体的基体中的电荷载流子的迁移率。 在替代方案中，本发明提供了形成类似的半导体膜产品的方法，但是其中第一有机半导体的溶液与第二有机半导体分开沉积并干燥以形成离散的畴。 本发明还提供了通过上述方法制备的半导体膜，其中第一和第二有机半导体都是噻吩。

公开(公告)号：US07271098B2

公开(公告)日：2007-09-18

申请号：US11102711

申请日：2005-04-11

申请人： Shunpu Li ,  Christopher Newsome ,  Thomas Kugler ,  David Russell

发明人： Shunpu Li ,  Christopher Newsome ,  Thomas Kugler ,  David Russell

IPC分类号： H01L21/302

CPC分类号： H01L51/0023 ,  H01L51/0022 ,  H01L51/0037 ,  H01L51/0541

摘要： Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1. The method comprises the steps of: creating a first layer of patterning material 2 on the substrate whilst leaving areas of the substrate exposed to define said desired pattern; printing a suspension comprising particles of the electronically functional material 3 in a liquid dispersant, to which the patterning material is impervious, on the patterning material and the exposed substrate; removing at least some of the liquid dispersant from the suspension to consolidate the particles; and applying a first solvent to said consolidated particles which is capable of solubilizing the patterning material 2 and to which the consolidated particles are pervious so that the patterning material is removed from the substrate 1 together with any overlying electronically functional material 3.

摘要翻译： 提供了在基板1上形成电子功能材料3的期望图案的方法。 该方法包括以下步骤：在衬底上创建图案材料材料2的第一层，同时使衬底的区域暴露以限定所述期望图案; 将包含电子功能材料3的颗粒的悬浮液印刷在图案形成材料和暴露的基底上的图案形成材料不可渗透的液体分散剂中; 从悬浮液中除去至少一些液体分散剂以固结颗粒; 以及将第一溶剂施加到能够溶解图案形成材料2并且固结的颗粒可渗透的所述固结颗粒，使得图案材料与任何上覆的电子功能材料3一起从基板1移除。

公开(公告)号：US20070065570A1

公开(公告)日：2007-03-22

申请号：US11517443

申请日：2006-09-08

申请人： Thomas Kugler ,  Shunpu Li ,  Christopher Newsome ,  David Russell

发明人： Thomas Kugler ,  Shunpu Li ,  Christopher Newsome ,  David Russell

IPC分类号： B05D5/12 ,  B05D1/12 ,  B05D5/00

CPC分类号： B41C1/10 ,  B41C1/1066 ,  B41N1/08 ,  B41N1/14 ,  H01L51/0004 ,  H05K3/1208 ,  H05K3/386 ,  H05K2201/0209 ,  H05K2201/0212 ,  H05K2203/1173

摘要： The present invention relates to substrates having wetting contrasts wherein the surface area of at least one part of the wetting contrast is rough because it is derived from a surface polymer layer comprising particles embedded therein. This surface roughening is important because it affects the surface properties of the substrate, and in particular the hydrophilicity and/or oleophilicity of the surface. According to a first method of the present invention, a substrate having a surface which comprises adjacent areas of different hydrophilicity and/or oleophilicity is produced. The method comprises forming a pattern of a first composition comprising a polymer matrix and particles of a material other than the polymer matrix on a substrate precursor. The present invention further relates to a method of producing a microelectronic component which involves depositing an electronically functional material onto a substrate having a wetting contrast.

摘要翻译： 本发明涉及具有湿润对比度的衬底，其中至少一部分润湿对比度的表面积是粗糙的，因为它是从包含嵌入其中的颗粒的表面聚合物层得到的。 这种表面粗糙化是重要的，因为它影响基材的表面性质，特别是表面的亲水性和/或亲油性。 根据本发明的第一种方法，制造了具有包含不同亲水性和/或亲油性相邻区域的表面的基材。 该方法包括在基底前体上形成包含聚合物基质和不同于聚合物基质的材料的颗粒的第一组合物的图案。 本发明还涉及一种制造微电子部件的方法，该方法包括将电子功能材料沉积到具有润湿对比度的基底上。

公开(公告)号：US5617828A

公开(公告)日：1997-04-08

申请号：US675662

申请日：1996-07-03

申请人： Peter Kuegel ,  Tolunay Demir ,  Thomas Kugler

发明人： Peter Kuegel ,  Tolunay Demir ,  Thomas Kugler

IPC分类号： F02M55/00 ,  F02M55/02 ,  F02M61/16

CPC分类号： F02M55/005 ,  F02M55/02

摘要： A fuel injection valve for internal combustion engines, with a high pressure connection, which feeds laterally into a valve retaining body inserted into the engine housing, which connection is constituted by a pressure pipe connector which is inserted into a through bore in the housing. The pressure pipe connector is connected to a pressure line by means of a male pipe fitting and is axially braced by this fitting against a seat on the circumference face of the valve retaining body. In order to limit the clamping forces of the high pressure connection introduced radially onto the valve retaining body, a region is provided between the force introduction onto the pressure pipe connector and its contact with the valve retaining body, which region plastically deforms from a particular clamping force onward.

