公开(公告)号：US20090023078A1

公开(公告)日：2009-01-22

申请号：US11781105

申请日：2007-07-20

申请人： Alois Gutmann ,  Sajan Marokkey ,  Henning Haffner ,  Chandrasekhar Sarma ,  Haoren Zhuang ,  Matthias Lipinski

发明人： Alois Gutmann ,  Sajan Marokkey ,  Henning Haffner ,  Chandrasekhar Sarma ,  Haoren Zhuang ,  Matthias Lipinski

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/29 ,  G03F1/26

摘要： Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.

摘要翻译： 公开了平版印刷掩模及其制造方法。 例如，制造光刻掩模的方法包括在衬底上形成叠层。 该堆叠包括底部衰减相移材料层，中间不透明材料层，最后是顶部抗蚀剂层。 该方法还包括图案化叠层，然后修整抗蚀剂层以露出不透明材料层的一部分。 随后蚀刻未覆盖的不透明材料层，随后除去任何剩余的抗蚀剂层。

公开(公告)号：US20080176344A1

公开(公告)日：2008-07-24

申请号：US11625575

申请日：2007-01-22

申请人： Haoren Zhuang ,  Alois Gutmann ,  Matthias Lipinski ,  Chandrasekhar Sarma ,  Jingyu Lian

发明人： Haoren Zhuang ,  Alois Gutmann ,  Matthias Lipinski ,  Chandrasekhar Sarma ,  Jingyu Lian

IPC分类号： H01L21/66 ,  C23F1/00

CPC分类号： H01L21/32137 ,  H01L22/12

摘要： A method for manufacturing a semiconductor device is disclosed including determining a dimension or other physical characteristic of a pattern in a layer of material that is disposed on a workpiece, and etching the layer of material using information that is related to the dimension. A system is also disclosed for manufacturing a semiconductor device including a first etch system configured to etch a layer to define a pattern in the layer, and a second etch system configured to measure a physical characteristic of the pattern, determine an etch control parameter based on the physical characteristic, and etch the layer in accordance with the etch control parameter.

摘要翻译： 公开了一种用于制造半导体器件的方法，其包括确定设置在工件上的材料层中的图案的尺寸或其他物理特性，以及使用与所述尺寸相关的信息来蚀刻所述材料层。 还公开了一种用于制造半导体器件的系统，该半导体器件包括被配置为蚀刻层以限定该层中的图案的第一蚀刻系统，以及被配置为测量该图案的物理特性的第二蚀刻系统，基于 物理特性，并根据蚀刻控制参数刻蚀该层。

公开(公告)号：US20060281295A1

公开(公告)日：2006-12-14

申请号：US11151134

申请日：2005-06-13

申请人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann ,  Muhammed Shafi Pallachalil

发明人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann ,  Muhammed Shafi Pallachalil

IPC分类号： H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

公开(公告)号：US06420101B1

公开(公告)日：2002-07-16

申请号：US09598376

申请日：2000-06-21

申请人： Zhijian Lu ,  Alan Thomas ,  Alois Gutmann ,  Kuang Jung Chen ,  Margaret C. Lawson

发明人： Zhijian Lu ,  Alan Thomas ,  Alois Gutmann ,  Kuang Jung Chen ,  Margaret C. Lawson

IPC分类号： G03F720

CPC分类号： H01L21/0274 ,  G03F7/2022 ,  G03F7/2037 ,  G03F7/2039 ,  Y10S430/168

摘要： In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50% of the dose-to-clear for a non-patterned exposure.

摘要翻译： 在可用的深紫外（DUV）敏感光刻胶的曝光和显影中，已经观察到遵循现有技术的标准曝光和显影方法导致光致抗蚀剂材料的不希望的部件的高密度，残留在 半导体衬底（主体）。 曝光和显影光致抗蚀剂材料的方法导致这些斑点缺陷的发生率降低，除了通常使用的图案光曝光之外，还引入低等级的均匀泛光曝光，随后进行标准开发。 对于非图案化曝光，洪水暴露在5至50％的剂量清除范围内。

公开(公告)号：US08715909B2

公开(公告)日：2014-05-06

申请号：US11868374

申请日：2007-10-05

申请人： Alois Gutmann ,  Henning Haffner ,  Sajan Marokkey ,  Chandrasekhar Sarma ,  Roderick Koehle

发明人： Alois Gutmann ,  Henning Haffner ,  Sajan Marokkey ,  Chandrasekhar Sarma ,  Roderick Koehle

IPC分类号： G03F7/20

CPC分类号： G03F7/70466 ,  G03F1/26 ,  G03F1/70 ,  G03F7/70208 ,  G03F7/70283

摘要： Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.

