公开(公告)号：US06531750B2

公开(公告)日：2003-03-11

申请号：US09943306

申请日：2001-08-31

申请人： Lap Chan ,  Cher Liang Cha ,  Ravishankar Sundaresan

发明人： Lap Chan ,  Cher Liang Cha ,  Ravishankar Sundaresan

IPC分类号： H01L2976

CPC分类号： H01L29/6659 ,  H01L21/28044 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/4916 ,  H01L29/4941 ,  H01L29/665 ,  H01L29/66545

摘要： A method of forming shallow junction MOSFETs is achieved. A gate oxide layer is formed overlying a substrate. A first electrode layer, of polysilicon or metal, is deposited. A silicon nitride layer is deposited. The silicon nitride layer and the first electrode layer are etched through to form temporary MOSFET gates. Ions are implanted into the substrate to form lightly doped junctions. A spacer layer is deposited. The spacer layer and the gate oxide layer are anisotropically etched to form sidewall spacers. Ions are implanted into the substrate to form heavily doped junctions. The silicon nitride layer is etched away. A second electrode layer, of polysilicon or metal, is deposited overlying the substrate, the sidewall spacers, and the first polysilicon layer. The second electrode layer is polished down to the top surfaces of the sidewall spacers to complete the MOSFETs and to form permanent gates and conductive connections to the source and drain junctions. The second electrode layer is etched through to form separate conductive connections. An intermetal dielectric layer is deposited. The intermetal dielectric layer is etched through to form contact openings. A metal layer is deposited and etched through to form separate metal interconnects. A passivation layer is deposited, and the integrated circuit is completed.

摘要翻译： 实现了形成浅结MOSFET的方法。 栅极氧化层形成在衬底上。 沉积多晶硅或金属的第一电极层。 沉积氮化硅层。 氮化硅层和第一电极层被蚀刻通过以形成临时MOSFET栅极。 将离子注入到衬底中以形成轻掺杂的结。 沉积间隔层。 间隔层和栅极氧化物层被各向异性地蚀刻以形成侧壁间隔物。 将离子注入到衬底中以形成重掺杂的结。 蚀刻掉氮化硅层。 多晶硅或金属的第二电极层沉积在衬底，侧壁间隔物和第一多晶硅层上。 将第二电极层抛光到侧壁间隔物的顶表面以完成MOSFET并形成永久栅极和与源极和漏极结的导电连接。 蚀刻第二电极层以形成分开的导电连接。 沉积金属间电介质层。 金属间电介质层被蚀刻穿过以形成接触开口。 金属层被沉积​​并蚀刻通过以形成单独的金属互连。 沉积钝化层，并且集成电路完成。

公开(公告)号：US06323125B1

公开(公告)日：2001-11-27

申请号：US09282065

申请日：1999-03-29

申请人： Choi Pheng Soo ,  Wye Boon Loh ,  Lap Chan

发明人： Choi Pheng Soo ,  Wye Boon Loh ,  Lap Chan

IPC分类号： H01L214763

CPC分类号： H01L21/76825 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/76808 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

摘要： Only one photo mask defines the metal trench and via region. The mask blocks the UV light in the trench and via area forming Plasma Polymerized Methylsilane Oxide (PPMSO) in the exposed areas. Two step RIE plasma treatment using chlorine gas and oxygen gas removes the Plasma Polymerized Methylsilane (PPMS) in the trench and via regions. Conductive metal is deposited. A CMP process polishes back both excess metal along with the PPMSO, at a similar rate, to form: conducting metal lines, interconnects, and via contacts without metal dishing.

