LED unit for display and display apparatus having the same

    公开(公告)号:US11552057B2

    公开(公告)日:2023-01-10

    申请号:US16198850

    申请日:2018-11-22

    Abstract: A light emitting device for a display includes first LED sub-unit, second LED, and third LED sub-units, an insulating layer substantially covering the first, second, and third LED sub-units, and electrode pads electrically connected to the first, second, and third LED sub-units, in which the first LED sub-unit is disposed on a partial region of the second LED sub-unit, the second LED sub-unit is disposed on a partial region of the third LED sub-unit, the insulating layer has openings for electrical connection between the electrode pads, a common electrode pad is connected to the first, second, and third LED sub-units through the openings in the insulating layer, first, second, and third electrode pads are connected to the first, second, and third LED sub-units, respectively, through at least one of the openings, and the first, second, and third LED sub-units are configured to be independently driven using the electrode pads.

    Light emitting device having a stacked structure

    公开(公告)号:US11430929B2

    公开(公告)日:2022-08-30

    申请号:US16561256

    申请日:2019-09-05

    Abstract: A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer, a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface, a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer, a first contact structure contacting the first surface of the second n-type semiconductor layer, and a second contact structure contacting the second surface of the second n-type semiconductor layer.

    LIGHT EMITTING DIODE (LED) STACK FOR A DISPLAY

    公开(公告)号:US20210335887A1

    公开(公告)日:2021-10-28

    申请号:US17366510

    申请日:2021-07-02

    Abstract: A light emitting diode (LED) pixel for a display including a first LED stack, a second LED stack disposed on a partial region of the first LED stack, a third LED stack disposed on a partial region of the second LED stack, a first ohmic electrode disposed on the first LED stack and forming ohmic contact with the first LED stack, a second transparent electrode disposed between the second LED stack and the third LED stack and in ohmic contact with an upper surface of the second LED stack, and a third transparent electrode in ohmic contact with an upper surface of the third LED stack, in which the first ohmic electrode is laterally spaced apart from the second LED stack.

    Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer

    公开(公告)号:US10290769B2

    公开(公告)日:2019-05-14

    申请号:US15872900

    申请日:2018-01-16

    Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

    Light emitting element including metal bulk

    公开(公告)号:US10270008B2

    公开(公告)日:2019-04-23

    申请号:US15558143

    申请日:2016-03-08

    Abstract: A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.

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