公开(公告)号：US20090235000A1

公开(公告)日：2009-09-17

申请号：US12397626

申请日：2009-03-04

申请人： Tomoyuki Takada ,  Yasushi Maeda

发明人： Tomoyuki Takada ,  Yasushi Maeda

IPC分类号： G06F13/40 ,  G06F1/12

CPC分类号： H04B3/54 ,  H04B2203/545 ,  H04R5/04 ,  H04R2420/07 ,  H04S3/00

摘要： A method of controlling communication in a communication system includes a plurality of communication devices and a controller that transmits multi-channel data to the plurality of communication devices, executed in a communication device group to which power is supplied without passing through the controller, the method comprising the steps of determining a master communication device in the communication device group that sends the multi-channel data received wirelessly from the controller to other communication device included in the communication device group, according to wireless connection conditions between the controller and each communication device included in the communication device group, and sending, by the master via a wired connection, the multi-channel data received wirelessly from the controller to the other communication device included in the communication device group.

摘要翻译： 一种控制通信系统中的通信的方法包括：多个通信设备和控制器，该多个通信设备和控制器向多个通信设备发送多信道数据，在通过控制器提供电力的通信设备组中执行，该方法 包括以下步骤：根据控制器和包括的每个通信设备之间的无线连接条件，确定通信设备组中的主通信设备发送从控制器无线地接收到包括在通信设备组中的其他通信设备的无线接收的多信道数据 在通信设备组中，并且由主机经由有线连接发送从控制器无线地接收到包括在通信设备组中的其他通信设备的多信道数据。

公开(公告)号：US20080219367A1

公开(公告)日：2008-09-11

申请号：US12040551

申请日：2008-02-29

申请人： Tomoyuki Takada

发明人： Tomoyuki Takada

IPC分类号： H04K1/10

CPC分类号： H04L27/2627 ,  H04L27/2649

摘要： A transmitting device is provided that generates OFDM symbols by identifying a sampling frequency of input data that is input from an external device, determining a number of inverse Fourier transform sample points and a number of sampling points of a redundant data portion in accordance with the identified sampling frequency, and subjecting the input data to OFDM modulation using the determined number of sampling points. The transmitting device then transmits the generated OFDM symbols.

摘要翻译： 提供了一种发送装置，其通过识别从外部设备输入的输入数据的采样频率来生成OFDM符号，根据所识别的确定冗余数据部分的傅立叶逆变换采样点的数量和抽样点的数量 采样频率，并使用确定数量的采样点对输入数据进行OFDM调制。 然后，发送设备发送所生成的OFDM符号。

公开(公告)号：US07393412B2

公开(公告)日：2008-07-01

申请号：US10579036

申请日：2004-11-08

申请人： Kenji Kohiro ,  Tomoyuki Takada

发明人： Kenji Kohiro ,  Tomoyuki Takada

IPC分类号： C30B25/12

CPC分类号： H01L21/02461 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/0262

摘要： A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal substrate or on an epitaxial layer lattice-matched to the InP single crystal substrate under conditions of ratio of V/: 10-100, growth temperature: 630° C.-700° C., and growth rate: 0.6 μm/h-2 μm/h.

摘要翻译： 提供了一种制造具有较少凹陷缺陷的化合物半导体外延衬底的方法。 制造化合物半导体外延衬底的方法包括在InP单晶衬底上或与InP单晶衬底晶格匹配的外延层上外延生长InGaAs层的步骤，在V / ：10-100，生长温度：630℃-700℃，生长速度：0.6mum / h-2mum / h。

公开(公告)号：US20070215905A1

公开(公告)日：2007-09-20

申请号：US11597613

申请日：2005-05-26

申请人： Kenji Kohiro ,  Tomoyuki Takada ,  Kazumasa Ueda ,  Masahiko Hata

发明人： Kenji Kohiro ,  Tomoyuki Takada ,  Kazumasa Ueda ,  Masahiko Hata

IPC分类号： H01L21/20

CPC分类号： H01L29/7785 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/0262

摘要： A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b). Lm Ls>Lc  (2a)

摘要翻译： 提供了一种化合物半导体外延基板及其制造方法。 化合物半导体外延基板包括单晶衬底，晶格失配化合物半导体层和应力补偿层，其中晶格失配化合物半导体层和应力补偿层设置在单晶衬底的相同表面侧上，存在 在晶格失配化合物半导体层以及应力补偿层中不发生晶格弛豫，表示单晶衬底的晶格常数的Ls表示晶格失配化合物半导体层的晶格常数，Lm表示 应力补偿层的晶格常数满足公式（1a）或（1b）。 <？in-line-formula description =“In-line Formulas”end =“lead”？> Lm <？in-line-formula description =“In-line Formulas”end =“lead”？> Lm> Ls> Lc（2a）<？in-line-formula description =“In-line Formulas”end = 尾巴“？>