摘要翻译： 只有一个光罩定义了金属沟槽和通孔区域。 掩模在暴露的区域中阻挡沟槽中的UV光和形成等离子聚合甲基硅烷氧化物（PPMSO）的通孔区域。 使用氯气和氧气的两步RIE等离子体处理在沟槽和通孔区域中除去等离子体聚合甲基硅烷（PPMS）。 导电金属被沉积。 CMP工艺以类似的速率抛光多余金属与PPMSO，以形成：导电金属线，互连和通孔触点，而不会金属凹陷。

公开(公告)号：US06319767B1

公开(公告)日：2001-11-20

申请号：US09798639

申请日：2001-03-05

申请人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Yeow Kheng Lim

发明人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Yeow Kheng Lim

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

摘要： A method for fabricating a metal-insulator-metal capacitor wherein top metal corner shaping during patterning is eliminated is described. An insulating layer is provided overlying a semiconductor substrate. A composite metal stack is formed comprising a first metal layer overlying the insulating layer, a capacitor dielectric layer overlying the first metal layer, a second metal layer overlying the capacitor dielectric layer, and a hard mask layer overlying the second metal layer. A first photoresist mask is formed overlying the hard mask layer. The composite metal stack is patterned using the first photoresist mask as an etching mask whereby the patterned first metal layer forms a bottom electrode of the capacitor. A portion of the first photoresist mask is removed by plasma ashing to form a second photoresist mask narrower than the first photoresist mask. The hard mask layer is patterned using the second photoresist mask as an etching mask. The second metal layer is patterned using the hard mask layer as an etching mask whereby the second metal layer forms a top electrode of the capacitor to complete fabrication of a metal-insulator-metal capacitor.

摘要翻译： 描述了一种用于制造金属 - 绝缘体 - 金属电容器的方法，其中消除了图案化期间的顶部金属角成形。 绝缘层设置在半导体衬底上。 形成复合金属堆叠，其包括覆盖绝缘层的第一金属层，覆盖第一金属层的电容器电介质层，覆盖电容器电介质层的第二金属层和覆盖第二金属层的硬掩模层。 第一光致抗蚀剂掩模形成在硬掩模层上。 使用第一光致抗蚀剂掩模将复合金属堆叠图案化为蚀刻掩模，由此图案化的第一金属层形成电容器的底部电极。 通过等离子体灰化除去第一光致抗蚀剂掩模的一部分，以形成比第一光致抗蚀剂掩模窄的第二光刻胶掩模。 使用第二光致抗蚀剂掩模将硬掩模层图案化为蚀刻掩模。 使用硬掩模层作为蚀刻掩模对第二金属层进行构图，由此第二金属层形成电容器的顶部电极，以完成金属 - 绝缘体 - 金属电容器的制造。

公开(公告)号：US06297109B1

公开(公告)日：2001-10-02

申请号：US09377543

申请日：1999-08-19

申请人： Lap Chan ,  Cher Liang Cha ,  Ravishankar Sundaresan

发明人： Lap Chan ,  Cher Liang Cha ,  Ravishankar Sundaresan

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L21/28044 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/4916 ,  H01L29/4941 ,  H01L29/665 ,  H01L29/66545

摘要： A method of forming shallow junction MOSFETs is achieved. A gate oxide layer is formed overlying a substrate. A first electrode layer, of polysilicon or metal, is deposited. A silicon nitride layer is deposited. The silicon nitride layer and the first electrode layer are etched through to form temporary MOSFET gates. Ions are implanted into the substrate to form lightly doped junctions. A spacer layer is deposited. The spacer layer and the gate oxide layer are anisotropically etched to form sidewall spacers. Ions are implanted into the substrate to form heavily doped junctions. The silicon nitride layer is etched away. A second electrode layer, of polysilicon or metal, is deposited overlying the substrate, the sidewall spacers, and the first polysilicon layer. The second electrode layer is polished down to the top surfaces of the sidewall spacers to complete the MOSFETs and to form permanent gates and conductive connections to the source and drain junctions. The second electrode layer is etched through to form separate conductive connections. An intermetal dielectric layer is deposited. The intermetal dielectric layer is etched through to form contact openings. A metal layer is deposited and etched through to form separate metal interconnects. A passivation layer is deposited, and the integrated circuit is completed.