摘要翻译： 一种用于内燃机的燃料喷射阀，其具有高压连接，其侧向地进入插入到发动机壳体中的阀保持体，该连接由插入壳体中的通孔中的压力管连接器构成。 压力管连接器通过公管配件连接到压力管线，并且通过该配件轴向地支撑在阀保持体的圆周面上的座上。 为了限制径向引入到阀保持体上的高压连接的夹持力，在压力管连接器上的力引入到与阀保持体的接触之间设置一个区域，该区域从特定的夹紧件塑性变形 力量向前

公开(公告)号：US09054328B2

公开(公告)日：2015-06-09

申请号：US14129275

申请日：2012-06-21

申请人： Thomas Kugler ,  Richard J. Wilson

发明人： Thomas Kugler ,  Richard J. Wilson

IPC分类号： H01L29/08 ,  H01L51/50 ,  H01L51/52 ,  H01L51/00

CPC分类号： H01L51/5004 ,  H01L51/0042 ,  H01L51/5064 ,  H01L51/5088 ,  H01L51/5215

摘要： The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL.

摘要翻译： 本发明提供了一种在包括阳极的器件中调整过渡金属氧化物（TMO）到半导体空穴传输层材料（HTL材料）的HOMO的电子受体强度的方法，所述器件包括沉积在 所述阳极和沉积在所述TMO层上的所述HTL材料层包括：在所述阳极上沉积包含所述TMO的前体的溶液，其中所述前体溶液具有选择的pH，使得所述溶液的所述TMO的受体强度 是将前体调整为所述HTL材料的HOMO; 干燥沉积的溶液以形成固体层前体层; 将所述HTL材料的溶液沉积到所述固体层前体层上; 并对所得产物进行热退火，得到在所述阳极和所述HTL之间的界面处具有TMO的所需器件。

公开(公告)号：US20120187548A1

公开(公告)日：2012-07-26

申请号：US13386996

申请日：2010-07-29

申请人： Thomas Kugler

发明人： Thomas Kugler

IPC分类号： H01L29/00 ,  B05D5/12 ,  H01L21/02

CPC分类号： H01L51/0003 ,  C08J7/042 ,  H01L51/0034 ,  H01L51/0529

摘要： A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable.

摘要翻译： 一种改性氟化聚合物表面的方法，包括以下步骤：在氟化聚合物表面的至少一部分上沉积第一层，第一层包含第一聚合物，第一聚合物是基本上全氟化的芳族聚合物; 以及在所述第一层的至少一部分上沉积第二层，所述第二层包含第二聚合物，所述第二聚合物是具有比所述第一聚合物低的氟化度的芳族聚合物，由此所述第二层提供表面 其具有比第一聚合物低的氟化度的物质，例如 非氟化物质是可沉积的。

公开(公告)号：US07679110B2

公开(公告)日：2010-03-16

申请号：US11980633

申请日：2007-10-31

申请人： Marten Armgarth ,  Miaioxiang M. Chen ,  David A. Nilsson ,  Rolf M. Berggren ,  Thomas Kugler ,  Tommi M. Remonen ,  Robert Forchheimer

发明人： Marten Armgarth ,  Miaioxiang M. Chen ,  David A. Nilsson ,  Rolf M. Berggren ,  Thomas Kugler ,  Tommi M. Remonen ,  Robert Forchheimer

IPC分类号： H01L29/00

CPC分类号： H01L51/0508 ,  B82Y10/00 ,  C09K9/02 ,  G02F1/163 ,  G02F2001/1635 ,  G02F2202/022 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/15 ,  H01L21/31604 ,  H01L27/283 ,  H01L28/56 ,  H01L51/0037 ,  H01L51/0097 ,  H01L51/052 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by way of a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having ability to electrochemically altering its redox state, such that a transistor channel of the transistor is defined thereby.

摘要翻译： 提供了生产电化学晶体管器件的方法，其中固化的电解质被布置成与至少一部分有机材料直接接触，所述有机材料具有通过其氧化还原状态的改变而电化学地改变其导电性的能力，使得源 晶体管的接触和漏极接触可以通过施加到栅电极的电压来控制。 还提供一种电化学晶体管器件，其中在凝固的电解质和具有电化学改变其氧化还原状态的能力的有机材料之间提供离子隔离材料，从而限定晶体管的晶体管沟道。

公开(公告)号：US07579620B2

公开(公告)日：2009-08-25

申请号：US11217410

申请日：2005-09-02

申请人： David Russel ,  Christopher Newsome ,  Thomas Kugler ,  Shunpu Li

发明人： David Russel ,  Christopher Newsome ,  Thomas Kugler ,  Shunpu Li

IPC分类号： H01L29/08

CPC分类号： H01L51/0545 ,  H01L51/0019 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/105

摘要： Provided is a field-effect transistor (10) which comprises a metal or carbon source electrode (14) and a layer of a functional organic semiconductor (28). A column of an injection material (48) extends through the layer of the functional organic semiconductor (28), the column being in contact with both the source electrode (14) and the layer of the functional organic semiconductor (28). This column (48) facilitates the transfer charge carriers between the source electrode (14) and semiconductor layer (28).The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.

摘要翻译： 提供一种场效应晶体管（10），其包括金属或碳源电极（14）和功能性有机半导体（28）层。 注入材料（48）的柱延伸穿过功能性有机半导体（28）的层，该柱与源电极（14）和功能性有机半导体（28）的层接触。 该列（48）便于在源电极（14）和半导体层（28）之间传输电荷载流子。 注射剂优选为3-己基噻吩，聚芳基胺，聚（3,4-亚乙基二氧噻吩） - 聚苯乙烯磺酸或聚苯胺等有机化合物。