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公开(公告)号：US5501909A
公开(公告)日：1996-03-26
申请号：US196609
申请日：1994-02-15
CPC分类号： C23C16/56 , C23C16/27 , H03H9/02582 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A diamond substrate having a smooth surface, including a polycrystalline diamond film having a surface with a pit, and an insulating material other than diamond, which occupies the pit.
摘要翻译： 具有光滑表面的金刚石基底，包括具有凹坑的表面的多晶金刚石薄膜和占据凹坑的除金刚石之外的绝缘材料。
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公开(公告)号：US5497726A
公开(公告)日：1996-03-12
申请号：US240826
申请日：1994-05-11
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。
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公开(公告)号：US5446329A
公开(公告)日：1995-08-29
申请号：US118976
申请日：1993-09-09
CPC分类号： H03H9/02582
摘要： A surface acoustic wave element includes a hard layer containing a composition component essentially consisting of at least one of diamond and a diamond-like carbon film, a piezoelectric layer formed on the hard layer, a silicon dioxide (SiO.sub.2) layer formed on the piezoelectric layer, and electrodes combined with the piezoelectric layer to perform electro-mechanical conversion. The surface acoustic wave element has a larger electro-mechanical coupling coefficient and a higher surface acoustic wave propagation velocity than does a conventional surface acoustic wave element having no silicon dioxide layer, thereby obtaining a surface acoustic wave element that can operate in a high-frequency range. In particular, the electro-mechanical coupling coefficient is increased. The SiO.sub.2 layer is an electric insulator and rarely reacts with moisture or acids. The SiO.sub.2 layer protects the piezoelectric layer and the electrodes from effects of the external environment, thereby providing a surface acoustic wave element having good high-frequency characteristics and a high resistance to adverse environments.
摘要翻译： 表面声波元件包括含有基本上由金刚石和类金刚石碳膜中的至少一种组成的组成成分的硬质层，形成在硬质层上的压电层，形成在压电层上的二氧化硅（SiO 2）层 和与压电层结合的电极进行机电转换。 表面声波元件比没有二氧化硅层的常规表面声波元件具有更大的机电耦合系数和更高的表面声波传播速度，从而获得可以在高频下工作的表面声波元件 范围。 特别地，机电耦合系数增加。 SiO2层是电绝缘体，很少与水分或酸反应。 SiO 2层保护压电层和电极免受外部环境的影响，从而提供具有良好的高频特性和对不利环境的高抗性的表面声波元件。
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公开(公告)号：US5372992A
公开(公告)日：1994-12-13
申请号：US176683
申请日：1994-01-03
申请人： Hideo Itozaki , Kenjiro Higaki , Shuji Yazu
发明人： Hideo Itozaki , Kenjiro Higaki , Shuji Yazu
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701
摘要： A superconducting thin film of a compound oxide represented by YBa.sub.2 Cu.sub.3 O.sub.y in which "y" is a number of 6
摘要翻译： 由YBa2Cu3Oy表示的复合氧化物的超导薄膜，其中“y”为6
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公开(公告)号：US5343107A
公开(公告)日：1994-08-30
申请号：US117226
申请日：1993-09-03
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. In the surface acoustic wave element having the above structure, since the copper electrodes formed on the diamond layer consist of high-quality singlecrystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 在具有上述结构的表面声波元件中，由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。
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公开(公告)号：US5314870A
公开(公告)日：1994-05-24
申请号：US963261
申请日：1992-10-19
申请人： Takashi Matsuura , Kenjiro Higaki , Hideo Itozaki
发明人： Takashi Matsuura , Kenjiro Higaki , Hideo Itozaki
CPC分类号： H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731
摘要： A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by RF sputtering. At first, an under-layer of an oxide having a thickness of 50 to 200 .ANG. is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500.degree. C., and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600.degree. C.
摘要翻译： 通过RF溅射在半导体的单晶衬底上制备氧化物超导体薄膜的方法。 首先，在低于500℃的基板温度下，在半导体的单晶基板上沉积厚度为50〜200的氧化物的下层，其次，超导氧化物材料的上层为 在高于600℃的衬底温度下沉积在所述底层上。
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67.发明授权Process for preparing superconductor of compound oxide of Bi-Sr-Ca-Cu system 失效制备Bi-Sr-Ca-Cu体系复合氧化物超导体的方法
公开(公告)号：US5296455A
公开(公告)日：1994-03-22
申请号：US883228
申请日：1992-05-07
申请人： Keizo Harada , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu
发明人： Keizo Harada , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu
CPC分类号： C04B35/4521 , C23C14/087 , C23C16/408 , H01L39/126 , H01L39/2435 , Y10S505/731 , Y10S505/732 , Y10S505/742 , Y10S505/782
摘要： A compound oxide superconductor represented by the general formula:Bi.sub.4+d (Sr.sub.1-x, Ca.sub.x).sub.m Cu.sub.n O.sub.p+yin which,"d" is an amount of excess bismuth and satisfies a range of 0
摘要翻译： 由通式Bi4 + d（Sr1-x，Cax）mCunOp + y表示的复合氧化物超导体，其中“d”是过量铋的量，满足0
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公开(公告)号：US5252543A
公开(公告)日：1993-10-12
申请号：US648964
申请日：1991-01-31
申请人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
发明人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
CPC分类号： H01L39/143 , H01L39/2435 , Y10S428/93 , Y10S505/701 , Y10S505/704
摘要： Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.
摘要翻译： 由式：LnBa2Cu3O7-δ（Ln是镧系元素）或（La1-xαx）2CuO4（α是Ba或Sr）表示的复合氧化物超导薄膜的改进，沉积在由MgO，SrTiO 3或 ZrO2，通过物理气相沉积技术，超导薄膜的表面粗糙度Rmax（基准长度=1000μm）小于0.2μm。
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69.发明授权
公开(公告)号：US5236894A
公开(公告)日：1993-08-17
申请号：US950922
申请日：1992-09-24
申请人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
发明人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
CPC分类号： C23C14/087 , H01L39/2435 , Y10S505/731 , Y10S505/816
摘要： A process for depositing a superconducting thin film composed mainly of compound oxide such as LnBa.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) on a substrate such as MgO, SrTiO.sub.3 or silicon by sputtering technique, characterized in that a negative bias is applied to the substrate during the sputtering stage without heating the substrate.
摘要翻译： 将诸如LnBa2Cu3O7-δ（Ln是镧系元素）或（La1-xa x）2CuO4（α是Ba或Sr）的复合氧化物主要由MgO，SrTiO3或硅基底沉积的超导薄膜的方法由 溅射技术，其特征在于在溅射阶段期间对基板施加负偏压，而不加热基板。
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