摘要翻译： 实现了形成浅结MOSFET的方法。 栅极氧化层形成在衬底上。 沉积多晶硅或金属的第一电极层。 沉积氮化硅层。 氮化硅层和第一电极层被蚀刻通过以形成临时MOSFET栅极。 将离子注入到衬底中以形成轻掺杂的结。 沉积间隔层。 间隔层和栅极氧化物层被各向异性地蚀刻以形成侧壁间隔物。 将离子注入到衬底中以形成重掺杂的结。 蚀刻掉氮化硅层。 多晶硅或金属的第二电极层沉积在衬底，侧壁间隔物和第一多晶硅层上。 将第二电极层抛光到侧壁间隔物的顶表面以完成MOSFET并形成永久栅极和与源极和漏极结的导电连接。 蚀刻第二电极层以形成分开的导电连接。 沉积金属间电介质层。 金属间电介质层被蚀刻穿过以形成接触开口。 金属层被沉积​​并蚀刻通过以形成单独的金属互连。 沉积钝化层，并且集成电路完成。

公开(公告)号：US06284610B1

公开(公告)日：2001-09-04

申请号：US09666315

申请日：2000-09-21

申请人： Randall Cher Liang Cha ,  Chee Tee Chua ,  Kin Leong Pey ,  Lap Chan

发明人： Randall Cher Liang Cha ,  Chee Tee Chua ,  Kin Leong Pey ,  Lap Chan

IPC分类号： H01L21336

CPC分类号： H01L29/66628 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/7845

摘要： A method for siliciding source/drain junctions is described wherein compressive stress of the underlying silicon is avoided by the insertion of a buffer layer between the silicide and the silicon. A gate electrode and associated source/drain extensions are provided in and on a semiconductor substrate. A buffer oxide layer is deposited overlying the semiconductor substrate and the gate electrode. A polysilicon layer is deposited overlying the buffer oxide layer. The polysilicon layer will form the source/drain junctions and silicon source. The source/drain junctions are silicided whereby the buffer oxide layer provides compressive stress relief during the siliciding.

摘要翻译： 描述了用于硅化源极/漏极结的方法，其中通过在硅化物和硅之间插入缓冲层来避免下面的硅的压缩应力。 栅极电极和相关的源极/漏极延伸部设置在半导体衬底中和半导体衬底上。 沉积在半导体衬底和栅电极上的缓冲氧化层。 堆叠在缓冲氧化物层上的多晶硅层。 多晶硅层将形成源极/漏极结和硅源。 源极/漏极结是硅化的，由此缓冲氧化物层在硅化期间提供压缩应力释放。

公开(公告)号：US06252290B1

公开(公告)日：2001-06-26

申请号：US09425903

申请日：1999-10-25

申请人： Shyue Fong Quek ,  Ting Cheong Ang ,  Lap Chan ,  Sang Yee Loong

发明人： Shyue Fong Quek ,  Ting Cheong Ang ,  Lap Chan ,  Sang Yee Loong

IPC分类号： H01L2900

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76835 ,  H01L2221/1026

摘要： A method of fabricating a dual damascene interconnect structure in a semiconductor device, comprises the following steps. A first level via photo sensitive dielectric layer is deposited and exposed over a semiconductor structure. A first level trench photo sensitive dielectric layer is deposited and exposed over the first via photo sensitive dielectric layer. The exposed first level via photo sensitive dielectric and trench photo sensitive dielectric layers are patterned and etched to form a first level dual damascene opening. The first level dual damascene opening comprises an integral first level via and metal line openings. A first level metal layer is deposited over the first level trench photo sensitive dielectric layer, filling the first level dual damascene opening. The first level metal layer is planarized to form at least one first level dual damascene interconnect having a first level horizontal metal line and a first level vertical via stack. The above steps are repeated n-1 times to form n-1 more dual damascene interconnects over the first level dual damascene interconnect where n is the number of interconnect levels desired. A passivation layer is deposited and patterned over the nth metal dual damascene interconnect layer to form openings in the passivation layer. The n number of via photo sensitive dielectric and trench photo sensitive dielectric layers are stripped and removed beneath the passivation layer openings and between the plurality of dual damascene structures wherein the portion of the via photo sensitive dielectric underneath the horizontal metal lines of the stripped trench photo sensitive dielectric layers remains.

