公开(公告)号：US20210173800A1

公开(公告)日：2021-06-10

申请号：US17100560

申请日：2020-11-20

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Kenneth L. Wright

IPC: G06F13/28 ,  G11C7/10 ,  G11C5/04 ,  G06F13/16

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

公开(公告)号：US11016837B2

公开(公告)日：2021-05-25

申请号：US16183470

申请日：2018-11-07

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Catherine Chen ,  Scott C. Best ,  John Eric Linstadt ,  Frederick A. Ware

IPC: G06F11/07 ,  G11C29/44 ,  G06F13/00 ,  G11C5/04 ,  G11C7/20 ,  G11C8/12 ,  G11C29/26

Abstract: During system initialization, each data buffer device and/or memory device on a memory module is configured with a unique (at least to the module) device identification number. In order to access a single device (rather than multiple buffers and/or memory devices), a target identification number is written to all of the devices using a command bus connected to all of the data buffer devices or memory devices, respectively. The devices whose respective device identification numbers do not match the target identification number are configured to ignore future command bus transactions (at least until the debug mode is turned off.) The selected device that is configured with a device identification number matching the target identification number is configured to respond to command bus transactions.

公开(公告)号：US20200349996A1

公开(公告)日：2020-11-05

申请号：US16823116

申请日：2020-03-18

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Alok Gupta ,  Ian Shaeffer ,  Steven C. Woo

IPC: G11C11/4076 ,  G06F3/06 ,  G06F5/06 ,  G06F1/08 ,  G11C7/10 ,  G11C29/02 ,  G06F13/16 ,  G06F12/06 ,  G11C11/409

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

公开(公告)号：US10789185B2

公开(公告)日：2020-09-29

申请号：US15701698

申请日：2017-09-12

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  John Eric Linstadt ,  Catherine Chen

IPC: G06F13/16 ,  G06F13/42 ,  G06F13/40

Abstract: A memory system supports single- and dual-memory-module configurations, both supporting point-to-point communication between a host (e.g., a memory controller) and the memory module or modules. Each memory module includes an address-buffer component, data-buffer components, and two sets of memory dies, each set termed a “timing rank,” that can be accessed independently. The one memory module is configured in a wide mode for the single-memory-module configuration, in which case both timing ranks work together, as a “package rank,” to communicate full-width data. Each of two memory modules are configured in a narrow mode for the dual-memory-module configuration, in which case one timing rank from each memory module communicates data in parallel to appear to the host as single package ranks. The data-buffer components support separate and configurable write and read delays for the different timing ranks on each module to provide read and write leveling within and between memory modules.

公开(公告)号：US10360972B2

公开(公告)日：2019-07-23

申请号：US15552569

申请日：2016-02-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Scott C. Best ,  Kenneth L. Wright

IPC: G11C5/02 ,  G11C11/4093 ,  G11C5/06 ,  G11C11/4076 ,  G11C11/408 ,  G11C29/00 ,  H01L25/065 ,  H01L25/10 ,  G11C11/4096 ,  H01L25/18 ,  G11C7/10 ,  G11C8/12 ,  H01L23/00

Abstract: A memory system includes dynamic random-access memory (DRAM) component that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. Each DRAM component includes multiplexers that allow either of the data interfaces to write data to or read data from a common set of memory banks, and to selectively relay write and read data to and from other components, bypassing the local banks. Delay elements can impose selected read/write delays to align read and write transactions from and to disparate DRAM components.

公开(公告)号：US10223309B2

公开(公告)日：2019-03-05

申请号：US15533630

申请日：2015-10-28

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Kenneth L. Wright

IPC: G06F13/28 ,  G06F13/16 ,  G11C7/10 ,  G11C5/04

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

公开(公告)号：US10109324B2

公开(公告)日：2018-10-23

申请号：US15881621

申请日：2018-01-26

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  John Eric Linstadt

IPC: G11C5/04 ,  G11C7/22 ,  G11C5/06 ,  G11C7/10

Abstract: A memory module uses dynamic data buffers for providing extended capacity for computing systems. The memory module comprises an external interface having a first set of data pins and a second set of data pins. The memory module includes a first set of memory chips and a second set of memory chips. The memory module includes a first registering clock driver to control the first set of memory chips and a second registering clock driver to control the second set of memory chips. The memory module further includes a first data buffer to connect the first set of memory chips to the first set of data pins and a second data buffer to connect the second set of memory chips to the second set of data pins.

公开(公告)号：US20180261261A1

公开(公告)日：2018-09-13

申请号：US15881621

申请日：2018-01-26

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  John Eric Linstadt

IPC: G11C5/04 ,  G11C7/22 ,  G11C7/10 ,  G11C5/06

CPC classification number: G11C5/04 ,  G11C5/063 ,  G11C7/10 ,  G11C7/22

Abstract: A memory module uses dynamic data buffers for providing extended capacity for computing systems. The memory module comprises an external interface having a first set of data pins and a second set of data pins. The memory module includes a first set of memory chips and a second set of memory chips. The memory module includes a first registering clock driver to control the first set of memory chips and a second registering clock driver to control the second set of memory chips. The memory module further includes a first data buffer to connect the first set of memory chips to the first set of data pins and a second data buffer to connect the second set of memory chips to the second set of data pins.

公开(公告)号：US20180081833A1

公开(公告)日：2018-03-22

申请号：US15701698

申请日：2017-09-12

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  John Eric Linstadt ,  Catherine Chen

IPC: G06F13/16 ,  G06F13/40 ,  G06F13/42

Abstract: A memory system supports single- and dual-memory-module configurations, both supporting point-to-point communication between a host (e.g., a memory controller) and the memory module or modules. Each memory module includes an address-buffer component, data-buffer components, and two sets of memory dies, each set termed a “timing rank,” that can be accessed independently. The one memory module is configured in a wide mode for the single-memory-module configuration, in which case both timing ranks work together, as a “package rank,” to communicate full-width data. Each of two memory modules are configured in a narrow mode for the dual-memory-module configuration, in which case one timing rank from each memory module communicates data in parallel to appear to the host as single package ranks. The data-buffer components support separate and configurable write and read delays for the different timing ranks on each module to provide read and write leveling within and between memory modules.

公开(公告)号：US20150243343A1

公开(公告)日：2015-08-27

申请号：US14702582

申请日：2015-05-01

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Alok Gupta ,  Ian Shaeffer ,  Steven C. Woo

IPC: G11C11/4076 ,  G11C11/409

CPC classification number: G11C11/4076 ,  G06F1/08 ,  G06F3/0629 ,  G06F3/0634 ,  G06F5/06 ,  G06F12/0646 ,  G06F13/1689 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C11/409 ,  G11C11/4096 ,  G11C2207/2254

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.