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公开(公告)号:US12215266B2
公开(公告)日:2025-02-04
申请号:US18354182
申请日:2023-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunki Kim , Shin Ae Jun , Eun Joo Jang , Yongwook Kim , Tae Gon Kim , Yuho Won , Taekhoon Kim , Hyo Sook Jang
IPC: C09K11/88 , C09K11/02 , C09K11/56 , C09K11/61 , C09K11/70 , C09K11/72 , H01L29/06 , H01L29/22 , H01L33/50 , B82Y20/00 , B82Y30/00 , B82Y40/00
Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.
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公开(公告)号:US11981851B2
公开(公告)日:2024-05-14
申请号:US18054687
申请日:2022-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang , Yong Seok Han , Heejae Chung
IPC: C09K11/88 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115
CPC classification number: C09K11/883 , H10K50/115 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2002/01 , C01P2002/74 , C01P2004/30 , C01P2004/64 , C01P2004/80
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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公开(公告)号:US11827828B2
公开(公告)日:2023-11-28
申请号:US18059075
申请日:2022-11-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Garam Park , Eun Joo Jang , Yongwook Kim , Jihyun Min , Hyo Sook Jang , Shin Ae Jun , Taekhoon Kim , Yuho Won
CPC classification number: C09K11/883 , C09K11/70 , B82Y20/00 , Y10S977/774 , Y10S977/95
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号:US11746290B2
公开(公告)日:2023-09-05
申请号:US15830134
申请日:2017-12-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunki Kim , Shin Ae Jun , Eun Joo Jang , Yongwook Kim , Tae Gon Kim , Yuho Won , Taekhoon Kim , Hyo Sook Jang
IPC: C09K11/61 , C09K11/72 , C09K11/70 , C09K11/56 , C09K11/62 , C09K11/88 , H01L33/50 , H01L29/06 , H01L29/22 , C09K11/02 , B82Y40/00 , B82Y20/00 , B82Y30/00
CPC classification number: C09K11/883 , C09K11/025 , C09K11/565 , C09K11/61 , C09K11/612 , C09K11/70 , C09K11/705 , C09K11/72 , C09K11/722 , C09K11/88 , H01L29/0665 , H01L29/22 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L33/502 , Y10S977/774 , Y10S977/818 , Y10S977/824 , Y10S977/825 , Y10S977/892 , Y10S977/896 , Y10S977/95
Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.
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公开(公告)号:US11566176B2
公开(公告)日:2023-01-31
申请号:US16851495
申请日:2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeong Hee Lee , Hyo Sook Jang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang , Yong Seok Han
Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.
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公开(公告)号:US11312904B2
公开(公告)日:2022-04-26
申请号:US16986384
申请日:2020-08-06
Inventor: Jihyun Min , Eun Joo Jang , Edward H. Sargent , Hyo Sook Jang , Makhsud I. Saidaminov , Sjoerd Hoogland , Ankit Jain , Andrew Johnston , Oleksandr Voznyy
Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ). Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1 0, −1
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公开(公告)号:US11312901B2
公开(公告)日:2022-04-26
申请号:US17226154
申请日:2021-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyo Sook Jang , Yuho Won , Sungwoo Hwang , Ji Yeong Kim , Eun Joo Jang
IPC: C09K11/08 , C08L57/10 , G02F1/13357 , H01L51/50 , H01L27/32 , C09D133/00 , C08F220/06 , C09D133/02 , B82Y20/00 , B82Y40/00 , G02F1/1335
Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
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公开(公告)号:US11296294B2
公开(公告)日:2022-04-05
申请号:US16910369
申请日:2020-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyo Sook Jang , Tae Hyung Kim , Eun Joo Jang , Oul Cho
IPC: H01L51/50
Abstract: A display device including a light source; and a quantum dot emission layer disposed on the light source, wherein the quantum dot emission layer includes a first emission layer disposed in a red pixel of the display device, and a second emission layer disposed in a green pixel of the display device, the light source includes a first portion configured to supply a first incident light to the first emission layer, a second portion configured to supply a second incident light to the second emission layer, and a third portion configured to supply a third light to a blue pixel of the display device, the first emission layer includes red light emitting quantum dots and the second emission layer includes green light emitting quantum dots, and each of the first portion, the second portion, and the third portion comprises a layer comprising blue light emitting quantum dots.
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公开(公告)号:US10371969B2
公开(公告)日:2019-08-06
申请号:US15671369
申请日:2017-08-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun Joo Jang , Chil Hee Chung , Tae Hyung Kim , Jihyun Min , Hyo Sook Jang , Dae Young Chung
Abstract: An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.
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公开(公告)号:US10179876B2
公开(公告)日:2019-01-15
申请号:US14613659
申请日:2015-02-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Shin Ae Jun , Yuho Won , Hyo Sook Jang , Eun Joo Jang
Abstract: A nanocrystal particle including: a semiconductor material; boron and optionally fluorine, wherein the particle has an organic ligand bound to a surface thereof, the boron is present as being doped in the particle or as a metal boride and the fluorine is present as being doped in the particle or as a metal fluoride.
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