公开(公告)号：US06617235B2

公开(公告)日：2003-09-09

申请号：US08623534

申请日：1996-03-29

申请人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada

发明人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada

IPC分类号： H01L213205

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/93

摘要： The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. A first embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller by volume. A second embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1, 0≧y≧1,0≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that after etching within a reaction furnace using at least one compound which is selected from a compound group consisting of compounds of halogenated hydrogen, compounds of halogen and Group V elements and compounds of halogen, hydrogen and Group V elements, inert gas in which the concentration of hydrogen is 0.5% or smaller by volume is used as carrier gas.

摘要翻译： 本发明提供一种制造III-V族化合物半导体的方法，其生长p型导电性的含氮III-V族化合物半导体，而在化合物半导体生长之后不进行任何特定的后处理，以及 这防止了由于后处理而导致制造发光元件的产量的劣化。 第一实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其通过通式In x Ga y Al z N（0> = x> = 1,0> = z> = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于载气是氢浓度为0.5体积％以下的惰性气体。 第二实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其由通式In x Ga y Al z N（0> = x> = 1,0，...，y = 1,0 > = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于，使用至少一种选自由化合物 卤化氢，卤素和V族元素的化合物和卤素，氢和V族元素的化合物，其中氢的浓度为0.5体积％或更小的惰性气体用作载气。

公开(公告)号：US06472298B2

公开(公告)日：2002-10-29

申请号：US09998296

申请日：2001-12-03

申请人： Yasushi Iyechika ,  Tomoyuki Takada ,  Yoshinobu Ono

发明人： Yasushi Iyechika ,  Tomoyuki Takada ,  Yoshinobu Ono

IPC分类号： H01L2120

CPC分类号： H01L33/32 ,  H01L29/201 ,  H01L29/205 ,  H01L33/007 ,  H01S5/32341

摘要： The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa′Alb′N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0

摘要翻译： 本发明提供了一种高品质的III-V族化合物半导体，其制造方法和具有优异的发射特性的发光元件，其结合了这种III-V族化合物半导体。 III-V族化合物半导体具有这样的结构，其中由通式GaaAlbN（a + b =1,0,0≤a≤1）表示的III-V族化合物半导体形成的第五层 ，0 <= b <= 1），由通式Gaa'Alb'N（a'+ b'= 1）表示的III-V族化合物半导体形成的具有较低杂质浓度的第四层， 1，0 <= a'<= 1，0 <= b'<= 1），以及由通式In x Ga y Al z N（x + y）表示的III-V族化合物半导体形成的第一层 + z = 1,0

公开(公告)号：US5587014A

公开(公告)日：1996-12-24

申请号：US360427

申请日：1994-12-21

申请人： Yasushi Iyechika ,  Tomoyuki Takada

发明人： Yasushi Iyechika ,  Tomoyuki Takada

IPC分类号： C30B25/02 ,  G30B25/14

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406

摘要： There is provided a method for manufacturing group III-V compound semiconductors including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of group III elements having at least Ga in the molecules thereof and compounds having at least N in the molecules thereof as the raw materials, and the group III-V compound semiconductor crystals are grown in a reaction tube, and epitaxial layer of crystals are grown on a substrate made of a material different from that of the crystals to be grown, wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins, thereby to carry out gas-phase etching of the inner wall surface of a reaction tube. Epitaxial crystals having good crystallinity and surface morphology can be obtained with good reproducibility without impairing the productivity and stability of the product property.

摘要翻译： 提供了通过使用在其分子中具有至少Ga的III族元素的金属有机化合物和III族元素至少包含Ga作为第III族元素并且至少N为V族元素的方法， 在其分子中具有至少N的化合物作为原料，并且III-V族化合物半导体晶体在反应管中生长，并且晶体外延层生长在由不同于晶体的材料制成的衬底上 生长，其中在化合物半导体晶体生长开始之前引入选自包括卤素元素和第V族元素的化合物和卤化氢的至少一种气体，从而进行气相蚀刻 的反应管的内壁表面。 可以以良好的再现性获得具有良好结晶度和表面形态的外延晶体，而不损害产品性能的生产率和稳定性。