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    CONTROLLER FOR PREVENTING UNCORRECTABLE ERROR IN MEMORY DEVICE, MEMORY DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF
    61.
    发明申请
    CONTROLLER FOR PREVENTING UNCORRECTABLE ERROR IN MEMORY DEVICE, MEMORY DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF 有权

    公开(公告)号：US20220100395A1

    公开(公告)日：2022-03-31

    申请号：US17226606

    申请日：2021-04-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hoyoun Kim ,  Kijun Lee ,  Myungkyu Lee

    IPC: G06F3/06

    Abstract: A memory system is provided. The memory system includes at least one memory device, and a controller configured to control the at least one memory device, wherein the controller includes: an error correction circuit configured to correct an error in data read from the at least one memory device, a codeword error counter configured to obtain a syndrome of a current codeword error based on a codeword error occurring in the error correction circuit, and to obtain a weighted codeword error count value by comparing the obtained syndrome with a previous syndrome, and an alert device configured to generate a warning signal for preventing an uncorrectable error of the at least one memory device according to the weighted codeword error count value.

    Memory controllers and memory systems including the same
    62.
    发明授权
    Memory controllers and memory systems including the same 有权

    公开(公告)号：US11088710B2

    公开(公告)日：2021-08-10

    申请号：US16809949

    申请日：2020-03-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kijun Lee ,  Chanki Kim ,  Sunghye Cho ,  Myungkyu Lee

    IPC: H03M13/15 ,  H03M13/11 ,  G06F17/16

    Abstract: A memory controller configured to control a memory module, the memory controller including processing circuitry configured to perform ECC decoding on a read codeword from the memory module using a first portion of a parity check matrix to generate a first syndrome and a second syndrome, determine a type of error in the read codeword based on the second syndrome and a decision syndrome, the decision syndrome corresponding to a sum of the first syndrome and the second syndrome, and output a decoding status flag indicating the type of error.

    Memory system to determine interference of a memory cell by adjacent memory cells, and operating method thereof
    63.
    发明授权
    Memory system to determine interference of a memory cell by adjacent memory cells, and operating method thereof 有权
    用于确定相邻存储单元的存储单元的干扰的存储器系统及其操作方法

    公开(公告)号：US09595341B2

    公开(公告)日：2017-03-14

    申请号：US14196366

    申请日：2014-03-04

    Applicant: SAMSUNG Electronics Co., Ltd.

    Inventor： Jaehong Kim ,  Kijun Lee ,  Yong June Kim ,  Heeseok Eun

    IPC: G11C16/04 ,  G11C16/34 ,  G06F12/02 ,  G11C16/26 ,  G11C11/56

    CPC classification number: G11C16/3431 ,  G06F12/0238 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3427

    Abstract: Provided are a memory system and an operating method thereof. The operating method reads an observation memory cell at least one time with different read voltages to configure a first read data symbol, reads a plurality of interference memory cells adjacent to the observation memory cell at least one time with different read voltages to configure second read data symbols, and determines a logical value of the observation memory cell based on the first read data symbol and the second read data symbols.

    Abstract translation: 提供了一种存储器系统及其操作方法。 操作方法用不同的读取电压至少一次读取观察存储器单元以配置第一读取数据符号，至少用不同的读取电压读取与观察存储器单元相邻的多个干扰存储器单元以配置第二读取数据 符号，并且基于第一读取数据符号和第二读取数据符号确定观察存储器单元的逻辑值。

    Controllers that generate output bits for storage in non-volatile memory devices by puncturing code word bits and methods for operating the same
    65.
    发明授权
    Controllers that generate output bits for storage in non-volatile memory devices by puncturing code word bits and methods for operating the same 有权
    通过对代码字位进行删截而产生用于存储在非易失性存储器件中的输出位的控制器和用于操作它们的方法

    公开(公告)号：US09239778B2

    公开(公告)日：2016-01-19

    申请号：US14054964

    申请日：2013-10-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kijun Lee ,  Junjin Kong ,  Dong-Min Shin ,  Kyeongcheol Yang ,  Seung-Chan Lim

    IPC: G06F3/00 ,  G06F13/00 ,  G06F12/00 ,  H03M13/11 ,  H03M13/13 ,  H03M13/00

    CPC classification number: G06F12/00 ,  H03M13/1111 ,  H03M13/1191 ,  H03M13/13 ,  H03M13/6362 ,  H04L1/0009

    Abstract: An operating method of a controller includes selecting bits of code word to be punctured; detecting locations of incapable bits of an input word based on locations of the bits to be punctured and a structure of a generation matrix calculation unit; refreezing the input word such that frozen bits and incapable bits of the input word overlap; generating input word bits by replacing information word bits with frozen bits based on the refreezing result; generating the code word by performing generation matrix calculation on the input word bits; generating output bits by puncturing the code word based on locations of the bits to be punctured; and transmitting the output bits to a nonvolatile memory device.

    Abstract translation: 控制器的操作方法包括选择要被穿孔的代码字的位; 基于要被删截的位的位置检测输入字的不能位的位置和生成矩阵计算单元的结构; 重新冻结输入字，使得输入字的冻结位和无效位重叠; 通过基于重新冻结结果将具有冻结位的信息字位替换来产生输入字位; 通过对输入字位执行生成矩阵计算来生成码字; 通过基于要被穿孔的比特的位置来对码字进行删截来产生输出比特; 并将输出比特发送到非易失性存储器件。

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