摘要翻译： 一种在半导体器件中制造双镶嵌互连结构的方法，包括以下步骤。 通过光敏电介质层的第一级沉积并暴露在半导体结构上。 第一级沟槽光电介质层被沉积并暴露在第一通孔光敏介电层上。 通过光敏电介质和沟槽光敏电介质层曝光的第一级被图案化和蚀刻以形成第一级双镶嵌开口。 第一级双镶嵌开口包括集成的第一级通孔和金属线开口。 第一级金属层沉积在第一级沟槽光敏介电层上，填充第一级双镶嵌开口。 第一级金属层被平坦化以形成具有第一级水平金属线和第一级垂直通孔叠层的至少一个第一级双镶嵌互连。 上述步骤重复n-1次，以在第一级双镶嵌互连上形成n-1个双镶嵌互连，其中n是所需的互连级数。 在第n个金属双镶嵌互连层上沉积并图案化钝化层，以在钝化层中形成开口。 在钝化层开口之下和多个双镶嵌结构之间剥离并除去n个通孔光敏电介质层和沟槽光敏介电层，其中通过光敏电介质的部分在剥离的沟槽照片的水平金属线下方 保持敏感的电介质层。

公开(公告)号：US06180501B2

公开(公告)日：2001-01-30

申请号：US09418036

申请日：1999-10-14

申请人： Kin-Leong Pey ,  Chaw Sing Ho ,  Lap Chan

发明人： Kin-Leong Pey ,  Chaw Sing Ho ,  Lap Chan

IPC分类号： H01L213205

CPC分类号： H01L29/6659 ,  H01L21/28035 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66545

摘要： This invention relates to the fabrication of integrated circuit devices and more particularly to a method for minimizing the localized mechanical stress problems that can occur when silicided polysilicon gates are used to fabricate narrow channel CMOS devices. The invention addresses the avoidance of typical stress-induced problems in polysilicon gates, such as non-uniform silicide (including bowing, thinning edges, etc.) and voids, which are becoming increasingly worse as gate lengths continue to be reduced. The key to this invention is to spread the highly detrimental mechanical stresses, in narrow silicided gates, over a larger vertical surface area. This is accomplished by using a thin/thick double polysilicon stack for the gate, whereby, the lower thin polysilicon gate layer is not silicided and the upper thick polysilicon layer is subsequently silicided. An insulating layer is used to prevent silicidation of the lower thin polysilicon gate, during silicidation of active source-drain regions. The same insulating layer is also used to avoid another cause of mechanical stress, by protecting the surface grain boundaries of the lower thin polysilicon gate layer from being stuffed with polymer during the dry etching used for spacer formation. The tall stacked gate structure allows the silicide-induced stresses to be more safely located farther away from the active devices.

摘要翻译： 本发明涉及集成电路器件的制造，更具体地说，涉及一种使硅化多晶硅栅极用于制造窄沟道CMOS器件时可能出现的局部机械应力问题最小化的方法。 本发明解决了避免多晶硅栅极中的典型的应力引起的问题，例如不均匀的硅化物（包括弯曲，变薄边缘等）和空隙，随着栅极长度的不断减小，这些问题变得越来越严重。 本发明的关键是在狭窄的硅化物栅极中，在较大的垂直表面积上传播高度有害的机械应力。 这是通过使用用于栅极的薄/厚双重多晶硅堆叠实现的，由此，下部薄多晶硅栅极层不被硅化，并且随后硅化上部厚多晶硅层。 在有源源极 - 漏极区域的硅化期间，使用绝缘层来防止下部薄多晶硅栅极的硅化。 同样的绝缘层也用于通过在用于间隔物形成的干蚀刻期间保护下部薄多晶硅栅极层的表面晶界不被聚合物填充而避免机械应力的另一个原因。 高堆叠栅极结构允许硅化物引起的应力更安全地远离有源器件。

