公开(公告)号：US20230378188A1

公开(公告)日：2023-11-23

申请号：US18135432

申请日：2023-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE

IPC: H01L27/12 ,  G09G3/3233 ,  G09G3/3275 ,  H01L27/06 ,  H01L33/62

CPC classification number: H01L27/1225 ,  G09G3/3233 ,  G09G3/3275 ,  H01L27/06 ,  H01L27/0629 ,  H01L27/124 ,  H01L27/1255 ,  H01L33/62 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/045 ,  H10K59/10

Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

公开(公告)号：US20230361128A1

公开(公告)日：2023-11-09

申请号：US18224666

申请日：2023-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/088 ,  H01L29/04

CPC classification number: H01L27/1225 ,  H01L29/7869 ,  H01L29/24 ,  H01L27/0883 ,  H01L29/045 ,  H01L29/78693 ,  H01L29/78696 ,  H01L29/78669 ,  H01L29/78678 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L21/02603

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US20220013591A1

公开(公告)日：2022-01-13

申请号：US17379007

申请日：2021-07-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE ,  Hisao IKEDA

IPC: H01L27/32 ,  H01L51/00 ,  H01L23/00 ,  G06F1/16 ,  H01L51/52 ,  H01K1/00

Abstract: To provide a display device that is suitable for increasing in size, a display device in which display unevenness is suppressed, or a display device that can display an image along a curved surface. The display device includes a first display panel and a second display panel each including a pair of substrates. The first display panel and the second display panel each include a first region which can transmit visible light, a second region which can block visible light, and a third region which can perform display. The third region of the first display panel and the first region of the second display panel overlap each other. The third region of the first display panel and the second region of the second display panel do not overlap each other.

公开(公告)号：US20220013545A1

公开(公告)日：2022-01-13

申请号：US17482492

申请日：2021-09-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Yasuharu HOSAKA ,  Junichi KOEZUKA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  H01L29/49 ,  H01L49/02 ,  G02F1/1362

Abstract: Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.

公开(公告)号：US20210383750A1

公开(公告)日：2021-12-09

申请号：US17411401

申请日：2021-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/3208 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3233 ,  G09G3/20 ,  H01L27/32

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US20210167067A1

公开(公告)日：2021-06-03

申请号：US17061920

申请日：2020-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka SHIONOIRI ,  Hiroyuki MIYAKE ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/13 ,  H01L27/115 ,  H01L29/786

Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

公开(公告)号：US20210143281A1

公开(公告)日：2021-05-13

申请号：US17010151

申请日：2020-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/26 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20210026173A1

公开(公告)日：2021-01-28

申请号：US17061870

申请日：2020-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Makoto KANEYASU

IPC: G02F1/1343 ,  G09F9/30 ,  G09G3/36 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1362

Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided.
The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

公开(公告)号：US20200285334A1

公开(公告)日：2020-09-10

申请号：US16884154

申请日：2020-05-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji KUSUNOKI ,  Hiroyuki MIYAKE ,  Kazunori WATANABE

IPC: G06F3/044 ,  G06F3/041 ,  G06F1/16 ,  H01L51/00 ,  H01L27/32 ,  G06F3/045 ,  G06F3/0488 ,  G06F15/02

Abstract: To increase the detection sensitivity of a touch panel, provide a thin touch panel, provide a foldable touch panel, or provide a lightweight touch panel. A display element and a capacitor forming a touch sensor are provided between a pair of substrates. Preferably, a pair of conductive layers forming the capacitor each have an opening. The opening and the display element are provided to overlap each other. A light-blocking layer is provided between a substrate on the display surface side and the pair of conductive layers forming the capacitor.

公开(公告)号：US20200219905A1

公开(公告)日：2020-07-09

申请号：US16823744

申请日：2020-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/04 ,  H01L27/088

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.