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95 条记录 (耗时 0.028 秒)

    Method and apparatus to decouple power and cavitation for megasonic cleaning applications
    64.
    发明授权
    Method and apparatus to decouple power and cavitation for megasonic cleaning applications 有权
    用于解除超声波清洗应用的功率和空化的方法和装置

    公开(公告)号：US07165563B1

    公开(公告)日：2007-01-23

    申请号：US10326348

    申请日：2002-12-19

    申请人： John M. Boyd ,  Michael Ravkin ,  Fred C. Redecker

    发明人： John M. Boyd ,  Michael Ravkin ,  Fred C. Redecker

    IPC分类号： B08B3/00

    CPC分类号： B08B3/12 ,  H01L21/02052 ,  H01L21/67057 ,  Y10S134/902

    摘要： An apparatus and a method is provided for decoupling a cavitation in a liquid from an acoustic energy used to induce the cavitation. Broadly speaking, a pressure adjustment is used to control an acoustically induced cavitation in a liquid contained within a wafer cleaning apparatus, wherein the cavitation is defined by an amount and a size of gas bubbles. An increase in a pressure within the wafer cleaning apparatus results in a suppression of the cavitation. Conversely, a decrease in the pressure within the wafer cleaning apparatus results in an enhancement of the cavitation. Thus, independent control of the cavitation is provided without regard to the acoustic energy or a chemistry of the liquid. Controlling the cavitation allows for a safe and efficient wafer cleaning operation that can be customized to address specific requirements dictated by a particular wafer configuration.

    摘要翻译： 提供了一种用于将液体中的空化与用于引发空化的声能分离的装置和方法。 一般来说，使用压力调节来控制包含在晶片清洁装置内的液体中的声学诱导空化，其中气蚀由气泡的量和尺寸限定。 晶片清洁装置内的压力的增加导致空化的抑制。 相反，晶片清洁装置内的压力降低导致空化的增强。 因此，在不考虑声能或液体的化学性的情况下提供空化的独立控制。 控制气蚀允许安全有效的晶片清洁操作，可以根据特定的晶片配置来定制特定的要求。

    Method and apparatus for megasonic cleaning of patterned substrates
    65.
    发明授权
    Method and apparatus for megasonic cleaning of patterned substrates 有权
    用于超声波清洗图案化衬底的方法和装置

    公开(公告)号：US07040330B2

    公开(公告)日：2006-05-09

    申请号：US10371603

    申请日：2003-02-20

    申请人： John M. Boyd ,  Michael Ravkin ,  Fred C. Redeker

    发明人： John M. Boyd ,  Michael Ravkin ,  Fred C. Redeker

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

    摘要： A system for cleaning a semiconductor substrate is provided. The system includes transducers for generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate and an acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate. Each orientation of the acoustic energy may be simultaneously or alternately generated.

    摘要翻译： 提供了一种用于清洁半导体衬底的系统。 该系统包括用于产生在与半导体衬底的表面基本上垂直的方向上定向的声能的换能器和沿着与半导体衬底的表面基本平行的方向定向的声能。 声能的每个取向可以同时或交替地产生。

    APPARATUS AND METHODS FOR OPTIMIZING CLEANING OF PATTERNED SUBSTRATES
    66.
    发明申请
    APPARATUS AND METHODS FOR OPTIMIZING CLEANING OF PATTERNED SUBSTRATES 审中-公开
    优化图案清洗清洗装置及方法

    公开(公告)号：US20090101166A1

    公开(公告)日：2009-04-23

    申请号：US12250955

    申请日：2008-10-14

    申请人： John M. de Larios ,  Erik M. Freer ,  Michael Ravkin ,  Jeffery Marks

    发明人： John M. de Larios ,  Erik M. Freer ,  Michael Ravkin ,  Jeffery Marks

    IPC分类号： B08B3/00

    CPC分类号： H01L21/02057 ,  H01L21/67051

    摘要： Methods and apparatus for cleaning wafer surfaces are provided, especially for cleaning surfaces of patterned wafers. The cleaning apparatus includes a cleaning head with channels on the surface facing the patterned wafers which has a predominant pattern. Cleaning material flowing the channels exerts a shear force on the surface of a patterned wafer, which is oriented in a specific direction to the cleaning head. The shear force and the specific orientation between the patterned wafer and the cleaning head improve the removal efficiency of the surface contaminants.