公开(公告)号：US6143598A

公开(公告)日：2000-11-07

申请号：US246893

申请日：1999-02-08

申请人： John Elmslie Martin ,  Lap Chan ,  John Leonard Sudijono ,  Ting Cheong Ang

发明人： John Elmslie Martin ,  Lap Chan ,  John Leonard Sudijono ,  Ting Cheong Ang

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L28/40 ,  H01L28/60 ,  H01L21/3144 ,  H01L21/31604 ,  H01L27/10852

摘要： A capacitor element of a semiconductor device used for high density semiconductor circuits is formed by the steps of forming the bottom plate of the capacitor, submitting the top of the bottom plate to plasma treatment in an oxidizing medium where nitrogen and oxygen are present, depositing a dielectric layer and submitting the top of the dielectric layer to plasma treatment in an oxidizing medium where nitrogen and oxygen are present. Various materials are used for the plasma treatment in an oxidizing medium where nitrogen and oxygen are present. While the present invention uses amorphous silicon as the dielectric material, plasma treatment in an oxidizing medium where nitrogen and oxygen are present can readily applied to a number of other dielectric materials. The objective in constructing capacitors for semiconductor circuits is to reduce the thickness of the dielectric material as much as possible and use a dielectric material for the dielectric which has a high dielectric constant, this increases the value of the capacitor electrical charge which can be carried by the capacitor. The objective of the present invention is to eliminate the leakage current between the plates of a capacitor so that the capacitor can maintain a high voltage between the top and the bottom plate.

摘要翻译： 用于高密度半导体电路的半导体器件的电容器元件是通过形成电容器的底板的步骤形成的，将底板的顶部在存在氮和氧的氧化介质中进行等离子体处理， 介电层，并将介电层的顶部在存在氮和氧的氧化介质中进行等离子体处理。 在存在氮和氧的氧化介质中使用各种材料进行等离子体处理。 虽然本发明使用非晶硅作为介电材料，但在存在氮和氧的氧化介质中的等离子体处理可以容易地应用于许多其它电介质材料。 用于半导体电路构造电容器的目的是尽可能地减小电介质材料的厚度，并且使用具有高介电常数的电介质的介电材料，这增加了电容器电荷的值 电容器。 本发明的目的是消除电容器板之间的漏电流，使得电容器能够在顶板和底板之间保持高电压。

公开(公告)号：US5808855A

公开(公告)日：1998-09-15

申请号：US730009

申请日：1996-10-11

申请人： Lap Chan ,  Yeow Meng Teo

发明人： Lap Chan ,  Yeow Meng Teo

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L27/06 ,  H01L27/108 ,  H01G4/06

CPC分类号： H01L28/40 ,  H01L21/76895 ,  H01L27/0629 ,  H01L27/108 ,  H01L28/60 ,  H01L28/82 ,  H01L28/90

摘要： A method for forming a stacked container capacitor for use within integrated circuits. Formed successively upon a semiconductor substrate is a first dielectric layer, a second dielectric layer and a patterned mask layer. Within an isotropic etch process, the first dielectric layer etches slower than the second dielectric layer. By means of an anisotropic etch process employing the patterned mask layer as a mask, an aperture is etched at least partially through the first dielectric layer. By means of an isotropic etch process employing the patterned mask layer as a mask, the second dielectric layer is etched to yield a ledge formed above the first dielectric layer and below the patterned masking layer. The patterned mask layer is then removed. Formed then into the anisotropically and isotropically etched aperture is a first polysilicon layer, a third dielectric layer and a second polysilicon layer. Finally, the filled isotropically etched aperture is planarized until there is exposed a flange of the first polysilicon layer formed into the ledge.