摘要翻译： 公开了多光束光刻系统和使用其的制造半导体器件的方法。 例如，该方法利用玻璃上镀铬的电场边界的不重合或分布在两个掩模上的相移掩模特征，用于优化光刻工艺窗口，旁瓣抑制或使用一个掩模的图案取向依赖的工艺窗口优化 背面有偏振旋转胶片。

公开(公告)号：US08071261B2

公开(公告)日：2011-12-06

申请号：US11781105

申请日：2007-07-20

申请人： Alois Gutmann ,  Sajan Marokkey ,  Henning Haffner ,  Chandrasekhar Sarma ,  Haoren Zhuang ,  Matthias Lipinski

发明人： Alois Gutmann ,  Sajan Marokkey ,  Henning Haffner ,  Chandrasekhar Sarma ,  Haoren Zhuang ,  Matthias Lipinski

IPC分类号： G03F1/00

CPC分类号： G03F1/29 ,  G03F1/26

摘要： Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.

摘要翻译： 公开了平版印刷掩模及其制造方法。 例如，制造光刻掩模的方法包括在衬底上形成叠层。 该堆叠包括底部衰减相移材料层，中间不透明材料层，最后是顶部抗蚀剂层。 该方法还包括图案化叠层，然后修整抗蚀剂层以露出不透明材料层的一部分。 随后蚀刻未覆盖的不透明材料层，随后除去任何剩余的抗蚀剂层。

公开(公告)号：US08013364B2

公开(公告)日：2011-09-06

申请号：US12579807

申请日：2009-10-15

申请人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann ,  Muhammed Shafi Pallachalil

发明人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann ,  Muhammed Shafi Pallachalil

IPC分类号： H01L23/52

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

摘要翻译： 公开了一种在互连之间具有气隙的结构。 第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。 导电线形成在第一和第二绝缘层中。 处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。 第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。 工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是 不是第一个地区。

公开(公告)号：US20110183443A1

公开(公告)日：2011-07-28

申请号：US13021842

申请日：2011-02-07

申请人： Byung-Goo Jeon ,  Sung-Chul Park ,  Nikki Edleman ,  Alois Gutmann ,  Fang Cheng

发明人： Byung-Goo Jeon ,  Sung-Chul Park ,  Nikki Edleman ,  Alois Gutmann ,  Fang Cheng

IPC分类号： H01L21/66

CPC分类号： H01L21/76804 ,  H01L21/31116 ,  H01L22/26

摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

摘要翻译： 提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比 以扩大接触孔顶部附近的临时内径。

公开(公告)号：US07947431B2

公开(公告)日：2011-05-24

申请号：US12847641

申请日：2010-07-30

申请人： Chandrasekhar Sarma ,  Alois Gutmann ,  Henning Haffner ,  Sajan Marokkey ,  Josef Maynollo

发明人： Chandrasekhar Sarma ,  Alois Gutmann ,  Henning Haffner ,  Sajan Marokkey ,  Josef Maynollo

IPC分类号： H01L21/00 ,  G03F1/00 ,  G03B27/42

CPC分类号： G03F1/50 ,  G02B5/3083 ,  Y10T428/24479

摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.

摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。

公开(公告)号：US20100128270A1

公开(公告)日：2010-05-27

申请号：US12694105

申请日：2010-01-26

申请人： Sajan Marokkey ,  Chandrasekhar Sarma ,  Alois Gutmann

发明人： Sajan Marokkey ,  Chandrasekhar Sarma ,  Alois Gutmann

IPC分类号： G01B11/00

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7076 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.

摘要翻译： 用偏光光刻技术集成电路制造的标记和方法。 优选实施例包括由第一部件类型构成的第一多个元件，其中第一元件类型具有第一偏振，第二元件类型具有第二元件类型，其中第二元件类型具有第二偏振，其中 第一极化和第二极化是正交的，其中相邻元件是不同的组件类型。 对准标记可以用于基于强度或基于衍射的对准过程。