    摘要翻译： 提供了用于清洁晶片表面的方法和装置，特别是用于清洁图案化晶片的表面。 清洁装置包括清洁头，其具有在面向图案化晶片的表面上的通道，其具有主要图案。 流动通道的清洁材料在图案化晶片的表面上施加剪切力，该图案化晶片的面向清洁头的特定方向。 图案化晶片和清洁头之间的剪切力和特定取向提高了表面污染物的去除效率。

    Chemically assisted mechanical cleaning of MRAM structures
    67.
    发明授权
    Chemically assisted mechanical cleaning of MRAM structures 有权
    MRAM结构的化学辅助机械清洗

    公开(公告)号：US07067016B1

    公开(公告)日：2006-06-27

    申请号：US10404403

    申请日：2003-03-31

    申请人： Katrina Mikhaylichenko ,  Michael Ravkin

    发明人： Katrina Mikhaylichenko ,  Michael Ravkin

    IPC分类号： B08B7/00

    CPC分类号： B08B1/04 ,  B08B3/08 ,  C11D7/06 ,  C11D11/0047 ,  H01L21/67046 ,  Y10S438/906

    摘要： A method for post-etch cleaning of a substrate with MRAM structures and MJT structures and materials is disclosed. The method includes inserting the substrate into a first brush box configured for double-sided mechanical cleaning of the substrate. A non-HF, copper compatible chemistry is introduced into the first brush box for cleaning the active and backside surfaces of the substrate. The substrate is then inserted into a second brush box which is also configured to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate. A burst of chemistry is introduced into the second brush box followed by a DIW rinse. The substrate is then processed through an SRD apparatus for final rinse and dry.

    摘要翻译： 公开了一种使用MRAM结构和MJT结构和材料对衬底进行后蚀刻清洁的方法。 该方法包括将基板插入被配置为用于基板的双面机械清洁的第一刷盒中。 将非HF，铜兼容化学物质引入到第一刷盒中以清洁基底的活性和背面。 然后将衬底插入第二刷盒中，第二刷盒还被配置为提供衬底的活性和背面的双面机械清洁。 将化学爆炸物引入第二刷盒中，然后进行DIW冲洗。 然后将基底通过SRD装置进行处理，以进行最终冲洗和干燥。

    Megasonic substrate processing module
    68.
    发明授权
    Megasonic substrate processing module 失效
    超声波基板处理模块

    公开(公告)号：US06866051B1

    公开(公告)日：2005-03-15

    申请号：US10259023

    申请日：2002-09-26

    申请人： Afshin Nickhou ,  Randolph E. Treur ,  Michael Ravkin

    发明人： Afshin Nickhou ,  Randolph E. Treur ,  Michael Ravkin

    IPC分类号： B08B3/12 ,  H01L21/00

    CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

    摘要： A megasonic module for substrate processing is provided. Embodiments of the present invention include a tank configured to hold processing fluids in which the substrate is submerged, and a lid configured to mate with and seal the tank. At least two megasonic transducers are positioned within the megasonic module to direct megasonic energy to each of an active surface and a backside surface of the substrate. A pair of drive wheels are configured to receive an edge of the substrate to support and rotate the substrate in a horizontal orientation between the at least two megasonic transducers. The substrate is supported against the pair of drive wheels by a substrate stabilizing arm/wheel which also allows the rotation of the substrate. A drive motor is configured to rotate the pair of drive wheels, and a fluid recirculation system provides for temperature control and use of a plurality of processing fluids.