摘要翻译： 一种用于形成集成电路内使用的层叠容器电容器的方法。 连续形成在半导体衬底上的是第一电介质层，第二电介质层和图案化掩模层。 在各向同性蚀刻工艺中，第一介电层比第二介电层慢。 通过使用图案化掩模层作为掩模的各向异性蚀刻工艺，至少部分地蚀刻孔，穿过第一介电层。 通过使用图案化掩模层作为掩模的各向同性蚀刻工艺，蚀刻第二介电层以产生形成在第一介电层上方并在图案化掩模层下方的凸缘。 然后去除图案化的掩模层。 然后形成各向异性和各向异性蚀刻的孔径是第一多晶硅层，第三介电层和第二多晶硅层。 最后，填充的各向同性蚀刻的孔被平坦化，直到暴露出形成在凸缘中的第一多晶硅层的凸缘。

公开(公告)号：US5792708A

公开(公告)日：1998-08-11

申请号：US611585

申请日：1996-03-06

申请人： Mei Sheng Zhou ,  Lap Chan ,  Young-Tong Tsai

发明人： Mei Sheng Zhou ,  Lap Chan ,  Young-Tong Tsai

IPC分类号： H01L21/3213 ,  H01L21/08

CPC分类号： H01L21/32137

摘要： A method for forming a residue free patterned polysilicon layer upon a high step height patterned substrate layer. First, there is provided a semiconductor substrate having formed thereon a high step height patterned substrate layer. Formed upon the high step height patterned substrate layer is a polysilicon layer, and formed upon the polysilicon layer is a patterned photoresist layer. The patterned photoresist layer exposes portions of the polysilicon layer at a lower step level of the high step height patterned substrate layer. The polysilicon layer is then patterned through the patterned photoresist layer as an etch mask employing an anisotropic first etch process to yield a patterned polysilicon layer upon the surface of the high step height patterned substrate layer and polysilicon residues at the lower step level of the high step height patterned substrate layer. The anisotropic first etch process is a Reactive Ion Etch (RIE) anisotropic first etch process which simultaneously passivates the exposed sidewall edges of the patterned polysilicon layer. Finally, the polysilicon residues formed at the lower step level of the high step height patterned substrate layer are removed through an isotropic second etch process. The isotropic second etch process is a Reactive Ion Etch (RIE) isotropic second etch process which employs hydrogen bromide (HBr) and sulfur hexafluoride (SF6) as the reactant gases.

摘要翻译： 一种用于在高台阶高度图案化衬底层上形成无残留图案化多晶硅层的方法。 首先，提供在其上形成有高台阶高度图案化基板层的半导体基板。 形成在高台阶高度图案化衬底层上的是多晶硅层，并且在多晶硅层上形成图案化的光致抗蚀剂层。 图案化的光致抗蚀剂层在高阶高度图案化衬底层的较低台阶处暴露多晶硅层的部分。 然后通过图案化的光致抗蚀剂层将多晶硅层图案化为使用各向异性第一蚀刻工艺的蚀刻掩模，以在高阶高度图案化衬底层的表面上产生图案化多晶硅层，并在高级步骤的较低级别处产生多晶硅残余物 高度图案化衬底层。 各向异性第一蚀刻工艺是反应离子蚀刻（RIE）各向异性第一蚀刻工艺，其同时钝化图案化多晶硅层的暴露的侧壁边缘。 最后，通过各向同性的第二蚀刻工艺去除在高阶高度图案化衬底层的较低台阶处形成的多晶硅残余物。 各向同性第二蚀刻工艺是使用溴化氢（HBr）和六氟化硫（SF6）作为反应气体的反应离子蚀刻（RIE）各向同性第二蚀刻工艺。