    摘要翻译： 提供了用于基板处理的兆声模块。 本发明的实施例包括一种被配置为保持其中浸没了基底的处理流体的罐和构造成与罐相配合并密封的盖。 至少两个兆声传感器位于兆声波模块内，以将兆声波能量引导到基板的有源表面和背面。 一对驱动轮被构造成接收基板的边缘以在至少两个兆声换能器之间水平取向地支撑和旋转基板。 基板通过基板稳定臂/轮支撑在一对驱动轮上，基板稳定臂/轮也允许基板旋转。 驱动马达被配置成旋转所述一对驱动轮，并且流体再循环系统提供多个处理流体的温度控制和使用。

    System and method of defect optimization for chemical mechanical planarization of polysilicon
    69.
    发明授权
    System and method of defect optimization for chemical mechanical planarization of polysilicon 失效
    多晶硅化学机械平面化缺陷优化的系统和方法

    公开(公告)号：US06431959B1

    公开(公告)日：2002-08-13

    申请号：US09467460

    申请日：1999-12-20

    申请人： Katrina Mikhaylich ,  Michael Ravkin

    发明人： Katrina Mikhaylich ,  Michael Ravkin

    IPC分类号： B24B100

    CPC分类号： B24B37/345 ,  H01L21/02074 ,  H01L21/3212

    摘要： A system and method of reducing defects in chemical mechanical planarization of polysilicon is disclosed. The system includes first and second polishing stations each having a different hardness polishing pad and a different slurry. A cleaning station using a dilute SC1 chemistry is also included. The process includes polishing a polysilicon wafer on a first polishing station using a hard polishing pad and then polishing the polysilicon wafer on a second polishing station having a soft pad. The polysilicon wafer may then be directly placed in a scrubber using a dilute SC1 chemistry.

    摘要翻译： 公开了减少多晶硅化学机械平面化缺陷的系统和方法。 该系统包括具有不同硬度抛光垫和不同浆料的第一和第二抛光台。 还包括使用稀释的SC1化学物质的清洁站。 该方法包括使用硬抛光垫在第一抛光站上抛光多晶硅晶片，然后在具有软焊盘的第二抛光站上抛光多晶硅晶片。 然后可以使用稀释的SC1化学物质将多晶硅晶片直接放置在洗涤器中。

    Method and apparatus for cleaning of semiconductor substrates using hydrofluoric acid (HF)
    70.
    发明授权
    Method and apparatus for cleaning of semiconductor substrates using hydrofluoric acid (HF) 失效
    使用氢氟酸（HF）清洗半导体衬底的方法和设备

    公开(公告)号：US5868863A

    公开(公告)日：1999-02-09

    申请号：US791688

    申请日：1997-01-30

    申请人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

    发明人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

    IPC分类号： A46B11/06 ,  B08B1/04 ,  B08B3/08 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00

    CPC分类号： H01L21/02052 ,  A46B11/06 ,  B08B1/007 ,  B08B1/04 ,  B08B3/08 ,  H01L21/31111 ,  H01L21/67046 ,  Y10S134/902

    摘要： A cleaning method and apparatus using very dilute hydrofluoric acid (HF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

    摘要翻译： 一种使用非常稀的氢氟酸（HF）清洗硅晶片和半导体衬底的清洁方法和设备。 将HF输送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到基底上。 该递送系统将化学溶液均匀地施加到半导体衬底并减少在洗涤过程中使用的化学溶液的体积。 本发明的方法使用非常稀的HF，并允许蚀刻薄氧化物但不能完全去除以保持亲水表面状态。 因此，本发明提出了一种利用在刷洗涤器上使用PVA刷的原位蚀刻的化学机械清洁方法。 获得非常精确的蚀刻速度控制，因此使该工艺适合于硅片和半导体衬底的多次清洁应用。